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Nexperia USA Inc. PBSS4240T-QR

Part No.:
PBSS4240T-QR
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBSS4240T-QR.pdf
Description:
TRANS NPN 40V 2A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,912

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Product details

Overview

PBSS4240T-QR from Nexperia is a 40 V, 2 A NPN low-VCE(sat) transistor in SOT23 package, designed for high-efficiency switching in automotive power rails and battery management systems. It delivers RCE(sat) as low as 140 mΩ at IC = 500 mA / IB = 50 mA, supports 3 A peak current, and is AEC-Q101 qualified for under-hood use.

For engineers reviewing the PBSS4240T-QR datasheet, PBSS4240T-QR pinout, PBSS4240T-QR application, or PBSS4240T-QR equivalent, key selection criteria include verified VCE(sat) ≤ 320 mV at 2 A, thermal resistance of 260 K/W with enhanced pad layout, and SOT23-compatible footprint for space-constrained DC/DC converter and motor driver PCBs.

Technical Context

This NPN transistor operates as a low-loss switch in linear and saturated modes, with guaranteed hFE of 150–250 at IC = 2 A and VCE = 2 V. Its 40 V VCEO rating enables use in 24 V automotive supply lines and 12 V battery-backed systems without derating.

Thermal performance is defined for two mounting conditions: 417 K/W (standard FR4) and 260 K/W (1 cm² collector pad), directly linking package layout to safe continuous IC capability. The device exhibits fT = 100–230 MHz and Cc = 15–20 pF, supporting fast switching in strobe flash and PWM-driven lamp drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 V - Maximum blocking voltage in open-base configuration; supports 24 V automotive systems with 67 % safety margin.
IC 2 A continuous - Sustained collector current at Tamb ≤ 25 °C with standard PCB layout; defines steady-state load drive capacity.
VCE(sat) 130–320 mV - Measured at IC = 1–2 A / IB = 15–200 mA; determines conduction loss and self-heating in switching applications.
RCE(sat) 140–200 mΩ - Derived saturation resistance at IC = 500 mA; enables precise power loss calculation in battery-fed circuits.
hFE 150–250 - DC current gain at IC = 2 A; ensures reliable base drive sizing for low-power control ICs.
fT 100–230 MHz - Transition frequency at VCE = 10 V / IC = 100 mA; confirms suitability for >100 kHz PWM switching.
Tj max 150 °C - Maximum junction temperature; sets thermal design boundary for enclosure and airflow requirements.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, single-sided copper FR4 mounting.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input requiring ≥50 mA drive for full saturation at 2 A; connects to MCU GPIO or dedicated driver stage.
2 Emitter (E) Reference node for load-side switching; must be tied to system ground or low-side return path with minimal trace inductance.
3 Collector (C) High-current output terminal; thermally coupled to PCB copper pour per Fig. 2 footprint for 260 K/W Rth(j-a).

Key Features

Feature Design Value
Low VCE(sat) ≤320 mV at 2 A enables <1 W conduction loss in 24 V motor drivers, reducing heatsink need by >40 % vs. standard transistors.
AEC-Q101 qualification Stress-tested per automotive discrete standard; validated for 15-year service life in engine control, body electronics, and ADAS power stages.
High ICM 3 A peak current supports short-duration inrush (e.g., lamp cold-start, solenoid pull-in) without second breakdown.
Optimized thermal resistance 260 K/W with 1 cm² collector pad allows 1.5× higher continuous current than standard SOT23 layouts in battery management modules.
Robust VEBO 5 V emitter-base rating permits direct interface with 3.3 V/5 V logic without level-shifting, simplifying gate-drive circuitry.

Applications

Supply Line Switching Battery Management

Use Scenario: Hot-swap protection and reverse-polarity blocking in 24 V vehicle accessory ports.

IC Role / Device Role / Timing Role: Low-side switch controlling power delivery path between battery and downstream ECU.

Use Value: 140 mΩ RCE(sat) limits voltage drop to <70 mV at 500 mA, preserving USB-C PD negotiation integrity.

Use Scenario: Cell balancing and charge/discharge path control in 12 V LiFePO₄ battery packs.

IC Role / Device Role / Timing Role: High-current switch enabling active balancing current up to 2 A per cell string.

Use Value: 3 A ICM withstands transient overcurrent during fault recovery, eliminating need for external fusing.

DC/DC Converter Strobe Flash Unit

Use Scenario: Synchronous rectification in 24 V → 5 V buck converters for infotainment head units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in continuous conduction mode.

Use Value: 230 MHz fT ensures clean turn-off at 500 kHz switching, minimizing shoot-through risk with standard gate drivers.

Use Scenario: High-current pulse switching for xenon tube ignition in automotive lighting systems.

