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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS306NZ,135

Name: PBSS306NZ,135
Brand: Nexperia USA Inc.
SKU: PBSS306NZ,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS306NZ,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS306NZ,135.pdf

Description:: TRANS NPN 100V 5.1A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS306NZ,135 from Nexperia is an NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-voltage switching roles with 100 V V_CEO, 5.1 A continuous I_C, and 43–60 mΩ R_CEsat at 4 A/200 mA drive-used in automotive motor control and high-voltage DC-DC converters.

For engineers reviewing the PBSS306NZ,135 datasheet, PBSS306NZ,135 pinout, PBSS306NZ,135 application, or PBSS306NZ,135 equivalent, this page delivers verified electrical specs, thermal derating behavior, switching timing (t_on = 330 ns, t_off = 530 ns), and PCB-mounting guidance for high-current, high-efficiency discrete power switching designs.

Technical Context

This BISS transistor uses a proprietary epitaxial structure to achieve ultra-low saturation resistance while maintaining high current gain (h_FE = 85 typ. at I_C = 4 A) and robust 100 V breakdown rating. Its dual-collector configuration (pins 2 and 4) enables enhanced thermal dissipation on FR4 PCBs.

It operates with base-emitter turn-on voltage of 0.78–0.85 V at 2 A, and exhibits stable V_CEsat across temperature (−55 °C to +150 °C), supporting reliable gate driving and power switch applications where thermal stability and low conduction loss are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Withstands up to 100 V collector-emitter voltage with base open, enabling use in 48 V+ industrial and automotive power rails.
I_C	5.1 A continuous - Supports sustained load currents typical of fan/motor drivers and DC-DC primary-side switches without forced cooling.
R_CEsat	43–60 mΩ at I_C = 4 A, I_B = 200 mA - Delivers <0.24 W conduction loss at 4 A, reducing heatsink requirements vs. standard bipolar transistors.
t_off	530 ns - Fast turn-off supports PWM frequencies up to ~300 kHz in hard-switched topologies with minimal switching loss penalty.
h_FE	50–85 at I_C = 4 A - Maintains usable current gain under high-current saturation, easing base drive design versus conventional low-gain power transistors.
T_j max	150 °C - Enables operation in under-hood automotive environments and enclosed industrial enclosures without derating below ambient +125 °C.
R_th(j-a)	74 K/W on FR4 with 6 cm² collector pad - Confirmed thermal path allows 1.7 W power dissipation at 25 °C ambient, matching typical SOT223-based power stage needs.

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads and integrated heatsink pad; pins 2 and 4 are internally connected collectors for improved thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~200 mA base current to fully saturate at 4 A collector current; low V_BEsat (0.94–1.05 V) eases driver selection.
2	Collector	Main high-current output terminal; electrically tied to pin 4 for doubled copper connection area and lower thermal resistance.
3	Emiter	Reference node for load return path; bonded directly to internal emitter region with low-inductance layout for stable switching.
4	Collector	Secondary collector terminal, internally shorted to pin 2-used to increase solder land area and improve heat spreading on PCB.

Key Features

Feature	Design Value
Low V_CEsat	170–240 mV at 4 A/200 mA drive-reduces conduction loss by >50% vs. standard bipolar transistors, lowering thermal stress in compact layouts.
Dual-collector thermal design	Pins 2 and 4 both serve as collector terminals-enables 6 cm² mounting pad for 74 K/W R_th(j-a), improving reliability in thermally constrained designs.
High h_FE at high I_C	85 typ. at 4 A-allows smaller base drive circuits and reduces driver power consumption compared to low-gain alternatives.
Automotive-qualified construction	AEC-Q101 stress-tested per Nexperia's qualification program-supports deployment in engine control, HVAC, and body electronics without additional screening.
FR4-compatible footprint	Standard SOT223 land pattern (6.15 × 3.85 mm) with 1.2 mm solder lands-compatible with reflow and wave soldering per JEDEC J-STD-020/003.

Applications

High-Voltage DC-DC Conversion

Automotive Motor Control

Use Scenario: Primary-side switch in isolated 24–48 V input DC-DC converters for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage NPN power switch operating in hard-switched forward or push-pull topology with 330 ns t_on/530 ns t_off.

Use Value: 43 mΩ R_CEsat limits conduction loss to <0.7 W at 4 A, enabling >92% efficiency without heatsink in 10 W–25 W designs.

Use Scenario: Low-side driver for brushed DC motors in automotive seat adjusters, window lifts, and HVAC blowers.

IC Role / Device Role / Timing Role: High-current saturated switch handling 3–5 A loads with fast turn-off to suppress inductive kickback during PWM commutation.

Use Value: 100 V V_CEO withstands load-dump transients up to 87 V, eliminating need for external clamping in 12 V/24 V systems.

High-Voltage MOSFET Gate Driving

High-Voltage Power Switches

Use Scenario: Totem-pole driver stage for high-side N-channel MOSFETs in half-bridge inverters and SMPS controllers.

IC Role / Device Role / Timing Role: NPN emitter-follower providing 4 A peak sink current to rapidly discharge MOSFET gate capacitance.

Use Value: 0.94 V V_BEsat at 4 A ensures <0.1 V gate undershoot, preventing accidental MOSFET turn-on during switching transitions.

Use Scenario: Solid-state replacement for mechanical relays in industrial PLC output modules and smart home load controllers.

IC Role / Device Role / Timing Role: Main power switch controlling resistive/inductive loads up to 5.1 A at ≤100 V DC.

Use Value: 150 °C T_j max and −65 °C to +150 °C storage range support operation in uncontrolled ambient environments like outdoor junction boxes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage, low-saturation power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PHPT60603NY	60 V V_CEO, 3 A I_C, SOT23 package - lower voltage/current rating and smaller thermal mass.	Limited to ≤24 V systems; unsuitable for 48 V DC-DC or automotive 12 V load-dump scenarios.	Select only for space-constrained, low-power (<10 W) applications where 100 V rating is unnecessary.
PBSS306PZ	PNP complement with identical V_CEO, I_C, and R_CEsat - same package, mirrored polarity.	Used in complementary emitter-follower drivers or high-side switch configurations requiring PNP topology.	Choose when building symmetrical push-pull stages or replacing PNP devices in existing designs; not a functional drop-in substitute.

Compared with PHPT60603NY, PBSS306NZ,135 delivers 67% higher blocking voltage and 70% higher current, enabling direct use in 48 V automotive and industrial power systems; versus PBSS306PZ, it provides NPN polarity essential for low-side switching and gate-sink applications where PNP cannot be substituted.

Availability

PBSS306NZ,135 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive motor control, and industrial power switching requiring stable component supply and long-term production continuity.

Supply support for PBSS306NZ,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS306NZ,135 belongs to Nexperia's BISS transistor product line-engineered specifically for high-efficiency, high-voltage switching applications where low V_CEsat and thermal robustness are prioritized over general-purpose amplification.

FAQ

What is the maximum safe operating current for PBSS306NZ,135 at 85 °C ambient?

At 85 °C ambient, the device's total power dissipation must be limited to ≤1.0 W based on its 74 K/W R_th(j-a) on FR4 with 6 cm² pad. With R_CEsat = 43 mΩ, the corresponding safe continuous collector current is approximately 4.8 A-within its 5.1 A rated I_C but respecting thermal margin.

Can PBSS306NZ,135 replace a standard bipolar transistor like BC817 in high-current applications?

No-it is not a drop-in replacement for BC817. PBSS306NZ,135 has higher V_CEO (100 V vs. 45 V), higher I_C (5.1 A vs. 0.5 A), SOT223 package (vs. SOT23), and requires ~200 mA base drive (vs. ~5 mA). Circuit redesign-including base resistor, PCB layout, and thermal pad-is mandatory.

Does PBSS306NZ,135 require a heatsink in typical 4 A operation?

Not necessarily: with a 6 cm² copper pad on FR4, its R_th(j-a) is 74 K/W, allowing 1.7 W dissipation at 25 °C ambient. At 4 A and 200 mV V_CEsat, power loss is 0.8 W-well within limit. Heatsinking becomes advisable only above 60 °C ambient or with poor PCB copper coverage.

Is PBSS306NZ,135 qualified for automotive applications per AEC-Q101?

Yes-Nexperia qualifies PBSS306NZ under AEC-Q101 for stress testing including HTGB, HTRB, and temperature cycling. Its 150 °C T_j max, −65 °C to +150 °C storage range, and 100 V V_CEO support deployment in engine bay and chassis-mounted modules per automotive OEM requirements.

PBSS306NZ,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5.1 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 255mA, 5.1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS306NZ,135 FAQ

1.How can I place an order for PBSS306NZ,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS306NZ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS306NZ,135 reliable?

The price and inventory of PBSS306NZ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS306NZ,135 is usually 5 days.

3.What payment methods are accepted for PBSS306NZ,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS306NZ,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS306NZ,135?

PBSS306NZ,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS306NZ,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS306NZ,135?

For technical support, including PBSS306NZ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS306NZ,135 requirements.

6.How does Aetrix verify that PBSS306NZ,135 is sourced from the original manufacturer or authorized distributors?

All PBSS306NZ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS306NZ,135 meets industry standards.

7.What is the process for return or replacement of PBSS306NZ,135?

All PBSS306NZ,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS306NZ,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS306NZ,135 part is unused and in its original packaging.

Return procedure for PBSS306NZ,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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