Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS4480X-QF

Part No.:
PBSS4480X-QF
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixPBSS4480X-QF.pdf
Description:
TRANS NPN 80V 4A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,017

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS4480X-QF from Nexperia is an AEC-Q101-qualified NPN low VCEsat transistor in SOT89 package, designed for medium-power switching in automotive and industrial systems. It delivers 80 V VCEO, 4 A continuous collector current, 40–54 mΩ RCEsat at 5 A/500 mA drive, and operates up to 150 °C junction temperature - enabling high-efficiency fan/motor drivers and DC-DC power switches.

For engineers reviewing the PBSS4480X-QF datasheet, PBSS4480X-QF pinout, PBSS4480X-QF application, or PBSS4480X-QF equivalent, key selection criteria include its low saturation resistance under high-current pulsed operation (IC = 5 A, IB = 500 mA), AEC-Q101 qualification status, thermal performance on FR4 PCBs with 6 cm² collector pad, and compatibility with standard SOT89 reflow footprints.

Technical Context

This device is a silicon NPN bipolar junction transistor optimized for low-saturation-voltage switching in medium-power linear and switching applications. Its architecture supports high hFE (80–140 at IC = 4 A) and low VCEsat (170–230 mV) under pulsed conditions with δ ≤ 0.02, enabling reduced conduction losses in battery-powered and thermally constrained designs.

Thermal design is defined by multiple Rth(j-a) values depending on PCB layout: 50 K/W on standard FR4 footprint, 90 K/W with 1 cm² collector pad, and 80 K/W on ceramic PCB - requiring explicit thermal pad implementation per application requirements. The device is not intended for linear amplification but for saturated-switch operation with base-driven control logic.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 80 V - Maximum safe collector-emitter voltage with base open; defines maximum blocking capability in switch-off state.
IC (continuous) 4 A - Continuous DC collector current rating at Tamb ≤ 25 °C on FR4 PCB with 6 cm² collector pad.
RCEsat 40–54 mΩ - Equivalent on-resistance at IC = 5 A / IB = 500 mA pulse; directly determines conduction loss (P = I²R) in switched mode.
hFE 80–140 - DC current gain at VCE = 2 V, IC = 4 A, pulsed; enables efficient base drive sizing for low-loss saturation.
Tj(max) 150 °C - Maximum junction temperature; sets thermal derating envelope for sustained operation in automotive under-hood environments.
fT 120–150 MHz - Transition frequency at VCE = 10 V, IC = 100 mA; indicates usable bandwidth for fast switching transitions.

Pinout & Package

SOT89 (SC-62) plastic surface-mount package: 3-lead, 1.5 mm pitch, 4.5 mm × 2.5 mm × 1.5 mm body, with exposed collector tab for thermal conduction to PCB copper.

Pin/Terminal Circuit Role Design Meaning
1 Emitter Current return path; connected to ground or low-side reference; requires low-inductance routing in high-di/dt switching.
2 Collector Main power output terminal; electrically and thermally connected to large PCB copper area (≥6 cm² recommended) for heat dissipation.
3 Base Control input; driven with ≥200 mA peak current to achieve full saturation at 4 A load; requires series resistor to limit IB and prevent overdrive.

Key Features

Feature Design Value
AEC-Q101 qualified Stress-tested per Automotive Electronics Council standard for discrete semiconductors - validated for under-hood automotive use including temperature cycling, HTRB, and ESD.
Low RCEsat (40 mΩ typ.) Reduces conduction loss by >30% vs. standard BJT alternatives at 5 A, lowering thermal load and enabling smaller heatsinks or higher power density.
High IC capability (4 A) Supports direct driving of medium-power loads (e.g., 12 V/24 V fans, solenoids, LED strings) without external driver stages.
High hFE at high current Maintains gain ≥80 at IC = 4 A, allowing practical base drive with MCU GPIO or low-power logic buffers instead of dedicated drivers.
Thermally optimized SOT89 Exposed collector tab enables direct thermal coupling to PCB; Rth(j-sp) = 16 K/W allows reliable operation up to 1.6 W on ceramic substrate.

Applications

Automotive Fan Control TFT Display Inverter

Use Scenario: PWM-controlled cooling fan in engine bay or HVAC module operating at 12 V/24 V with ambient up to 105 °C.

IC Role / Device Role / Timing Role: Low-side saturated switch controlling fan motor current; handles repetitive 10 A peak pulses during startup.

Use Value: 40 mΩ RCEsat limits power loss to <1 W at 4 A, reducing thermal stress and eliminating need for external heatsink in compact modules.

Use Scenario: High-voltage DC-DC stage in TFT-LCD backlight inverter for automotive infotainment displays.

IC Role / Device Role / Timing Role: Primary switching transistor in flyback or boost converter topology; switching at ≤100 kHz with 5 A peak collector current.

Use Value: 150 MHz fT and fast VBEon response (<0.85 V at 2 A) support clean turn-on/turn-off edges, minimizing switching loss and EMI generation.

Battery Charger Switch LAN/ADSL Power Switch

Use Scenario: Output power switch in 5–20 W USB-C PD or multi-chemistry battery charger managing charge current up to 4 A.

IC Role / Device Role / Timing Role: Saturated switch in constant-current regulation loop; controlled by analog feedback amplifier or microcontroller DAC.

Use Value: Stable hFE across −55 °C to 100 °C ensures consistent current regulation accuracy without recalibration across environmental extremes.

Use Scenario: PoE-powered device (e.g., IP phone, security camera) using discrete DC-DC conversion from 48 V phantom power.

IC Role / Device Role / Timing Role: Primary switch in isolated forward or active clamp flyback converter; rated for 80 V blocking and 4 A average current.

Use Value: 80 V VCEO provides 20% margin above 48 V PoE supply, while AEC-Q101 qualification ensures long-term reliability in telecom infrastructure deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS40501MUTBG 60 V VCEO, 4.5 A IC, 45 mΩ RCEsat, SOT-23 package (lower power handling) Limited to ≤60 V systems; unsuitable for 80 V automotive transients or PoE+ applications Select only for space-constrained 5–12 V consumer applications where 80 V rating is unnecessary.
Diodes Incorporated DXTN4035PSQ-13 80 V VCEO, 3.5 A IC, 60 mΩ RCEsat, SOT89 package, AEC-Q101 qualified Higher RCEsat increases conduction loss by ~50% at 4 A; lower IC rating reduces margin in peak-load scenarios Acceptable for cost-sensitive automotive modules where thermal headroom exists and peak current stays below 3.5 A.

Compared with NSS40501MUTBG and DXTN4035PSQ-13, PBSS4480X-QF uniquely combines 80 V rating, 4 A continuous current, sub-50 mΩ RCEsat, and AEC-Q101 qualification in SOT89 - making it the only option supporting high-reliability 24 V automotive loads with minimal thermal overhead.

Availability

PBSS4480X-QF is available at Aetrix Electronics and suitable for automotive fan control, TFT display inverters, battery chargers, and LAN/ADSL power switches requiring stable component supply, AEC-Q101 compliance, and thermal robustness on standard FR4 PCBs.

Supply support for PBSS4480X-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

PBSS4480X-QF belongs to Nexperia's Automotive-qualified Low VCEsat Transistor product line, engineered specifically for thermally demanding, high-current switching in engine control units, body electronics, and power management subsystems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is 1 A per datasheet limiting values. However, for reliable continuous operation at 4 A collector current, the recommended base drive is 200–400 mA (IC/IB = 10–20), ensuring saturation without excessive power dissipation in the base-emitter junction. Exceeding 500 mA continuously risks thermal runaway due to localized heating at the bond wire interface.

Can PBSS4480X-QF be used in linear amplifier configurations?

No - this device is optimized and characterized exclusively for saturated switching operation. Its hFE variation across temperature and current, combined with lack of SOA (Safe Operating Area) data for linear mode, makes it unsuitable for Class-A or AB amplification. Use only in hard-switched, fully on/off applications with verified VCEsat and thermal margins.

What PCB layout practices maximize thermal performance?

To achieve the 1.6 W power dissipation rating, mount the device on a 7 cm² ceramic PCB with 1 cm² single-sided copper, or use an FR4 board with a minimum 6 cm² tin-plated copper pad connected to the collector (Pin 2) via multiple thermal vias. Avoid narrow traces between collector and pad; maintain ≥0.5 mm solder mask opening around the tab for full thermal contact.

Is the marking code "%1Y" unique to PBSS4480X-QF?

Yes - "%1Y" is the specific top-side marking for PBSS4480X-QF, where "%" is a placeholder for Nexperia's manufacturing site code (e.g., "A" for Manchester, "B" for Nijmegen). This code distinguishes it from non-automotive variants like PBSS4480X and confirms AEC-Q101 qualification when verified against Nexperia's official marking guide.

PBSS4480X-QF Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
230mV @ 200mA, 4A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 1A, 2V
Power - Max:
550 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

PBSS4480X-QF FAQ

1.How can I place an order for PBSS4480X-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4480X-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4480X-QF reliable?

The price and inventory of PBSS4480X-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4480X-QF is usually 5 days.

3.What payment methods are accepted for PBSS4480X-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS4480X-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS4480X-QF?

PBSS4480X-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4480X-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4480X-QF?

For technical support, including PBSS4480X-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4480X-QF requirements.

6.How does Aetrix verify that PBSS4480X-QF is sourced from the original manufacturer or authorized distributors?

All PBSS4480X-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4480X-QF meets industry standards.

7.What is the process for return or replacement of PBSS4480X-QF?

All PBSS4480X-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4480X-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4480X-QF part is unused and in its original packaging.

Return procedure for PBSS4480X-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS4480X-QF Tags

  • PBSS4480X-QF
  • PBSS4480X-QF PDF
  • PBSS4480X-QF Datasheet
  • PBSS4480X-QF Specifications
  • PBSS4480X-QF Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS4480X-QF
  • Buy PBSS4480X-QF
  • PBSS4480X-QF Price
  • PBSS4480X-QF Distributor
  • PBSS4480X-QF Supplier
  • PBSS4480X-QF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER