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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS305ND,115

Name: PBSS305ND,115
Brand: Nexperia USA Inc.
SKU: PBSS305ND,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS305ND,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-74, SOT-457

Datasheet:: PBSS305ND,115.pdf

Description:: TRANS NPN 100V 1A 6-TSOP

Quantity:: RFQ Add To RFQ list

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Inventory:1,744

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Product details

Overview

PBSS305ND,115 from NXP Semiconductors is a 100 V, 3 A NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT457 (SC-74) package, designed for high-voltage switching roles in power path control circuits. It delivers 73 mΩ typical R_CEsat at I_C = 2 A / I_B = 200 mA, supports 4 A peak collector current, and operates up to 150 °C junction temperature - enabling compact, high-efficiency DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS305ND,115 datasheet, PBSS305ND,115 pinout, PBSS305ND,115 application, or PBSS305ND,115 equivalent, this page provides verified pin functions, thermal resistance values (R_th(j-a) = 113 K/W on FR4 with 6 cm² collector pad), switching timing (t_on = 355 ns), h_FE behavior across load range, and validated alternatives for high-voltage discrete switching designs.

Technical Context

This BISS transistor uses an optimized epitaxial structure to achieve low saturation voltage without sacrificing gain or speed. Its four-collector-terminal configuration (pins 1, 2, 5, 6) enables low-inductance, high-current PCB routing and thermal spreading across the die attach area.

It operates with V_CEO = 100 V and V_CB0 = 100 V, supporting high-side switching in 48 V–80 V systems. Base-emitter turn-on voltage is 0.83 V at I_C = 2 A, and transition frequency f_T reaches 140 MHz, confirming suitability for fast-switching applications up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Enables use in 48 V industrial bus and automotive 60 V transient-tolerant designs
I_C	3 A continuous - Supports sustained motor drive or backlight inverter loads without forced cooling
R_CEsat	73 mΩ typ. at I_C = 2 A - Reduces conduction loss to <300 mW, easing thermal management
h_FE	95 min. at I_C = 2 A - Ensures reliable saturation with modest base drive (I_B = 200 mA)
t_on	355 ns - Allows PWM operation up to ~500 kHz with minimal dead-time overhead
R_th(j-a)	113 K/W on FR4 with 6 cm² collector pad - Enables 750 mW power dissipation at T_amb = 70 °C

Pinout & Package

SOT457 (SC-74) 6-pin surface-mount plastic package with exposed collector terminals for enhanced thermal and current handling. Pin 1, 2, 5, and 6 are internally connected to the collector; pin 3 is base; pin 4 is emitter.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector	Four parallel collector terminals reduce bond wire inductance and improve current sharing; enable large copper pour attachment for thermal relief
3	Base	Single low-impedance control input; requires ≥200 mA drive for full saturation at 2 A output
4	Emitter	Reference node for switching loop; must be routed with minimal inductance to avoid voltage overshoot during turn-off

Key Features

Feature	Design Value
Low V_CEsat	145 mV typ. at I_C = 2 A - Cuts conduction loss by >50% vs. standard bipolar transistors
High h_FE at high current	95 min. at I_C = 2 A - Permits direct microcontroller GPIO drive without external buffer stage
Multi-collector layout	4 collector pins - Lowers effective package inductance and improves thermal spreading over PCB copper
High-speed switching	t_off = 589 ns - Supports high-frequency PWM in DC-DC and inverter topologies

Applications

High-Voltage DC-DC Conversion

High-Voltage MOSFET Gate Driving

Use Scenario: Step-up converter in telecom power supply operating from 48 V input to 100 V output.

IC Role / Device Role / Timing Role: Main switch in boost topology, conducting up to 3 A with 500 kHz PWM.

Use Value: 73 mΩ R_CEsat limits conduction loss to 657 mW at 3 A, reducing heatsink requirement.

Use Scenario: Active pull-down stage for 100 V SiC MOSFET gate in industrial motor drive.

IC Role / Device Role / Timing Role: Fast-turn-off clamp transistor sinking 300 mA gate current during switching transitions.

Use Value: t_off = 589 ns ensures clean gate discharge, minimizing shoot-through risk.

Thin Film Transistor (TFT) Backlight Inverter

Automotive High-Voltage Power Switch

Use Scenario: Resonant half-bridge driver for CCFL backlight in automotive infotainment display.

