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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS306PX-QX

Name: PBSS306PX-QX
Brand: Nexperia USA Inc.
SKU: PBSS306PX-QX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS306PX-QX

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBSS306PX-QX.pdf

Description:: TRANS PNP 100V 3.7A SOT-89

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS306PX-Q from Nexperia is a PNP low V_CEsat transistor in SOT89 package, rated for 100 V V_CEO, 3.7 A continuous collector current, and 52 mΩ typical R_CEsat. It serves as a high-efficiency power switch in automotive-grade high-voltage DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS306PX-Q datasheet, PBSS306PX-Q pinout, PBSS306PX-Q application, or PBSS306PX-Q equivalent, this device offers AEC-Q101 qualification, verified thermal performance on FR4 and ceramic PCBs, and documented switching times (t_on = 200 ns, t_off = 325 ns) under defined test conditions.

Technical Context

This PNP transistor operates with V_CE = −2 V and supports IC up to −4 A at IB = −400 mA, delivering h_FE of 25–40 and V_CEsat as low as −210 mV. Its design targets high-current saturation with minimal conduction loss in switching applications.

Thermal resistance varies by mounting: R_th(j-a) is 208 K/W on standard FR4, 76 K/W with 6 cm² collector pad, and 60 K/W on Al₂O₃ ceramic PCB. Junction temperature is rated to 150 °C, supporting operation in automotive under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Withstands 100 V collector-emitter voltage with base open, enabling use in high-voltage motor control and DC-DC stages.
I_C	−3.7 A - Continuous collector current rating defines maximum steady-state load-handling capability in power switch roles.
R_CEsat	52 mΩ (typ) - Low saturation resistance reduces I²R losses and heat generation at 4 A, improving system efficiency.
h_FE	25–40 @ IC = −4 A - Sufficient current gain to drive with modest base current (e.g., −400 mA), easing driver circuit design.
t_off	325 ns - Verified turn-off time under V_CC = −12.5 V, I_C = −3 A, enabling >1 MHz switching in optimized layouts.
V_BEsat	−0.93 V (typ) - Base-emitter saturation voltage confirms reliable turn-on with standard logic-level or dedicated gate drivers.
f_T	100 MHz - Transition frequency indicates usable bandwidth for moderate-speed switching and analog amplification.

Pinout & Package

SOT89 (SC-62/TO-243) plastic surface-mount package: 3 leads, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body. Collector tab is electrically connected to Pin 2 and thermally critical for power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit path; tied to system ground or negative rail in high-side switch configurations.
2	Collector	Main power output terminal; electrically and thermally connected to exposed metal tab for heatsinking.
3	Base	Control input; requires negative current injection (−400 mA typical) to saturate the transistor.

Key Features

Feature	Design Value
Low V_CEsat	−210 mV typ at IC = −4 A - Reduces conduction loss by >40% vs. conventional PNP transistors, lowering thermal stress.
AEC-Q101 qualified	Qualified per Automotive Electronics Council stress test standard - Validated for under-hood automotive use including temperature cycling and HTRB.
High I_C/I_CM	−3.7 A continuous / −7.4 A peak - Supports robust transient loads in motor startup and fault conditions without derating.
Optimized thermal footprint	Standard SOT89 layout compatible with 6 cm² collector pad - Enables 1.65 W power dissipation on FR4, doubling capability over baseline.
Fast switching	t_on = 200 ns, t_off = 325 ns - Measured under defined V_CC = −12.5 V, IC = −3 A conditions, suitable for high-frequency SMPS.

Applications

High-Voltage DC-DC Conversion

Automotive High-Side Power Switch

Use Scenario: Step-down converter in 48 V automotive subsystems powering infotainment or ADAS ECUs.

IC Role / Device Role / Timing Role: PNP high-side switch controlling energy transfer during PWM cycles.

Use Value: 52 mΩ R_CEsat minimizes dropout and improves conversion efficiency above 92% at 3 A load.

Use Scenario: Load disconnect switch for battery management systems in EVs and HEVs.

IC Role / Device Role / Timing Role: AEC-Q101-compliant PNP switch isolating downstream circuits during fault events.

Use Value: −100 V V_CEO withstands load-dump transients; 150 °C T_j rating ensures reliability in engine bay environments.

