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Nexperia USA Inc. PBSS306NX,115

Part No.:
PBSS306NX,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixPBSS306NX,115.pdf
Description:
TRANS NPN 100V 4.5A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:484

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Product details

Overview

PBSS306NX,115 from Nexperia is an NPN low VCE(sat) transistor in SOT89 package, rated for 100 V VCEO, 4.5 A continuous collector current, and 56 mΩ typical RCE(sat) at 4 A/200 mA drive. It serves as a high-voltage switching element in DC-DC converters, MOSFET gate drivers, and motor control circuits where low conduction loss and thermal efficiency are critical.

For engineers reviewing the PBSS306NX,115 datasheet, PBSS306NX,115 pinout, PBSS306NX,115 application, or PBSS306NX,115 equivalent, this device is selected for high-voltage power switching roles requiring <170 mV VCE(sat) at 4.5 A, robust 9 A peak pulse capability, and SOT89-mountable thermal performance on FR4 PCBs.

Technical Context

This NPN transistor operates with open-base VCEO = 100 V and supports pulsed IC up to 9 A (tp ≤ 1 ms). Its low saturation resistance (40–56 mΩ) enables high-efficiency switching in high-side or low-side configurations without external heat sinking under moderate PCB copper area.

It delivers hFE = 40–70 at 5 A and exhibits fast switching: ton = 330 ns, toff = 530 ns, with fT = 110 MHz. Thermal resistance Rth(j-a) ranges from 60 K/W (ceramic PCB) to 208 K/W (standard FR4), confirming its suitability for thermally constrained high-voltage industrial modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 100 V - Maximum safe collector-emitter voltage with base open; enables use in 48 V and 60 V bus systems with margin.
IC 4.5 A continuous - Sustained current handling at Tamb = 25 °C on standard FR4; defines steady-state load capacity.
RCE(sat) 40–56 mΩ - Low on-resistance reduces I²R losses and self-heating during conduction; improves system efficiency by >3% vs. conventional transistors.
VCE(sat) 170–245 mV at 4.5 A/225 mA - Ultra-low saturation voltage ensures minimal voltage drop across switch, critical for high-side gate driving.
fT 110 MHz - Transition frequency supports stable operation up to ~10 MHz switching frequencies in SMPS designs.
toff 530 ns - Fast turn-off time minimizes cross-conduction risk in half-bridge topologies and enables higher PWM resolution.
Rth(j-a) 60–208 K/W - Thermal resistance varies with PCB layout; 60 K/W achievable on ceramic Al2O3, enabling 2.1 W dissipation at Tj = 150 °C.

Pinout & Package

SOT89 (SC-62/TO-243) plastic surface-mounted package: 3-lead, 1.5 mm pitch, 4.5 × 2.5 × 1.5 mm body; collector tab provides primary thermal path to PCB copper.

Pin/Terminal Circuit Role Design Meaning
1 Emitter Current return path; connected to ground or low-side reference; electrically isolated from heatsink in SOT89 mounting.
2 Collector Main power output terminal; soldered to large copper pour for thermal management; carries full load current.
3 Base Control input; requires 200–400 mA drive for full saturation at 4–4.5 A; sensitive to ESD per JEDEC JESD22-A114.

Key Features

Feature Design Value
Low VCE(sat) 170–245 mV at 4.5 A ensures <0.8 W conduction loss, reducing thermal stress in compact power stages.
High IC/ICM 4.5 A continuous / 9 A pulsed rating supports surge-tolerant motor startup and transient load handling.
High hFE at high IC hFE = 40–70 at 5 A enables efficient base drive with minimal driver IC overhead.
Small PCB footprint SOT89 package occupies ~11.25 mm² - 40% smaller than TO-220 equivalents, saving space in dense power modules.
Thermal optimization Collector pad design allows direct thermal coupling to 6 cm² copper area, lowering Rth(j-a) to 76 K/W on FR4.

Applications

High-Voltage DC-DC Conversion High-Voltage MOSFET Gate Driving

Use Scenario: Step-down converter operating from 60 V input to 12 V output in industrial power supplies.

IC Role / Device Role / Timing Role: Primary high-side switch controlling energy transfer into output inductor; driven by PWM controller with 500 kHz switching frequency.

Use Value: 40 mΩ RCE(sat) limits conduction loss to 0.72 W at 4.5 A, enabling >94% efficiency without forced air cooling.

Use Scenario: Driving the gate of a 100 V N-channel MOSFET in a half-bridge motor driver stage.

IC Role / Device Role / Timing Role: Low-side level-shifting switch that pulls MOSFET gate to ground during turn-off; must sink 2 A peak gate charge current.

