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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4032NX,115

Name: PBSS4032NX,115
Brand: Nexperia USA Inc.
SKU: PBSS4032NX,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4032NX,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBSS4032NX,115.pdf

Description:: TRANS NPN 30V 4.7A SOT-89

Quantity:: RFQ Add To RFQ list

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Inventory:4,367

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Product details

Overview

PBSS4032NX,115 from Nexperia is an NPN low V_CE(sat) transistor in SOT89 (SC-62) package, rated for 30 V V_CEO, 4.7 A continuous collector current, and 45–62.5 mΩ R_CE(sat) at I_C = 4 A / I_B = 400 mA. It serves as a high-efficiency power switch in battery-powered motor control and charging circuits.

For engineers reviewing the PBSS4032NX,115 datasheet, PBSS4032NX,115 pinout, PBSS4032NX,115 application, or PBSS4032NX,115 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, switching time validation (t_on = 65 ns, t_off = 215 ns), and compatibility with standard SOT89 footprint and reflow profiles.

Technical Context

This device employs a planar epitaxial silicon structure optimized for low conduction loss and fast switching. Its h_FE ranges from 150–275 at I_C = 6 A, supporting robust DC gain under high-current drive conditions. The base-emitter turn-on voltage is 0.77–0.85 V at I_C = 2 A, enabling efficient drive from 3.3 V or 5 V logic.

Thermal design relies on junction-to-solder-point resistance of 20 K/W and junction-to-ambient resistance as low as 50 K/W on ceramic PCB - critical for sustained 4.7 A operation without forced cooling. Transient thermal impedance curves confirm stable pulse handling up to 10 A (1 ms pulse, 2% duty cycle).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter blocking voltage in open-base configuration
I_C	4.7 A - Continuous DC collector current rating at T_amb ≤ 25 °C on standard FR4 PCB
R_CE(sat)	45–62.5 mΩ - Confirmed saturation resistance at I_C = 4 A / I_B = 400 mA, directly reducing conduction loss and heat generation
t_on/t_off	65 ns / 215 ns - Verified turn-on and turn-off times under V_CC = 12.5 V, I_C = 1 A, enabling >1 MHz switching in PWM power stages
f_T	145 MHz - Transition frequency at V_CE = 10 V, I_C = 100 mA, confirming suitability for high-speed digital switching
P_tot (ceramic PCB)	2500 mW - Total power dissipation limit when mounted on Al₂O₃ ceramic PCB, enabling higher ambient temperature operation
h_FE	150–275 - DC current gain at I_C = 6 A, ensuring reliable saturation with moderate base drive current

Pinout & Package

SOT89 (SC-62) plastic surface-mount package: 3-lead, 1.5 mm pitch, 4.5 × 2.5 × 1.5 mm body. Collector lead is electrically and thermally connected to large central tab for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter (E)	Reference node for current flow; low-impedance path to ground or return rail in switching configurations
2	Collector (C)	Main high-current output terminal; soldered to thermal pad for PCB-level heat extraction
3	Base (B)	Control input requiring ~400 mA drive for full saturation at 4 A load; compatible with standard logic-level drivers

Key Features

Feature	Design Value
Low V_CE(sat)	200–350 mV at I_C = 4 A - Reduces power loss by >50% vs. conventional transistors, lowering thermal stress
High I_C capability	4.7 A continuous / 10 A pulsed - Supports compact designs for fan/motor drivers without external heatsinking
Optimized switching speed	t_on = 65 ns, t_off = 215 ns - Enables efficient high-frequency PWM control in portable power systems
High h_FE at high current	150–275 at I_C = 6 A - Ensures stable saturation with minimal base drive overhead, simplifying driver circuitry
Small PCB footprint	SOT89 outline (4.5 × 2.5 mm) - Saves >40% board area vs. TO-220 equivalents while maintaining thermal performance

Applications

Portable Battery Chargers

DC Motor Control

Use Scenario: Step-down DC-DC converter in USB-C PD power banks delivering up to 20 V/3 A.

IC Role / Device Role: Primary synchronous rectifier switch replacing MOSFET in cost-sensitive, space-constrained topologies.

Use Value: 45 mΩ R_CE(sat) reduces conduction loss by 32% vs. legacy transistors, extending runtime per charge cycle.

Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC fans in industrial handheld tools.

IC Role / Device Role: High-side or low-side power switch controlling bidirectional motor direction and speed via PWM.

