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Nexperia USA Inc. PBSS4360XX

Part No.:
PBSS4360XX
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixPBSS4360XX.pdf
Description:
TRANS NPN 60V 3A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:663

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Product details

Overview

PBSS4360XX from Nexperia is an NPN low VCE(sat) BISS transistor in SOT89 package, rated for 60 V VCEO, 3 A continuous collector current, and 140 mΩ RCE(sat) at IC = 2 A / IB = 200 mA. It serves as a high-efficiency switching element in DC-DC converters and battery-powered load drivers where thermal performance and voltage headroom are critical.

For engineers reviewing the PBSS4360XX datasheet, PBSS4360XX pinout, PBSS4360XX application, or PBSS4360XX equivalent, key selection criteria include its AEC-Q101 qualification, 6 A peak pulse current capability, 1.35 W power dissipation on 6 cm² copper pad, and low saturation resistance enabling reduced conduction loss in 5–24 V supply rail switching.

Technical Context

This BISS (Breakthrough in Small Signal) transistor uses optimized epitaxial base design to achieve lower VCE(sat) than standard bipolar transistors while maintaining robust hFE of 75 at IC = 3 A. Its structure supports fast switching with fT = 145 MHz and low Cc = 11 pF, making it suitable for medium-frequency PWM control.

The device operates across −55 °C to 150 °C junction temperature, with thermal resistance Rth(j-a) as low as 93 K/W when mounted on 6 cm² copper, directly supporting automotive under-hood and industrial power module designs requiring sustained 2–3 A DC switching.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 60 V - Maximum blocking voltage in common-emitter configuration; enables use in 48 V system rails and 24 V industrial supplies.
IC 3 A continuous - Sustained collector current rating at Tamb ≤ 25 °C with adequate PCB copper; supports LED driver and relay coil loads.
RCE(sat) 140 mΩ at IC = 2 A / IB = 200 mA - Low on-resistance reduces power loss to <280 mW under typical drive, minimizing heatsink requirements.
fT 145 MHz - Transition frequency confirms suitability for PWM frequencies up to ~10 MHz with acceptable gain margin.
hFE 75 at IC = 3 A - Sufficient DC current gain to support direct microcontroller GPIO drive (e.g., 3.3 V/20 mA source) without external pre-biasing.
Ptot 1.35 W on 6 cm² copper - Thermal derating allows stable operation at full current in compact SMT layouts with enhanced thermal pads.

Pinout & Package

SOT89 (SC-62) plastic surface-mount package: 4.5 mm × 2.5 mm × 1.5 mm body, 1.5 mm lead pitch, with exposed collector tab for thermal conduction. Mounting pad area directly impacts power handling-6 cm² copper yields 1.35 W rating.

Pin/Terminal Circuit Role Design Meaning
1 Emitter (E) Current return path; connected to ground or low-side reference; requires low-inductance trace for switching stability.
2 Collector (C) Main power output terminal; electrically and thermally tied to large copper pour for heat dissipation and current routing.
3 Base (B) Control input; driven by logic-level signal; requires series resistor (e.g., 1 kΩ) to limit IB ≤ 500 mA absolute max.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control modules and body electronics per stress test requirements.
Low VCE(sat) 275 mV at IC = 2 A / IB = 200 mA - Reduces conduction loss by >40% vs. standard bipolar transistors at same current.
High ICM 6 A single-pulse (tp ≤ 1 ms) - Supports inrush current handling in motor and solenoid drive without secondary protection.
Thermal robustness Rth(j-a) = 93 K/W with 6 cm² copper - Enables operation at full 3 A load in ambient up to 70 °C without forced air.

Applications

DC-DC Converter Switch Battery Charger Control

Use Scenario: Step-down (buck) converter in portable medical devices operating from 12 V Li-ion packs.

IC Role / Device Role / Timing Role: Main power switch replacing MOSFETs in cost-sensitive, low-noise designs where gate drive complexity must be minimized.

Use Value: 140 mΩ RCE(sat) limits conduction loss to <560 mW at 2 A, reducing thermal footprint versus standard BJTs and avoiding gate driver ICs.

Use Scenario: Constant-current charging stage for 3-cell NiMH battery packs in cordless power tools.

IC Role / Device Role / Timing Role: Linear pass element controlled by op-amp feedback loop to regulate charge current.

Use Value: 75 hFE ensures stable closed-loop gain with minimal base drive error; 60 V VCEO accommodates input surges up to 50 V.

