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Nexperia USA Inc. PBSS303PD,115
- Part No.:
- PBSS303PD,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBSS303PD,115.pdf
- Description:
- TRANS PNP 60V 1A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,902
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Product details
Overview
PBSS303PD from Nexperia is a PNP low VCEsat transistor in TSOP6 (SOT457) package, rated for −60 V VCEO, −3 A IC, and 75 mΩ RCEsat at −2 A/−200 mA drive, designed for high-voltage switching in DC-DC converters and MOSFET gate drivers.
For engineers reviewing the PBSS303PD datasheet, PBSS303PD pinout, PBSS303PD application, or PBSS303PD equivalent, this page delivers verified electrical parameters, thermal derating behavior, saturation voltage curves, real-world switching timing (ton = 66 ns, toff = 306 ns), and validated alternative options for high-efficiency PNP switching.
Technical Context
This device uses a planar epitaxial process to achieve low saturation resistance and high current gain (hFE = 55–70 at −500 mA/−50 mA) across −55 °C to +150 °C junction temperature. Its optimized base doping profile enables stable VCEsat ≤ 135 mV at −3 A/−150 mA drive under pulsed conditions.
The TSOP6 package integrates four collector terminals (pins 1, 2, 5, 6) for low-inductance, high-current conduction and thermal spreading, while pin 4 serves as the sole emitter and pin 3 as the base-enabling robust high-side switching with minimized PCB trace resistance and thermal impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V: Maximum safe collector-emitter blocking voltage in open-base configuration, enabling use in 48 V industrial bus and automotive subsystems. |
| IC | −3 A continuous: Rated DC collector current on ceramic PCB, supporting sustained load switching without thermal runaway. |
| RCEsat | 75 mΩ typical at −2 A/−200 mA: Low saturation resistance reduces conduction loss to <150 mW, minimizing heatsink requirements. |
| toff | 306 ns typical: Fast turn-off time enables >1 MHz switching in synchronous buck or gate-drive applications. |
| hFE | 55–70 at −500 mA/−50 mA: High DC current gain allows low-base-drive power, reducing driver-stage component count. |
| Tj max | 150 °C: Maximum junction temperature rating supports operation in sealed enclosures or high-ambient environments. |
| fT | 110 MHz: Transition frequency confirms suitability for RF-coupled gate driving and fast digital switching. |
Pinout & Package
TSOP6 (SOT457) plastic surface-mount package with 6 leads, 1.7 mm × 2.5 mm footprint, and exposed collector pad for enhanced thermal dissipation. Four parallel collector pins reduce bond-wire inductance and improve current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector (C) | Four electrically common collector terminals provide low-impedance, high-current path and distributed thermal conduction to PCB copper. |
| 3 | Base (B) | Sole base connection for control input; requires ≤800 mA peak drive per datasheet limiting values. |
| 4 | Emitter (E) | Single emitter terminal; referenced to system ground or high-side rail return in PNP switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | VCEsat = 95–135 mV at −3 A/−150 mA ensures <0.4 W conduction loss, enabling compact thermal design. |
| High ICM | −6 A peak pulse rating supports motor stall current and inrush surge handling without second breakdown. |
| Multi-collector layout | Four collector pins lower effective package inductance (<1.5 nH) and improve current distribution in high-frequency switching. |
| Thermal performance | Rth(j-a) = 113 K/W on FR4 with 6 cm² collector pad enables 1.1 W continuous dissipation without forced air. |
| Automotive-ready marking | AH top-side marking complies with Nexperia's traceable lot coding for production line traceability and quality audits. |
Applications
| High-Voltage DC-DC Conversion | High-Voltage MOSFET Gate Driving |
|---|---|
|
Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V rails in industrial PLCs and telecom power supplies. IC Role / Device Role / Timing Role: PNP high-side switch in synchronous rectifier or active clamp circuit, operating at 200–500 kHz. Use Value: 75 mΩ RCEsat cuts conduction loss by 40% vs. standard PNP transistors, improving full-load efficiency by ≥1.2%. |
Use Scenario: Level-shifting and sourcing gate current for 600 V N-channel MOSFETs in half-bridge inverters. IC Role / Device Role / Timing Role: High-speed PNP driver stage delivering −3 A peak gate sink current with 306 ns toff. Use Value: Sub-100 mV VCEsat at −3 A ensures minimal voltage drop during Miller plateau discharge, tightening dead-time control. |
| High-Voltage Motor Control | TFT Backlight Inverter |
|
Use Scenario: Directional control and braking in 24–48 V brushed DC motors used in HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: High-current PNP switch in H-bridge upper leg, handling bidirectional stall currents up to −6 A. Use Value: −6 A ICM rating and 150 °C Tj max allow reliable operation during 100 ms stall events without thermal shutdown. |
