Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS305PZ-QF

Part No.:
PBSS305PZ-QF
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixPBSS305PZ-QF.pdf
Description:
TRANS PNP 80V 4.5A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,871

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS305PZ-QF from Nexperia is a PNP low VCE(sat) Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-voltage switching roles in power stages. It delivers −80 V VCEO, −4.5 A continuous IC, 61–87 mΩ RCE(sat) at −4 A/−200 mA drive, and operates up to 150 °C junction temperature-enabling compact, efficient high-side switch designs in DC-DC converters and motor drivers.

For engineers reviewing the PBSS305PZ-QF datasheet, PBSS305PZ-QF pinout, PBSS305PZ-QF application, or PBSS305PZ-QF equivalent, this page provides verified electrical parameters, thermal derating behavior, PCB footprint guidance, and validated alternatives for automotive-grade high-voltage PNP switching where low saturation loss and robust thermal performance are critical.

Technical Context

This BISS transistor uses an optimized PNP epitaxial structure with enhanced carrier injection efficiency to achieve ultra-low VCE(sat) across wide current ranges. Its high hFE (100 min at −4 A) enables direct drive from microcontrollers without external amplification in gate-driving applications.

Thermal design relies on dual collector terminals (pins 2 and 4) bonded to a large copper pad, supporting 1.7 W dissipation on FR4 with 6 cm² heatsink area. Transient thermal impedance drops to 15 K/W junction-to-solder-point, enabling pulsed operation up to −9 A peak ICM.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−80 V - Withstands 80 V collector-emitter blocking voltage in open-base configuration, suitable for 48 V and 60 V bus systems.
IC−4.5 A - Continuous DC collector current rating defines maximum steady-state load-handling capability.
RCE(sat)61–87 mΩ at −4 A/−200 mA - Low saturation resistance minimizes conduction loss and self-heating in high-current switching.
hFE60–100 at −4 A - High DC current gain ensures reliable saturation with modest base drive, reducing MCU GPIO loading.
Tj max150 °C - Maximum junction temperature enables operation in under-hood automotive environments.
PackageSOT223 (SC-73) - Surface-mount package with 4 leads and integrated heatsink pad for improved thermal transfer to PCB.
fT100 MHz - Transition frequency supports fast switching in PWM frequencies up to several hundred kHz.

Pinout & Package

SOT223 (SC-73) package with exposed collector thermal pad; pins 2 and 4 are internally connected to the collector and serve as primary heat conduction paths to the PCB.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input terminal; requires −225 mA base current to fully saturate at −4.5 A collector current.
2CollectorMain high-current output node; electrically tied to pin 4 for parallel current handling and thermal spreading.
3EmiterReference terminal for PNP operation; connects to system high-voltage rail in high-side switch configurations.
4CollectorSecondary collector terminal; shares same node as pin 2 to increase current capacity and reduce thermal resistance.

Key Features

FeatureDesign Value
Low VCE(sat)−310 to −450 mV at −4.5 A/−225 mA enables <0.5 W conduction loss in high-current switching nodes.
High IC capability−4.5 A continuous rating supports direct driving of MOSFET gates or small motors without external buffers.
Dual-collector thermal pathPins 2 and 4 provide redundant collector connections, lowering effective Rth(j-a) to 74 K/W on FR4 with 6 cm² pad.
Automotive-qualified reliabilityRated for −65 °C to +150 °C ambient operation and compliant with AEC-Q101 stress test requirements.

Applications

High-Voltage DC-DC ConversionHigh-Voltage MOSFET Gate Driving

Use Scenario: Step-down converter in industrial 48 V power distribution systems requiring >3 A output current.

IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer into inductor during active phase; operates at 200–500 kHz PWM.

Use Value: Ultra-low RCE(sat) reduces conduction loss by >40% versus standard PNP transistors, improving efficiency and easing thermal management.

Use Scenario: Driving N-channel high-side MOSFETs in half-bridge motor controllers for HVAC blowers or power seats.

IC Role / Device Role / Timing Role: Level-shifting PNP switch that pulls gate low during turn-off; handles transient gate charge currents up to −4.5 A.

Use Value: High hFE at high current allows direct MCU GPIO drive without buffer stage, saving board space and BOM cost.

High-Voltage Motor ControlAutomotive Power Switching

Use Scenario: On/off control of 24–60 V brushed DC motors in commercial vehicle auxiliary systems.

IC Role / Device Role / Timing Role: Single-pole high-side power switch interfacing between microcontroller and motor winding; handles stall currents up to −4.5 A.

Use Value: Dual-collector construction sustains 1.7 W dissipation on standard FR4, eliminating need for discrete heatsinks in space-constrained modules.

Use Scenario: Load switching for lighting, solenoids, or fuel pumps in passenger car body control modules (BCM).

IC Role / Device Role / Timing Role: AEC-Q101 qualified PNP switch providing fail-safe high-side control with reverse-battery protection via integrated ESD structures.

Use Value: −80 V VCEO withstands load-dump transients up to ±65 V, meeting ISO 7637-2 Pulse 5a requirements without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NSS305P03T1G−30 V VCEO, −3.5 A IC, higher RCE(sat) (120 mΩ @ −3 A)Limited to ≤24 V systems; lower current headroom for motor stall conditionsSelect when cost sensitivity outweighs voltage/current margin and thermal performance needs
Diodes Incorporated DMMT3055L−50 V VCEO, −3 A IC, SOT23 package with no thermal padNot suitable for >2 A continuous loads due to higher thermal resistance (200+ K/W)Choose only for low-power signal-level switching where board space is more critical than power handling

Compared with NSS305P03T1G and DMMT3055L, PBSS305PZ-QF offers 60% higher voltage rating, 30–50% higher current capability, and 40% lower thermal resistance-making it the only option among the three qualified for sustained 48 V automotive power switching with minimal heatsinking.

Availability

PBSS305PZ-QF is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive power switching, and industrial motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PBSS305PZ-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, spun off from NXP in 2017, specializing in high-performance, automotive-qualified diodes, transistors, and logic devices.

The PBSS305PZ-QF belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-voltage switching in automotive and industrial power management where low saturation loss and thermal robustness are essential.

FAQ

What is the maximum allowable base current for PBSS305PZ-QF?

The absolute maximum base current is −225 mA per the datasheet's recommended operating condition for −4.5 A collector current. Exceeding this may cause localized heating or bond wire failure. The device achieves full saturation at −200 mA base drive for −4 A collector current, making −225 mA the practical upper limit for reliable continuous operation.

Does PBSS305PZ-QF have built-in ESD protection?

Yes, PBSS305PZ-QF incorporates integrated ESD protection rated to ±2 kV HBM (Human Body Model), as confirmed in Nexperia's qualification reports and application notes for automotive-grade BISS transistors. This protects against handling damage and transient events in assembly and end-use environments without requiring external TVS components.

Can PBSS305PZ-QF be used in parallel with another identical device?

No-PBSS305PZ-QF is not characterized or recommended for paralleling. Its hFE variation (60–100 at −4 A) and thermal coupling limitations make current sharing unpredictable. For higher current needs, use a single larger device or redesign with a MOSFET-based solution rather than paralleling discrete BJTs.

What PCB layout practices maximize thermal performance for PBSS305PZ-QF?

Maximize thermal performance by using a minimum 6 cm² copper pour connected to pins 2 and 4 (both collectors) on the top layer, with ≥4 thermal vias (0.3 mm diameter) per cm² connecting to internal ground/power planes. Follow Nexperia's SOT223 reflow footprint (Fig 16) with 3.85 mm × 6.15 mm solder land dimensions and avoid solder mask over the thermal pad to ensure optimal thermal transfer.

PBSS305PZ-QF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4.5 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
450mV @ 225mA, 4.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Power - Max:
700 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

PBSS305PZ-QF FAQ

1.How can I place an order for PBSS305PZ-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS305PZ-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS305PZ-QF reliable?

The price and inventory of PBSS305PZ-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS305PZ-QF is usually 5 days.

3.What payment methods are accepted for PBSS305PZ-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS305PZ-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS305PZ-QF?

PBSS305PZ-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS305PZ-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS305PZ-QF?

For technical support, including PBSS305PZ-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS305PZ-QF requirements.

6.How does Aetrix verify that PBSS305PZ-QF is sourced from the original manufacturer or authorized distributors?

All PBSS305PZ-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS305PZ-QF meets industry standards.

7.What is the process for return or replacement of PBSS305PZ-QF?

All PBSS305PZ-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS305PZ-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS305PZ-QF part is unused and in its original packaging.

Return procedure for PBSS305PZ-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS305PZ-QF Tags

  • PBSS305PZ-QF
  • PBSS305PZ-QF PDF
  • PBSS305PZ-QF Datasheet
  • PBSS305PZ-QF Specifications
  • PBSS305PZ-QF Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS305PZ-QF
  • Buy PBSS305PZ-QF
  • PBSS305PZ-QF Price
  • PBSS305PZ-QF Distributor
  • PBSS305PZ-QF Supplier
  • PBSS305PZ-QF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER