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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4160QA-QZ

Name: PBSS4160QA-QZ
Brand: Nexperia USA Inc.
SKU: PBSS4160QA-QZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4160QA-QZ

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-XDFN Exposed Pad

Datasheet:: PBSS4160QA-QZ.pdf

Description:: TRANS NPN 60V 1A DFN1010D-3

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Product details

Overview

PBSS4160QA-Q from Nexperia is an AEC-Q101-qualified NPN low V_CEsat transistor in DFN1010D-3 (SOT1215) package, rated for 60 V V_CEO, 1 A continuous collector current, and 170–235 mΩ R_CEsat at I_C = 1 A / I_B = 0.1 A. It serves as a high-efficiency load switch in automotive power management circuits where thermal performance and PCB space are constrained.

For engineers reviewing the PBSS4160QA-Q datasheet, PBSS4160QA-Q pinout, PBSS4160QA-Q application, or PBSS4160QA-Q equivalent, this device is selected for low-loss switching in battery-powered motor drivers, charging control paths, and compact DC-DC load switches requiring <245 mV V_CEsat and side-wettable flanks for automated optical inspection.

Technical Context

This NPN transistor uses epitaxial planar die construction with optimized emitter-base geometry to achieve high h_FE (85–130 at I_C = 1 A) while maintaining ultra-low saturation resistance. Its DFN1010D-3 package integrates solderable side pads for enhanced thermal conduction and IPC-compliant reflow compatibility.

The device operates within −55 °C to 150 °C junction temperature range and supports peak pulsed currents up to 1.5 A (t_p ≤ 1 ms). Its switching parameters-t_on = 100 ns, t_off = 670 ns, f_T = 120–180 MHz-are specified under standardized test conditions (V_CC = 10 V, I_C = 0.5 A, I_Bon/I_Boff = ±25 mA).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe blocking voltage across collector-emitter with base open; enables use in 48 V automotive subsystems.
I_C (continuous)	1 A - Continuous DC collector current rating at T_amb ≤ 25 °C on standard FR4; defines steady-state load capacity.
R_CEsat	170–235 mΩ - Measured at I_C = 1 A / I_B = 0.1 A; directly determines conduction loss (P_loss = I_C² × R_CEsat) in saturated switching.
h_FE	85–130 - DC current gain at V_CE = 2 V, I_C = 1 A; ensures reliable saturation with modest base drive (e.g., 10 mA base for 1 A collector).
t_off	670 ns - Turn-off time under V_CC = 10 V, I_C = 0.5 A, I_Boff = −25 mA; critical for PWM frequency selection in power regulation.
Package	DFN1010D-3 (SOT1215) - 1.1 mm × 1.0 mm × 0.37 mm leadless thermally enhanced package with side-wettable flanks for AOI and thermal reliability.

Pinout & Package

DFN1010D-3 (SOT1215) is a 3-terminal, leadless, surface-mount plastic package with visible and solderable side pads. Its ultra-thin profile (0.37 mm height) and 0.75 mm pitch support high-density automotive PCB layouts and automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input node; requires ≥50 mA peak drive for full saturation at 1 A collector current.
2	Emitter (E)	Reference terminal for base-emitter bias and current return path; connected to system ground or low-side reference.
3 & 4	Collector (C)	Power output node; pins 3 and 4 are internally joined and serve as parallel collector terminals to reduce bond wire inductance and improve thermal spreading.

Key Features

Feature	Design Value
AEC-Q101 qualification	Qualified per Automotive Electronics Council stress test standard; validated for under-hood temperature cycling, humidity, and mechanical shock.
Low R_CEsat	170–235 mΩ at I_C = 1 A / I_B = 0.1 A reduces conduction loss by >40% vs. standard NPN transistors in same package.
Solderable side pads	Enables automated optical inspection (AOI) of solder joints and improves thermal transfer to PCB copper planes via side-wettable flanks.
High h_FE at high I_C	85–130 at I_C = 1 A allows efficient base drive with minimal gate driver overhead in discrete switch designs.
Thermal robustness	R_th(j-a) = 125 K/W on 4-layer FR4 with 1 cm² collector pad - enables 1 A operation without external heatsink in ambient ≤ 85 °C.

Applications

Automotive Load Switch

USB-C Power Delivery Switch

Use Scenario: Controlling power to infotainment display backlight or HVAC fan in 12 V/48 V vehicle architectures.

IC Role / Device Role / Timing Role: NPN low-side switch enabling ON/OFF control with <245 mV dropout and <670 ns turn-off for responsive load sequencing.

Use Value: Eliminates need for external heat sink due to 125 K/W thermal resistance on 4-layer board, reducing BOM count and assembly cost.

Use Scenario: Enabling/disabling VBUS path in portable USB-C accessories with strict 1 A current limit and thermal constraints.

