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Nexperia USA Inc. PBSS4330PA,115

Part No.:
PBSS4330PA,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-PowerUDFN
Datasheet:
AetrixPBSS4330PA,115.pdf
Description:
TRANS NPN 30V 3A 3HUSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,020

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Product details

Overview

PBSS4330PA,115 from Nexperia is an NPN low VCEsat BISS transistor in a DFN2020-3 (SOT1061) leadless package, rated for 30 V VCEO, 3 A continuous collector current, and 75–100 mΩ RCEsat. It serves as a high-efficiency load switch in battery-powered power management circuits, delivering low conduction loss and compact PCB footprint.

For engineers reviewing the PBSS4330PA,115 datasheet, PBSS4330PA,115 pinout, PBSS4330PA,115 application, or PBSS4330PA,115 equivalent, key selection criteria include verified VCEsat ≤ 300 mV at 3 A/300 mA drive, thermal resistance as low as 60 K/W on ceramic PCB, and SOT1061 package compatibility with high-density reflow layouts.

Technical Context

This BISS transistor uses a breakthrough silicon structure optimized for ultra-low saturation voltage and high current gain (hFE = 180–310 at IC = 3 A), enabling efficient switching in medium-power DC loads without external base resistors in many configurations. Its exposed collector pad provides direct thermal and electrical path to PCB copper.

The device operates within −55 °C to 150 °C junction temperature range and supports pulsed peak currents up to 5 A (tp ≤ 1 ms). Switching performance includes ton = 63 ns and toff = 270 ns under standardized 9 V / 2 A test conditions, confirming suitability for high-frequency load control.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - Maximum safe collector-emitter blocking voltage in open-base configuration; defines upper rail limit for load-switch applications.
IC 3 A continuous - Rated DC collector current at Tamb ≤ 25 °C with standard FR4 mounting; enables direct driving of motors, fans, and charging paths.
RCEsat 75–100 mΩ at IC = 3 A / IB = 300 mA - Low on-resistance minimizes I²R loss and self-heating during sustained conduction.
VCEsat 220–300 mV at IC = 3 A / IB = 300 mA - Confirmed low saturation voltage ensures <0.3 V drop across switch, preserving battery voltage headroom.
hFE 180–310 at VCE = 2 V, IC = 3 A - High DC current gain reduces required base drive current, easing MCU GPIO interface design.
toff 270 ns - Fast turn-off time supports PWM frequencies >1 MHz in power management ICs and synchronous rectifier auxiliary switches.
Rth(j-a) 60 K/W on Al2O3 ceramic PCB - Enables 2.1 W power dissipation at 25 °C ambient, critical for thermally constrained portable designs.

Pinout & Package

DFN2020-3 (SOT1061) is an ultra-thin, leadless, thermally enhanced plastic package measuring 2.0 × 2.0 × 0.65 mm with an exposed collector pad on the bottom side for direct PCB heat sinking.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input node; requires ~300 mA drive for full saturation at 3 A load; compatible with 3.3 V/5 V logic-level sources.
2 Emiter (E) Reference terminal for load return path; internally connected to substrate; must be tied to system ground or low-side reference.
3 Collector (C) Main power output node; electrically and thermally connected to exposed bottom pad; routed to high-current load (e.g., motor, charger IC input).

Key Features

Feature Design Value
Low VCEsat 220–300 mV at 3 A ensures minimal voltage drop and <0.9 W conduction loss, extending battery runtime in portable devices.
Exposed collector pad Direct thermal interface to PCB copper reduces Rth(j-a) to 60 K/W, allowing 2.1 W dissipation without heatsink on ceramic substrates.
High IC/ICM 3 A continuous / 5 A pulsed rating supports demanding loads like brushless fan drivers and USB PD charging switches.
SOT1061 footprint 2.0 × 2.0 mm body with no leads saves >50% board area vs. conventional SOT23, enabling ultra-compact power stage layouts.
BISS architecture Breakthrough In Small Signal structure delivers higher hFE and lower RCEsat than standard BJT or MOSFET alternatives at same die size.

Applications

Load Switching Battery Protection Circuit

Use Scenario: High-side power switch controlling power delivery to peripheral modules (e.g., GPS, BLE radio) in wearables.

IC Role / Device Role / Timing Role: NPN BISS transistor operating in saturation mode as a low-loss, logic-controlled power gate.

Use Value: 220–300 mV VCEsat preserves >98% of battery voltage at 3 A, minimizing brownout risk during burst transmission.

Use Scenario: Overcurrent cutoff element in Li-ion battery pack protection boards for portable tools.

IC Role / Device Role / Timing Role: Fast-acting current-limiting switch triggered by protection IC's fault signal.

Use Value: 270 ns toff enables sub-microsecond shutdown response, preventing cell damage during short-circuit events.

USB-C Charging Path Fan/Motor Power Stage

Use Scenario: Reverse-polarity and overvoltage protection switch in USB-C power delivery input stages.

IC Role / Device Role / Timing Role: Low-RCEsat series pass element controlled by PD controller's enable signal.

Use Value: 75–100 mΩ RCEsat limits conduction loss to <1 W at 3 A, avoiding thermal derating in sealed enclosures.

Use Scenario: PWM-driven power switch for 5 V/12 V DC cooling fans in network edge equipment.

IC Role / Device Role / Timing Role: Medium-power switching transistor handling 2–3 A load current at 25 kHz PWM frequency.

Use Value: 63 ns ton and 270 ns toff ensure clean square-wave drive with <1% dead-time distortion, reducing audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS4350PA,115 Higher VCEO = 50 V; identical SOT1061 package and RCEsat spec (75–100 mΩ) Supports 48 V industrial bus rails; not optimized for <30 V battery systems where PBSS4330PA offers tighter VCEsat distribution Select when system voltage exceeds 30 V but thermal and footprint constraints remain identical.
DMT3006LPSQ-13 MOSFET (30 V, 6.5 A); gate-driven; RDS(on) = 28 mΩ @ VGS = 4.5 V; larger TSOP-6 package Lower conduction loss at light loads; requires level-shifting for 1.8 V/3.3 V logic; no base current draw Prefer for ultra-low static loss or logic-level gate drive; avoid if board space or base-drive simplicity is prioritized.

Compared with PBSS4350PA,115, PBSS4330PA,115 offers tighter VCEsat tolerance at 30 V operation and lower cost in volume; versus DMT3006LPSQ-13, it eliminates gate drive complexity and reduces PCB area by 40%, though with higher conduction loss above 1 A.

Availability

PBSS4330PA,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply and long-term production continuity.

Supply support for PBSS4330PA,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

PBSS4330PA,115 belongs to Nexperia's BISS transistor product line, engineered specifically for space-constrained, thermally sensitive load-switching applications where low VCEsat and small SMD footprint are critical.

FAQ

What is the maximum allowable base current for PBSS4330PA,115?

The absolute maximum base current is 500 mA, per the Limiting Values table. However, typical saturation drive uses 300 mA at IC = 3 A to achieve VCEsat ≤ 300 mV. Exceeding 500 mA risks permanent bond-wire damage, even briefly, and is not supported by thermal or reliability testing.

Can PBSS4330PA,115 be used in high-side switch configurations?

Yes - its 30 V VCEO rating and robust 3 A IC make it suitable for high-side switching when driven by a dedicated base driver (e.g., charge pump or level shifter) that supplies ≥1.2 V VBEsat and sufficient current. The exposed collector pad must connect directly to the load's positive rail.

How does thermal performance change with PCB copper area?

Rth(j-a) improves from 250 K/W (standard FR4 footprint) to 60 K/W (ceramic PCB with standard footprint) - a 4.2× reduction. On FR4, increasing collector pad area from 0 cm² to 6 cm² lowers Rth(j-a) from 250 to 100 K/W, enabling 1.25 W vs. 2.1 W dissipation at Tamb = 25 °C.

Is PBSS4330PA,115 automotive qualified?

No - this part is not AEC-Q101 qualified and lacks automotive-specific screening, qualification reports, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in the Legal Information section; use only in industrial, consumer, or computing applications.

PBSS4330PA,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 300mA, 3A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
270 @ 1A, 2V
Power - Max:
2.1 W
Frequency - Transition:
210MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-HUSON (2x2)

PBSS4330PA,115 FAQ

1.How can I place an order for PBSS4330PA,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4330PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4330PA,115 reliable?

The price and inventory of PBSS4330PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4330PA,115 is usually 5 days.

3.What payment methods are accepted for PBSS4330PA,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4330PA,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4330PA,115?

PBSS4330PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4330PA,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4330PA,115?

For technical support, including PBSS4330PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4330PA,115 requirements.

6.How does Aetrix verify that PBSS4330PA,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4330PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4330PA,115 meets industry standards.

7.What is the process for return or replacement of PBSS4330PA,115?

All PBSS4330PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4330PA,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4330PA,115 part is unused and in its original packaging.

Return procedure for PBSS4330PA,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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