IC Role / Device Role / Timing Role: Primary switch delivering 2 A pulses with <300 µs duration and 2 % duty cycle.

Use Value: 150 °C Tj max and 3 A ICM support repeated 100-pulse bursts without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS40201LT1G VCEO = 40 V, IC = 2 A, but VCE(sat) = 220–400 mV at 2 A - 30 % higher typical conduction loss. Lacks AEC-Q101 qualification; rated only for industrial temp range (−55 to +150 °C), not automotive stress testing. Select when cost sensitivity outweighs automotive qualification and thermal performance requirements.
Diodes Incorporated DXTN20040CTR VCEO = 40 V, IC = 2 A, RCE(sat) = 120–180 mΩ - slightly lower resistance, but package is SOT323 (smaller pad area). SOT323 footprint reduces thermal dissipation capability (Rth(j-a) ≈ 350 K/W), limiting continuous current to ~1.3 A on same PCB. Select only if board space is constrained and peak pulse operation dominates over continuous thermal load.

Compared with NSS40201LT1G and DXTN20040CTR, PBSS4240T-QR uniquely combines AEC-Q101 compliance, 260 K/W thermal resistance with optimized SOT23 layout, and sub-200 mΩ RCE(sat), making it the only choice for thermally demanding automotive switching where reliability and conduction efficiency are jointly critical.

Availability

PBSS4240T-QR is available at Aetrix Electronics and suitable for automotive supply line switching, battery management systems, and DC/DC converter designs requiring stable component supply across multi-year production cycles.

Supply support for PBSS4240T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PBSS4240T-QR belongs to Nexperia's Automotive Logic and Power portfolio, engineered specifically for robust, low-loss switching in harsh-environment automotive subsystems including body control, lighting, and power distribution.

FAQ

What is the maximum continuous collector current for PBSS4240T-QR at 85 °C ambient?

At Tamb = 85 °C, the maximum continuous IC is 1.3 A when mounted on an FR4 PCB with 1 cm² collector pad (Rth(j-a) = 260 K/W) and assuming Tj ≤ 150 °C. This is derived from ΔT = (150 − 85) °C = 65 K and Pdiss = 65 K / 260 K/W = 250 mW, then IC = √(Pdiss/RCE(sat)) ≈ √(0.25/0.17) ≈ 1.2 A - rounded conservatively to 1.3 A per Nexperia's derating curves.

Is PBSS4240T-QR pin-compatible with PBSS5240T-Q?

No - PBSS4240T-QR is an NPN transistor with pinout Base–Emitter–Collector (1–2–3), while PBSS5240T-Q is its PNP complement with pinout Emitter–Base–Collector (1–2–3). Swapping them without circuit redesign causes polarity inversion and functional failure; they share package and marking format but not electrical or pinout compatibility.

Does PBSS4240T-QR require a base resistor when driven by a 3.3 V microcontroller GPIO?

Yes - with hFE ≥ 150 at IC = 2 A, minimum required IB is 13.3 mA. A 3.3 V GPIO with 20 mA drive capability needs RB ≤ (3.3 V − 0.75 V)/13.3 mA ≈ 190 Ω. A 180 Ω resistor ensures full saturation while staying within GPIO limits, as confirmed by VBE(on) = 0.75 V and VBE(sat) ≤ 1.1 V data.

Can PBSS4240T-QR replace a standard 2N3904 in high-current applications?

No - the 2N3904 is rated for IC = 200 mA and VCEO = 40 V, but its VCE(sat) exceeds 300 mV only at IC = 10 mA. PBSS4240T-QR handles 10× higher current with 5× lower RCE(sat), but requires different base drive (≥50 mA vs. ~1 mA), PCB thermal layout, and is not a drop-in replacement due to dissimilar gain, capacitance, and SOA.

PBSS4240T-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
350 @ 100mA, 2V
Power - Max:
300 mW
Frequency - Transition:
230MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBSS4240T-QR FAQ

1.How can I place an order for PBSS4240T-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4240T-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4240T-QR reliable?

The price and inventory of PBSS4240T-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4240T-QR is usually 5 days.

3.What payment methods are accepted for PBSS4240T-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4240T-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4240T-QR?

PBSS4240T-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4240T-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4240T-QR?

For technical support, including PBSS4240T-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4240T-QR requirements.

6.How does Aetrix verify that PBSS4240T-QR is sourced from the original manufacturer or authorized distributors?

All PBSS4240T-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4240T-QR meets industry standards.

7.What is the process for return or replacement of PBSS4240T-QR?

All PBSS4240T-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4240T-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4240T-QR part is unused and in its original packaging.

Return procedure for PBSS4240T-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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