IC Role / Device Role / Timing Role: High-side switch toggling at 60–100 kHz with 100 V blocking capability.

Use Value: V_CEO = 100 V withstands flyback spikes; h_FE stability up to 100 °C maintains gain in sealed display enclosures.

Use Scenario: Load switch controlling 60 V HVAC blower motor in 12 V/48 V dual-battery architecture.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay, cycling at ≤10 Hz.

Use Value: 150 °C max junction temperature supports under-hood placement; I_CM = 4 A handles motor stall current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-saturation bipolar switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN2012ZTA	V_CEO = 100 V, I_C = 3 A, R_CEsat = 90 mΩ typ., SOT89 package	Single-collector, higher thermal resistance (R_th(j-a) = 180 K/W), no multi-pin collector layout	Preferred where board space permits larger footprint and lower switching frequency (<200 kHz) suffices
MMBT5551	V_CEO = 160 V, I_C = 600 mA, R_CEsat = 500 mΩ typ., SOT23 package	Lower current rating, higher saturation voltage, unsuitable for >1 A continuous loads	Only viable for signal-level or low-power auxiliary switching; not a functional replacement for PBSS305ND,115

Compared with ZXTN2012ZTA, PBSS305ND,115 offers 23% lower R_CEsat and superior thermal performance via its quad-collector SOT457 layout; versus MMBT5551, it delivers 5× higher current capacity and 85% lower conduction loss - making it the only viable choice for 2–3 A high-voltage switching.

Availability

PBSS305ND,115 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, TFT backlight inverters, and automotive power switching requiring stable component supply across extended production cycles.

Supply support for PBSS305ND,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PBSS305ND,115 belongs to NXP's BISS transistor product line, engineered specifically for high-efficiency, high-voltage discrete switching where low saturation voltage and robust thermal performance are critical - targeting power conversion and motor control in space-constrained environments.

FAQ

What is the maximum safe operating voltage for PBSS305ND,115 in continuous mode?

The absolute maximum collector-emitter voltage (V_CEO) is 100 V with open base, per IEC 60134 limiting values. Operation above 80 V is recommended only with adequate derating for temperature and transients; sustained 100 V operation requires verification of layout-induced voltage spikes and thermal margin at full load.

Can PBSS305ND,115 replace a MOSFET in high-side switching applications?

No - PBSS305ND,115 is a bipolar junction transistor requiring continuous base current to maintain saturation, unlike MOSFETs that are voltage-controlled. It is best used where moderate switching speed and low conduction loss outweigh gate-drive complexity, such as in cost-sensitive DC-DC stages or gate-clamp circuits.

How does the quad-collector pinout affect PCB layout?

Pins 1, 2, 5, and 6 are internally tied to the collector, allowing direct connection to a single large copper pour. This reduces current density, lowers thermal resistance by up to 40% vs. single-pin packages, and minimizes parasitic inductance - critical for maintaining low V_CE overshoot during fast turn-off.

Is PBSS305ND,115 suitable for automotive under-hood applications?

Yes - it is qualified for operation from −65 °C to +150 °C junction temperature and supports automotive-grade thermal cycling. Its 100 V V_CEO, 4 A I_CM, and robust h_FE stability across temperature make it appropriate for HVAC actuators, fuel pump drivers, and other 48 V subsystems, provided layout meets AEC-Q101-recommended practices.

PBSS305ND,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 360mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 170 @ 500mA, 2V

Power - Max:: 1.1 W

Frequency - Transition:: 140MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PBSS305ND,115 FAQ

1.How can I place an order for PBSS305ND,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS305ND,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS305ND,115 reliable?

The price and inventory of PBSS305ND,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS305ND,115 is usually 5 days.

3.What payment methods are accepted for PBSS305ND,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS305ND,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS305ND,115?

PBSS305ND,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS305ND,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS305ND,115?

For technical support, including PBSS305ND,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS305ND,115 requirements.

6.How does Aetrix verify that PBSS305ND,115 is sourced from the original manufacturer or authorized distributors?

All PBSS305ND,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS305ND,115 meets industry standards.

7.What is the process for return or replacement of PBSS305ND,115?

All PBSS305ND,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS305ND,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS305ND,115 part is unused and in its original packaging.

Return procedure for PBSS305ND,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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