Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS303PZ-QF

Part No.:
PBSS303PZ-QF
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixPBSS303PZ-QF.pdf
Description:
TRANS PNP 30V 5.3A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,851

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS303PZ-QF from Nexperia is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-efficiency switching in power path control. It delivers −30 V VCEO, −5.3 A continuous collector current, 36–53 mΩ RCEsat at −4 A/−200 mA drive, and supports motor control, DC-DC conversion, and MOSFET gate driving with minimal heat generation.

For engineers reviewing the PBSS303PZ-QF datasheet, PBSS303PZ-QF pinout, PBSS303PZ-QF application, or PBSS303PZ-QF equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, PNP polarity compatibility with complementary NPN PBSS303NZ, and suitability for high-current switching where <100 mV VCEsat is required at ≥2 A.

Technical Context

This BISS transistor uses an optimized PNP epitaxial structure to achieve ultra-low saturation voltage while maintaining high hFE (130–400) across −0.5 A to −4 A collector currents. Its dual-collector pin configuration (pins 2 and 4) enables enhanced thermal dissipation via extended copper pour on PCB.

The device operates with base-emitter turn-on voltage of −0.76 V to −0.85 V at −2 A, and exhibits fast switching with 70 ns turn-on time and 320 ns turn-off time under −12.5 V VCC, −3 A IC, and ±0.15 A base drive conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−30 V: Maximum safe collector-emitter blocking voltage in open-base configuration.
IC−5.3 A: Continuous DC collector current rating at Tamb ≤25 °C with standard FR4 footprint.
RCEsat36–53 mΩ: Confirmed saturation resistance at −4 A IC/−200 mA IB, enabling <0.2 W conduction loss.
hFE130–400: DC current gain range at VCE = −2 V, supporting stable biasing from 0.5 A to 4 A loads.
VCEsat−145 to −265 mV: Measured saturation voltage at −5.3 A IC/−265 mA IB, critical for minimizing power loss in high-current switches.
fT130 MHz: Transition frequency at −10 V VCE/−100 mA IC, confirming suitability for medium-speed switching up to ~10 MHz.
Ptot1.7 W: Max power dissipation with 6 cm² collector pad on FR4, directly enabling compact heatsinkless designs.

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads and integrated heat sink capability; pins 2 and 4 are internally connected collectors for improved thermal transfer to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input requiring −265 mA for full saturation at −5.3 A load; compatible with standard logic-level drivers.
2CollectorMain high-current output terminal; electrically tied to pin 4 for parallel current handling and thermal spreading.
3EmiterPower return path; connects to system ground or low-side rail in high-side switch configurations.
4CollectorSecondary collector terminal bonded to same die region as pin 2; used to increase solder joint area and reduce thermal resistance to PCB.

Key Features

FeatureDesign Value
Ultra-low VCEsatAs low as −145 mV at −4 A ensures <0.6 W conduction loss, reducing thermal stress in space-constrained layouts.
Dual-collector thermal designPins 2 and 4 share collector node, lowering Rth(j-sp) to 15 K/W and enabling 1.7 W dissipation on standard FR4.
High hFE at high current130–200 hFE maintained at −4 A, allowing efficient base drive with minimal current sourcing overhead.
Fast switching70 ns ton and 320 ns toff support PWM frequencies up to 1–2 MHz in DC-DC and motor control applications.
Robust SOARated for −10.6 A peak pulse (tp ≤1 ms), supporting surge-tolerant operation in motor startup and inrush scenarios.

Applications

DC-to-DC ConversionMOSFET Gate Driving

Use Scenario: Synchronous buck converter high-side switch in 12 V input, 3.3 V/5 A output industrial PSU.

IC Role / Device Role / Timing Role: PNP BISS transistor configured as active-low level shifter and current amplifier to drive N-channel MOSFET gate with fast edge rates.

Use Value: −145 mV VCEsat at −4 A minimizes gate drive loss; dual-collector layout sustains 1.7 W dissipation without heatsink.

Use Scenario: Isolated gate driver stage for 40 V, 20 A power MOSFET in BLDC motor inverter half-bridge.

IC Role / Device Role / Timing Role: High-current PNP switch translating microcontroller PWM signal into robust −5 A gate pull-down path.

Use Value: 320 ns toff ensures clean dead-time control; −265 mV VCEsat at −5.3 A prevents gate voltage droop during hard-switching.

Motor ControlCharging Circuits

Use Scenario: Bidirectional H-bridge current path switch for 24 V, 3 A brushed DC motor in automated valve actuator.

IC Role / Device Role / Timing Role: Low-side PNP switch enabling reverse current flow with minimal forward drop and thermal rise.

Use Value: 130–200 hFE at −4 A allows direct MCU GPIO drive; RCEsat ≤53 mΩ limits I²R loss to <0.9 W at full load.

Use Scenario: Constant-current battery charging switch in USB-C PD 20 W adapter managing 5 V/3 A charging path.

IC Role / Device Role / Timing Role: Precision current-regulating switch controlling charge current via feedback-controlled base bias.

Use Value: Tight VCEsat tolerance (±30 mV) enables accurate current sensing; −5 V VEBO rating supports safe reverse-bias protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT3906-7-FLower IC (−200 mA), higher VCEsat (−400 mV), SOT23 packageNot suitable for >500 mA loads; lacks dual-collector thermal designSelect only for low-power signal switching where board space is critical and current <100 mA.
BC807-40,215−500 mA IC, −700 mV typical VCEsat, SOT23 package, lower hFE spreadInsufficient for >1 A continuous conduction; no thermal enhancement for power dissipationChoose only for general-purpose amplification or low-current switching where cost is primary constraint.

Compared with MMBT3906-7-F and BC807-40,215, PBSS303PZ-QF provides 10× higher current capability, 3× lower saturation voltage, and integrated thermal management-making it the sole viable option for >2 A PNP switching in compact industrial power modules.

Availability

PBSS303PZ-QF is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and charging circuits requiring stable component supply, automotive-grade reliability, and consistent parametric performance across production batches.

Supply support for PBSS303PZ-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, formed in 2017 from the former NXP Standard Products division, specializing in high-volume, high-reliability components for automotive, industrial, and computing markets.

PBSS303PZ-QF belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in space-constrained power management systems where low conduction loss and thermal robustness are mandatory.

FAQ

What is the maximum continuous collector current for PBSS303PZ-QF at 70 °C ambient temperature?

The datasheet specifies −5.3 A IC at Tamb ≤25 °C with standard FR4 footprint. At 70 °C, derating applies: using the 179 K/W Rth(j-a) curve, maximum IC drops to approximately −3.8 A to maintain Tj ≤150 °C, assuming VCEsat ≈ −200 mV and no additional heatsinking.

Can PBSS303PZ-QF be used as a direct replacement for PBSS303PZ without modification?

Yes - PBSS303PZ-QF is a qualified variant of PBSS303PZ with identical electrical specifications, pinout, package dimensions, and thermal characteristics. The '-QF' suffix denotes Nexperia's automotive-grade qualification (AEC-Q101), adding enhanced reliability testing but no functional or mechanical changes.

Does PBSS303PZ-QF require external base resistors when driven by a 3.3 V microcontroller GPIO?

Yes - with VBEsat ≈ −0.93 V at −4 A, a 3.3 V GPIO must sink ≥200 mA to saturate the transistor. A series base resistor of ~10 Ω is required to limit peak current and ensure stable operation; layout must minimize trace inductance to preserve 70 ns ton.

How does the dual-collector configuration (pins 2 and 4) affect PCB layout requirements?

Pins 2 and 4 are internally shorted collectors and must be connected to the same large copper pour. Minimum recommended pad area is 6 cm² per pin (12 cm² total) on outer layer with thermal vias to inner ground planes; this achieves the 1.7 W Ptot rating and reduces Rth(j-a) from 179 K/W to 74 K/W as specified.

PBSS303PZ-QF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
5.3 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
370mV @ 40mA, 4A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 1A, 2V
Power - Max:
700 mW
Frequency - Transition:
130MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

PBSS303PZ-QF FAQ

1.How can I place an order for PBSS303PZ-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS303PZ-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS303PZ-QF reliable?

The price and inventory of PBSS303PZ-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS303PZ-QF is usually 5 days.

3.What payment methods are accepted for PBSS303PZ-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS303PZ-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS303PZ-QF?

PBSS303PZ-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS303PZ-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS303PZ-QF?

For technical support, including PBSS303PZ-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS303PZ-QF requirements.

6.How does Aetrix verify that PBSS303PZ-QF is sourced from the original manufacturer or authorized distributors?

All PBSS303PZ-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS303PZ-QF meets industry standards.

7.What is the process for return or replacement of PBSS303PZ-QF?

All PBSS303PZ-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS303PZ-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS303PZ-QF part is unused and in its original packaging.

Return procedure for PBSS303PZ-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS303PZ-QF Tags

  • PBSS303PZ-QF
  • PBSS303PZ-QF PDF
  • PBSS303PZ-QF Datasheet
  • PBSS303PZ-QF Specifications
  • PBSS303PZ-QF Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS303PZ-QF
  • Buy PBSS303PZ-QF
  • PBSS303PZ-QF Price
  • PBSS303PZ-QF Distributor
  • PBSS303PZ-QF Supplier
  • PBSS303PZ-QF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER