Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS4032NT-QR

Part No.:
PBSS4032NT-QR
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBSS4032NT-QR.pdf
Description:
TRANS NPN 30V 2.6A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,913

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS4032NT-QR from Nexperia is an AEC-Q101-qualified NPN low VCEsat BISS transistor in SOT23 package, designed for high-efficiency switching in power-constrained circuits. It delivers 30 V VCEO, 2.6 A continuous IC, 76–105 mΩ RCEsat at 2.5 A/250 mA drive, and 180 MHz fT, enabling compact DC-DC converters and battery charging paths.

For engineers reviewing the PBSS4032NT-QR datasheet, PBSS4032NT-QR pinout, PBSS4032NT-QR application, or PBSS4032NT-QR equivalent, this page provides verified electrical parameters, thermal derating behavior, switching timing (ton = 35 ns, toff = 195 ns), AEC-Q101 qualification status, and PCB footprint guidance for SOT23 layout.

Technical Context

This BISS (Breakthrough In Small Signal) transistor uses optimized epitaxial base and emitter design to achieve low saturation resistance while maintaining high hFE (300–500 at 500 mA–1 A) and fast switching (tr = 20 ns, tf = 60 ns). Its structure reduces base charge storage, minimizing storage time (ts = 135 ns) and enabling efficient PWM control in high-frequency power stages.

Thermal performance is defined across three mounting conditions: Rth(j-a) = 320 K/W on standard FR4, 190 K/W with 1 cm² collector pad, and 115 K/W on Al₂O₃ ceramic. Junction-to-solder-point resistance is fixed at 62 K/W, supporting precise thermal modeling for automotive and industrial PCBs.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - Maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in 24 V automotive and industrial power rails.
IC (continuous) 2.6 A - Continuous collector current rating at Tamb ≤ 25 °C; supports sustained load switching in portable power management ICs.
RCEsat 76–105 mΩ - Measured at IC = 2.5 A / IB = 250 mA; directly determines conduction loss (Pcond ≈ 0.5 W at 2.5 A) and thermal rise in compact layouts.
fT 180 MHz - Transition frequency at VCE = 10 V, IC = 100 mA; confirms suitability for >1 MHz switching in synchronous buck controllers.
toff 195 ns - Total turn-off time (ts + tf) under VCC = 12.5 V, IC = 1 A; enables stable operation up to ~500 kHz PWM without shoot-through risk.
AEC-Q101 Qualified - Certified for automotive discrete applications per stress test requirements; includes HTGB, HTRB, TC, AC/DC life test, and ESD (HBM ≥ 2 kV).

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package with 3 leads, 1.3 mm height, and standard 0.95 mm lead pitch. Designed for reflow soldering per JEDEC J-STD-020; footprint matches IPC-7351B SOIC-3 density.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input requiring 250 mA peak drive for full saturation at 2.5 A; low VBEsat (0.88–0.95 V) reduces driver power loss.
2 Emitter Reference node for current sensing and feedback; tied to ground or low-side shunt in buck/boost topologies.
3 Collector Main power path output; thermally coupled to PCB copper; requires ≥1 cm² pad on FR4 for 660 mW Ptot capability.

Key Features

Feature Design Value
Low VCEsat 200–280 mV at IC = 2.5 A / IB = 250 mA - Reduces conduction loss by >40% vs. standard bipolar transistors, critical for battery runtime extension.
High hFE at high IC 200–370 at IC = 2 A - Enables lower base drive current, easing gate driver selection and reducing bias network power dissipation.
Optimized switching speed ton = 35 ns, toff = 195 ns - Balances fast transition with minimal overshoot; validated with 450 Ω scope probe and defined test circuit per Fig 14.
Small PCB footprint SOT23 outline (2.9 × 1.3 × 1.1 mm) - Saves >60% board area vs. TO-92; compatible with automated pick-and-place and standard 8 mm tape/reel handling.
AEC-Q101 qualification Full stress test compliance including 1000-cycle temperature cycling (−40 °C to +125 °C) - Ensures reliability in engine bay and ADAS power modules.

Applications

Automotive DC-DC Converters USB-C Power Delivery Chargers

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and sensor modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, operating at 250–500 kHz with forced PWM mode.

Use Value: 76 mΩ RCEsat limits I²R loss to <0.5 W at 2.5 A, enabling passive cooling in sealed junction boxes.

Use Scenario: Programmable power supply (PPS) output stage regulating 3–21 V at up to 3 A for fast-charging smartphones.

IC Role / Device Role / Timing Role: High-current pass element in linear or hybrid linear-switching regulator architecture.

Use Value: 180 MHz fT and 195 ns toff support tight-loop transient response to dynamic load steps (0–3 A in <10 μs).

Industrial Battery Management Systems Portable Medical Device Power Rails

Use Scenario: Cell balancing and protection FET in 3S–4S Li-ion packs for handheld test equipment.

