Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS306NZ-QF

Name: PBSS306NZ-QF
Brand: Nexperia USA Inc.
SKU: PBSS306NZ-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PBSS306NZ-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS306NZ-QF.pdf

Description:: TRANS NPN 100V 5.1A SOT-223

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,293

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PBSS306NZ-QF from Nexperia is an NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT223 (SC-73) package, designed for high-voltage switching roles where low conduction loss and thermal efficiency are critical. It delivers 100 V V_CEO, 5.1 A continuous collector current, and 43–60 mΩ R_CEsat at I_C = 4 A / I_B = 200 mA - enabling compact, high-efficiency DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS306NZ-QF datasheet, PBSS306NZ-QF pinout, PBSS306NZ-QF application, or PBSS306NZ-QF equivalent, key selection criteria include its low saturation resistance, high h_FE at high current (e.g., 85 typ. at I_C = 4 A), dual-collector thermal design, and suitability for automotive-grade high-voltage power switches requiring stable gain and fast switching (t_on = 330 ns, t_off = 530 ns).

Technical Context

This BISS transistor uses a proprietary epitaxial structure to achieve ultra-low V_CEsat while maintaining high h_FE up to 5.1 A - unlike conventional planar transistors that trade gain for saturation voltage. Its dual-collector (pins 2 & 4) configuration enhances thermal dissipation on PCBs with extended copper pads.

The device operates with base-emitter turn-on voltage of 0.78–0.85 V at I_C = 2 A and exhibits f_T = 110 MHz, supporting high-speed switching in motor control and power supply feedback paths. Thermal resistance drops to 63 K/W on ceramic Al₂O₃ substrates, confirming its use in thermally constrained industrial modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - supports high-side switching in 48 V and 60 V DC bus systems without derating.
I_C	5.1 A continuous - enables single-transistor replacement for legacy 3–4 A devices in fan/motor drivers.
R_CEsat	43–60 mΩ at I_C = 4 A / I_B = 200 mA - reduces conduction loss by >40% vs. standard NPNs, lowering heatsink requirements.
h_FE	50–85 at I_C = 4 A - ensures reliable saturation with moderate base drive (I_B = 200 mA), easing MCU GPIO interface.
t_off	530 ns - enables PWM operation up to ~300 kHz in synchronous rectifier or gate driver applications.
P_tot	1.7 W on FR4 with 6 cm² collector pad - allows direct mounting on standard PCBs without external heatsinks in <10 W power stages.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with integrated heatsink pad; 4-terminal layout optimized for thermal performance and PCB copper area utilization.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input; requires 200 mA drive for full saturation at 4 A load - compatible with logic-level drivers or microcontroller outputs via small series resistor.
2 & 4	Collector (dual)	Power output node with shared thermal path; both pins must be connected to large copper pour for optimal R_th(j-a) = 74 K/W (FR4, 6 cm²).
3	Emiter	Reference/return node; tied to ground or low-side switch node; low-inductance routing recommended for EMI-sensitive motor control.

Key Features

Feature	Design Value
Low V_CEsat	170–240 mV at I_C = 4 A / I_B = 200 mA - cuts conduction loss to <0.96 W, reducing thermal stress in sealed enclosures.
Dual-collector thermal design	Pins 2 and 4 electrically and thermally parallel - doubles effective copper attachment area, improving long-term reliability under thermal cycling.
High h_FE at high current	85 typical at I_C = 4 A - eliminates need for Darlington pairing or external current amplification in space-constrained designs.
Fast switching	t_on = 330 ns, t_off = 530 ns - supports high-frequency PWM without excessive switching loss, critical for compact SMPS designs.

Applications

High-Voltage DC-DC Conversion

High-Voltage MOSFET Gate Driving

Use Scenario: Step-down converter in industrial PLC power supplies operating from 60 V DC input.

IC Role / Device Role / Timing Role: Main switching transistor in non-synchronous buck topology, handling 4 A peak inductor current at 250 kHz.

Use Value: Low R_CEsat minimizes duty-cycle-dependent conduction loss, enabling >92% efficiency without forced air cooling.

Use Scenario: High-side gate driver for 100 V N-channel MOSFET in half-bridge motor inverter.

IC Role / Device Role / Timing Role: Level-shifting saturated switch delivering 400 mA peak gate charge current with <530 ns turn-off delay.

Use Value: Fast t_off and low V_CEsat reduce shoot-through risk and gate drive power dissipation by 35% vs. standard transistors.

Automotive HVAC Blower Control

Industrial Fan Speed Regulation

Use Scenario: PWM-controlled blower motor driver in 48 V mild-hybrid vehicle cabin systems.

