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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS303PZ,135

Name: PBSS303PZ,135
Brand: Nexperia USA Inc.
SKU: PBSS303PZ,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS303PZ,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS303PZ,135.pdf

Description:: TRANS PNP 30V 5.3A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS303PZ,135 from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-efficiency power switching at up to −30 V and −5.3 A continuous collector current. It delivers R_CEsat as low as 36 mΩ at −4 A/−200 mA drive, supports fast switching (t_on = 70 ns), and enables compact DC-DC converters and motor drivers.

For engineers reviewing the PBSS303PZ,135 datasheet, PBSS303PZ,135 pinout, PBSS303PZ,135 application, or PBSS303PZ,135 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs with extended collector pad, PNP complement pairing with PBSS303NZ, and suitability for gate driving and 5.3 A load switching under −30 V rail conditions.

Technical Context

This BISS transistor uses optimized epitaxial base and emitter structures to achieve high h_FE (250–400 at −0.5 A) while maintaining ultra-low V_CEsat (−145 mV typ. at −4 A). Its dual-collector pin configuration (pins 2 and 4) enhances thermal conduction and current handling beyond standard SOT223 transistors.

Switching behavior is characterized by t_on = 70 ns and t_off = 320 ns under −12.5 V V_CC, −3 A I_C, and ±0.15 A base drive - enabling efficient operation in PWM-controlled power stages without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum blocking voltage across collector-emitter with base open; defines safe operating range in high-side switch configurations.
I_C	−5.3 A: Continuous DC collector current rating; supports sustained 5 A+ loads in motor control and charging circuits.
R_CEsat	36 mΩ (typ.): Collector-emitter saturation resistance at −4 A/−200 mA; directly determines conduction loss (P_loss = I² × R).
h_FE	250–400 (at −0.5 A): DC current gain ensures reliable saturation with modest base drive, reducing driver-stage complexity.
t_on/t_off	70 ns / 320 ns: Verified turn-on/turn-off times under −12.5 V, −3 A, ±0.15 A conditions; enables >1 MHz PWM operation with minimal dead-time overhead.
P_tot (FR4 + 6 cm² pad)	1.7 W: Total power dissipation limit on standard FR4 PCB with enhanced collector copper area; sets thermal design baseline for heatsink-free layouts.
f_T	130 MHz: Transition frequency at −10 V V_CE, −100 mA I_C; confirms high-frequency capability for RF-coupled or fast-switching applications.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with four leads and integrated heat sink via pins 2 and 4 (both connected to collector). Package dimensions: 6.7 mm × 3.7 mm × 1.8 mm (L × W × H), with 2.3 mm lead pitch and exposed collector paddle for thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; requires −265 mA base current to saturate at full −5.3 A collector current.
2	Collector	Main high-current output node; electrically tied to pin 4 for doubled current path and improved thermal conduction.
3	Emiter	Reference terminal for PNP topology; connects to system ground or positive rail depending on high-/low-side configuration.
4	Collector	Secondary collector terminal; parallel connection with pin 2 reduces effective R_th(j-sp) to 15 K/W and improves power handling.

Key Features

Feature	Design Value
Low V_CEsat	−145 mV typical at −4 A/−200 mA: Reduces conduction losses by >40% vs. conventional PNP transistors, lowering thermal stress in space-constrained designs.
Dual-collector thermal path	Pins 2 & 4 both connected to collector: Enables 1.7 W dissipation on FR4 with 6 cm² copper pad - 2.4× higher than standard SOT223 limits.
High h_FE at high I_C	130–200 at −4 A: Maintains strong current gain under heavy load, allowing simplified base drive circuitry without Darlington stages.
Fast switching	t_on = 70 ns, t_off = 320 ns: Supports high-frequency PWM (≥500 kHz) with minimal overlap loss in synchronous rectifiers and motor inverters.
BISS architecture	Breakthrough In Small Signal process: Combines low saturation voltage with robust ruggedness (T_j = 150 °C max) and ESD tolerance per HBM Class 1C.

Applications

DC-to-DC Conversion

MOSFET Gate Driving

Use Scenario: Step-down (buck) converter output stage in portable power supplies.

IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer to output inductor; operates at 300–1000 kHz PWM.

Use Value: Low R_CEsat (36 mΩ) cuts conduction loss by 65% vs. legacy PNP devices, enabling >92% efficiency at 3 A output without heatsink.

Use Scenario: Level-shifting and current-boosted gate drive for N-channel MOSFETs in half-bridge motor controllers.

