Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS4360PASX

Part No.:
PBSS4360PASX
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-UDFN Exposed Pad
Datasheet:
AetrixPBSS4360PASX.pdf
Description:
TRANS NPN 60V 3A DFN2020D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,119

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS4360PASX from Nexperia is a 60 V, 3 A NPN low VCEsat transistor in an ultra-thin DFN2020D-3 (SOT1061D) leadless SMD package, designed for high-efficiency load switching in space-constrained power management circuits. It delivers RCEsat = 73–108 mΩ at IC = 3 A / IB = 300 mA, supports 175 °C junction operation, and features side-wettable flanks for AOI-compatible solder joint inspection.

For engineers reviewing the PBSS4360PASX datasheet, PBSS4360PASX pinout, PBSS4360PASX application, or PBSS4360PASX equivalent, this device is selected for high-current, low-loss switching where thermal performance, PCB area reduction, and automated optical inspection capability are critical design requirements.

Technical Context

This NPN transistor operates as a medium-power discrete switch with optimized saturation characteristics: VCEsat = 220–325 mV at IC = 3 A and IB = 300 mA, enabling minimal conduction loss in battery-fed and motor-drive applications. Its exposed collector pad provides direct thermal path to PCB copper, supporting up to 2.5 W total power dissipation on a 4-layer FR4 board with 1 cm² mounting pad.

The device exhibits hFE = 75–140 at IC = 3 A and VCE = 5 V, ensuring robust DC current gain under high-load conditions. Switching performance includes ton = 141 ns and toff = 310 ns with IBon/IBoff = ±0.1 A, suitable for PWM-controlled power stages up to several hundred kHz.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 60 V - Maximum blocking voltage between collector and emitter with base open; defines safe operating range in 24–48 V systems.
IC 3 A continuous - Sustained collector current rating; enables direct drive of small motors, fans, or LED arrays without external heatsinking.
RCEsat 73–108 mΩ - Low saturation resistance reduces I²R losses and self-heating during conduction, improving system efficiency.
Tj max 175 °C - Maximum junction temperature; allows reliable operation in high-ambient environments like automotive under-hood or industrial enclosures.
Package DFN2020D-3 (SOT1061D) - 2 mm × 2 mm × 0.65 mm ultra-thin leadless package with side-wettable flanks for AOI and enhanced thermal transfer via exposed collector pad.
hFE 75–140 at IC = 3 A - High DC current gain ensures stable saturation with modest base drive (e.g., 300 mA), easing microcontroller GPIO interface.
toff 310 ns - Fast turn-off time supports high-frequency PWM control while minimizing switching losses in power switches.

Pinout & Package

DFN2020D-3 (SOT1061D) is a 3-terminal, leadless, ultra-thin surface-mount package with an exposed collector pad on the bottom and side-wettable flanks for solder joint inspection. The package measures 2.0 mm × 2.0 mm × 0.65 mm and uses a 1.3 mm pitch.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input terminal; requires ~300 mA drive for full saturation at 3 A collector current; low VBEsat (0.9–1.1 V) eases driver selection.
2 Emitter (E) Reference node for base-emitter junction; connected to ground or low-side return path; forms current return path for switched load.
3 Collector (C) High-current output terminal; electrically and thermally connected to exposed bottom pad; must be routed to large copper area for thermal management.

Key Features

Feature Design Value
Low VCEsat 220–325 mV at IC = 3 A - Reduces conduction loss by >50% vs. standard transistors, lowering thermal stress in compact designs.
Side-wettable flanks Visible solder joints on package edges - Enables Automated Optical Inspection (AOI) for production line quality assurance without X-ray.
Exposed collector pad Direct thermal path to PCB - Achieves Rth(j-a) = 60 K/W on 4-layer FR4 with 1 cm² pad, enabling higher sustained current without derating.
High-temperature operation Rated to Tj = 175 °C - Supports use in sealed enclosures, near heat sources, or industrial environments where ambient exceeds 105 °C.
Medium power capability Ptot = 2.5 W on optimized PCB - Balances size and power handling for space-limited battery-powered devices and portable chargers.

Applications

Load Switching Battery-Powered Devices

Use Scenario: Controlling power delivery to peripheral modules (e.g., sensors, radios) in IoT edge nodes using MCU GPIO.

IC Role / Device Role / Timing Role: NPN low-side switch enabling precise on/off control with minimal standby leakage (<100 nA).

Use Value: Ultra-low RCEsat minimizes voltage drop and self-heating, extending battery life and maintaining stable supply rail during active periods.

Use Scenario: Enabling/disabling charging circuitry in USB-C power banks during charge termination or fault conditions.

IC Role / Device Role / Timing Role: High-current switch isolating battery from charger IC or protection circuitry during fault events.

Use Value: 6 A peak current rating handles inrush surges; 175 °C rating ensures reliability during repeated charge cycles in confined thermal envelopes.

Motor/Fan Control Power Management

Use Scenario: Driving 12 V DC cooling fans in network equipment or industrial controllers using PWM from microcontroller.

IC Role / Device Role / Timing Role: Low-loss switching element in half-bridge or single-ended topology; fast toff = 310 ns supports 20+ kHz PWM.

Use Value: Low VCEsat and high hFE reduce gate driver burden and conduction loss, improving fan efficiency and reducing audible noise.

Use Scenario: Managing auxiliary power rails (e.g., 5 V or 3.3 V) in multi-rail embedded systems with dynamic load sequencing.

IC Role / Device Role / Timing Role: Discrete load switch replacing integrated PMICs where cost, thermal, or layout constraints favor discrete solutions.

Use Value: DFN2020D-3 footprint saves >60% PCB area vs. SO-8 alternatives while delivering identical 3 A capability and thermal performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS40201MR6T1G 60 V, 2 A, RCEsat = 110–160 mΩ; SOT-723 package (1.25 mm × 1.25 mm); lower current rating. Lower IC limits use to sub-2 A loads; smaller footprint trades off thermal margin for extreme miniaturization. Select when board space is more constrained than current demand and thermal headroom is sufficient.
Diodes Incorporated DXT7010Q-7 60 V, 3 A, RCEsat = 85–125 mΩ; SOT-363 package; includes integrated base resistor network (R1 = 10 kΩ, R2 = 10 kΩ). Eliminates external base resistors but adds fixed bias ratio; less flexible for custom drive optimization. Select when simplifying BOM and layout is prioritized over fine-tuned base drive and maximum efficiency.

Compared with NSS40201MR6T1G, PBSS4360PASX delivers 50% higher continuous current and lower RCEsat in a thermally superior package; versus DXT7010Q-7, it offers full base drive flexibility and better thermal resistance, making it preferable for high-reliability, high-efficiency power switching.

Availability

PBSS4360PASX is available at Aetrix Electronics and suitable for load switching, battery-powered devices, and motor/fan control applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for PBSS4360PASX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for high-volume applications.

PBSS4360PASX belongs to Nexperia's low VCEsat transistor family, engineered specifically for efficient, compact, and thermally robust power switching in consumer, industrial, and computing systems.

FAQ

What is the maximum continuous collector current for PBSS4360PASX?

The PBSS4360PASX is rated for 3 A continuous collector current (IC) at Tamb ≤ 25 °C with appropriate PCB copper area. Derating applies above ambient temperature-e.g., ~2.2 A at 85 °C ambient on a 4-layer FR4 board with 1 cm² collector pad per datasheet Figure 1.

Does PBSS4360PASX require a heatsink for 3 A operation?

No external heatsink is required. With proper PCB layout-including a minimum 1 cm² copper pour connected to the exposed collector pad on a 4-layer FR4 board-the device dissipates up to 2.5 W and sustains 3 A continuously at 25 °C ambient, per datasheet Table 5 and Figure 1.

Is PBSS4360PASX suitable for automotive applications?

No. Per Nexperia's revision history (v.3, July 2023), PBSS4360PASX is explicitly designated non-automotive. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 175 °C junction. Automotive designs require the -Q qualified variant (e.g., PBSS4360PASX-Q).

How does the side-wettable flank design aid manufacturing?

The side-wettable flanks provide visible, solderable edges on pins 1 and 3, enabling Automated Optical Inspection (AOI) systems to verify solder fillet formation and joint integrity without X-ray. This improves first-pass yield and reduces field failure risk in high-volume SMT assembly.

PBSS4360PASX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
325mV @ 300mA, 3A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 5V
Power - Max:
600 mW
Frequency - Transition:
160MHz
Operating Temperature:
175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020D-3

PBSS4360PASX FAQ

1.How can I place an order for PBSS4360PASX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4360PASX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4360PASX reliable?

The price and inventory of PBSS4360PASX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4360PASX is usually 5 days.

3.What payment methods are accepted for PBSS4360PASX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4360PASX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4360PASX?

PBSS4360PASX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4360PASX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4360PASX?

For technical support, including PBSS4360PASX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4360PASX requirements.

6.How does Aetrix verify that PBSS4360PASX is sourced from the original manufacturer or authorized distributors?

All PBSS4360PASX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4360PASX meets industry standards.

7.What is the process for return or replacement of PBSS4360PASX?

All PBSS4360PASX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4360PASX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4360PASX part is unused and in its original packaging.

Return procedure for PBSS4360PASX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS4360PASX Tags

  • PBSS4360PASX
  • PBSS4360PASX PDF
  • PBSS4360PASX Datasheet
  • PBSS4360PASX Specifications
  • PBSS4360PASX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS4360PASX
  • Buy PBSS4360PASX
  • PBSS4360PASX Price
  • PBSS4360PASX Distributor
  • PBSS4360PASX Supplier
  • PBSS4360PASX Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER