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Nexperia USA Inc. PBSS3515MB,315

Part No.:
PBSS3515MB,315
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-XFDFN
Datasheet:
AetrixPBSS3515MB,315.pdf
Description:
TRANS PNP 15V 0.5A DFN1006B-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,246

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Product details

Overview

PBSS3515MB from Nexperia is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra-small leadless SOT883B package, designed for high-efficiency switching in space-constrained DC-DC converters and battery-powered systems. It delivers −15 V VCEO, −500 mA IC, 500 mΩ RCEsat at −500 mA/−50 mA drive, AEC-Q101 qualification, and 0.37 mm profile for ultra-thin PCBs.

For engineers reviewing the PBSS3515MB datasheet, PBSS3515MB pinout, PBSS3515MB application, or PBSS3515MB equivalent, this device is selected for low-loss power switching where minimal board area, thermal efficiency, and automotive-grade reliability are critical - especially in LED backlighting, supply-line switching, and low-voltage driver stages.

Technical Context

This PNP BISS transistor uses optimized epitaxial base and emitter structures to achieve sub-250 mV VCEsat at −500 mA collector current with −50 mA base drive, enabling higher efficiency than standard PNP transistors in pulsed switching applications. Its low RCEsat (500 mΩ) and high hFE (90–200) across operating current range support stable gain-controlled saturation without external current limiting.

The SOT883B package integrates three solderable terminals (base, emitter, collector) on a 1.0 × 0.6 × 0.37 mm body with 0.22 mm pad pitch and FR4-compatible thermal resistance (212 K/W with 1 cm² collector pad), making it suitable for reflow-only assembly in high-density automotive and portable electronics layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −15 V: Maximum safe collector-emitter voltage under open-base condition; defines maximum supply rail compatibility in PNP high-side switch configurations.
IC −500 mA continuous: Rated DC collector current; supports sustained load switching in battery chargers and LED drivers without derating at 25 °C ambient.
RCEsat 500 mΩ at −500 mA/−50 mA: On-resistance directly determines conduction loss (P = I²R); enables <125 mW dissipation at full rated current.
VCEsat −250 mV max at −500 mA/−50 mA: Low saturation voltage reduces voltage drop across switch, preserving headroom in low-voltage (e.g., 3.3 V or 5 V) supply rails.
hFE 90 min at −500 mA: Minimum DC current gain ensures reliable saturation with modest base drive, reducing required base current and driver complexity.
Tj max 150 °C: Maximum junction temperature; combined with 212 K/W θj-a (with 1 cm² pad), allows ~2.8 W peak power handling in short pulses.
AEC-Q101 Qualified: Meets stress-test requirements for automotive discrete semiconductors, supporting use in under-hood and infotainment power stages.

Pinout & Package

SOT883B is a leadless, ultra-compact surface-mount plastic package measuring 1.0 × 0.6 × 0.37 mm with three coplanar solder lands. Its low height and fine pitch (0.22 mm) enable placement in tight spaces while maintaining thermal performance via direct copper pad coupling.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input terminal; accepts −50 mA pulsed base current to fully saturate the transistor at −500 mA collector load.
2 Emitter (E) Common reference node for PNP operation; connected to higher potential rail (e.g., battery +) in high-side switch topologies.
3 Collector (C) Switched output terminal; carries −500 mA load current to ground or lower-potential node; thermally coupled to PCB pad for heat dissipation.

Key Features

Feature Design Value
Ultra-low profile 0.37 mm height enables integration into slim portable devices and stacked PCB assemblies where Z-axis clearance is constrained.
Low RCEsat 500 mΩ minimizes I²R losses during conduction, improving system efficiency and reducing thermal management burden in battery-operated gear.
AEC-Q101 qualification Validated for automotive temperature range (−55 °C to +150 °C) and stress tests, permitting use in engine control, lighting, and ADAS subsystems.
High ICM −1 A peak pulse rating supports surge currents in motor start-up, capacitor charging, or fault-tolerant LED string control.
Reduced PCB footprint 1.0 × 0.6 mm body with 0.22 mm pad pitch cuts board area by >60% vs. SOT23, freeing space for routing or additional components.

Applications

DC-to-DC Conversion Supply Line Switching

Use Scenario: Used as synchronous rectifier or high-side switch in buck or SEPIC converters operating from 3.3 V or 5 V inputs.

IC Role / Device Role / Timing Role: PNP BISS transistor functioning as low-loss power switch in the main current path, controlled by PWM signal through base resistor network.

Use Value: Sub-250 mV VCEsat preserves output voltage headroom and reduces conduction loss by >40% versus standard PNP transistors at 500 mA.

Use Scenario: Enables/disables power to peripheral modules (e.g., sensors, radios) in battery-powered IoT nodes based on system sleep/wake state.

