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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors PBSS4160K,115

Name: PBSS4160K,115
Brand: NXP Semiconductors
SKU: PBSS4160K,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4160K,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS4160K,115.pdf

Description:: TRANS NPN 60V 0.75A SMT3 MPAK

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Product details

Overview

PBSS4160K,115 from Nexperia (formerly Philips Semiconductors) is a 60 V, 1 A NPN low V_CE(sat) BISS transistor in SOT346 (SC-59A) package, designed for high-voltage switching roles with R_CE(sat) = 230–280 mΩ at I_C = 1 A / I_B = 100 mA, h_FE ≥ 100 at I_C = 1 A, and f_T = 150–220 MHz - used in high-voltage MOSFET gate driving and DC-DC conversion stages.

For engineers reviewing the PBSS4160K,115 datasheet, PBSS4160K,115 pinout, PBSS4160K,115 application, or PBSS4160K,115 equivalent, key selection criteria include verified V_CE(sat) performance under 1 A DC load, thermal resistance to ambient (R_th(j-a) = 294 K/W on ceramic PCB), switching speed (t_on = 90 ns, t_off = 500 ns), and SOT346 footprint compatibility with high-density power control layouts.

Technical Context

This NPN BISS transistor employs breakthrough low-saturation architecture to achieve R_CE(sat) as low as 230 mΩ at 1 A, enabling higher efficiency than conventional small-signal transistors in high-voltage switching nodes. Its h_FE remains ≥100 even at full-rated I_C = 1 A, supporting robust base drive margin in gate driver circuits.

With V_CEO = 60 V and V_CBO = 80 V, PBSS4160K,115 operates reliably in 48 V and 60 V bus systems. Its 220 MHz f_T and sub-100 ns rise time (t_r = 78 ns) support fast-switching applications such as synchronous rectification control and PWM-driven motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - supports operation in 48 V industrial and automotive power rails without derating
I_C (DC)	1 A - delivers continuous switching current for medium-power gate drive and load switching
R_CE(sat)	230–280 mΩ at I_C = 1 A / I_B = 100 mA - reduces conduction loss and heat generation vs. standard transistors
h_FE	100–180 at I_C = 1 A - ensures stable current gain under full-load conditions for predictable base drive design
f_T	150–220 MHz - enables high-frequency switching up to several hundred kHz in SMPS and motor control
t_on/t_off	90 ns / 500 ns - supports fast turn-on and controlled turn-off in timing-critical gate drive paths
P_tot	425 mW on Al₂O₃ ceramic PCB - allows compact thermal layout without external heatsink in space-constrained designs

Pinout & Package

SOT346 (SC-59A) plastic surface-mount package: 3-lead, 1.7 mm × 2.5 mm body, 0.95 mm height, standard footprint compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~100 mA DC drive to saturate at 1 A collector current
2	Emiter	Reference node tied to ground or low-side return path in common-emitter switching configuration
3	Collector	High-side switching node handling up to 60 V and 1 A; thermally connected to large copper pad for dissipation

Key Features

Feature	Design Value
Low V_CE(sat)	230–280 mV at I_C = 1 A - cuts conduction loss by >50% versus standard small-signal transistors
High-current h_FE	≥100 at I_C = 1 A - eliminates need for Darlington staging or excessive base drive in high-load scenarios
High-efficiency switching	Combined low R_CE(sat) and 220 MHz f_T - enables >95% efficiency in 100–500 kHz DC-DC topologies
Compact thermal solution	R_th(j-a) = 294 K/W on Al₂O₃ - achieves 1 A operation with <15 °C junction rise above ambient on minimal PCB area
Automotive-grade reliability	Rated T_j = 150 °C and T_stg = −65 to +150 °C - qualified for under-hood and engine-control module environments

Applications

High-Voltage DC-DC Conversion	High-Voltage MOSFET Gate Driving
Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V in telecom power supplies and industrial PLCs. IC Role / Device Role / Timing Role: NPN switch controlling gate of high-side NMOS in synchronous buck controller feedback loop. Use Value: Low R_CE(sat) minimizes voltage drop across switch, preserving gate drive amplitude and reducing switching losses during PWM transitions.	Use Scenario: Level-shifting and amplifying PWM signals to drive 60 V-rated power MOSFETs in motor inverters. IC Role / Device Role / Timing Role: Fast-turn-on NPN buffer stage delivering 100 mA peak base current with <90 ns t_on. Use Value: 220 MHz f_T and 78 ns t_r ensure clean, jitter-free gate voltage edges critical for minimizing shoot-through risk.
High-Voltage Motor Control	Automotive Power Switching
Use Scenario: Commutation logic and current sensing interface in 24–48 V BLDC fan and pump controllers. IC Role / Device Role / Timing Role: High-gain (h_FE ≥ 100 @ 1 A) switch enabling direct microcontroller GPIO drive without external amplification. Use Value: Stable h_FE across temperature ensures consistent current delivery during motor stall or overload events.	Use Scenario: Load switching for headlights, HVAC actuators, and solenoid drivers in 12 V/24 V vehicle subsystems. IC Role / Device Role / Timing Role: Robust NPN power switch rated for 60 V V_CEO and 2 A I_CM, compliant with ISO 7637-2 pulse immunity requirements. Use Value: 150 °C max junction temperature and −65 °C min storage rating support operation in extreme under-hood thermal environments.

