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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4032PT-QR

Name: PBSS4032PT-QR
Brand: Nexperia USA Inc.
SKU: PBSS4032PT-QR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4032PT-QR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS4032PT-QR.pdf

Description:: TRANS PNP 30V 2.4A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4032PT-QR from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT23 (TO-236AB) package, designed for high-efficiency switching in power management circuits. It delivers −30 V V_CEO, −2.4 A continuous collector current, 110–165 mΩ R_CEsat at −2 A/−200 mA drive, AEC-Q101 qualification, and optimized 70 ns turn-on time - enabling compact, thermally efficient DC-DC converters and battery charging stages.

For engineers reviewing the PBSS4032PT-QR datasheet, PBSS4032PT-QR pinout, PBSS4032PT-QR application, or PBSS4032PT-QR equivalent, key selection criteria include its low saturation resistance under high-current bias, thermal performance on FR4 PCBs, automotive-grade reliability, and direct NPN complement (PBSS4032NT) for complementary switching topologies.

Technical Context

This BISS transistor employs a proprietary epitaxial structure to achieve significantly lower V_CEsat than conventional PNP transistors while maintaining high h_FE (100 min at −2 A) and fast switching (t_on = 70 ns, t_off = 185 ns). Its design targets high-current, low-voltage switching nodes where conduction loss dominates thermal budget.

The device operates with open-base V_CEO = −30 V and supports peak pulsed current up to −5 A (t_p ≤ 1 ms). Thermal resistance is specified as 320 K/W (FR4, standard footprint), 190 K/W (FR4 with 1 cm² collector pad), and 115 K/W (ceramic Al₂O₃), confirming its suitability for space-constrained, thermally demanding applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations.
I_C	−2.4 A - Continuous DC collector current rating; enables robust operation in 2 A-class power rails without derating at T_amb ≤ 25 °C.
R_CEsat	110–165 mΩ - Measured at I_C = −2 A, I_B = −200 mA; directly determines conduction loss (P_cond ≈ I_C² × R_CEsat) in saturated switching.
h_FE	100 min at I_C = −2 A - High current gain at high current ensures stable saturation with modest base drive, reducing driver circuit complexity.
t_on/t_off	70 ns / 185 ns - Fast switching times minimize transition losses in PWM-based DC-DC converters operating up to ~1 MHz.
AEC-Q101	Qualified - Certified for automotive-grade reliability including temperature cycling, HTRB, and ESD testing; suitable for under-hood and infotainment power stages.

Pinout & Package

Package: SOT23 (TO-236AB), surface-mount plastic package with 3 leads, 1.3 mm max height, standard footprint compatible with automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −200 mA drive for full saturation at −2 A collector current; low V_BEsat (−0.95 V typ) minimizes base drive power loss.
2	Emiter	Common reference node in high-side switch configuration; connected to supply rail; must be routed with low inductance to avoid switching overshoot.
3	Collector	Output current path; thermally coupled to PCB copper; mounting pad area directly impacts R_th(j-a) (190 K/W with 1 cm² pad).

Key Features

Feature	Design Value
Low V_CEsat	−220 mV typ at −2 A/−200 mA - Reduces conduction loss by >40% vs. standard PNP transistors, improving efficiency in battery-powered systems.
High I_C capability	−2.4 A continuous - Supports higher output currents in compact buck converter outputs or load switches without paralleling devices.
Optimized switching speed	t_on = 70 ns, t_off = 185 ns - Enables high-frequency operation (>500 kHz) while maintaining low transition loss in space-constrained designs.
Small PCB footprint	SOT23 package (2.9 × 1.3 × 1.0 mm) - Saves >50% board area vs. SOT223; ideal for wearables and portable medical devices.
AEC-Q101 qualification	Stress-tested per automotive discrete standard - Ensures long-term reliability in automotive body control modules and ADAS power supplies.

Applications

DC-DC Buck Converter Output Stage

Battery Charging Switch

Use Scenario: High-efficiency synchronous or pseudo-synchronous buck converter in automotive infotainment power supply.

IC Role / Device Role / Timing Role: PNP BISS transistor used as high-side switch in non-synchronous topology or as freewheeling switch in pseudo-synchronous mode.

Use Value: Low R_CEsat (110 mΩ) reduces conduction loss at 2 A load, enabling >92% efficiency at 5 V output while maintaining thermal margin on 2-layer FR4.

Use Scenario: Input protection and charge path control in USB-C PD power banks with dual-cell Li-ion batteries.

IC Role / Device Role / Timing Role: High-current PNP switch enabling/disabling charging current flow between input source and battery pack.