Use Value: 215 ns t_off enables clean 20 kHz PWM without shoot-through risk, improving acoustic noise and efficiency.

USB Power Delivery Switching

LED Driver Current Regulation

Use Scenario: Load switch managing power path between battery and USB port in dual-input portable devices.

IC Role / Device Role: Low-loss pass element enabling seamless source selection with <100 mV dropout at 3 A.

Use Value: 240–340 mV V_CE(sat) at 5.4 A ensures <0.5 W dissipation, eliminating need for thermal relief copper.

Use Scenario: Constant-current sink for high-brightness LED strings in automotive interior lighting modules.

IC Role / Device Role: Precision current-regulating transistor in linear LED driver topology with analog dimming.

Use Value: Tight h_FE tolerance (±15%) and low V_BE(sat) drift ensure ±3% LED current accuracy across -40 to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40301MZ4T1G	V_CEO = 30 V, I_C = 4 A, R_CE(sat) = 55–85 mΩ - higher saturation resistance and wider tolerance band	Lower thermal efficiency in continuous 4 A loads; requires larger PCB copper area for same temperature rise	Preferred only where second-source qualification mandates ON Semi portfolio alignment
Diodes Incorporated DXTN3020P5-13	V_CEO = 30 V, I_C = 4.5 A, R_CE(sat) = 40–60 mΩ - marginally lower R_CE(sat) but no published t_off data above 100 ns	Limited documentation for high-frequency switching validation; unsuitable for >100 kHz PWM without additional characterization	Select only for static or low-frequency (<10 kHz) switching where timing specs are non-critical

Compared with NSS40301MZ4T1G and DXTN3020P5-13, PBSS4032NX,115 delivers superior thermal derating on FR4 (50 K/W vs. ≥75 K/W), verified 215 ns t_off for high-frequency PWM, and tighter R_CE(sat) distribution - making it optimal for compact, high-efficiency battery-powered systems.

Availability

PBSS4032NX,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply and long-term production continuity.

Supply support for PBSS4032NX,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade components.

PBSS4032NX,115 belongs to Nexperia's "Low V_CE(sat) Transistor" product line, engineered specifically for energy-efficient power switching in portable and space-constrained applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is 1 A per datasheet limiting values (Table 5). For reliable continuous operation at I_C = 4.7 A, Nexperia specifies I_B = 400 mA - providing sufficient overdrive for deep saturation while maintaining thermal stability on standard FR4 PCBs.

Can PBSS4032NX,115 be used in automotive applications?

No. Per Revision History (Section 14), this part was explicitly changed to non-automotive qualification in the September 2025 revision. Automotive alternatives must carry the "-Q" suffix (e.g., PBSS4032NX-Q) and undergo AEC-Q101 testing - which PBSS4032NX,115 does not.

How does thermal performance differ between FR4 and ceramic PCB mounting?

On FR4 with 6 cm² collector pad, R_th(j-a) is 75 K/W; on ceramic Al₂O₃, it improves to 50 K/W. This 33% reduction allows 2500 mW total power dissipation on ceramic vs. 1650 mW on FR4 - enabling higher ambient temperature operation or increased current density.

Is the SOT89 footprint compatible with wave soldering processes?

Yes. Figure 17 provides the dedicated wave soldering footprint with 7.6 mm length, 2.4 mm width, and 1.8 mm pad spacing. The central collector tab is designed for direct thermal contact with the wave solder bath, ensuring uniform wetting and mechanical reliability per IPC-A-610 Class 2 requirements.

PBSS4032NX,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4.7 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 340mV @ 270mA, 5.4A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2A, 2V

Power - Max:: 2.5 W

Frequency - Transition:: 145MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBSS4032NX,115 FAQ

1.How can I place an order for PBSS4032NX,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032NX,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032NX,115 reliable?

The price and inventory of PBSS4032NX,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032NX,115 is usually 5 days.

3.What payment methods are accepted for PBSS4032NX,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4032NX,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4032NX,115?

PBSS4032NX,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032NX,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032NX,115?

For technical support, including PBSS4032NX,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032NX,115 requirements.

6.How does Aetrix verify that PBSS4032NX,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4032NX,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032NX,115 meets industry standards.

7.What is the process for return or replacement of PBSS4032NX,115?

All PBSS4032NX,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032NX,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032NX,115 part is unused and in its original packaging.

Return procedure for PBSS4032NX,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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