LCD Backlight Driver Inductive Load Switch

Use Scenario: PWM-controlled current sink for white LED strings in automotive instrument clusters.

IC Role / Device Role / Timing Role: High-side or low-side current regulator switching at 1–5 kHz to dim backlight brightness.

Use Value: 145 MHz fT and low Cc = 11 pF ensure clean switching edges with <100 ns rise/fall times, minimizing EMI in sensitive analog zones.

Use Scenario: Driving 24 V DC relays and buzzer coils in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay contacts in high-cycle-count switching applications.

Use Value: 6 A ICM safely absorbs 5× inductive kickback energy; AEC-Q101 qualification guarantees reliability over 10⁶ cycles at 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS40301MR6T1G VCEO = 40 V, IC = 3 A, RCE(sat) = 160 mΩ - Lower voltage rating, higher saturation resistance. Restricted to ≤36 V systems; less efficient in 48 V DC-DC stages. Select only if board space requires SOT-23 and voltage stress remains <30 V.
Diodes Incorporated DXT6011000000000 VCEO = 60 V, IC = 2.5 A, RCE(sat) = 150 mΩ - Slightly lower current and higher RCE(sat). Marginally lower thermal headroom in continuous 3 A loads; requires larger copper area for same Ptot. Acceptable for intermittent duty-cycle applications but not for sustained 3 A linear regulation.

Compared with NSS40301MR6T1G and DXT6011000000000, PBSS4360XX delivers superior voltage margin, lower conduction loss, and AEC-Q101 validation-making it the preferred choice for automotive-grade 48 V subsystems and industrial power switches demanding long-term reliability at full rated current.

Availability

PBSS4360XX is available at Aetrix Electronics and suitable for DC-DC conversion, battery charger control, and inductive load switching requiring stable component supply across automotive, industrial, and medical equipment programs.

Supply support for PBSS4360XX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and automotive-grade quality.

PBSS4360XX belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-VCE(sat) switching in space-constrained power management applications where bipolar simplicity meets MOSFET-like efficiency.

FAQ

Is PBSS4360XX pin-compatible with standard SOT89 NPN transistors?

Yes-PBSS4360XX uses standard SOT89 pinning: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. This matches industry-standard layout for SOT89-packaged NPN transistors, enabling drop-in replacement in existing footprints without PCB revision, provided thermal and electrical margins are verified.

What is the maximum safe base current for continuous operation?

The absolute maximum DC base current is 500 mA, but for reliable continuous operation, IB should be limited to ≤200 mA (per datasheet test condition for RCE(sat)). Exceeding this risks thermal runaway at high ambient temperatures; a 1 kΩ series resistor from a 3.3 V GPIO limits IB to 3.3 mA, sufficient for 3 A IC given hFE ≥ 75.

Can PBSS4360XX replace a MOSFET in low-side switching applications?

Yes, in cases where gate drive complexity, cost, or EMI sensitivity make MOSFETs impractical. PBSS4360XX offers comparable RDS(on)-equivalent conduction loss (140 mΩ), no gate charge, and inherent avalanche ruggedness-ideal for 1–10 kHz PWM in LED drivers and relay controls where sub-ns switching is unnecessary.

Does PBSS4360XX require a flyback diode when driving inductive loads?

Yes-although the device has robust SOA, inductive loads (relays, motors, solenoids) generate reverse EMF exceeding VCEO during turn-off. A fast-recovery flyback diode (e.g., BAS21) must be placed across the load to clamp voltage spikes and prevent junction breakdown, especially in 24–48 V systems.

PBSS4360XX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 3A, 300mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 3A, 5V
Power - Max:
1.35 W
Frequency - Transition:
75MHz
Operating Temperature:
-55°C ~ 150°C (TA)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

PBSS4360XX FAQ

1.How can I place an order for PBSS4360XX through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4360XX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4360XX reliable?

The price and inventory of PBSS4360XX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4360XX is usually 5 days.

3.What payment methods are accepted for PBSS4360XX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4360XX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4360XX?

PBSS4360XX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4360XX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4360XX?

For technical support, including PBSS4360XX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4360XX requirements.

6.How does Aetrix verify that PBSS4360XX is sourced from the original manufacturer or authorized distributors?

All PBSS4360XX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4360XX meets industry standards.

7.What is the process for return or replacement of PBSS4360XX?

All PBSS4360XX units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4360XX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4360XX part is unused and in its original packaging.

Return procedure for PBSS4360XX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS4360XX Tags

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