Use Value: −2.4 A continuous rating and AEC-Q101 qualification ensure reliable operation across −40 °C to +105 °C ambient, supporting wide-temperature battery charging.

Automotive LED Driver Current Sink

Industrial PLC Digital Output Module

Use Scenario: Constant-current sink for high-brightness automotive tail lamps driven from 12 V rail.

IC Role / Device Role / Timing Role: PNP transistor configured as emitter-follower current regulator with external sense resistor.

Use Value: High h_FE (100 min at −2 A) allows precise current control with low base drive error, minimizing LED brightness variation across temperature.

Use Scenario: 24 V DC solid-state output stage in programmable logic controller modules driving solenoids and relays.

IC Role / Device Role / Timing Role: High-reliability PNP switch providing galvanically isolated load switching with fast turn-off (185 ns t_off) for responsive actuator control.

Use Value: AEC-Q101 qualification and −30 V V_CEO support industrial surge immunity (IEC 61000-4-4/5), ensuring robust operation in factory floor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LKQ-7	−30 V V_CEO, −3.5 A I_C, 75 mΩ R_CEsat, SOT23 package, AEC-Q101 qualified	Higher current and lower R_CEsat, but larger gate charge requirement increases base drive complexity	Preferred when >2.4 A continuous current or <100 mΩ conduction loss is required; verify base driver capability for −350 mA peak IB.
MMBT3906-7-F	−40 V V_CEO, −200 mA I_C, 400 mΩ R_CEsat, SOT23, no AEC-Q101	Lower current rating, higher saturation resistance, no automotive qualification	Only suitable for low-power signal switching (<100 mA); not recommended for power management or automotive use.

Compared with DMT3005LKQ-7, PBSS4032PT-QR offers better base drive simplicity at 2.4 A loads, while MMBC3906-7-F lacks both current capability and automotive qualification - making PBSS4032PT-QR the optimal balance of performance, reliability, and drive compatibility for mid-power PNP switching.

Availability

PBSS4032PT-QR is available at Aetrix Electronics and suitable for automotive body electronics, portable battery chargers, and industrial DC-DC converters requiring stable component supply, AEC-Q101 compliance, and high-current PNP switching in SOT23 footprint.

Supply support for PBSS4032PT-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

PBSS4032PT-QR belongs to Nexperia's BISS transistor product line, engineered specifically to replace conventional PNP transistors in high-efficiency, high-reliability power switching applications where low V_CEsat and AEC-Q101 compliance are critical.

FAQ

What is the maximum allowable base current for PBSS4032PT-QR?

The absolute maximum base current is −0.5 A, per Table 5 (Limiting Values). However, typical saturation drive is −200 mA at −2 A collector current. Exceeding −0.5 A risks permanent damage to the base-emitter junction, especially under transient conditions or elevated temperature.

Can PBSS4032PT-QR be used in parallel for higher current handling?

No - PBSS4032PT-QR is not characterized for parallel operation. Its positive temperature coefficient of V_CEsat is insufficient to guarantee current sharing, and mismatched h_FE across units can cause thermal runaway. For >2.4 A, select a single higher-rated device like DMT3005LKQ-7.

How does the SOT23 package affect thermal performance in continuous operation?

On standard FR4 PCB (single-sided, tin-plated), R_th(j-a) is 320 K/W, limiting continuous power dissipation to 390 mW at 25 °C ambient. With a 1 cm² collector pad, R_th(j-a) improves to 190 K/W (660 mW dissipation), enabling sustained −2 A operation only with adequate copper area and airflow.

Is PBSS4032PT-QR pin-compatible with its NPN complement PBSS4032NT?

Yes - both share identical SOT23 (TO-236AB) pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This allows symmetrical PCB layout for complementary switching stages, though polarity reversal must be accounted for in driver circuit design and netlist routing.

PBSS4032PT-QR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2.4 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 375mV @ 10mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 390 mW

Frequency - Transition:: 160MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS4032PT-QR FAQ

1.How can I place an order for PBSS4032PT-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4032PT-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4032PT-QR reliable?

The price and inventory of PBSS4032PT-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032PT-QR is usually 5 days.

3.What payment methods are accepted for PBSS4032PT-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4032PT-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4032PT-QR?

PBSS4032PT-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4032PT-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4032PT-QR?

For technical support, including PBSS4032PT-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032PT-QR requirements.

6.How does Aetrix verify that PBSS4032PT-QR is sourced from the original manufacturer or authorized distributors?

All PBSS4032PT-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032PT-QR meets industry standards.

7.What is the process for return or replacement of PBSS4032PT-QR?

All PBSS4032PT-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032PT-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4032PT-QR part is unused and in its original packaging.

Return procedure for PBSS4032PT-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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