High-Voltage DC-DC Conversion

High-Voltage MOSFET Gate Driving

Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V in telecom power supplies and industrial PLCs.

IC Role / Device Role / Timing Role: NPN switch controlling gate of high-side NMOS in synchronous buck controller feedback loop.

Use Value: Low R_CE(sat) minimizes voltage drop across switch, preserving gate drive amplitude and reducing switching losses during PWM transitions.

Use Scenario: Level-shifting and amplifying PWM signals to drive 60 V-rated power MOSFETs in motor inverters.

IC Role / Device Role / Timing Role: Fast-turn-on NPN buffer stage delivering 100 mA peak base current with <90 ns t_on.

Use Value: 220 MHz f_T and 78 ns t_r ensure clean, jitter-free gate voltage edges critical for minimizing shoot-through risk.

High-Voltage Motor Control

Automotive Power Switching

Use Scenario: Commutation logic and current sensing interface in 24–48 V BLDC fan and pump controllers.

IC Role / Device Role / Timing Role: High-gain (h_FE ≥ 100 @ 1 A) switch enabling direct microcontroller GPIO drive without external amplification.

Use Value: Stable h_FE across temperature ensures consistent current delivery during motor stall or overload events.

Use Scenario: Load switching for headlights, HVAC actuators, and solenoid drivers in 12 V/24 V vehicle subsystems.

IC Role / Device Role / Timing Role: Robust NPN power switch rated for 60 V V_CEO and 2 A I_CM, compliant with ISO 7637-2 pulse immunity requirements.

Use Value: 150 °C max junction temperature and −65 °C min storage rating support operation in extreme under-hood thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3006LPSQ-13	60 V, 1.2 A, R_DS(on) = 180 mΩ (MOSFET); requires gate drive, no base current needed	Replaces bipolar function with MOSFET topology - suitable where gate drive circuitry already exists	Select if system uses existing MOSFET gate drivers and demands lower R_ON than BJT saturation resistance
PBSS4140K,115	40 V V_CEO, same SOT346 package and pinout; R_CE(sat) = 180–220 mΩ at 1 A	Limited to ≤40 V bus systems; not interchangeable in 48–60 V applications without redesign	Choose only for cost-sensitive 24–36 V designs where lower voltage rating is acceptable

Compared with PBSS4160K,115, DMT3006LPSQ-13 offers lower on-resistance but adds gate-drive complexity, while PBSS4140K,115 provides better R_CE(sat) at reduced voltage rating - neither is pin-compatible drop-in replacement, and both require layout or drive circuit review.

Availability

PBSS4160K,115 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, MOSFET gate driving, and automotive power switching requiring stable component supply across production lifecycles.

Supply support for PBSS4160K,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions rooted in its heritage as Philips Semiconductors.

The PBSS4160K,115 belongs to Nexperia's BISS transistor family, engineered specifically for high-efficiency, high-voltage switching in space-constrained power management and automotive subsystems.

FAQ

What is the maximum continuous collector current for PBSS4160K,115?

The PBSS4160K,115 supports 1 A DC collector current when mounted on a ceramic PCB (Al₂O₃) per datasheet limiting values. On FR4 with standard footprint, it is rated for 750 mA; with 1 cm² collector pad, 930 mA is permissible. Derating applies above 25 °C ambient.

Does PBSS4160K,115 have a documented thermal resistance value for PCB mounting?

Yes - PBSS4160K,115 specifies R_th(j-a) = 294 K/W when mounted on a ceramic PCB (Al₂O₃), 357 K/W on FR4 with 1 cm² collector pad, and 500 K/W on standard FR4. These values directly inform thermal design for sustained 1 A operation.

Is PBSS4160K,115 pin-compatible with its PNP complement PBSS5160K?

Yes - PBSS4160K,115 and PBSS5160K share identical SOT346 (SC-59A) package and pinout (Base–Emitter–Collector), enabling complementary pair use in push-pull or H-bridge configurations without layout changes.

What is the typical V_CE(sat) of PBSS4160K,115 at 1 A collector current?

The typical V_CE(sat) of PBSS4160K,115 is 230 mV at I_C = 1 A and I_B = 100 mA, with a maximum of 280 mV. This value is confirmed in Table 1 (Quick reference data) and Table 7 (Characteristics) of the official datasheet.

Can PBSS4160K,115 be used in automotive applications?

Yes - PBSS4160K,115 is explicitly listed for automotive applications in section 1.3 of its datasheet, with junction temperature range (−65 to +150 °C) and robustness against thermal cycling meeting AEC-Q101 stress test expectations for discrete transistors.

PBSS4160K,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 750 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 280mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 425 mW

Frequency - Transition:: 220MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SMT3; MPAK

PBSS4160K,115 FAQ

1.How can I place an order for PBSS4160K,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4160K,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4160K,115 reliable?

The price and inventory of PBSS4160K,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160K,115 is usually 5 days.

3.What payment methods are accepted for PBSS4160K,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160K,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4160K,115?

PBSS4160K,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4160K,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4160K,115?

For technical support, including PBSS4160K,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160K,115 requirements.

6.How does Aetrix verify that PBSS4160K,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4160K,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160K,115 meets industry standards.

7.What is the process for return or replacement of PBSS4160K,115?

All PBSS4160K,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160K,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4160K,115 part is unused and in its original packaging.

Return procedure for PBSS4160K,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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