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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS304PZ-QF

Name: PBSS304PZ-QF
Brand: Nexperia USA Inc.
SKU: PBSS304PZ-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS304PZ-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS304PZ-QF.pdf

Description:: TRANS PNP 60V 4.5A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS304PZ-QF from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-voltage switching roles in power path control. It delivers −60 V V_CEO, −4.5 A continuous I_C, and 53 mΩ typical R_CEsat at −4 A/−200 mA drive - enabling efficient gate driving of high-side MOSFETs in DC-DC converters.

For engineers reviewing the PBSS304PZ-QF datasheet, PBSS304PZ-QF pinout, PBSS304PZ-QF application, or PBSS304PZ-QF equivalent, this device is selected for high-voltage motor control, automotive power switches, and compact high-efficiency power stage designs where low saturation loss and thermal robustness on FR4 PCBs are critical.

Technical Context

This PNP BISS transistor uses an optimized epitaxial structure to achieve ultra-low V_CEsat while sustaining 60 V blocking capability and 4.5 A DC collector current. Its high h_FE (270 typ. at −1 A) enables direct drive from low-current logic sources without external amplification.

Thermal performance is defined across three mounting conditions: standard FR4 (R_th(j-a) = 179 K/W), enhanced FR4 with 6 cm² collector pad (74 K/W), and ceramic Al₂O₃ (63 K/W), supporting design flexibility in thermally constrained industrial and automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - supports operation in 48 V and higher DC bus systems with margin against transients.
I_C	−4.5 A - sufficient for driving medium-power MOSFET gates or switching small motors/fans directly.
R_CEsat	53 mΩ typ. at −4 A/−200 mA - reduces conduction loss to ≤0.85 W at full load, easing thermal management.
h_FE	270 typ. at −1 A - allows logic-level base drive (e.g., 3.3 V MCU GPIO) with minimal current sourcing requirement.
t_off	320 ns - enables switching frequencies up to ~300 kHz in hard-switched applications without excessive delay.
P_tot	1.7 W on FR4 with 6 cm² collector pad - defines maximum dissipation before derating, usable in compact board layouts.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads and integrated heatsink pad; pin 2 and pin 4 are internally connected to the collector tab for enhanced thermal and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; accepts −200 mA base current for full saturation at −4 A collector load.
2	Collector	Main high-side current path; electrically tied to pin 4 and thermal pad for low-inductance, low-resistance connection.
3	Emiter	Reference terminal for PNP operation; connects to positive rail in high-side switch configurations.
4	Collector	Redundant collector terminal; must be soldered to PCB copper pour to realize specified thermal resistance (74 K/W).

Key Features

Feature	Design Value
Low V_CEsat	−265 mV max at −4.5 A/−225 mA - cuts conduction loss by >50% vs. standard PNP transistors in same package.
High h_FE at high I_C	170 min at −4 A - maintains gain under heavy load, ensuring reliable saturation without overdriving base.
Peak I_CM	−9 A single-pulse - handles inrush currents in motor startup or capacitor charging without failure.
Thermal resistance (R_th(j-sp))	15 K/W junction-to-solder-point - enables rapid heat transfer to PCB, critical for sustained high-current operation.

Applications

High-Voltage DC-DC Conversion

High-Voltage MOSFET Gate Driving

Use Scenario: Step-up converter in telecom power supply operating from 48 V input to 300 V output.

IC Role / Device Role / Timing Role: High-side PNP switch controlling flyback transformer primary current during energy transfer phase.

Use Value: Low R_CEsat minimizes duty-cycle-dependent conduction loss, improving efficiency by 1.2% at 2 A load versus conventional PNP.

Use Scenario: Driving N-channel MOSFET gate in half-bridge motor driver for 60 V BLDC system.

IC Role / Device Role / Timing Role: Level-shifting high-side gate driver with fast turn-off (320 ns t_off) to prevent shoot-through.

Use Value: 270 h_FE at −1 A allows direct drive from 3.3 V microcontroller, eliminating need for dedicated gate driver IC.

Automotive HVAC Blower Control

Industrial Fan Power Switching

Use Scenario: PWM-controlled blower motor in vehicle cabin climate system with 36 V nominal battery.

IC Role / Device Role / Timing Role: High-side switch regulating motor voltage via duty-cycle modulation at 20 kHz.

Use Value: 150 °C T_j rating and −60 V V_CEO ensure reliability during load-dump transients (ISO 7637-2 Pulse 5a).

Use Scenario: On/off control of 48 V industrial cooling fan in enclosed control cabinet.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay, switching 3.8 A steady-state current.

Use Value: 1.7 W P_tot on FR4 with extended copper pad eliminates need for heatsink, reducing BOM cost and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PMST3906	−40 V V_CEO, −200 mA I_C, 350 mΩ R_CEsat - lower voltage/current rating, TO-236 package.	Only suitable for low-power signal switching (<100 mA), not high-voltage gate drive or motor control.	Select only for space-constrained logic-level inversion where <100 mA load and <40 V operation apply.
BC807-40	−45 V V_CEO, −500 mA I_C, 300 mΩ R_CEsat - SOT23 package, no thermal pad, limited to <0.5 A continuous.	Applicable in low-current bias networks or LED drivers, but cannot sustain 4.5 A or dissipate >0.5 W.	Choose when PCB area is critical and load current remains below 500 mA with <45 V bus requirements.

Compared with PMST3906 and BC807-40, PBSS304PZ-QF uniquely combines 60 V blocking, 4.5 A current, and sub-100 mΩ saturation resistance in a thermally enhanced SOT223 - making it the only viable discrete PNP for high-efficiency, high-voltage switching above 2 A.

Availability

PBSS304PZ-QF is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive power switches, and industrial fan control requiring stable component supply across multi-year production cycles.

Supply support for PBSS304PZ-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, formed in 2017 from the former NXP Standard Products division, specializing in high-performance, high-reliability components for automotive and industrial markets.

PBSS304PZ-QF belongs to Nexperia's BISS transistor product line, engineered specifically to replace conventional PNPs in high-efficiency power switching applications where low V_CEsat and robust thermal performance are mandatory.

FAQ

What is the maximum safe operating temperature for PBSS304PZ-QF?

The absolute maximum junction temperature is 150 °C, and the storage temperature range is −65 °C to +150 °C. For continuous operation, ambient temperature must be limited based on thermal resistance: on FR4 with 6 cm² collector pad, maximum ambient is 100 °C at 1.7 W dissipation per derating curve. Exceeding 150 °C risks permanent parametric shift or bond wire failure.

Can PBSS304PZ-QF be used in parallel for higher current handling?

No - PBSS304PZ-QF exhibits negative temperature coefficient for V_CEsat, causing current hogging if paralleled without individual emitter resistors. The datasheet does not specify matching tolerance or recommend paralleling. For >4.5 A, use a single higher-rated device such as PBSS306PZ (−60 V, −6 A).

Is the SOT223 thermal pad electrically isolated?

No - pins 2 and 4 are internally connected to the collector, and the exposed thermal pad is metallurgically bonded to the collector die attach. It must be soldered to a PCB copper pour tied to the collector net; floating or grounding the pad will cause short-circuit failure.

What is the recommended base resistor value for switching a 4 A load with 3.3 V MCU GPIO?

With h_FE ≥120 at −4 A and required I_B = −200 mA for full saturation, a 3.3 V GPIO must source ≥200 mA - exceeding typical MCU pin limits. Use a buffer (e.g., ULN2003) or reduce load to ≤1 A; for 1 A, I_B = −10 mA → R_B ≈ 270 Ω (3.3 V − 0.85 V)/10 mA.

PBSS304PZ-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4.5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 375mV @ 225mA, 4.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 700 mW

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS304PZ-QF FAQ

1.How can I place an order for PBSS304PZ-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS304PZ-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS304PZ-QF reliable?

The price and inventory of PBSS304PZ-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS304PZ-QF is usually 5 days.

3.What payment methods are accepted for PBSS304PZ-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS304PZ-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS304PZ-QF?

PBSS304PZ-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS304PZ-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS304PZ-QF?

For technical support, including PBSS304PZ-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS304PZ-QF requirements.

6.How does Aetrix verify that PBSS304PZ-QF is sourced from the original manufacturer or authorized distributors?

All PBSS304PZ-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS304PZ-QF meets industry standards.

7.What is the process for return or replacement of PBSS304PZ-QF?

All PBSS304PZ-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS304PZ-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS304PZ-QF part is unused and in its original packaging.

Return procedure for PBSS304PZ-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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