TFT Backlight Inverter Driver

High-Voltage MOSFET Gate Driver

Use Scenario: Current source stage in LCD panel backlight inverters requiring stable 100 V swing.

IC Role / Device Role / Timing Role: Linear-mode PNP current regulator driving resonant transformer primary.

Use Value: h_FE ≥ 25 at −4 A enables precise current control with low base drive overhead.

Use Scenario: Active pull-down stage in high-side gate driver ICs for 100 V N-channel MOSFETs.

IC Role / Device Role / Timing Role: Fast-turn-off PNP sink for rapid gate discharge during switching transitions.

Use Value: 325 ns t_off ensures <100 ns dead-time margin at 500 kHz switching, preventing shoot-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201CF8T1G	V_CEO = −100 V, I_C = −2.5 A, R_CEsat = 110 mΩ (typ) - Lower current rating and higher saturation resistance.	Not qualified to AEC-Q101; limited to industrial/commercial ambient (−55 °C to +150 °C not validated).	Select when cost sensitivity outweighs automotive qualification and 3.7 A current demand.
Diodes Incorporated DXT306PN-13	V_CEO = −100 V, I_C = −3.5 A, R_CEsat = 65 mΩ (typ) - Slightly lower current and higher R_CEsat; TO-252 package.	TO-252 offers better thermal performance but larger PCB area; no AEC-Q101 documentation publicly available.	Choose for improved thermal management where board space permits and automotive qualification is secondary.

Compared with NSS12201CF8T1G and DXT306PN-13, PBSS306PX-Q delivers higher continuous current, lower R_CEsat, and full AEC-Q101 validation - making it the preferred choice for automotive power switches demanding both performance and compliance.

Availability

PBSS306PX-Q is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, automotive power switching, and TFT backlight inverter designs requiring stable component supply across production lifecycles.

Supply support for PBSS306PX-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with roots in Philips Semiconductors and headquartered in Nijmegen, Netherlands.

PBSS306PX-Q belongs to Nexperia's Automotive-Qualified Low V_CEsat Transistor product line, engineered specifically for efficient, robust power switching in 12 V–48 V automotive subsystems and industrial power supplies.

FAQ

Is PBSS306PX-Q pin-compatible with its NPN complement PBSS306NX-Q?

No - PBSS306PX-Q (PNP) and PBSS306NX-Q (NPN) share identical SOT89 package and pin numbering (E-C-B), but their polarity and biasing requirements differ fundamentally. Circuit redesign is required to substitute one for the other; they are functional complements, not pin-compatible replacements.

What is the maximum allowable PCB copper area for the collector pad to achieve 2.1 W power dissipation?

The 2.1 W rating applies only when mounted on a ceramic PCB (Al₂O₃) with standard footprint - no additional copper area is specified for that condition. For FR4, 6 cm² collector pad yields 1.65 W; achieving 2.1 W requires ceramic substrate per Table 5 footnote [3].

Does PBSS306PX-Q support linear-mode operation for analog current regulation?

Yes - datasheet characteristics include h_FE, V_BE, and V_CEsat curves across IC from −0.1 A to −4 A at multiple temperatures, confirming validated linear-region behavior. Thermal derating must be applied per Fig. 1 when operating continuously in active mode.

How does the −5 V V_EBO rating impact base drive circuit design?

The −5 V emitter-base breakdown limit means base must never be driven more than 5 V below emitter potential. In high-side configurations, this constrains base driver swing - e.g., with emitter at 48 V, base must stay ≥43 V to avoid reverse-bias damage during transients or startup.

PBSS306PX-QX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3.7 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 600 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBSS306PX-QX FAQ

1.How can I place an order for PBSS306PX-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS306PX-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS306PX-QX reliable?

The price and inventory of PBSS306PX-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS306PX-QX is usually 5 days.

3.What payment methods are accepted for PBSS306PX-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS306PX-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS306PX-QX?

PBSS306PX-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS306PX-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS306PX-QX?

For technical support, including PBSS306PX-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS306PX-QX requirements.

6.How does Aetrix verify that PBSS306PX-QX is sourced from the original manufacturer or authorized distributors?

All PBSS306PX-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS306PX-QX meets industry standards.

7.What is the process for return or replacement of PBSS306PX-QX?

All PBSS306PX-QX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS306PX-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS306PX-QX part is unused and in its original packaging.

Return procedure for PBSS306PX-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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