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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS4230QAZ

Name: PBSS4230QAZ
Brand: Nexperia USA Inc.
SKU: PBSS4230QAZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS4230QAZ

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-XDFN Exposed Pad

Datasheet:: PBSS4230QAZ.pdf

Description:: TRANS NPN 30V 2A DFN1010D-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS4230QAZ from Nexperia is an AEC-Q101-qualified NPN low V_CEsat BISS transistor in DFN1010D-3 (SOT1215) package, rated for 30 V V_CEO, 2 A continuous I_C, and 135–180 mΩ R_CEsat at I_C = 1 A / I_B = 100 mA. It delivers high h_FE (100–160) at 2 A and supports fast switching (t_on = 45 ns, t_off = 490 ns), enabling compact, thermally efficient load switching in automotive power management circuits.

For engineers reviewing the PBSS4230QAZ datasheet, PBSS4230QAZ pinout, PBSS4230QAZ application, or PBSS4230QAZ equivalent, this page provides verified pin functions, thermal derating curves, AEC-Q101 qualification status, R_CEsat-based conduction loss data, and direct alternatives with documented V_CEsat and package compatibility.

Technical Context

This BISS transistor uses a breakthrough low-saturation architecture optimized for high-current, low-voltage switching where minimal conduction loss and thermal footprint are critical. Its DFN1010D-3 package integrates solderable side pads and a thermally enhanced collector pad, enabling 740 mW power dissipation on 6 cm² single-layer FR4 PCBs.

It operates across –55 °C to 150 °C junction temperature, with V_BEsat of 1.05–1.2 V at I_C = 2 A / I_B = 200 mA and f_T of 130–190 MHz - confirming suitability for medium-speed digital switching rather than RF or linear amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe blocking voltage between collector and emitter with base open; defines maximum supply rail compatibility.
I_C (continuous)	2 A - Continuous DC collector current rating; sets baseline load-switching capacity without forced cooling.
R_CEsat	135–180 mΩ - Measured collector-emitter resistance at I_C = 1 A / I_B = 100 mA; directly determines conduction loss (P = I²R) and board-level thermal design.
h_FE	100–160 - DC current gain at I_C = 2 A / V_CE = 2 V; confirms sufficient gain to drive with modest base current in saturated switch mode.
t_off	490 ns - Turn-off time under V_CC = 10 V, I_C = 0.5 A, I_Boff = –25 mA; enables PWM operation up to ~200 kHz with controlled switching loss.
AEC-Q101 qualified	Qualified per Automotive Electronics Council stress test standard - validates reliability for under-hood and body-control module applications.
Package	DFN1010D-3 (SOT1215) - 1.05 × 1.05 mm ultra-small leadless package with solderable side pads; reduces PCB area by >50% vs. SOT23.

Pinout & Package

DFN1010D-3 (SOT1215) is a 3-terminal, leadless, thermally enhanced surface-mount plastic package with visible and solderable side pads. The exposed collector pad (Pin 3 & 4) provides low thermal resistance to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input node; requires ≥100 mA base drive for full saturation at 2 A collector current.
2	Emiter (E)	Reference node for base drive and current return path; connected to system ground or low-side reference.
3 & 4	Collector (C)	Power output terminal; dual pins share current and provide low-inductance, high-thermal-conductivity connection to PCB copper pour.

Key Features

Feature	Design Value
Ultra-low R_CEsat	135–180 mΩ enables <180 mW conduction loss at 1 A - reducing heatsink need and improving battery runtime in portable systems.
Solderable side pads	Enables visual IPC-compliant solder joint inspection and improves mechanical reliability vs. bottom-only thermal pads.
High h_FE at high I_C	100–160 at 2 A allows use of smaller base drive circuitry - lowering gate driver IC cost or enabling direct MCU GPIO drive with series resistor.
Thermal enhancement	125 K/W R_th(j-a) on 4-layer FR4 with 1 cm² collector pad - supports higher sustained current in space-constrained automotive modules.
AEC-Q101 qualification	Validated for automotive temperature cycling, humidity, and ESD stress - eliminates requalification effort for body electronics and ADAS power stages.

Applications

Automotive Body Control Module

USB-C Power Delivery Load Switch

Use Scenario: Controlling 12 V accessory loads (e.g., interior lighting, window lift motors) in vehicle door modules.

IC Role / Device Role / Timing Role: Low-side NPN switch driven by microcontroller GPIO; handles 1.5 A pulsed motor startup current.

Use Value: 135 mΩ R_CEsat limits voltage drop to <200 mV at 1.5 A - preserving headroom for downstream logic and minimizing thermal rise in sealed enclosures.

Use Scenario: Enabling/disabling 5 V/3 A USB-C power path in portable docking stations.