IC Role / Device Role / Timing Role: High-gain, low-V_CEsat discrete switch replacing MOSFETs where gate drive voltage margin is limited.

Use Value: Achieves 170 mΩ effective on-resistance with 0.1 A base drive - avoids level-shifting circuitry required for logic-level MOSFETs.

Battery Protection Circuit

Industrial Sensor Power Gate

Use Scenario: Isolating Li-ion battery pack from charging circuit during overvoltage or thermal fault conditions.

IC Role / Device Role / Timing Role: Fast-turn-off (670 ns) NPN switch in series with charge path, controlled by protection IC comparator output.

Use Value: Sub-1 µs switching enables precise fault response before cell damage occurs; qualified for automotive-grade reliability.

Use Scenario: Power gating 3.3 V supply to MEMS pressure sensor in programmable logic controller modules.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch with <100 nA I_CES ensuring zero-load sleep state leakage.

Use Value: 100 nA collector-emitter cutoff current extends battery life in always-on industrial monitoring nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201LT1G	60 V V_CEO, 1.2 A I_C, R_CEsat = 220–300 mΩ; SOT-723 package (1.2 × 0.8 mm), no side-wettable flanks.	Lacks AEC-Q101 qualification; suitable for industrial but not automotive deployment.	Select when cost sensitivity outweighs automotive qualification and AOI requirements.
Diodes Incorporated DXT75100Q-7	60 V V_CEO, 1 A I_C, R_CEsat = 190–260 mΩ; DFN1010D-3 package, AEC-Q101 qualified, but h_FE = 60–100 at I_C = 1 A.	Lower current gain increases required base drive current, raising MCU GPIO loading.	Select when footprint compatibility is mandatory and base drive capability exceeds 100 mA peak.

Compared with PBSS4160QA-Q, NSS12201LT1G trades automotive qualification and AOI support for lower unit cost in non-automotive settings, while DXT75100Q-7 matches the package and qualification but demands higher base current due to reduced h_FE, impacting drive-stage design.

Availability

PBSS4160QA-Q is available at Aetrix Electronics and suitable for automotive load switching, USB-C power delivery control, and battery protection circuits requiring stable component supply, AEC-Q101 compliance, and ultra-small-footprint thermal performance.

Supply support for PBSS4160QA-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBSS4160QA-Q belongs to Nexperia's Automotive-qualified Low V_CEsat Transistor product line, engineered specifically for energy-efficient, space-constrained power switching in 12 V and 48 V vehicle subsystems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current (I_B) is 0.3 A per datasheet limiting values. For continuous 1 A collector operation, recommended base drive is 50–100 mA to ensure deep saturation while staying within thermal limits. Exceeding 0.3 A risks metallization failure even with short pulses.

Can PBSS4160QA-Q be used in high-frequency PWM applications above 100 kHz?

Yes - its 670 ns turn-off time and 120–180 MHz f_T support PWM frequencies up to 500 kHz in low-duty-cycle switching. However, thermal derating must be applied: at 1 A continuous, power dissipation rises with frequency due to switching losses, requiring PCB copper area ≥1 cm² for collector pad.

Is the DFN1010D-3 package compatible with standard reflow profiles?

Yes - Nexperia specifies JEDEC J-STD-020-compliant reflow for DFN1010D-3. Peak temperature must not exceed 260 °C, with time above 217 °C limited to 60–150 seconds. The side-wettable flanks require stencil aperture design matching Figure 19 in the datasheet for reliable solder joint formation.

How does R_CEsat vary with temperature and current?

R_CEsat increases with junction temperature: typical value rises from 170 mΩ at 25 °C to ~260 mΩ at 125 °C (per Fig. 14). At fixed temperature, it decreases with higher I_C/I_B ratio - e.g., 190 mΩ at I_C/I_B = 50 vs. 235 mΩ at I_C/I_B = 10 - due to improved carrier injection efficiency.

PBSS4160QA-QZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 235mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 230 @ 100mA, 2V

Power - Max:: 325 mW

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1010D-3

PBSS4160QA-QZ FAQ

1.How can I place an order for PBSS4160QA-QZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4160QA-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4160QA-QZ reliable?

The price and inventory of PBSS4160QA-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160QA-QZ is usually 5 days.

3.What payment methods are accepted for PBSS4160QA-QZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160QA-QZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4160QA-QZ?

PBSS4160QA-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4160QA-QZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4160QA-QZ?

For technical support, including PBSS4160QA-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160QA-QZ requirements.

6.How does Aetrix verify that PBSS4160QA-QZ is sourced from the original manufacturer or authorized distributors?

All PBSS4160QA-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160QA-QZ meets industry standards.

7.What is the process for return or replacement of PBSS4160QA-QZ?

All PBSS4160QA-QZ units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160QA-QZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4160QA-QZ part is unused and in its original packaging.

Return procedure for PBSS4160QA-QZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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