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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4160T-QR

Name: PBSS4160T-QR
Brand: Nexperia USA Inc.
SKU: PBSS4160T-QR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4160T-QR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS4160T-QR.pdf

Description:: TRANS NPN 60V 0.9A TO-236AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,730

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Product details

Overview

PBSS4160T-QR from Nexperia is a 60 V, 1 A NPN low-V_CEsat (BISS) transistor in SOT23 package, designed as a high-efficiency switching device for automotive 42 V power systems, DC-DC converters, and inductive load drivers. It delivers R_CEsat = 200–250 mΩ at I_C = 1 A / I_B = 100 mA and is qualified to AEC-Q101.

For engineers reviewing the PBSS4160T-QR datasheet, PBSS4160T-QR pinout, PBSS4160T-QR application, or PBSS4160T-QR equivalent, key selection criteria include V_CE(max) = 60 V, I_C(cont) = 1 A, V_CEsat ≤ 250 mV, thermal resistance R_th(j-a) = 312 K/W (with 1 cm² collector pad), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This BISS (Buried Inner Silicon Structure) NPN transistor uses an optimized epitaxial layer and emitter geometry to achieve low saturation voltage while maintaining high current gain (h_FE = 100–150 at I_C = 1 A). Its structure enables stable operation up to T_j = 150 °C with minimal thermal runaway risk.

The device operates with base-driven switching logic, requiring I_B = 100 mA for full saturation at I_C = 1 A (I_C/I_B = 10), and supports pulsed peak currents up to 2 A (t_p = 1 ms). It exhibits f_T = 150–220 MHz, confirming suitability for medium-speed switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe collector-emitter voltage under open-base condition; defines use in 42 V automotive systems with margin.
I_C (continuous)	1 A - Continuous collector current rating on FR4 PCB with 1 cm² collector pad; sets thermal design baseline.
V_CEsat	200–250 mV @ I_C = 1 A, I_B = 100 mA - Low conduction loss enabling >95% efficiency in low-voltage switching stages.
R_CEsat	200–250 mΩ - Equivalent on-resistance simplifies loss modeling in PWM-driven loads like relays and LEDs.
h_FE	100–150 @ I_C = 1 A - Sufficient DC gain to ensure robust saturation with moderate base drive, reducing driver complexity.
f_T	150–220 MHz - Supports switching frequencies up to ~10 MHz in non-critical timing applications (e.g., lamp dimming).
T_j(max)	150 °C - Junction temperature limit aligned with AEC-Q101 stress testing; enables operation in engine bay environments.

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch), qualified per AEC-Q101, with tin-plated terminations and standard reflow footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 - B	Base	Control input requiring ~100 mA drive for full saturation; connects to microcontroller GPIO or dedicated driver stage.
2 - E	Emitter	Reference node tied to system ground or low-side return path; forms common emitter configuration with collector output.
3 - C	Collector	High-current switched output; must be routed over ≥1 cm² copper area on FR4 to maintain P_tot = 1.25 W and R_th(j-a) = 312 K/W.

Key Features

Feature	Design Value
Low V_CEsat	200–250 mV enables <100 mW conduction loss at 1 A, reducing heatsink requirements in space-constrained modules.
AEC-Q101 qualification	Validated for automotive applications including 42 V power distribution, meeting stress test requirements for temperature cycling, HTRB, and ESD.
High I_CM	2 A peak (1 ms pulse) supports inrush current handling for relay coils and motor windings without secondary protection.
Optimized thermal performance	R_th(j-a) = 312 K/W with 1 cm² collector pad allows sustained 1 A operation at +85 °C ambient without derating.
BISS process technology	Enhanced carrier injection and reduced base resistance yield higher h_FE and lower saturation voltage vs. standard bipolar transistors.

Applications

Automotive 42 V Power Distribution

DC-DC Converter Primary Switch

Use Scenario: High-side or low-side switching in 42 V battery-fed subsystems (e.g., HVAC actuators, ADAS sensors).

IC Role / Device Role / Timing Role: Discrete NPN switch controlling power delivery to 42 V loads; operates in linear or saturated mode depending on control strategy.

Use Value: 60 V V_CEO provides 18 V margin above nominal 42 V rail, while low V_CEsat minimizes voltage drop and self-heating during continuous duty cycles.

Use Scenario: Low-side synchronous rectifier or main switch in buck/boost converters for infotainment or body control modules.

IC Role / Device Role / Timing Role: Fast-switching power transistor driven by PWM controller; handles 1 A average output current with pulsed peaks up to 2 A.

Use Value: f_T > 150 MHz and low storage time enable clean turn-off at 500 kHz–1 MHz, reducing switching losses and EMI generation.