IC Role / Device Role / Timing Role: Low-side switch interfacing directly with automotive MCU GPIO, driving 3.5 A resistive-inductive load.

Use Value: Stable h_FE across −40 °C to +125 °C ensures consistent saturation margin over full automotive temperature range.

Use Scenario: Constant-current switch in variable-speed exhaust fan module for factory automation cabinets.

IC Role / Device Role / Timing Role: High-voltage linear regulator bypass switch, clamping voltage during transient surges up to 100 V.

Use Value: 100 V V_CEO and 10.2 A I_CM withstand inductive kickback from 240 VAC-derived DC bus without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS30600PZT	100 V V_CEO, 6 A I_C, but higher R_CEsat (75 mΩ @ 4 A) and lower h_FE (40 typ. @ 4 A).	Requires higher base drive (300 mA) and larger heatsink due to 75% higher conduction loss.	Choose when higher peak current margin is prioritized over thermal efficiency and board space.
Diodes Incorporated DXT601100Q-13	100 V V_CEO, 5 A I_C, but slower switching (t_off = 1.2 μs) and no dual-collector thermal enhancement.	Limited to ≤100 kHz PWM; unsuitable for compact gate drivers due to thermal bottleneck on single-collector SOT23-3.	Choose only for cost-sensitive, low-frequency (<50 kHz), non-automotive applications where size and speed are secondary.

Compared with NSS30600PZT and DXT601100Q-13, PBSS306NZ-QF uniquely balances low R_CEsat, high h_FE, fast t_off, and dual-collector thermal design - making it the only option among the three qualified for automotive-grade 250+ kHz gate driving and space-constrained 48–60 V DC-DC converters.

Availability

PBSS306NZ-QF is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive HVAC blower control, and industrial fan speed regulation requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for PBSS306NZ-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS306NZ-QF belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-voltage switching applications where minimizing conduction loss and thermal footprint is essential - not general-purpose amplification.

FAQ

What is the maximum allowable base current for continuous operation?

The datasheet specifies I_B = 200 mA as the nominal drive for 4 A collector current, with absolute maximum I_B limited by package thermal constraints. Continuous I_B > 250 mA risks exceeding junction temperature limits on standard FR4 PCBs, even with full copper pour. For sustained 5.1 A operation, I_B must remain ≤255 mA per the V_CEsat test condition, and thermal design must ensure T_j ≤150 °C.

Can PBSS306NZ-QF replace a conventional NPN transistor like BC817 in high-current applications?

No - BC817 is rated for 500 mA I_C and 45 V V_CEO, making it unsuitable for PBSS306NZ-QF's 5.1 A / 100 V domain. Direct substitution would cause immediate thermal runaway or voltage breakdown. PBSS306NZ-QF targets applications where BC817 would require paralleling or Darlington configurations; its value lies in single-device simplification, not drop-in compatibility.

Is the SOT223 package lead-free and RoHS compliant?

Yes - PBSS306NZ-QF is manufactured in accordance with Nexperia's standard RoHS-compliant process, using lead-free solderable terminations and halogen-free molding compound. The "-QF" suffix denotes qualification to AEC-Q101 for automotive applications, including full Pb-free reflow profile compliance (JEDEC J-STD-020D, peak 260 °C).

How does the dual-collector configuration affect PCB layout?

Pins 2 and 4 must be routed to the same net and connected to a shared, thermally optimized copper area - ideally ≥6 cm² on inner or outer layer with multiple thermal vias to internal planes. Splitting them or routing separately degrades thermal resistance by up to 2.4× and risks current imbalance, leading to localized overheating and premature failure.

PBSS306NZ-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5.1 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 255mA, 5.1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 700 mW

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS306NZ-QF FAQ

1.How can I place an order for PBSS306NZ-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS306NZ-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS306NZ-QF reliable?

The price and inventory of PBSS306NZ-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS306NZ-QF is usually 5 days.

3.What payment methods are accepted for PBSS306NZ-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS306NZ-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS306NZ-QF?

PBSS306NZ-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS306NZ-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS306NZ-QF?

For technical support, including PBSS306NZ-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS306NZ-QF requirements.

6.How does Aetrix verify that PBSS306NZ-QF is sourced from the original manufacturer or authorized distributors?

All PBSS306NZ-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS306NZ-QF meets industry standards.

7.What is the process for return or replacement of PBSS306NZ-QF?

All PBSS306NZ-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS306NZ-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS306NZ-QF part is unused and in its original packaging.

Return procedure for PBSS306NZ-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…