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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4032NZ,115

Name: PBSS4032NZ,115
Brand: Nexperia USA Inc.
SKU: PBSS4032NZ,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4032NZ,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS4032NZ,115.pdf

Description:: TRANS NPN 30V 4.9A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4032NZ,115 from Nexperia is an AEC-Q101-qualified NPN low V_CEsat BISS transistor in SOT223 (SC-73) package, rated for 30 V V_CEO, 4.9 A continuous I_C, and 45–62.5 mΩ R_CEsat at I_C = 4 A / I_B = 400 mA. It delivers high h_FE (200–500) across 0.5–4 A, optimized switching times (t_on = 65 ns, t_off = 215 ns), and operates up to 150 °C junction temperature - deployed in automotive DC-DC converters and battery charging circuits.

For engineers reviewing the PBSS4032NZ,115 datasheet, PBSS4032NZ,115 pinout, PBSS4032NZ,115 application, or PBSS4032NZ,115 equivalent, key selection criteria include verified low saturation resistance, AEC-Q101 qualification status, thermal performance on FR4 vs. ceramic PCBs, and validated base drive requirements for 4 A conduction.

Technical Context

This BISS transistor uses a proprietary bipolar structure enabling lower V_CEsat than standard BJT while retaining robust SOA and high h_FE at high current. Its dual-collector (pins 2 & 4) configuration enhances thermal dissipation and current handling in medium-power switching applications.

It supports fast switching with t_d = 35 ns, t_r = 30 ns, and t_f = 65 ns under 12.5 V V_CC, 1 A I_C, and ±50 mA base drive - critical for high-frequency DC-DC topologies where conduction loss and switching loss trade-offs must be tightly balanced.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage with base open; defines maximum input/output rail separation in buck/boost stages.
I_C (continuous)	4.9 A - Continuous collector current rating at T_amb ≤25 °C on FR4 PCB; sets baseline load capability without forced cooling.
R_CEsat	45–62.5 mΩ - Confirmed saturation resistance at I_C = 4 A / I_B = 400 mA; directly determines conduction loss (P_cond ≈ I² × R).
h_FE	200–500 - DC current gain at V_CE = 2 V and I_C = 0.5–4 A; enables low base drive power and stable biasing in linear or saturated switch modes.
t_off	215 ns - Total turn-off time under defined test conditions; constrains maximum practical switching frequency in hard-switched converters.
T_j max	150 °C - Absolute maximum junction temperature; requires thermal design margin when operating at full I_C in ambient >85 °C.
AEC-Q101	Qualified - Validated for automotive-grade reliability including HTOL, TC, HTRB, and ESD per AEC standard; required for under-hood and infotainment power stages.

Pinout & Package

The PBSS4032NZ,115 is housed in a 4-pin SOT223 (SC-73) plastic surface-mount package with integrated heat sink pad. Pins 2 and 4 are internally connected to the collector terminal, enabling dual-side thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~400 mA peak drive for full 4 A saturation; connects to gate driver or MCU GPIO via current-limiting resistor.
2	Collector	Main high-current output node; electrically tied to pin 4; soldered to large copper area for thermal management.
3	Emiter	Reference node for emitter-follower or common-emitter configurations; ties to ground or low-side shunt in buck regulators.
4	Collector	Second collector terminal - redundant connection to pin 2; improves current sharing and thermal spreading on PCB.

Key Features

Feature	Design Value
Low V_CEsat	V_CEsat = 180–250 mV at I_C = 4 A / I_B = 400 mA - reduces conduction loss by >40% vs. standard BJTs, lowering thermal stress in compact layouts.
Dual-collector thermal path	Pins 2 & 4 both connect to collector - doubles effective thermal interface area, improving R_th(j-sp) to 15 K/W and enabling 1.7 W dissipation on FR4 with 6 cm² pad.
High-speed switching	t_on = 65 ns, t_off = 215 ns - supports >500 kHz switching in DC-DC controllers without excessive drive complexity or shoot-through risk.
High h_FE at high I_C	h_FE ≥200 at I_C = 4 A - ensures stable saturation with modest base current, reducing driver IC loading and PCB trace losses.
AEC-Q101 qualification	Validated per stress test standard for discrete semiconductors - confirms suitability for automotive power modules, body control units, and ADAS subsystems.

Applications

Automotive DC-DC Converters

Battery Charging Circuits

Use Scenario: Step-down conversion from 12 V or 48 V vehicle battery to 3.3 V/5 V rails for infotainment and ADAS sensors.

IC Role / Device Role / Timing Role: Main switching transistor in synchronous or quasi-resonant buck topology, operating at 250–1000 kHz.

Use Value: Low R_CEsat minimizes I²R loss at 3–5 A loads, while AEC-Q101 compliance ensures long-term reliability under thermal cycling and vibration.

Use Scenario: Constant-current/constant-voltage stage in USB-C PD or wireless charging power paths for EV accessories.

IC Role / Device Role / Timing Role: High-efficiency pass element or switching regulator transistor controlling charge current up to 4.5 A.

Use Value: Stable h_FE across temperature enables precise current regulation without feedback loop compensation drift.

Portable Power Management

Industrial SMPS Modules

Use Scenario: Load switch and power-path controller in handheld medical devices and ruggedized tablets with Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-loss ON/OFF switch managing system power sequencing and reverse-current blocking.

Use Value: 30 V V_CEO headroom accommodates battery overvoltage transients; 150 °C T_j max supports sealed enclosure operation.

Use Scenario: Primary-side switch in isolated flyback or forward converters for industrial PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Medium-power switching transistor driving transformer primary with <10 A peak current capability.

Use Value: Dual-collector layout improves thermal coupling to heatsink, maintaining <125 °C junction temp at full load without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40301MZ4T1G	Same SOT223 package, 30 V V_CEO, but higher R_CEsat (75–105 mΩ) and lower h_FE (100–250 at 4 A); no AEC-Q101 qualification.	Suitable for non-automotive industrial or consumer DC-DC where qualification is not mandated.	Select only if cost sensitivity outweighs thermal efficiency and automotive compliance requirements.
Diodes Incorporated DXTN3050PSQ-13	30 V, 5 A rating, AEC-Q101 qualified, but uses SOT89 package (single collector, lower thermal performance); R_CEsat = 55–80 mΩ.	Preferred where board space is constrained but thermal demands are moderate (<1.2 W).	Choose when footprint size is prioritized over thermal derating margin and dual-collector current sharing.

Compared with PBSS4032NZ,115, NSS40301MZ4T1G trades AEC-Q101 compliance and lower R_CEsat for lower cost, while DXTN3050PSQ-13 sacrifices thermal robustness and dual-collector layout for smaller footprint - making PBSS4032NZ,115 optimal for thermally demanding, automotive-grade medium-power switching.

Availability

PBSS4032NZ,115 is available at Aetrix Electronics and suitable for automotive DC-DC converters, battery charging circuits, and industrial power management systems requiring stable component supply, AEC-Q101 assurance, and consistent thermal performance across production batches.

Supply support for PBSS4032NZ,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with core R&D and manufacturing in Europe and Asia.

PBSS4032NZ,115 belongs to Nexperia's BISS transistor product line - engineered specifically for high-efficiency, medium-power switching in automotive and industrial power supplies where low V_CEsat, fast switching, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum continuous collector current for PBSS4032NZ,115 under standard PCB conditions?

The PBSS4032NZ,115 supports 4.9 A continuous collector current when mounted on an FR4 PCB with single-sided copper and standard footprint (R_th(j-a) = 180 K/W). Derating applies above 25 °C ambient; at 85 °C, usable I_C drops to approximately 3.2 A based on 150 °C T_j limit and thermal resistance data.

How does the dual-collector (pins 2 and 4) configuration impact PCB layout and thermal design?

Pins 2 and 4 are internally shorted to the collector, allowing simultaneous connection to two separate copper pours or a split thermal pad. This configuration reduces effective thermal resistance by up to 55% compared to single-collector SOT223 devices - enabling 1.7 W dissipation on FR4 with a 6 cm² collector pad, as confirmed in Nexperia's thermal characterization data.

Is PBSS4032NZ,115 suitable for linear regulator applications?

While PBSS4032NZ,115 can operate in linear mode, its design emphasis is on saturated switching - evidenced by low R_CEsat, fast switching times, and AEC-Q101 qualification for pulsed power. Linear use is limited by P_tot = 700 mW on standard FR4; sustained linear operation requires aggressive heatsinking and is not recommended outside brief transient clamping or biasing roles.

What base drive current is required to achieve full saturation at 4 A collector current?

To achieve V_CEsat ≤250 mV at I_C = 4 A, the datasheet specifies I_B = 400 mA. This corresponds to an h_FE of ~10, consistent with BISS device architecture. Base drive must be capable of delivering this peak current with minimal impedance; typical implementation uses a dedicated low-impedance driver stage rather than direct MCU GPIO.

PBSS4032NZ,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4.9 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 340mV @ 270mA, 5.4A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 145MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS4032NZ,115 FAQ

1.How can I place an order for PBSS4032NZ,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032NZ,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032NZ,115 reliable?

The price and inventory of PBSS4032NZ,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032NZ,115 is usually 5 days.

3.What payment methods are accepted for PBSS4032NZ,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4032NZ,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4032NZ,115?

PBSS4032NZ,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032NZ,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032NZ,115?

For technical support, including PBSS4032NZ,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032NZ,115 requirements.

6.How does Aetrix verify that PBSS4032NZ,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4032NZ,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032NZ,115 meets industry standards.

7.What is the process for return or replacement of PBSS4032NZ,115?

All PBSS4032NZ,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032NZ,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032NZ,115 part is unused and in its original packaging.

Return procedure for PBSS4032NZ,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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