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Nexperia USA Inc. PBSS303ND-QX

Part No.:
PBSS303ND-QX
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixPBSS303ND-QX.pdf
Description:
TRANS NPN 60V 1A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,789

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Product details

Overview

PBSS303ND-QX from Nexperia is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in SOT457 (SC-74) package, rated for 60 V VCEO, 3 A continuous collector current, and 68–90 mΩ RCEsat at IC = 2 A / IB = 200 mA. It serves as a high-efficiency power switch in high-voltage gate drive and DC-DC conversion circuits where thermal performance and PCB area reduction are critical.

For engineers reviewing the PBSS303ND-QX datasheet, PBSS303ND-QX pinout, PBSS303ND-QX application, or PBSS303ND-QX equivalent, this page delivers verified electrical specs, validated terminal mapping, thermal derating behavior, real-world switching timing (ton = 115 ns, toff = 665 ns), and direct alternatives for high-current, low-saturation switching designs.

Technical Context

This BISS transistor employs a proprietary epitaxial structure enabling ultra-low saturation resistance while maintaining robust 60 V breakdown voltage and high hFE (120–570 across 0.5–3 A IC). Its dual-collector configuration (pins 1,2,5,6) supports high-current routing with reduced thermal impedance.

Designed for pulsed and continuous conduction in high-voltage switching nodes, it delivers stable VCEsat < 280 mV at 3 A with 150 mA base drive and exhibits fT = 140 MHz - confirming suitability for fast-switching applications up to several hundred kHz without oscillation risk.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 60 V - Withstands 60 V collector-emitter voltage with base open; enables use in 48 V systems and flyback snubbers.
IC (continuous) 3 A - Supports sustained load currents up to 3 A on FR4 PCB with 6 cm² collector pad; defines steady-state power handling.
RCEsat 68–90 mΩ - Low on-resistance reduces conduction loss and self-heating; enables >95% efficiency in 2 A switching paths.
hFE 120–570 - High DC current gain at IC = 0.5–3 A ensures low base drive requirement and simplifies driver design.
toff 665 ns - Verified turn-off time under 9.2 V VCC, 2 A IC, ±0.1 A base current; sets maximum practical PWM frequency.
Rth(j-a) 113 K/W - Thermal resistance with 6 cm² FR4 copper pad; allows ~750 mW dissipation at Tamb = 25 °C before derating.
fT 140 MHz - Transition frequency confirms adequate small-signal bandwidth for gate driving and feedback loop stability.

Pinout & Package

SOT457 (SC-74) 6-lead surface-mount plastic package with exposed collector terminals for enhanced thermal and current handling. Dimensions: 3.1 × 2.5 × 1.3 mm; pin pitch: 0.95 mm.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6 Collector Four parallel collector terminals reduce bond wire inductance and spreading resistance; enable 6 A peak current routing.
3 Base Single base input for standard current-driven switching; requires 150–300 mA for full saturation at 3 A IC.
4 Emitter Common emitter reference; connects to ground or low-side return path; forms low-inductance current loop with collectors.

Key Features

Feature Design Value
Low VCEsat VCEsat = 195–260 mV @ IC = 3 A / IB = 300 mA - cuts conduction loss by >40% vs. standard bipolar transistors.
High IC capability 3 A continuous, 6 A pulsed - supports motor startup surges and DC-DC inrush without derating.
Multi-collector layout 4 collector pins (1,2,5,6) - lowers effective RDS(on)-like resistance and improves thermal spreading over PCB copper.
High hFE at high IC hFE = 120–185 @ IC = 3 A - maintains strong current amplification even near max rating, easing base driver sizing.
Fast switching ton = 115 ns, toff = 665 ns - enables clean transitions in 100–500 kHz switching converters with minimal overlap loss.

Applications

High-Voltage DC-DC Conversion High-Voltage MOSFET Gate Driving

Use Scenario: Step-up converter in industrial PLC power supplies delivering 24–48 V from 12 V input.

IC Role / Device Role / Timing Role: Main switching transistor in boost topology; handles 3 A inductor current with 60 V blocking.

Use Value: Low RCEsat minimizes duty-cycle-dependent conduction loss, improving efficiency by 2–3% over standard BJTs at 2 A load.

Use Scenario: Level-shifting gate driver for 600 V Si MOSFETs in motor inverter half-bridges.

IC Role / Device Role / Timing Role: High-side level translator and current amplifier; switches 1 A gate charge rapidly.