Use Value: 530 ns toff and 170 mV VCE(sat) minimize dead-time uncertainty and reduce shoot-through risk.

High-Voltage Motor Control High-Voltage Power Switches

Use Scenario: Commutation switch in 48 V BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: Phase-leg low-side transistor switching at 20 kHz; handles 4 A RMS current with 9 A startup surges.

Use Value: 9 A ICM and 150 °C Tj(max) ensure reliable operation during locked-rotor conditions without derating.

Use Scenario: Solid-state relay replacement for 24–60 V fan control in telecom rectifiers.

IC Role / Device Role / Timing Role: Direct-load switching transistor replacing mechanical relays; controlled via microcontroller GPIO with base resistor network.

Use Value: 100 V VCEO and 4.5 A IC support direct connection to 48 V bus with no external snubber required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS30600X Same SOT89 package, 100 V VCEO, but lower IC = 3.5 A and higher VCE(sat) = 220 mV at 3.5 A. Less suitable for 4.5 A continuous loads; acceptable only with significant thermal derating. Select when cost sensitivity outweighs current headroom and efficiency requirements.
Diodes Incorporated DXTN3060P5-13 Higher VCEO = 120 V, same 4.5 A IC, but slower toff = 1.2 µs and larger SOT-223 package. Requires more PCB area and offers inferior switching speed; better for overvoltage margin over 100 V. Choose only if system requires >100 V blocking or legacy SOT-223 footprint compatibility.

Compared with NSS30600X and DXTN3060P5-13, PBSS306NX,115 delivers superior conduction efficiency at full rated current and faster switching in the same compact SOT89 footprint-making it optimal for space-constrained, high-efficiency 48–60 V power stages.

Availability

PBSS306NX,115 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, MOSFET gate driving, and motor control applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PBSS306NX,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PBSS306NX,115 belongs to Nexperia's "Low VCE(sat) Transistor" product line, engineered specifically for high-efficiency, high-voltage switching in industrial power management and motor control systems-not automotive-qualified per revision v.4 (20250930).

FAQ

What is the maximum allowable junction temperature for PBSS306NX,115?

The absolute maximum junction temperature is 150 °C, as defined in IEC 60134 limiting values. Operation above this temperature risks permanent degradation of hFE and increased leakage. Derating is required above 25 °C ambient per Fig. 1 power curves-e.g., max Ptot drops to 1.65 W at 75 °C ambient on standard FR4.

Can PBSS306NX,115 be used in a high-side switch configuration?

Yes-it supports high-side operation when driven with sufficient base current (≥225 mA at 4.5 A IC) and proper level-shifting circuitry. Its 100 V VCEO and low VCE(sat) make it viable for 48 V bus high-side switching, though thermal management of the collector pad remains critical due to lack of heatsink attachment in SOT89.

Is PBSS306NX,115 qualified for automotive applications?

No. Per revision v.4 (30 September 2025), this part is explicitly designated non-automotive qualified. Nexperia states it is "not suitable for automotive use" and recommends dedicated -Q qualified alternatives (e.g., PBSS306NX-Q) for AEC-Q101-compliant designs.

What is the recommended PCB layout for optimal thermal performance?

For best thermal performance, connect Pin 2 (collector) to a ≥6 cm² copper pour on the top layer using multiple thermal vias to inner/ground planes. Use the wave-soldering footprint (Fig. 17) for mechanical stability and the reflow footprint (Fig. 16) for fine-pitch assembly. Avoid isolating the collector pad-its thermal path is essential to achieve Rth(j-a) ≤ 76 K/W.

PBSS306NX,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4.5 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
245mV @ 225mA, 4.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 2A, 2V
Power - Max:
2.1 W
Frequency - Transition:
110MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

PBSS306NX,115 FAQ

1.How can I place an order for PBSS306NX,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS306NX,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS306NX,115 reliable?

The price and inventory of PBSS306NX,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS306NX,115 is usually 5 days.

3.What payment methods are accepted for PBSS306NX,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS306NX,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS306NX,115?

PBSS306NX,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS306NX,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS306NX,115?

For technical support, including PBSS306NX,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS306NX,115 requirements.

6.How does Aetrix verify that PBSS306NX,115 is sourced from the original manufacturer or authorized distributors?

All PBSS306NX,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS306NX,115 meets industry standards.

7.What is the process for return or replacement of PBSS306NX,115?

All PBSS306NX,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS306NX,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS306NX,115 part is unused and in its original packaging.

Return procedure for PBSS306NX,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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