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Nexperia USA Inc. PBSS4350T,215
- Part No.:
- PBSS4350T,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBSS4350T,215.pdf
- Description:
- TRANS NPN 50V 2A TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,484
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Product details
Overview
PBSS4350T,215 from Nexperia is an NPN low VCE(sat) transistor in SOT23 package, designed for high-efficiency switching in power management circuits. It delivers 50 V VCEO, 2 A continuous collector current, 100–130 mΩ RCE(sat) at IC = 2 A / IB = 200 mA, and operates up to 150 °C junction temperature - enabling compact LDO regulators and battery charger switches.
For engineers reviewing the PBSS4350T,215 datasheet, PBSS4350T,215 pinout, PBSS4350T,215 application, or PBSS4350T,215 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, DC current gain (hFE ≥ 100 at IC = 3 A), and compatibility with standard SOT23 reflow footprints.
Technical Context
This discrete NPN transistor uses epitaxial planar technology optimized for low conduction loss in medium-power linear and switching applications. Its design emphasizes minimal VCE(sat) across wide current ranges (100 mA–3 A) and stable hFE over temperature (−55 °C to 150 °C), supported by pulsed test conditions (tp ≤ 300 µs, duty cycle ≤ 0.02).
The device features a robust absolute maximum rating set: 50 V VCEO, 5 A peak collector current (single pulse), and 1.2 W total power dissipation under pulsed operation. Thermal resistance varies from 104 K/W (pulsed) to 417 K/W (standard FR4 footprint), directly linking layout-dependent heatsinking to safe operating area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in supply-line switching. |
| IC (continuous) | 2 A - Rated DC collector current; supports sustained operation in DC/DC converter output stages without derating at Tamb ≤ 25 °C. |
| RCE(sat) | 100–130 mΩ - Confirmed on-resistance at IC = 2 A / IB = 200 mA; enables <100 mV VCE(sat) for ultra-low dropout regulation. |
| hFE | ≥100 - Minimum DC current gain at IC = 3 A / VCE = 2 V; ensures reliable base drive margin in high-current switching. |
| Tj(max) | 150 °C - Maximum junction temperature; allows operation in thermally constrained industrial enclosures with appropriate PCB copper area. |
| fT | 100 MHz - Transition frequency at VCE = 5 V / IC = 100 mA; supports fast switching in PWM-controlled power stages up to ~10 MHz practical bandwidth. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, standard FR4-compatible footprint per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control input requiring 200–300 mA base current to fully saturate at 2–3 A collector load; low VBE(sat) (≤370 mV) reduces driver losses. |
| 2 | Emitter (E) | Reference node for current sensing and feedback; connected to ground or low-side return path in common-emitter configurations. |
| 3 | Collector (C) | Main power output terminal; thermally coupled to PCB copper pad - mounting pad size directly impacts Rth(j-a) (230–417 K/W). |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 260–370 mV at IC = 2–3 A / IB = 100–300 mA - cuts conduction loss by >40% vs. standard bipolar transistors, improving thermal headroom. |
| High current gain | hFE ≥ 100 at IC = 3 A - reduces required base drive current and eases integration with low-power microcontrollers or logic-level drivers. |
| Thermal robustness | Rth(j-a) = 104 K/W under pulsed conditions - enables short-duration peak loads (e.g., inrush limiting) without thermal runaway. |
| Breakdown reliability | V(BR)CEO = 50 V (min), V(BR)CBO = 50 V (min) - ensures consistent blocking behavior across manufacturing lot and temperature range. |
Applications
| Power Management Switching | Low-Dropout Linear Regulation |
|---|---|
|
Use Scenario: High-side or low-side switching in 5–24 V industrial power rails, where fast turn-on and minimal voltage drop are critical. IC Role / Device Role / Timing Role: Discrete NPN switch controlling load enable/disable; replaces MOSFETs in cost-sensitive designs where gate drive complexity must be avoided. Use Value: 100–130 mΩ RCE(sat) limits voltage drop to <300 mV at 3 A, reducing heat generation and eliminating need for active cooling in space-constrained modules. |
Use Scenario: Pass element in adjustable LDO regulators delivering 1–3 A at <1 V dropout for FPGA core supplies or sensor bias rails. IC Role / Device Role / Timing Role: Series pass transistor regulating output voltage via emitter-follower configuration with external op-amp feedback. Use Value: Stable hFE ≥ 100 up to 3 A ensures predictable loop gain and transient response; low VCE(sat) extends usable input-output differential down to 0.4 V. |
| Battery Charger Control | DC/DC Converter Output Stage |
|
Use Scenario: Charge path switch in single-cell Li-ion chargers, managing connection between USB input and battery during CC/CV phases. IC Role / Device Role / Timing Role: Low-loss series switch isolating battery from input during fault conditions or termination; driven by charge controller GPIO. Use Value: 50 V VCEO provides 2× safety margin over 19.5 V USB PD inputs; 150 °C Tj(max) withstands brief thermal stress during fast-charge transitions. |
