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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4160T,215

Name: PBSS4160T,215
Brand: Nexperia USA Inc.
SKU: PBSS4160T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4160T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS4160T,215.pdf

Description:: TRANS NPN 60V 1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4160T,215 from Nexperia is an NPN low V_CE(sat) BISS transistor in SOT23 package, rated for 60 V V_CEO, 1 A continuous collector current, and 200–250 mΩ R_CE(sat) at I_C = 1 A / I_B = 100 mA. It serves as a high-efficiency switching element in DC-DC converters, supply-line switches, and inductive load drivers (e.g., relays, buzzers) where low conduction loss and compact footprint are critical.

For engineers reviewing the PBSS4160T,215 datasheet, PBSS4160T,215 pinout, PBSS4160T,215 application, or PBSS4160T,215 equivalent, key selection criteria include verified V_CE(sat) ≤ 250 mV at 1 A, thermal resistance of 312 K/W on FR4 with 1 cm² collector pad, SOT23 pin compatibility, and suitability for 42 V automotive power rails and telecom infrastructure switching.

Technical Context

This BISS (Bipolar Integrated Schottky) transistor integrates a Schottky-clamped base-emitter structure to suppress saturation delay and reduce V_CE(sat). Its h_FE ranges from 100–150 at I_C = 1 A, enabling robust current gain under high-current pulsed operation (tp ≤ 300 µs, duty ≤ 0.02).

Designed for surface-mount use on standard FR4 PCBs, it delivers 1.25 W pulsed power dissipation with junction temperature limited to 150 °C. Thermal performance is validated for two mounting conditions: standard footprint (R_th(j-a) = 465 K/W) and enhanced 1 cm² collector pad (R_th(j-a) = 312 K/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe blocking voltage across collector-emitter with base open; supports 42 V automotive systems with margin.
I_C	1 A continuous - Rated DC collector current; enables direct drive of medium-power loads without external heat sinking.
R_CE(sat)	200–250 mΩ - On-resistance at I_C = 1 A / I_B = 100 mA; reduces conduction loss to ≤250 mW at full load.
h_FE	100–150 - DC current gain at I_C = 1 A; ensures stable base drive requirements for predictable switching.
f_T	150–220 MHz - Transition frequency at V_CE = 10 V / I_C = 50 mA; supports fast switching in DC-DC applications up to ~1 MHz.
V_BE(sat)	0.95–1.1 V - Base-emitter saturation voltage at I_C = 1 A / I_B = 50 mA; defines minimum driver voltage headroom needed.
P_tot	1.25 W pulsed - Max power dissipation under short pulses (tp ≤ 10 ms, δ ≤ 0.02); enables high peak-load capability.

Pinout & Package

The PBSS4160T,215 is housed in a standard SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pin pitch), optimized for automated assembly and thermal performance on FR4 PCBs with tin-plated copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Control input terminal; requires ≥100 mA base drive to achieve specified R_CE(sat) at 1 A collector current.
2 (E)	Emitter	Reference node for current flow; internally connected to substrate; must be routed with low-inductance path in switching designs.
3 (C)	Collector	Main current-carrying terminal; electrically and thermally coupled to large PCB copper area (1 cm² recommended) for thermal management.

Key Features

Feature	Design Value
Low V_CE(sat)	200–250 mV at I_C = 1 A - Minimizes power loss and self-heating during conduction, improving system efficiency.
High I_C capability	1 A continuous / 2 A pulsed - Supports direct switching of lamps, relays, and small motors without external current amplification.
SOT23 footprint	Standard 3-pin, 1.9 mm pitch - Enables drop-in replacement in space-constrained designs and compatibility with existing reflow profiles.
BISS architecture	Integrated Schottky clamp - Reduces storage time and improves turn-off speed versus conventional bipolar transistors.
Thermal derating support	R_th(j-a) = 312 K/W with 1 cm² collector pad - Allows sustained 1 A operation at ambient temperatures up to +85 °C in typical industrial layouts.

Applications

DC-DC Converter Switch

Supply Line Switch

Use Scenario: Used as the main power switch in non-isolated buck regulators delivering 3.3 V/1 A from a 12–42 V input rail.

IC Role / Device Role / Timing Role: Primary switching transistor controlling energy transfer into output inductor; operates at 500 kHz with <300 µs pulse width.

Use Value: Low R_CE(sat) limits conduction loss to <250 mW, reducing thermal stress and eliminating need for heatsink in compact modules.

Use Scenario: Enables/disables 24 V power distribution to peripheral subsystems (e.g., sensors, displays) in telecom base station shelves.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by microcontroller GPIO; handles inrush and steady-state current.

Use Value: 2 A pulsed rating accommodates capacitor charging surges; low V_CE(sat) prevents voltage droop during sustained 1 A load.

Inductive Load Driver

LED/Lamp Driver

Use Scenario: Drives 12 V automotive relays and 5 V buzzer coils in body control modules.

IC Role / Device Role / Timing Role: Saturated switch providing full coil current; includes flyback diode protection externally.

Use Value: Fast turn-off due to BISS structure minimizes relay release delay; 60 V V_CEO withstands >100 V inductive kickback.

Use Scenario: Powers LED arrays or incandescent lamps in industrial HMI panels from 5–24 V supplies.

IC Role / Device Role / Timing Role: Constant-current or on/off switch; biased in saturation for minimal forward voltage drop.

Use Value: 1 A rating supports multi-LED strings; low V_BE(sat) simplifies base drive design with 3.3 V logic controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	N-channel MOSFET (20 V V_DS, 4.5 A I_D, 16 mΩ R_DS(on)) - lower on-resistance but lower voltage rating.	Requires gate drive ≥4.5 V; unsuitable for >20 V rails; better for low-voltage, high-current digital loads.	Select when operating below 12 V and needing sub-50 mΩ conduction; avoid for 42 V automotive or 24 V telecom inputs.
PBSS4240T,215	NPN BISS transistor (40 V V_CEO, 2 A I_C, 120 mΩ R_CE(sat)) - higher current, lower voltage rating.	Same SOT23 package and pinout; optimized for 12–24 V systems requiring >1 A continuous current.	Choose for higher current density where 40 V blocking suffices; not suitable for 42 V automotive or 60 V transient-tolerant designs.

Compared with DMN2016LFG-7 and PBSS4240T,215, the PBSS4160T,215 uniquely balances 60 V blocking, 1 A capability, and BISS-speed switching in SOT23-making it optimal for 24–42 V industrial and telecom switching where MOSFET gate drive complexity or lower-voltage limitations are unacceptable.

Availability

PBSS4160T,215 is available at Aetrix Electronics and suitable for DC-DC conversion, supply line switching, and inductive load driving requiring stable component supply across automotive 42 V power, telecom infrastructure, and industrial control programs.

Supply support for PBSS4160T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The PBSS4160T,215 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, low-footprint switching in power management and load-driving applications across industrial, telecom, and non-automotive automotive systems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current (I_B) is 300 mA per datasheet limiting values. However, for reliable continuous 1 A collector operation, the recommended base drive is 100 mA (I_C/I_B = 10), ensuring V_CE(sat) remains within 200–250 mV while avoiding thermal overstress at the base-emitter junction.

Can PBSS4160T,215 replace a standard general-purpose NPN transistor like BC817 in existing designs?

Yes, with design validation: PBSS4160T,215 shares SOT23 pinout (B-E-C) and offers superior V_CE(sat) (250 mV vs. ~500 mV for BC817 at 100 mA), but requires higher base current (100 mA vs. 5 mA) to achieve its rated performance. Layout must accommodate increased base drive capability and thermal pad for collector.

Is this device qualified for automotive applications?

No. Per Nexperia's revision history (v.3, April 2023), PBSS4160T,215 is explicitly marked "non-automotive" and lacks AEC-Q101 qualification. For automotive use, select the -Q qualified variant (e.g., PBSS4160T-Q) or consult Nexperia's automotive-grade BISS portfolio.

How does the 1 cm² collector pad affect thermal performance in practice?

Mounting the collector pad on a 1 cm² FR4 copper area reduces R_th(j-a) from 465 K/W (standard footprint) to 312 K/W - a 33% improvement. At 1 A and 250 mV V_CE(sat), this lowers junction temperature rise from ~116 °C to ~78 °C, enabling reliable operation at +85 °C ambient without forced cooling.

PBSS4160T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 400 mW

Frequency - Transition:: 220MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS4160T,215 FAQ

1.How can I place an order for PBSS4160T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4160T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4160T,215 reliable?

The price and inventory of PBSS4160T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160T,215 is usually 5 days.

3.What payment methods are accepted for PBSS4160T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4160T,215?

PBSS4160T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4160T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4160T,215?

For technical support, including PBSS4160T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160T,215 requirements.

6.How does Aetrix verify that PBSS4160T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS4160T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160T,215 meets industry standards.

7.What is the process for return or replacement of PBSS4160T,215?

All PBSS4160T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4160T,215 part is unused and in its original packaging.

Return procedure for PBSS4160T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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