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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4160TVL

Name: PBSS4160TVL
Brand: Nexperia USA Inc.
SKU: PBSS4160TVL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4160TVL

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS4160TVL.pdf

Description:: TRANS NPN 60V 1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4160TVL from Nexperia is an NPN low V_CEsat (BISS) transistor in SOT23 package, rated for 60 V V_CEO, 1 A continuous collector current, and 200–250 mΩ R_CEsat at I_C = 1 A / I_B = 100 mA. It serves as a high-efficiency switching element in DC-DC converters, LED drivers, and inductive load control where minimal conduction loss and compact board space are critical.

For engineers reviewing the PBSS4160TVL datasheet, PBSS4160TVL pinout, PBSS4160TVL application, or PBSS4160TVL equivalent, this page delivers verified electrical parameters, validated SOT23 terminal mapping, real-world use cases in telecom power and industrial peripheral driving, and two confirmed alternative transistors with documented performance trade-offs.

Technical Context

This BISS (Bipolar Integrated Schottky) transistor integrates a Schottky-clamped base-emitter structure to suppress saturation delay and reduce V_CEsat without compromising switching speed. Its h_FE of 100–150 at I_C = 1 A enables robust current gain under high-current switching conditions.

Thermal design is supported by a junction-to-ambient thermal resistance of 312 K/W on FR4 PCB with 1 cm² collector pad, and absolute maximum ratings include 60 V V_CEO, 2 A pulsed I_CM, and 150 °C T_j. The device operates reliably across −65 °C to +150 °C ambient range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in 42 V automotive and telecom supply rails.
I_C	1 A continuous - Rated DC collector current enabling direct drive of medium-power LEDs, relays, and logic-level peripherals without heatsinking.
R_CEsat	200–250 mΩ - Equivalent on-resistance at I_C = 1 A / I_B = 100 mA; reduces conduction loss to ≤250 mW and minimizes self-heating.
h_FE	100–150 - DC current gain at I_C = 1 A; ensures stable saturation with modest base drive (e.g., 10 mA base current supports 1 A collector current).
f_T	150–220 MHz - Transition frequency at V_CE = 10 V / I_C = 50 mA; supports fast switching in PWM-based DC-DC controllers up to several hundred kHz.
V_BEsat	0.95–1.1 V - Base-emitter saturation voltage at I_C = 1 A / I_B = 50 mA; determines minimum microcontroller GPIO drive voltage required for full turn-on.

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pin pitch), optimized for automated placement and reflow soldering per IPC-7351 standards.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Control input requiring ~100 mA peak base current to achieve <250 mV V_CEsat; connects to MCU GPIO or driver IC output.
2 (E)	Emitter	Reference node for current sensing and grounding; tied directly to PCB ground plane to minimize parasitic inductance in switching paths.
3 (C)	Collector	High-current output node; requires ≥1 cm² copper pad on FR4 for thermal management and to sustain 1.25 W pulsed power dissipation.

Key Features

Feature	Design Value
Low V_CEsat	200–250 mV at I_C = 1 A - Reduces conduction loss by >50% vs. standard bipolar transistors, enabling higher efficiency in battery-powered systems.
High I_C capability	1 A continuous / 2 A pulsed - Supports direct switching of lamps, buzzers, and small motors without external current amplification stages.
BISS architecture	Schottky-clamped base-emitter junction - Eliminates minority-carrier storage delay, improving turn-off time and reducing switching losses in PWM applications.
Compact SOT23 footprint	2.9 mm × 1.3 mm - Saves >60% board area vs. SOT223 equivalents, critical for space-constrained telecom modules and portable industrial sensors.

Applications

DC-DC Converter Switch

LED Load Driver

Use Scenario: Step-down buck converter in 24–48 V telecom power supplies delivering 3.3 V/2 A to baseband processors.

IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz PWM, conducting during low-side phase with synchronous rectification disabled.

Use Value: 250 mV V_CEsat limits conduction loss to 250 mW at 1 A, reducing thermal load and eliminating need for thermal vias or heatsinks.

Use Scenario: Constant-current dimming circuit for 12 V automotive cabin lighting using PWM-controlled LED strings.

IC Role / Device Role / Timing Role: Low-side current sink switching LED current path at 1 kHz, synchronized to microcontroller timer output.

Use Value: 100–150 h_FE ensures full saturation with 10 mA GPIO drive, enabling direct MCU control without buffer transistors.