Inductive Load Driver (Relays/Buzzers)

LED/Lamp Driver in Low-Voltage Systems

Use Scenario: Driving 12 V or 24 V electromagnetic relays and piezoelectric buzzers in industrial control panels and vehicle door modules.

IC Role / Device Role / Timing Role: Saturated switch providing controlled current to inductive coil; requires flyback diode integration or external clamping.

Use Value: I_CM = 2 A accommodates relay coil inrush (typically 3–5× steady-state current), while R_CEsat < 250 mΩ limits contact voltage drop and improves release timing.

Use Scenario: Constant-current dimming or on/off control of automotive interior lamps, status LEDs, and dashboard indicators.

IC Role / Device Role / Timing Role: Low-side current sink regulating LED string current via base-controlled saturation; compatible with 3.3 V or 5 V MCU outputs.

Use Value: V_BEsat = 0.95–1.1 V ensures reliable turn-on with standard logic-level drive, and low V_CEsat preserves forward voltage headroom for multi-LED strings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201LT1G	V_CEO = 60 V, I_C = 1.2 A, V_CEsat = 220–300 mV @ I_C = 1 A, not AEC-Q101 qualified	Lacks automotive qualification; suitable for industrial telecom but not safety-critical vehicle systems	Select when AEC-Q101 is not required and higher I_C margin is prioritized over thermal resistance.
Diodes Incorporated DXT7010Q-7	V_CEO = 60 V, I_C = 1 A, V_CEsat = 250–350 mV @ I_C = 1 A, AEC-Q101 qualified, SOT23-3L	Higher V_CEsat increases conduction loss by ~20%; identical package and pinout	Choose when supply chain diversification is needed and 50 mV higher saturation voltage is acceptable in thermal budget.

Compared with NSS12201LT1G and DXT7010Q-7, PBSS4160T-QR offers the lowest V_CEsat (200–250 mV) among AEC-Q101-qualified SOT23 NPN transistors, delivering superior thermal performance and efficiency in automotive 42 V power switching where junction temperature and board area are constrained.

Availability

PBSS4160T-QR is available at Aetrix Electronics and suitable for automotive 42 V power distribution, DC-DC converter primary switching, and inductive load driving requiring stable component supply across production lifecycles.

Supply support for PBSS4160T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

PBSS4160T-QR belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in automotive and industrial power management where low saturation voltage and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous collector current for PBSS4160T-QR under standard PCB conditions?

The PBSS4160T-QR supports 1 A continuous collector current when mounted on an FR4 PCB with a 1 cm² tin-plated copper pad for the collector terminal. This rating assumes ambient temperature ≤25 °C and accounts for thermal resistance of 312 K/W. Derating is required above 25 °C per the published power derating curve.

Is PBSS4160T-QR suitable for high-frequency switching applications like Class-D audio or SMPS?

PBSS4160T-QR has an f_T of 150–220 MHz and fast switching characteristics, making it viable for SMPS operating up to ~1 MHz. However, its BISS architecture prioritizes low V_CEsat over ultra-fast recovery; for >2 MHz or zero-voltage-switching topologies, dedicated MOSFETs or RF-optimized transistors are recommended.

Does PBSS4160T-QR require a base resistor when driven directly from a 3.3 V MCU GPIO?

Yes - a base resistor is required to limit I_B to ≤100 mA for reliable saturation. With V_BEsat ≈ 1.0 V and typical MCU V_OH = 3.3 V, a 22 Ω resistor yields ~105 mA base current. Lower values risk exceeding I_B(max) = 300 mA; higher values may cause incomplete saturation and increased power loss.

How does the AEC-Q101 qualification impact the use of PBSS4160T-QR in non-automotive applications?

AEC-Q101 qualification confirms extended reliability under automotive stress conditions (e.g., -40 °C to +125 °C operation, 1000-cycle temperature cycling, HTRB). In industrial or telecom applications, this translates to longer field lifetime, improved robustness against thermal shock, and reduced infant mortality - though no additional functional benefit beyond proven ruggedness.

PBSS4160T-QR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 900 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 1mA, 5V

Power - Max:: 270 mW

Frequency - Transition:: 220MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS4160T-QR FAQ

1.How can I place an order for PBSS4160T-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4160T-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4160T-QR reliable?

The price and inventory of PBSS4160T-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160T-QR is usually 5 days.

3.What payment methods are accepted for PBSS4160T-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160T-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4160T-QR?

PBSS4160T-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4160T-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4160T-QR?

For technical support, including PBSS4160T-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160T-QR requirements.

6.How does Aetrix verify that PBSS4160T-QR is sourced from the original manufacturer or authorized distributors?

All PBSS4160T-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160T-QR meets industry standards.

7.What is the process for return or replacement of PBSS4160T-QR?

All PBSS4160T-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160T-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4160T-QR part is unused and in its original packaging.

Return procedure for PBSS4160T-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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