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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4021NZ-QX

Name: PBSS4021NZ-QX
Brand: Nexperia USA Inc.
SKU: PBSS4021NZ-QX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4021NZ-QX

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS4021NZ-QX.pdf

Description:: TRANS NPN 20V 8A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4021NZ-QX from Nexperia is an AEC-Q101-qualified NPN low V_CEsat transistor in SOT223 (SC-73) package, rated for 20 V V_CEO, 8 A continuous collector current, and 14 mΩ typical R_CEsat. It serves as a high-efficiency power switch in automotive loadswitch and battery charging circuits where thermal performance and board space are critical.

For engineers reviewing the PBSS4021NZ-QX datasheet, PBSS4021NZ-QX pinout, PBSS4021NZ-QX application, or PBSS4021NZ-QX equivalent, key selection criteria include its 120–170 mV V_CEsat at 8 A/400 mA drive, qualified automotive reliability, and dual-collector SOT223 thermal layout enabling 2.6 W dissipation on ceramic PCB.

Technical Context

This discrete NPN transistor uses epitaxial planar technology optimized for low saturation voltage and high DC current gain (h_FE = 250–480 at I_C = 8 A). Its dual-collector configuration (Pins 2 & 4) enhances thermal conduction to the PCB heatsink pad, supporting stable operation up to 150 °C junction temperature.

Switching performance is characterized by 110 ns turn-on time and 605 ns turn-off time under 12.5 V/1 A test conditions, with f_T = 90 MHz confirming suitability for medium-speed power control-not RF or linear amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	20 V - Maximum safe collector-emitter blocking voltage in open-base configuration
I_C	8 A - Continuous DC collector current rating at T_amb ≤ 25 °C with adequate heatsinking
R_CEsat	14 mΩ (typ) - Low saturation resistance enables <100 mW conduction loss at 6 A
V_CEsat	120–170 mV - Confirmed saturation voltage at 8 A I_C/400 mA I_B, reducing heat generation vs. standard transistors
h_FE	250–480 - High DC current gain at I_C = 8 A supports efficient base drive design
P_tot	2.6 W - Maximum power dissipation on ceramic Al₂O₃ PCB, enabling compact thermal design
AEC-Q101	Qualified - Meets stress-test requirements for automotive discrete semiconductors

Pinout & Package

SOT223 (SC-73) plastic surface-mount package with 4 leads, 2.3 mm pitch, and integrated heatsink pad (Pins 2 & 4 both connected to collector). Dimensions: 6.5 mm × 3.5 mm × 1.65 mm body; 6.7 mm × 3.7 mm outline including leads.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring ~400 mA base current to saturate at 8 A collector load
2	Collector (C)	Main high-current output terminal; electrically tied to Pin 4 for enhanced thermal path
3	Emitter (E)	Reference node for current flow; soldered to ground plane for lowest inductance return path
4	Collector (C)	Duplicate collector terminal-must be connected to same copper pour as Pin 2 for thermal and electrical integrity

Key Features

Feature	Design Value
Low V_CEsat	120–170 mV at 8 A ensures <1.4 W conduction loss, reducing heatsink size and system energy waste
Dual-collector SOT223	Pins 2 & 4 both connect to collector, doubling thermal interface area to PCB heatsink pad
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, HTRB, and ESD testing
High h_FE at high I_C	250–480 at 8 A allows simplified base drive circuitry with lower gate-driver current demand
Small PCB footprint	6.5 mm × 3.5 mm body occupies ~40% less area than TO-220 alternatives while delivering comparable current

Applications

Automotive Loadswitch

Battery Charging Control

Use Scenario: Switching 12 V battery power to infotainment head units or ADAS sensors during ignition cycles.

IC Role / Device Role / Timing Role: NPN power switch controlling main power rail with fast turn-on (<110 ns) and low dropout voltage.

Use Value: 120–170 mV V_CEsat minimizes voltage drop and self-heating during sustained 5–8 A loads, extending component life in hot underhood environments.

Use Scenario: Regulating charge current to 12 V lead-acid or LiFePO₄ auxiliary batteries in start-stop systems.

IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element managing charge current up to 8 A with precise thermal feedback.

Use Value: Dual-collector SOT223 layout enables 2.6 W dissipation on ceramic PCB, supporting reliable operation without external heatsinks.

Motor/Fan Power Switch

Industrial Power Management

Use Scenario: Driving cooling fans or small DC motors in engine control modules or HVAC actuators.

IC Role / Device Role / Timing Role: High-current switching device handling inductive loads with built-in flyback protection compatibility.

Use Value: 20 A peak I_CM rating withstands motor startup surges; 90 MHz f_T supports clean PWM edge transitions up to 20 kHz.

Use Scenario: Managing auxiliary power rails in industrial PLC I/O modules or programmable power supplies.

IC Role / Device Role / Timing Role: Discrete power switch replacing MOSFETs in cost-sensitive 20 V/8 A applications where gate drive complexity must be minimized.

Use Value: High h_FE (250–480) reduces base drive current requirement versus standard transistors, simplifying driver IC selection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40201LT1G	20 V V_CEO, 4.5 A I_C, 25 mΩ R_CEsat, SOT23-3 package	Lower current rating and higher R_CEsat; suitable only for sub-5 A loads	Select when board space is constrained and thermal budget allows higher conduction loss
Diodes Incorporated DXTN20020CTR	20 V V_CEO, 10 A I_C, 12 mΩ R_CEsat, SOT223-4 package, AEC-Q101 qualified	Higher current capability and marginally lower R_CEsat, but requires validation of base drive compatibility	Prefer for new designs needing >8 A headroom or tighter V_CEsat tolerance

Compared with PBSS4021NZ-QX, NSS40201LT1G trades current capacity and thermal robustness for smaller footprint, while DXTN20020CTR offers higher current headroom and slightly better conduction efficiency-but demands re-evaluation of base drive network stability.

Availability

PBSS4021NZ-QX is available at Aetrix Electronics and suitable for automotive loadswitching, battery charging control, and industrial power management requiring stable component supply across production lifecycles.

Supply support for PBSS4021NZ-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-qualified components.

PBSS4021NZ-QX belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for energy-efficient power switching in space-constrained automotive and industrial systems where thermal management and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for PBSS4021NZ-QX?

The absolute maximum junction temperature (T_j) is 150 °C per IEC 60134 limiting values. Operation above this threshold risks permanent degradation. Derating curves in Figure 1 confirm 2.6 W max dissipation only at T_amb ≤ 25 °C on ceramic PCB; power must be reduced linearly as ambient rises.

Can PBSS4021NZ-QX replace a MOSFET in 12 V switching applications?

Yes-when gate drive simplicity and cost outweigh ultra-low R_DS(on) needs. Its 14 mΩ R_CEsat delivers comparable conduction loss to many 20 V MOSFETs at 6–8 A, and its bipolar architecture eliminates gate charge concerns. However, it requires ~400 mA base current versus MOSFET's voltage-driven gate.

How does the dual-collector SOT223 configuration improve thermal performance?

Pins 2 and 4 are internally connected to the collector and share the same metal slug. This doubles the thermal interface area to the PCB heatsink pad, reducing R_th(j-sp) to 11 K/W and enabling 2.6 W dissipation on ceramic substrates-versus ~1.7 W for single-collector equivalents under identical mounting conditions.

Is PBSS4021NZ-QX pin-compatible with its PNP complement PBSS4021PZ-Q?

Yes-both use identical SOT223 (SC-73) package with matching pin 1 (base), pin 2 (collector/emitter), pin 3 (emitter/collector), and pin 4 (collector/emitter) assignments. Polarity reversal is the only change; no PCB redesign is needed when implementing complementary switching stages.

PBSS4021NZ-QX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 170mV @ 400mA, 8A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 2A, 2V

Power - Max:: 770 mW

Frequency - Transition:: 95MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS4021NZ-QX FAQ

1.How can I place an order for PBSS4021NZ-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4021NZ-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4021NZ-QX reliable?

The price and inventory of PBSS4021NZ-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4021NZ-QX is usually 5 days.

3.What payment methods are accepted for PBSS4021NZ-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4021NZ-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4021NZ-QX?

PBSS4021NZ-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4021NZ-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4021NZ-QX?

For technical support, including PBSS4021NZ-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4021NZ-QX requirements.

6.How does Aetrix verify that PBSS4021NZ-QX is sourced from the original manufacturer or authorized distributors?

All PBSS4021NZ-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4021NZ-QX meets industry standards.

7.What is the process for return or replacement of PBSS4021NZ-QX?

All PBSS4021NZ-QX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4021NZ-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4021NZ-QX part is unused and in its original packaging.

Return procedure for PBSS4021NZ-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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