Use Value: 665 ns toff and 140 MHz fT ensure sub-microsecond gate discharge, reducing shoot-through risk in 20 kHz PWM.

Automotive HVAC Blower Control TFT LCD Backlight Inverter

Use Scenario: PWM-controlled 24 V blower motor driver in passenger cabin climate systems.

IC Role / Device Role / Timing Role: Low-side power switch interfacing MCU PWM output to motor winding.

Use Value: 150 °C Tj rating and 113 K/W Rth(j-a) with 6 cm² pad allow operation at 85 °C ambient without heatsink.

Use Scenario: Resonant inverter stage driving CCFL backlight in automotive infotainment displays.

IC Role / Device Role / Timing Role: High-voltage switching element in Royer oscillator; sustains 60 V reverse recovery stress.

Use Value: 60 V VCEO and low Cc = 33 pF support stable 50–100 kHz resonant operation with minimal capacitive loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-VCEsat switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS30300DZ Same SOT457 package, but VCEO = 40 V and RCEsat = 110 mΩ @ 2 A - lower voltage rating and higher saturation resistance. Not suitable for 48 V bus or >40 V flyback designs; limited to 24 V automotive loads. Select only if system VCE < 40 V and thermal margin permits higher conduction loss.
Diodes Incorporated DXT3030P TO-252 package, VCEO = 60 V, RCEsat = 75 mΩ @ 2 A, but larger footprint and 2× thermal mass - slower transient response. Acceptable for lower-frequency (<50 kHz) motor control, but unsuitable for compact DC-DC modules due to size. Prefer when board space allows and thermal design prioritizes steady-state over dynamic performance.

Compared with NSS30300DZ and DXT3030P, PBSS303ND-QX uniquely combines 60 V rating, 68 mΩ RCEsat, and 6-lead SOT457 packaging - delivering superior power density and switching speed for space-constrained, high-efficiency 48 V applications.

Availability

PBSS303ND-QX is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive HVAC blower control, and TFT LCD backlight inverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PBSS303ND-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS303ND-QX belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount form factors where thermal and electrical performance must co-optimize.

FAQ

What is the maximum continuous collector current for PBSS303ND-QX under standard PCB conditions?

The maximum continuous collector current is 1 A when mounted on a standard FR4 PCB with single-sided copper and no enhanced thermal pad. With a 6 cm² collector copper area, it supports 3 A continuous current at 25 °C ambient, per Table 5 limiting values and thermal derating curves in Figure 1.

Does PBSS303ND-QX require a heatsink in typical 2 A switching applications?

No external heatsink is required for 2 A continuous operation if the PCB includes ≥1 cm² of copper connected to pins 1,2,5,6. At that mounting condition, Rth(j-a) = 167 K/W allows ~600 mW dissipation - sufficient for VCEsat ≈ 180 mV × 2 A = 360 mW power loss at Tamb ≤ 60 °C.

How does the four-collector pin configuration improve performance?

The four collector terminals (pins 1,2,5,6) reduce total current path resistance and inductance, lower thermal gradient across the die, and improve current sharing during high di/dt events. This configuration directly enables the 6 A peak current rating and contributes to the 68–90 mΩ RCEsat spec.

Is PBSS303ND-QX pin-compatible with its PNP complement PBSS303PD?

Yes - both share identical SOT457 (SC-74) package and pinout: pins 1,2,5,6 = collector (NPN) / emitter (PNP), pin 3 = base, pin 4 = emitter (NPN) / collector (PNP). This allows mirrored layout in complementary push-pull or H-bridge designs without footprint change.

PBSS303ND-QX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
515mV @ 600mA, 6A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
345 @ 500mA, 2V
Power - Max:
360 mW
Frequency - Transition:
140MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBSS303ND-QX FAQ

1.How can I place an order for PBSS303ND-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS303ND-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS303ND-QX reliable?

The price and inventory of PBSS303ND-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303ND-QX is usually 5 days.

3.What payment methods are accepted for PBSS303ND-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303ND-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS303ND-QX?

PBSS303ND-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS303ND-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS303ND-QX?

For technical support, including PBSS303ND-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303ND-QX requirements.

6.How does Aetrix verify that PBSS303ND-QX is sourced from the original manufacturer or authorized distributors?

All PBSS303ND-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303ND-QX meets industry standards.

7.What is the process for return or replacement of PBSS303ND-QX?

All PBSS303ND-QX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303ND-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS303ND-QX part is unused and in its original packaging.

Return procedure for PBSS303ND-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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