Nexperia USA Inc. PBSS4032PX,115
- Part No.:
- PBSS4032PX,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
PBSS4032PX,115.pdf
- Description:
- TRANS PNP 30V 4.2A SOT-89
- Quantity:
- Payment:

- Shipping:

Inventory:240
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Product details
Overview
PBSS4032PX,115 from Nexperia is a PNP low VCEsat transistor in SOT89 (SC-62) package, designed for high-efficiency power switching in compact battery-powered systems. It delivers −30 V VCEO, −4.2 A continuous collector current, 58–86 mΩ RCEsat at −4 A/−400 mA drive, and <270 mV VCEsat under same conditions - enabling minimal conduction loss in motor drivers and charging circuits.
For engineers reviewing the PBSS4032PX,115 datasheet, PBSS4032PX,115 pinout, PBSS4032PX,115 application, or PBSS4032PX,115 equivalent, key selection criteria include verified low-saturation resistance, thermal performance on FR4 PCBs, junction temperature limits up to 150 °C, and compatibility with standard SOT89 reflow footprints per Fig. 16.
Technical Context
This PNP transistor uses epitaxial planar die construction optimized for low saturation voltage and fast switching. Its DC current gain (hFE) ranges 60–100 at −4 A, supporting robust base drive efficiency while maintaining stable gain across −55 °C to +150 °C ambient.
Thermal design is defined by three mounting configurations: Rth(j-a) = 210 K/W (standard FR4), 75 K/W (FR4 with 6 cm² collector pad), and 50 K/W (ceramic Al₂O₃). Transient thermal impedance curves (Figs. 2–4) confirm suitability for pulsed loads with duty cycles down to 1% and pulse widths ≤1 ms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −30 V - Maximum safe collector-emitter blocking voltage with base open; defines off-state voltage rating in high-side switch topologies. |
| IC | −4.2 A - Continuous DC collector current capability at Tamb ≤ 25 °C; sets steady-state load handling capacity in power switches. |
| RCEsat | 58–86 mΩ - Measured at −4 A/−400 mA, pulsed; directly determines I²R conduction loss and thermal rise in high-current paths. |
| VCEsat | ≤270 mV - Max saturation voltage at −4 A/−400 mA; enables <1.1 W dissipation at full current, reducing heatsink requirements. |
| fT | 115 MHz - Transition frequency at −10 V VCE, −100 mA IC; supports clean switching in PWM frequencies up to ~10 MHz with margin. |
| toff | 220 ns - Turn-off time under −12.5 V VCC, −1 A IC, ±50 mA base drive; ensures sub-500 kHz switching with low dead-time overhead. |
| Ptot | 2.5 W - Max power dissipation on ceramic PCB (Al₂O₃); establishes absolute thermal ceiling for sustained operation without forced cooling. |
Pinout & Package
The PBSS4032PX,115 is housed in a medium-power SOT89 (SC-62) surface-mount plastic package measuring 4.5 mm × 2.5 mm × 1.5 mm, with 1.5 mm lead pitch and integrated heat-dissipating tab on pin 2 (collector).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (E) | Current exit node for PNP operation; connects to system ground or low-side return path in high-side switch configurations. |
| 2 | Collector (C) | Main power output terminal; electrically and thermally connected to large copper pad for heat transfer; must be routed with ≥6 cm² copper on FR4 for rated 4.2 A. |
| 3 | Base (B) | Control input requiring −400 mA peak drive for full saturation; polarity-sensitive - negative bias turns device ON in PNP configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | ≤270 mV at −4 A/−400 mA enables >98% efficiency in 5 V load switches and reduces thermal stress vs. conventional transistors. |
| High hFE | 60–100 at −4 A allows reduced base drive current and smaller driver circuitry - critical for space-constrained portable designs. |
| Optimized switching speed | 220 ns toff and 90 ns ton support efficient PWM control in battery chargers and fan drivers up to 500 kHz. |
| Thermal robustness | Rth(j-sp) = 20 K/W to solder point ensures rapid heat extraction through PCB copper, improving reliability in sealed enclosures. |
| Small PCB footprint | SOT89 package occupies ~11.25 mm² board area - 40% less than TO-220 equivalents - enabling denser power stage layouts. |
Applications
| Battery-Powered Motor Control | USB-C Power Delivery Switching |
|---|---|
|
Use Scenario: Driving small DC motors (e.g., cooling fans, vibration motors) in wearables and handheld tools powered by single-cell Li-ion batteries. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor supply rail; operates in DC or low-frequency PWM mode (<10 kHz). Use Value: Low 270 mV VCEsat minimizes voltage drop across the switch, preserving battery runtime and reducing self-heating during continuous 2–3 A loads. |
Use Scenario: Enabling/disabling 5 V/3 A USB-C power paths in portable power banks and docking stations. IC Role / Device Role / Timing Role: Load switch for VBUS path control; activated only during connection negotiation and power delivery handshaking. Use Value: 58 mΩ RCEsat limits insertion loss to <170 mW at 3 A, avoiding thermal throttling and ensuring stable 5 V output under full load. |
| Smartphone Charging Circuitry | Industrial Sensor Node Power Management |
|
Use Scenario: Reverse-polarity protection and battery isolation in linear charger IC auxiliary paths (e.g., backup battery switchover). IC Role / Device Role / Timing Role: PNP-based ideal diode replacement; conducts only when VIN > VBAT + VBE, blocking reverse current. Use Value: Sub-1 V VBEsat (≤1.1 V) and high hFE ensure reliable turn-on with minimal forward drop - extending usable battery voltage range by ~300 mV. |