IC Role / Device Role / Timing Role: Discrete switch controlling charge/discharge current path with overcurrent cutoff.

Use Value: AEC-Q101 qualification ensures long-term stability under thermal cycling (−40 °C to +85 °C ambient), meeting IEC 62304 Class B requirements.

Use Scenario: Isolated auxiliary power supply for ECG front-end amplifiers and Bluetooth LE radios.

IC Role / Device Role / Timing Role: Low-noise, low-heat switch in post-regulation stage delivering clean 1.8 V/3.3 V rails.

Use Value: VCEsat ≤ 280 mV at 2.5 A minimizes self-heating (<1.5 °C/W rise), preventing thermal drift in precision analog signal chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3005LPS-7 30 V, 3.5 A, RCEsat = 45 mΩ (at 3 A), SOT23-3, no AEC-Q101 Higher current capability but unqualified for automotive; better for consumer DC-DC where cost dominates. Select when >2.6 A IC headroom is needed and AEC-Q101 is not required.
PBSS4041NT 40 V, 2.6 A, RCEsat = 110–150 mΩ (at 2.5 A), same SOT23 package, AEC-Q101 qualified Higher VCEO margin for 36 V systems, but higher saturation resistance increases conduction loss by ~40%. Select for 36 V nominal systems (e.g., commercial trucks) where voltage headroom outweighs efficiency loss.

Compared with PBSS4032NT-QR, DMT3005LPS-7 offers lower RCEsat but lacks automotive qualification, while PBSS4041NT trades 10 V higher breakdown for reduced efficiency-making PBSS4032NT-QR optimal for 24 V automotive and high-efficiency portable power where both qualification and low loss are mandatory.

Availability

PBSS4032NT-QR is available at Aetrix Electronics and suitable for automotive DC-DC converters, USB-C power delivery chargers, and industrial battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PBSS4032NT-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-performance discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.

PBSS4032NT-QR belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial applications where low VCEsat, fast switching, and AEC-Q101 compliance are essential.

FAQ

What is the maximum allowable base current for PBSS4032NT-QR?

The absolute maximum base current (IB) is 0.5 A per Table 5 of the datasheet. However, for reliable saturation at IC = 2.5 A, the recommended drive is IB = 250 mA (IC/IB = 10), yielding VCEsat ≤ 280 mV and RCEsat ≤ 105 mΩ. Exceeding 0.5 A risks bond wire failure or localized heating.

Does PBSS4032NT-QR support wave soldering?

Yes - the SOT23 package is qualified for both reflow and wave soldering per Section 11 of the datasheet. The recommended wave soldering footprint (Fig 17) specifies 1.4 mm solder lands with 2.2 mm spacing and preferred transport direction aligned to pin 1–3 axis. Preheating to 100–120 °C is advised to avoid thermal shock.

How does thermal resistance change with PCB copper area?

Rth(j-a) drops from 320 K/W (standard FR4, no extra copper) to 190 K/W with a 1 cm² collector pad, and further to 115 K/W on Al₂O₃ ceramic. This 2.8× improvement enables 660 mW continuous dissipation on FR4 vs. 390 mW on standard layout - critical for space-constrained automotive modules.

Is PBSS4032NT-QR pin-compatible with its PNP complement PBSS4032PT?

Yes - both share identical SOT23 pinning: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. However, polarity reversal means PBSS4032PT must be oriented opposite on PCB for complementary switching. Layout verification using the simplified outline in Figure 15 is required to avoid assembly errors.

PBSS4032NT-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
2.6 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 300mA, 3A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1A, 2V
Power - Max:
390 mW
Frequency - Transition:
180MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBSS4032NT-QR FAQ

1.How can I place an order for PBSS4032NT-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032NT-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032NT-QR reliable?

The price and inventory of PBSS4032NT-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032NT-QR is usually 5 days.

3.What payment methods are accepted for PBSS4032NT-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4032NT-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4032NT-QR?

PBSS4032NT-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032NT-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032NT-QR?

For technical support, including PBSS4032NT-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032NT-QR requirements.

6.How does Aetrix verify that PBSS4032NT-QR is sourced from the original manufacturer or authorized distributors?

All PBSS4032NT-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032NT-QR meets industry standards.

7.What is the process for return or replacement of PBSS4032NT-QR?

All PBSS4032NT-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032NT-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032NT-QR part is unused and in its original packaging.

Return procedure for PBSS4032NT-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS4032NT-QR Tags

  • PBSS4032NT-QR
  • PBSS4032NT-QR PDF
  • PBSS4032NT-QR Datasheet
  • PBSS4032NT-QR Specifications
  • PBSS4032NT-QR Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS4032NT-QR
  • Buy PBSS4032NT-QR
  • PBSS4032NT-QR Price
  • PBSS4032NT-QR Distributor
  • PBSS4032NT-QR Supplier
  • PBSS4032NT-QR Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER