Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS303NZ,135

Name: PBSS303NZ,135
Brand: Nexperia USA Inc.
SKU: PBSS303NZ,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PBSS303NZ,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS303NZ,135.pdf

Description:: TRANS NPN 30V 5.5A SOT-223

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,041

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PBSS303NZ,135 from Nexperia is an NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-efficiency switching in power-constrained circuits. It delivers 30 V V_CEO, 5.5 A continuous collector current, and ultra-low 35–50 mΩ R_CEsat at I_C = 4 A / I_B = 200 mA - enabling reduced conduction loss in DC-DC converters and motor drivers.

For engineers reviewing the PBSS303NZ,135 datasheet, PBSS303NZ,135 pinout, PBSS303NZ,135 application, or PBSS303NZ,135 equivalent, key selection criteria include its low saturation resistance, high h_FE stability up to 4 A, thermal performance on FR4 PCBs, and compatibility with gate-driving and power-switching topologies requiring compact, thermally robust discrete transistors.

Technical Context

This BISS transistor uses a proprietary epitaxial structure to achieve simultaneous high current gain and low saturation voltage - unlike conventional bipolar transistors where h_FE degrades sharply above 1 A. Its base-emitter turn-on voltage is 0.75–0.85 V at I_C = 2 A, and it sustains 150 °C junction temperature with R_th(j-a) as low as 63 K/W on ceramic PCB.

Switching performance is characterized by 65 ns turn-on time and 375 ns turn-off time under 12.5 V/3 A test conditions, with storage time dominating off-state delay. The device operates with fixed-current gain ratios (IC/IB = 10–100) across −55 °C to +100 °C, supporting stable bias design in automotive and industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - maximum blocking voltage in common-emitter configuration; suitable for 24 V system rails with margin.
I_C	5.5 A continuous - enables direct drive of small motors, fans, or MOSFET gates without external amplification.
R_CEsat	35–50 mΩ at I_C = 4 A / I_B = 200 mA - reduces conduction loss to <0.8 W at full load, easing thermal management.
h_FE	360 typical at I_C = 4 A - maintains high current gain under heavy load, minimizing required base drive current.
t_off	375 ns - supports PWM switching up to ~1 MHz in non-resonant topologies with controlled dead-time.
T_j max	150 °C - allows operation in under-hood automotive or enclosed industrial enclosures without derating below ambient.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads and integrated heat sink pad on collector terminals (pins 2 and 4). Designed for enhanced thermal dissipation on standard FR4 PCBs using 6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; requires 200 mA base current to saturate at 4 A collector load.
2	Collector	Main power output terminal; electrically tied to pin 4 for parallel current handling and thermal spreading.
3	Emiter	Reference node for current flow; connected to ground or low-side return path in switch configurations.
4	Collector	Second collector terminal; shares same internal node as pin 2 to double current-carrying capacity and improve thermal coupling to PCB.

Key Features

Feature	Design Value
Low V_CEsat	140–200 mV at I_C = 4 A - cuts conduction loss by >50% vs. standard bipolar transistors, reducing heatsink requirements.
High h_FE at high I_C	360 typical at I_C = 4 A - lowers base drive power and simplifies driver circuitry compared to low-gain alternatives.
Thermal resistance	63 K/W on Al₂O₃ PCB - enables 2 W power dissipation without active cooling in space-constrained modules.
Small PCB footprint	SOT223 outline (7.3 × 6.7 mm) - occupies ~40% less board area than TO-220 equivalents while delivering comparable current.

Applications

DC-to-DC Conversion

MOSFET Gate Driving

Use Scenario: Step-down converter in portable medical devices requiring high efficiency and minimal thermal rise.

IC Role / Device Role / Timing Role: Main switching transistor in synchronous buck topology, operating at 500 kHz with 4 A peak inductor current.

Use Value: 35 mΩ R_CEsat limits conduction loss to 560 mW, eliminating need for heatsink and enabling fanless enclosure design.

Use Scenario: High-side gate driver for 30 V logic-level MOSFETs in battery-powered power tools.

IC Role / Device Role / Timing Role: Low-side switch controlling gate voltage of external N-channel MOSFET via resistor-limited pull-down path.

Use Value: 375 ns t_off ensures fast gate discharge, preventing shoot-through during transitions in half-bridge configurations.

Motor Control

Power Switching

Use Scenario: Bidirectional 24 V brushed DC motor control in automated warehouse conveyors.

IC Role / Device Role / Timing Role: One quadrant of H-bridge output stage, switching 5.5 A stall current with PWM duty cycle modulation.

Use Value: Stable h_FE ≥200 at I_C = 4 A ensures consistent base current demand across temperature, simplifying current-sense feedback calibration.

Use Scenario: Solid-state relay replacement in smart home lighting controllers managing LED strip loads.

IC Role / Device Role / Timing Role: Low-side power switch interfacing microcontroller GPIO to 24 V load with opto-isolated control signal.

Use Value: 30 V V_CEO provides 2× overvoltage margin against inductive kickback from 12 V/24 V LED drivers, enhancing system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS30300PZT1G	Higher V_CEO (40 V), lower I_C (3 A), R_CEsat 45–65 mΩ at I_C = 2 A	Better suited for 36 V systems but limited to <3 A continuous; not drop-in for 5.5 A motor loads	Select when higher voltage margin is critical and load current remains ≤3 A.
Diodes Incorporated DXT30300P5-13	Same SOT223 package, 30 V/5 A rating, R_CEsat 40–60 mΩ at I_C = 3 A; h_FE drops to 220 at I_C = 4 A	Acceptable for 5 A loads but exhibits steeper h_FE roll-off above 3 A, increasing base drive complexity	Choose for cost-sensitive designs where 5 A peak suffices and thermal budget allows higher R_CEsat.

Compared with PBSS303NZ,135, NSS30300PZT1G trades current capability for voltage headroom, while DXT30300P5-13 matches voltage and package but sacrifices gain stability at high current - making PBSS303NZ,135 optimal for 4–5.5 A applications demanding both low loss and predictable base drive.

Availability

PBSS303NZ,135 is available at Aetrix Electronics and suitable for DC-to-DC conversion, motor control, and power switching applications requiring stable component supply, long-term manufacturability, and automotive-grade reliability.

Supply support for PBSS303NZ,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The PBSS303NZ belongs to Nexperia's BISS transistor product line, engineered specifically to replace conventional bipolar transistors in power-switching roles where low saturation voltage and high current gain must coexist without compromise.

FAQ

What is the maximum safe operating current for PBSS303NZ,135 on a standard FR4 PCB?

The absolute maximum continuous collector current is 5.5 A per datasheet limiting values. However, thermal derating applies: on a single-sided FR4 PCB with standard footprint, total power dissipation is limited to 0.7 W, restricting practical continuous current to ~2.5 A unless additional copper area or airflow is provided. With 6 cm² collector pad, 1.7 W dissipation supports ~4.5 A continuously.

Can PBSS303NZ,135 be used as a direct replacement for a standard NPN transistor like BC817?

No - PBSS303NZ,135 is not a drop-in replacement for BC817 due to fundamental differences: it has dual collector pins (2 and 4), higher current rating (5.5 A vs. 0.5 A), and optimized BISS structure for low V_CEsat. Pin 1 (base) and pin 3 (emitter) align, but pin 2/4 collectors require PCB layout revision and higher base drive capability (200 mA vs. ~5 mA).

How does the dual-collector configuration (pins 2 and 4) impact PCB layout and thermal design?

Pins 2 and 4 are internally connected to the same collector node and must be soldered to a shared copper pour. This doubles current-carrying capacity and spreads heat across two thermal paths. Layout requires symmetric copper area under both pins, with minimum 6 cm² recommended for full 5.5 A operation - unlike single-pin packages that concentrate heat at one location.

Is PBSS303NZ,135 qualified for automotive applications?

Yes - PBSS303NZ is AEC-Q101 qualified per Nexperia's product documentation and widely deployed in automotive body electronics, including seat motor control and HVAC blower drivers. Its 150 °C T_j rating, robust ESD tolerance (HBM >2 kV), and stable h_FE across −55 °C to +125 °C ambient meet automotive environmental requirements.

PBSS303NZ,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5.5 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 240mV @ 275mA, 5.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS303NZ,135 FAQ

1.How can I place an order for PBSS303NZ,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS303NZ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS303NZ,135 reliable?

The price and inventory of PBSS303NZ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303NZ,135 is usually 5 days.

3.What payment methods are accepted for PBSS303NZ,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303NZ,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS303NZ,135?

PBSS303NZ,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS303NZ,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS303NZ,135?

For technical support, including PBSS303NZ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303NZ,135 requirements.

6.How does Aetrix verify that PBSS303NZ,135 is sourced from the original manufacturer or authorized distributors?

All PBSS303NZ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303NZ,135 meets industry standards.

7.What is the process for return or replacement of PBSS303NZ,135?

All PBSS303NZ,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303NZ,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS303NZ,135 part is unused and in its original packaging.

Return procedure for PBSS303NZ,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…