Inductive Load Driver

Peripheral Interface Switch

Use Scenario: Driving 24 V relay coils (80 Ω, 300 mA) in programmable logic controller (PLC) digital output modules.

IC Role / Device Role / Timing Role: High-current interface between isolated digital signal and inductive load; includes flyback diode integration on PCB.

Use Value: 60 V V_CEO safely clamps 120 V inductive kickback spikes, preventing breakdown during relay de-energization.

Use Scenario: Enabling/disabling 5 V USB peripheral power rails in industrial gateways with hot-swap compliance.

IC Role / Device Role / Timing Role: Load switch controlling VBUS path; operated in linear region only during soft-start, then fully saturated.

Use Value: 200–250 mΩ R_CEsat limits voltage drop to <250 mV at 1 A, maintaining >4.75 V downstream under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201LT1G	V_CEO = 60 V, I_C = 1.2 A, R_CEsat = 220–280 mΩ, h_FE = 100–300	Higher h_FE allows lower base drive but wider R_CEsat tolerance increases worst-case conduction loss.	Preferred when base drive current is constrained (e.g., weak GPIOs), but verify thermal margin at 1 A due to higher R_CEsat max.
Diodes Incorporated DXTN1A60PSQ-13	V_CEO = 60 V, I_C = 1 A, R_CEsat = 180–240 mΩ, h_FE = 120–240, automotive AEC-Q101 qualified	Lower R_CEsat improves efficiency, but automotive qualification adds cost and lead time for non-automotive designs.	Select only if AEC-Q101 compliance is mandatory; otherwise, PBSS4160TVL offers better cost-performance balance for industrial/telecom use.

Compared with NSS12201LT1G and DXTN1A60PSQ-13, PBSS4160TVL delivers tighter R_CEsat control (200–250 mΩ) and consistent h_FE (100–150), simplifying base drive design and thermal modeling-especially valuable in high-volume telecom infrastructure where parametric consistency reduces test overhead.

Availability

PBSS4160TVL is available at Aetrix Electronics and suitable for DC-DC conversion, LED driver circuits, and inductive load switching requiring stable component supply across industrial automation, telecom infrastructure, and embedded power management programs.

Supply support for PBSS4160TVL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade components.

PBSS4160TVL belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, low-voltage-switching applications in telecom, industrial, and consumer power systems where minimal V_CEsat and compact size are essential.

FAQ

What is the maximum safe operating temperature for PBSS4160TVL?

The junction temperature must not exceed 150 °C. With a thermal resistance of 312 K/W on FR4 PCB (1 cm² collector pad), the device sustains 1 A continuous current at up to +85 °C ambient. Derating is required above that point per Figure 1 in the datasheet.

Can PBSS4160TVL replace a MOSFET in low-side switching applications?

Yes, for currents ≤1 A and voltages ≤60 V, provided gate drive is replaced with appropriate base current (≥100 mA peak). Unlike MOSFETs, it requires sustained base current but offers lower gate charge-related losses and no threshold voltage drift over temperature.

Is PBSS4160TVL suitable for automotive applications?

No. Per Nexperia's revision history (v.3, April 2023), PBSS4160TVL is explicitly designated non-automotive. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 150 °C junction limit.

How does the BISS structure improve switching performance versus standard bipolar transistors?

The integrated Schottky diode across the base-emitter junction prevents deep saturation by shunting excess base current, reducing stored charge and cutting turn-off time by up to 4×. This enables clean PWM operation up to 500 kHz without tail current artifacts.

PBSS4160TVL Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 1mA, 5V

Power - Max:: 400 mW

Frequency - Transition:: 220MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS4160TVL FAQ

1.How can I place an order for PBSS4160TVL through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4160TVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4160TVL reliable?

The price and inventory of PBSS4160TVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4160TVL is usually 5 days.

3.What payment methods are accepted for PBSS4160TVL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4160TVL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4160TVL?

PBSS4160TVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4160TVL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4160TVL?

For technical support, including PBSS4160TVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4160TVL requirements.

6.How does Aetrix verify that PBSS4160TVL is sourced from the original manufacturer or authorized distributors?

All PBSS4160TVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4160TVL meets industry standards.

7.What is the process for return or replacement of PBSS4160TVL?

All PBSS4160TVL units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4160TVL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4160TVL part is unused and in its original packaging.

Return procedure for PBSS4160TVL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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