IC Role / Device Role / Timing Role: High-side load switch isolating downstream circuitry from main supply; driven by microcontroller GPIO.

Use Value: 500 mΩ RCEsat limits dropout to <250 mV at 500 mA, ensuring stable 3.0 V delivery to sensitive loads during active mode.

Battery Charger Control LCD Backlighting

Use Scenario: Controls charging current path between USB input and Li-ion cell in compact portable chargers with thermal constraints.

IC Role / Device Role / Timing Role: Precision current-switching element in constant-current regulation loop, modulated via base current feedback.

Use Value: Stable hFE (90–200) across −10 mA to −500 mA enables accurate current mirroring without external sense resistors.

Use Scenario: Drives white LED strings in smartphone or tablet displays requiring low-voltage, high-efficiency current sourcing.

IC Role / Device Role / Timing Role: Constant-current source configured in common-emitter mode, with emitter tied to regulated current-sense resistor.

Use Value: −15 V VCEO accommodates forward voltage stacks up to 12 V, while 0.37 mm height fits beneath thin display bezels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS3515T Same die in SOT23 package (2.9 × 1.3 × 1.1 mm); higher RCEsat (600 mΩ) and taller profile. Less suitable for ultra-thin designs but easier to hand-solder and probe; better thermal margin on small pads. Select when manual assembly, test access, or higher power dissipation (>300 mW continuous) is required.
DMT3005LPSQ PNP MOSFET (−30 V, −500 mA) in SOT883B; gate-driven, zero gate current, but higher VGS(th) (−1.5 V typ). Eliminates base current but requires ≥2.5 V logic swing for full enhancement; less predictable turn-on in low-voltage systems. Select when driving from 3.3 V logic with minimal base-drive overhead, accepting trade-off in threshold sensitivity and SOA.

Compared with PBSS3515MB, PBSS3515T trades miniaturization for serviceability and thermal headroom, while DMT3005LPSQ replaces bipolar control with MOSFET simplicity at the cost of gate voltage dependency - both require layout and drive-circuit adjustments.

Availability

PBSS3515MB is available at Aetrix Electronics and suitable for DC-DC conversion, supply line switching, and LCD backlighting applications requiring stable component supply, automotive-grade reliability, and ultra-compact packaging.

Supply support for PBSS3515MB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

PBSS3515MB belongs to Nexperia's BISS transistor family, engineered specifically for high-efficiency, space-constrained power switching in battery-powered and automotive electronics where low VCEsat and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous collector current for PBSS3515MB at 85 °C ambient?

At Tamb = 85 °C, the maximum continuous collector current is derated to −375 mA, calculated using the 250 mW Ptot rating at 25 °C and thermal resistance of 500 K/W (free air). This ensures junction temperature remains below 150 °C under steady-state conditions.

Can PBSS3515MB be used in linear regulator pass-transistor applications?

No - PBSS3515MB is optimized for saturated switching, not linear operation. Its RCEsat and VCEsat specs apply only under pulsed or saturated conditions; linear-mode power dissipation would exceed its 250 mW free-air rating and risk thermal runaway due to negative temperature coefficient of VCEsat.

Is reflow soldering mandatory for PBSS3515MB?

Yes - Nexperia specifies reflow soldering as the only recommended method for SOT883B packages. The ultra-fine pitch (0.22 mm) and leadless construction make wave or hand soldering unreliable; reflow profiles must follow JEDEC J-STD-020 Class 3 guidelines with peak temperature ≤260 °C.

How does the AEC-Q101 qualification impact PCB layout for PBSS3515MB?

AEC-Q101 qualification confirms robustness across −55 °C to +150 °C, but layout must still respect thermal limits: use ≥1 cm² copper pour under the collector pad, avoid thermal vias near solder lands, and maintain ≥0.2 mm clearance to adjacent traces to prevent solder bridging during reflow - all per Nexperia's SOT883B footprint recommendation.

PBSS3515MB,315 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
25mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 10mA, 2V
Power - Max:
250 mW
Frequency - Transition:
280MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1006B-3

PBSS3515MB,315 FAQ

1.How can I place an order for PBSS3515MB,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS3515MB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS3515MB,315 reliable?

The price and inventory of PBSS3515MB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS3515MB,315 is usually 5 days.

3.What payment methods are accepted for PBSS3515MB,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS3515MB,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS3515MB,315?

PBSS3515MB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS3515MB,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS3515MB,315?

For technical support, including PBSS3515MB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS3515MB,315 requirements.

6.How does Aetrix verify that PBSS3515MB,315 is sourced from the original manufacturer or authorized distributors?

All PBSS3515MB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS3515MB,315 meets industry standards.

7.What is the process for return or replacement of PBSS3515MB,315?

All PBSS3515MB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS3515MB,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS3515MB,315 part is unused and in its original packaging.

Return procedure for PBSS3515MB,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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