Use Scenario: Power gating of RF transceivers and ADC subsystems in battery-operated environmental sensors deployed in remote locations. IC Role / Device Role / Timing Role: Low-quiescent current enable switch; remains OFF for >99% of duty cycle, activated only during measurement bursts. Use Value: <100 nA ICBO and ICES prevent leakage-induced battery drain over multi-year deployments - critical for 10+ year field life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40301MZ4T1G | −30 V VCEO, −3.5 A IC, 100 mΩ RCEsat at −3 A/−300 mA - higher saturation resistance and lower current rating. | Less suitable for 4 A continuous loads; acceptable only in derated 2.5–3 A applications with larger thermal margin. | Select only if SOT-23 footprint required; not recommended for SOT89-replacement due to 2× higher conduction loss. |
| Diodes Incorporated DXT3011PZ-13 | −30 V VCEO, −4.5 A IC, 65 mΩ RCEsat at −4 A/−400 mA - slightly higher RCEsat but wider operating temperature range (−65 °C to +175 °C). | Better suited for extended industrial environments; identical SOT89 pinout and footprint compatibility. | Preferred for harsh-temperature deployments where junction limit exceeds 150 °C; otherwise functionally interchangeable with minor efficiency trade-off. |
Compared with PBSS4032PX,115, NSS40301MZ4T1G offers smaller package but sacrifices 17% current capacity and doubles conduction loss, while DXT3011PZ-13 matches current rating and pinout but trades 7 mΩ higher RCEsat for extended thermal survivability beyond 150 °C.
Availability
PBSS4032PX,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply with guaranteed long-term manufacturability and consistent parametric performance.
Supply support for PBSS4032PX,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, bipolar transistors, and ESD protection.
The PBSS4032PX,115 belongs to Nexperia's "Low VCEsat Bipolar Transistor" product line, engineered specifically for energy-efficient power switching in space-constrained consumer and industrial equipment where thermal density and conduction loss are primary constraints.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum base current (IB) is −1 A per datasheet Table 5. However, for reliable continuous operation at −4.2 A collector current, the recommended base drive is −400 mA (IC/IB = 10.5), as validated in RCEsat and VCEsat test conditions. Exceeding −400 mA does not improve saturation but increases driver losses and thermal stress on the base region.
Can PBSS4032PX,115 be used in high-side switch configurations with 12 V supply?
Yes - its −30 V VCEO rating provides 18 V margin above 12 V rails, and its PNP structure inherently supports high-side switching. Ensure base drive can sink sufficient current (≥−400 mA) and that emitter is tied to 12 V, collector to load, and load return to ground. Thermal design must accommodate Ptot derating above 25 °C ambient.
How does thermal performance differ between FR4 and ceramic PCB mounting?
On standard FR4 with tin-plated copper, Rth(j-a) is 210 K/W; adding a 6 cm² collector pad improves it to 75 K/W. On ceramic Al₂O₃, it reaches 50 K/W. This means at 2 W dissipation, junction-to-ambient temperature rise drops from 420 °C (not sustainable) to 150 °C (FR4 + pad) to 100 °C (ceramic), directly enabling higher continuous current in thermally constrained layouts.
Is PBSS4032PX,115 qualified for automotive applications?
No - per Section 14 revision history, this part was explicitly changed to non-automotive qualification in the September 2025 datasheet revision. Automotive alternatives (e.g., PBSS4032PX-Q) are available from Nexperia but require separate part numbers and qualification documentation. Use outside automotive contexts only unless formally approved per customer-specific AEC-Q101 testing.
PBSS4032PX,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 4.2 A
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 200mA, 4A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 2A, 2V
- Power - Max:
- 2.5 W
- Frequency - Transition:
- 115MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89
PBSS4032PX,115 FAQ
1.How can I place an order for PBSS4032PX,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4032PX,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4032PX,115 reliable?
The price and inventory of PBSS4032PX,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4032PX,115 is usually 5 days.
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5.How can I obtain technical support or documentation for PBSS4032PX,115?
For technical support, including PBSS4032PX,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4032PX,115 requirements.
6.How does Aetrix verify that PBSS4032PX,115 is sourced from the original manufacturer or authorized distributors?
All PBSS4032PX,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4032PX,115 meets industry standards.
7.What is the process for return or replacement of PBSS4032PX,115?
All PBSS4032PX,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4032PX,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4032PX,115 part is unused and in its original packaging.
Return procedure for PBSS4032PX,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS4032PX,115 Tags

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Diodes Incorporated

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Nexperia USA Inc.

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