Use Scenario: Synchronous rectifier replacement in non-isolated buck converters (e.g., 12 V → 3.3 V @ 2 A) where MOSFET gate drive is unavailable. IC Role / Device Role / Timing Role: Low-saturation bipolar switch replacing Schottky diode in freewheeling path to reduce forward voltage loss. Use Value: 260 mV VCE(sat) at 2 A cuts conduction loss by 55% vs. 0.5 V Schottky, increasing efficiency from 88% to 92% in 2 A/12 V input designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40201MR6T1G | VCEO = 40 V, RCE(sat) = 120 mΩ @ IC = 2 A, SOT23 package | Lower voltage rating limits use to ≤36 V systems; identical thermal footprint but lower max junction temp (150 °C same) | Select when 40 V blocking suffices and second-source qualification is required; verify hFE stability at 3 A. |
| Diodes Incorporated DXTN3C40PSQ-13 | VCEO = 40 V, RCE(sat) = 95 mΩ @ IC = 2 A, SOT23-3 package | Marginally lower saturation resistance but reduced VCEO; automotive-qualified (AEC-Q101) variant available | Prefer for automotive-adjacent industrial designs needing extended reliability validation; not drop-in due to different marking and test specs. |
Compared with PBSS4350T,215, NSS40201MR6T1G trades 10 V blocking margin for broader distributor availability, while DXTN3C40PSQ-13 offers slightly better RCE(sat) but requires qualification for non-automotive use cases - making PBSS4350T,215 optimal for cost-sensitive 50 V industrial power switches.
Availability
PBSS4350T,215 is available at Aetrix Electronics and suitable for power management applications, low/medium-power DC/DC converters, and battery charger designs requiring stable component supply and long-term production continuity.
Supply support for PBSS4350T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability devices for power management, logic, and analog applications.
The PBSS4350T,215 belongs to Nexperia's low VCE(sat) bipolar transistor family, engineered specifically for efficiency-critical power switching in consumer, industrial, and computing equipment where MOSFET gate drive overhead is prohibitive.
FAQ
What is the maximum continuous collector current for PBSS4350T,215 under standard PCB conditions?
The PBSS4350T,215 is rated for 2 A continuous collector current at Tamb ≤ 25 °C on a standard FR4 PCB with single-sided copper and tin-plated traces. Derating is required above 25 °C ambient - for example, ~1.4 A at 70 °C ambient per thermal resistance of 417 K/W.
Can PBSS4350T,215 replace a MOSFET in a 3 A switching application?
Yes, but only where gate drive simplicity outweighs switching speed trade-offs. PBSS4350T,215 achieves 3 A pulsed operation with VCE(sat) ≤ 370 mV at IB = 300 mA, but its 100 MHz fT limits hard-switching frequencies to <10 MHz - unlike MOSFETs, it requires sustained base current and lacks inherent body diode recovery.
How does the RCE(sat) specification translate to real-world power loss?
At IC = 2 A and typical RCE(sat) = 115 mΩ, conduction loss is P = I²R = 4 × 0.115 = 0.46 W. On a standard FR4 board, this raises junction temperature by ΔT = 0.46 × 417 ≈ 192 °C above ambient - confirming the need for thermal relief (e.g., 6 cm² collector pad) to stay within 150 °C Tj.
Is PBSS4350T,215 qualified for automotive applications?
No. The January 2023 datasheet explicitly states "Product changed to non-automotive qualification" (Revision History, Table 8). It lacks AEC-Q101 stress testing and automotive-grade process controls. For automotive use, Nexperia recommends PBSS4350T-Q series variants, which undergo extended temperature cycling and humidity testing.
PBSS4350T,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 370mV @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 1A, 2V
- Power - Max:
- 540 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PBSS4350T,215 FAQ
1.How can I place an order for PBSS4350T,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS4350T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS4350T,215 reliable?
The price and inventory of PBSS4350T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4350T,215 is usually 5 days.
3.What payment methods are accepted for PBSS4350T,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4350T,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS4350T,215?
PBSS4350T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS4350T,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS4350T,215?
For technical support, including PBSS4350T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4350T,215 requirements.
6.How does Aetrix verify that PBSS4350T,215 is sourced from the original manufacturer or authorized distributors?
All PBSS4350T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4350T,215 meets industry standards.
7.What is the process for return or replacement of PBSS4350T,215?
All PBSS4350T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4350T,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS4350T,215 part is unused and in its original packaging.
Return procedure for PBSS4350T,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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