IC Role / Device Role / Timing Role: High-efficiency load switch replacing discrete MOSFET + driver; driven by USB PD controller's enable signal.

Use Value: 45 ns t_on/490 ns t_off supports clean hot-plug sequencing without bus glitching; DFN1010D-3 footprint saves >0.8 mm² vs. SOT23.

Smartphone Battery Protection Circuit

Industrial Sensor Node Power Gating

Use Scenario: Isolating backup battery from main PMIC during fault conditions in premium smartphones.

IC Role / Device Role / Timing Role: Secondary protection switch activated by fuel gauge IC upon overcurrent detection.

Use Value: AEC-Q101 qualification ensures robustness against thermal cycling and vibration - critical for long-term field reliability in handheld devices.

Use Scenario: Power-gating LoRaWAN sensor nodes during sleep mode to extend 10-year battery life.

IC Role / Device Role / Timing Role: Low-leakage (100 nA I_CES) NPN switch disconnecting 3.3 V rail from non-critical peripherals.

Use Value: 100 nA cutoff current minimizes standby drain - contributing <0.1 µA to total sleep current budget in ultra-low-power designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40201MR6T1G	V_CEO = 40 V, R_CEsat = 190–250 mΩ at I_C = 1 A, SOT-723 package (smaller footprint but no side pads).	Higher voltage margin but 40% higher conduction loss; lacks AEC-Q101 qualification.	Select when 40 V blocking is required and automotive qualification is not mandatory.
Diodes Incorporated DXT7050Z-7	V_CEO = 30 V, R_CEsat = 150–210 mΩ at I_C = 1 A, SOT-323 package with standard gull-wing leads.	Larger 2.1 × 1.3 mm footprint; lower thermal performance (R_th(j-a) ≈ 300 K/W on FR4).	Select when hand-soldering or legacy reflow profiles require gull-wing leads instead of DFN.

Compared with PBSS4230QAZ, NSS40201MR6T1G trades AEC-Q101 compliance and lower R_CEsat for higher voltage rating, while DXT7050Z-7 sacrifices thermal efficiency and miniaturization for manufacturability with conventional SMT processes.

Availability

PBSS4230QAZ is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery load switching, smartphone battery protection circuits, and industrial sensor node power gating requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PBSS4230QAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including logic, discretes, MOSFETs, and bipolar transistors - with manufacturing rooted in process technology leadership and automotive-grade quality systems.

PBSS4230QAZ belongs to Nexperia's BISS (Breakthrough In Small Signal) transistor family, engineered specifically for space-constrained, thermally demanding load-switching applications in automotive and portable electronics where low V_CEsat and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (I_B) is 0.3 A per datasheet limiting values. For reliable 2 A collector current switching, 100 mA base drive is typical; exceeding 200 mA is only permitted in pulsed conditions (tp ≤ 1 ms) to avoid bond wire overheating and long-term parameter drift.

Can PBSS4230QAZ be used in high-frequency switching above 1 MHz?

No - its f_T of 130–190 MHz and 490 ns turn-off time limit practical PWM operation to ≤200 kHz. At 1 MHz, switching losses dominate and V_CEsat increases significantly due to insufficient minority carrier sweep-out; it is not designed for RF or Class-E topologies.

How does the DFN1010D-3 package affect thermal design compared to SOT23?

DFN1010D-3 achieves 125 K/W R_th(j-a) on 4-layer FR4 with 1 cm² collector pad - 2.4× better than typical SOT23 (≈300 K/W). This allows 2 A continuous current with no heatsink, whereas SOT23 would require derating to ≤0.8 A or external copper thermal vias.

Is there a PNP counterpart with matching specifications?

Yes - PBSS5230QA is the designated PNP complement: same DFN1010D-3 package, 30 V V_CEO, 2 A I_C, 135–180 mΩ R_CEsat, AEC-Q101 qualified, and matched thermal characteristics - enabling balanced complementary switching in H-bridge or dual-rail power stages.

PBSS4230QAZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 190mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 2V

Power - Max:: 325 mW

Frequency - Transition:: 190MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1010D-3

PBSS4230QAZ FAQ

1.How can I place an order for PBSS4230QAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4230QAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4230QAZ reliable?

The price and inventory of PBSS4230QAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4230QAZ is usually 5 days.

3.What payment methods are accepted for PBSS4230QAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4230QAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4230QAZ?

PBSS4230QAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4230QAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4230QAZ?

For technical support, including PBSS4230QAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4230QAZ requirements.

6.How does Aetrix verify that PBSS4230QAZ is sourced from the original manufacturer or authorized distributors?

All PBSS4230QAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4230QAZ meets industry standards.

7.What is the process for return or replacement of PBSS4230QAZ?

All PBSS4230QAZ units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4230QAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4230QAZ part is unused and in its original packaging.

Return procedure for PBSS4230QAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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