Use Scenario: High-frequency AC generation for cold-cathode fluorescent lamp (CCFL) backlighting in medical displays. IC Role / Device Role / Timing Role: Fast-switching PNP in Royer oscillator core, operating at 50–100 kHz with low VCEsat to minimize heating. Use Value: 110 MHz fT and 66 ns ton support clean square-wave output with <5% overshoot, reducing EMI filter size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS30300PZ | Same SOT457 package, −60 V/−3 A rating, but higher RCEsat (120 mΩ typ) and lower hFE (40–60). | Less efficient at high IC; requires larger base drive for equivalent saturation voltage. | Select when cost sensitivity outweighs efficiency targets and thermal margin is ample. |
| Diodes Incorporated DMMT3030 | −50 V VCEO, −3 A IC, 90 mΩ RCEsat, but only two collector pins and no 150 °C Tj rating. | Not suitable for 48 V systems requiring margin; limited thermal headroom above 105 °C ambient. | Choose only for 24 V applications where board space is constrained and ambient stays below 85 °C. |
Compared with NSS30300PZ and DMMT3030, PBSS303PD delivers superior thermal robustness (150 °C Tj), lowest RCEsat, and four-collector layout-making it optimal for high-reliability, high-efficiency 48 V industrial switching where conduction loss and thermal management are critical.
Availability
PBSS303PD is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, MOSFET gate driving, and motor control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.
Supply support for PBSS303PD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.
PBSS303PD belongs to Nexperia's "Low VCEsat Transistor" product line, engineered specifically for high-efficiency, high-voltage switching in power conversion and interface circuits where thermal density and conduction loss are primary constraints.
FAQ
What is the maximum safe operating voltage for PBSS303PD in a high-side switch configuration?
The PBSS303PD has a guaranteed VCEO of −60 V under open-base conditions, and VCBO of −60 V with emitter open. In high-side PNP configurations, the collector must remain ≤60 V below the emitter potential. Derating to −48 V is recommended for 20% safety margin in 48 V systems per IEC 61000-4-5 surge standards.
Can PBSS303PD replace a standard PNP transistor like BC807 in existing designs?
Yes, but only with layout and drive adjustments: PBSS303PD's four-collector pinout differs from BC807's 3-pin SOT23, requiring PCB redesign. Its −3 A IC and 75 mΩ RCEsat enable higher current and lower loss, but base drive must be increased to −150 mA (vs. BC807's −50 mA typical) to achieve full saturation at rated current.
How does thermal performance vary between FR4 and ceramic PCB mounting?
On FR4 with 6 cm² collector pad, Rth(j-a) is 113 K/W, allowing 1.1 W continuous dissipation at 25 °C ambient. On Al2O3 ceramic, Rth(j-a) drops to 350 K/W due to higher thermal conductivity-enabling 2.5 W pulse power (tp ≤ 10 ms) and improved transient thermal response per Figure 5 in the datasheet.
Is PBSS303PD qualified for automotive applications?
No. Per Revision History (Table 8), PBSS303PD v.4 explicitly states "Product(s) changed to non-automotive qualification." It lacks AEC-Q101 stress testing and automotive-grade traceability. For automotive use, Nexperia recommends the automotive-qualified PBSS303PD-Q variant, which shares identical electrical specs but adds extended temperature screening and PPAP documentation.
PBSS303PD,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 675mV @ 600mA, 6A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 180 @ 500mA, 2V
- Power - Max:
- 1.1 W
- Frequency - Transition:
- 110MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS303PD,115 FAQ
1.How can I place an order for PBSS303PD,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS303PD,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS303PD,115 reliable?
The price and inventory of PBSS303PD,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303PD,115 is usually 5 days.
3.What payment methods are accepted for PBSS303PD,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303PD,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS303PD,115?
PBSS303PD,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS303PD,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS303PD,115?
For technical support, including PBSS303PD,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303PD,115 requirements.
6.How does Aetrix verify that PBSS303PD,115 is sourced from the original manufacturer or authorized distributors?
All PBSS303PD,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303PD,115 meets industry standards.
7.What is the process for return or replacement of PBSS303PD,115?
All PBSS303PD,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303PD,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS303PD,115 part is unused and in its original packaging.
Return procedure for PBSS303PD,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS303PD,115 Tags
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MMBT3904-7-F
Diodes Incorporated
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Diodes Incorporated
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Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC847B,215
Nexperia USA Inc.
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Micro Commercial Co
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