IC Role / Device Role / Timing Role: Active pull-up switch sourcing up to −5.3 A peak to rapidly charge gate capacitance during high-side turn-on.

Use Value: Fast t_on (70 ns) and high h_FE (200 at −4 A) ensure <100 ns gate rise time, minimizing shoot-through risk in 20–100 kHz motor drives.

Motor Control

Charging Circuits

Use Scenario: Bidirectional brushed DC motor H-bridge upper-arm switch in battery-powered tools.

IC Role / Device Role / Timing Role: PNP high-side switch delivering −5.3 A continuous current; paired with NPN low-side counterpart.

Use Value: Dual-collector thermal design sustains 1.7 W dissipation on FR4, supporting 100% duty cycle at 4 A without derating - critical for stall-torque operation.

Use Scenario: Constant-current linear charger for Li-ion packs in medical wearables.

IC Role / Device Role / Timing Role: Series pass element regulating charge current up to −5.3 A with precision feedback loop.

Use Value: Tight V_CEsat distribution (−145 to −210 mV) ensures ±2% current accuracy across temperature, eliminating need for external sense resistor calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	Lower I_C (−200 mA), higher V_CEsat (−400 mV typ.), SOT23 package	Only suitable for signal-level switching (<500 mA); cannot replace PBSS303PZ,135 in power applications	Select only for low-current bias or logic inversion where thermal performance is non-critical.
BC807-40,115	Same SOT223 package but lower I_C (−500 mA), higher R_CEsat (220 mΩ), no dual-collector thermal enhancement	Limited to <1 W dissipation; unsuitable for sustained >1 A loads or high-frequency PWM	Use only in cost-sensitive, low-power linear regulators or LED drivers where efficiency is secondary.

Compared with MMBT3906LT1G and BC807-40,115, PBSS303PZ,135 uniquely combines 5.3 A current capability, 36 mΩ R_CEsat, and dual-collector thermal design - making it the only viable SOT223 PNP for high-efficiency, high-current switching above 2 A without external heatsinking.

Availability

PBSS303PZ,135 is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and charging circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PBSS303PZ,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS303PZ,135 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in space-constrained power systems - emphasizing low V_CEsat, thermal robustness, and fast switching without compromising ruggedness.

FAQ

What is the maximum continuous collector current for PBSS303PZ,135?

The PBSS303PZ,135 is rated for −5.3 A continuous collector current (I_C) under standard FR4 PCB conditions with ambient temperature ≤25 °C. At elevated temperatures or reduced copper area, derating applies per the power derating curve - e.g., 1.0 W max at 75 °C ambient on standard footprint.

Can PBSS303PZ,135 be used as a direct replacement for PBSS303NZ in a circuit?

No - PBSS303PZ,135 is a PNP transistor while PBSS303NZ is its NPN complement. They are not interchangeable due to opposite polarity, biasing requirements, and circuit topology dependencies. Using one in place of the other will prevent proper switching or cause immediate device failure.

What is the significance of pins 2 and 4 both being labeled "collector"?

Pins 2 and 4 are internally shorted to the same collector node and serve as parallel current paths and thermal conduction routes. This dual-terminal design lowers effective thermal resistance (R_th(j-sp) = 15 K/W) and increases safe operating area - enabling higher power dissipation without altering PCB layout.

Does PBSS303PZ,135 require a heatsink in typical applications?

A dedicated heatsink is not required when mounted on an FR4 PCB with ≥6 cm² copper area connected to pins 2 and 4. Under those conditions, it dissipates up to 1.7 W at 25 °C ambient. For >1.7 W or elevated ambient temperatures, thermal simulation and optional copper pour extension are recommended instead of mechanical heatsinks.

PBSS303PZ,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5.3 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 265mV @ 265mA, 5.3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 1A, 2V

Power - Max:: 2 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS303PZ,135 FAQ

1.How can I place an order for PBSS303PZ,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS303PZ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS303PZ,135 reliable?

The price and inventory of PBSS303PZ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303PZ,135 is usually 5 days.

3.What payment methods are accepted for PBSS303PZ,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303PZ,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS303PZ,135?

PBSS303PZ,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS303PZ,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS303PZ,135?

For technical support, including PBSS303PZ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303PZ,135 requirements.

6.How does Aetrix verify that PBSS303PZ,135 is sourced from the original manufacturer or authorized distributors?

All PBSS303PZ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303PZ,135 meets industry standards.

7.What is the process for return or replacement of PBSS303PZ,135?

All PBSS303PZ,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303PZ,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS303PZ,135 part is unused and in its original packaging.

Return procedure for PBSS303PZ,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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