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Nexperia USA Inc. PBSS4580PA,115

Part No.:
PBSS4580PA,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-PowerUDFN
Datasheet:
AetrixPBSS4580PA,115.pdf
Description:
TRANS NPN 80V 5.6A 3HUSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,155

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Product details

Overview

PBSS4580PA from Nexperia is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless SOT1061 (HUSON3) package, rated for 80 V VCEO, 5.6 A continuous collector current, and 40–57 mΩ RCEsat at IC = 5.6 A / IB = 280 mA. It serves as a high-efficiency power switch in battery-driven load-switching circuits with minimal PCB footprint and enhanced thermal dissipation via exposed collector pad.

For engineers reviewing the PBSS4580PA datasheet, PBSS4580PA pinout, PBSS4580PA application, or PBSS4580PA equivalent, this device is selected for high-current, low-saturation-voltage switching where thermal performance on FR4 PCBs and compact 2 × 2 × 0.65 mm packaging are critical design constraints.

Technical Context

This BISS transistor uses a proprietary low-saturation structure optimized for high DC current gain (hFE = 240–425 at IC = 0.5–1 A) and fast switching (ton = 183 ns, toff = 925 ns), enabling efficient operation in pulse-width modulated power control. Its exposed collector terminal provides direct thermal path to PCB copper, supporting up to 2.1 W total power dissipation with 6 cm² mounting pad on FR4.

The device operates across −55 °C to +150 °C ambient, with absolute maximum ratings including 80 V VCEO/VCBO, 7 A peak collector current (tp ≤ 1 ms), and 600 mA base current - all validated under IEC 60134 limiting values framework.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO80 V - Maximum safe collector-emitter blocking voltage in open-base configuration.
IC5.6 A - Continuous DC collector current rating at Tamb ≤ 25 °C with standard FR4 layout.
RCEsat40–57 mΩ - Low saturation resistance at IC = 5.6 A / IB = 280 mA, minimizing conduction loss in high-current switches.
hFE240–425 - DC current gain range at VCE = 2 V, enabling stable biasing with modest base drive.
toff925 ns - Total turn-off time under VCC = 9 V, IC = 2 A, defining maximum usable PWM frequency.
Rth(j-a)60–250 K/W - Junction-to-ambient thermal resistance spanning ceramic PCB (60 K/W) to standard FR4 (250 K/W), guiding heatsinking strategy.
VBEsat1.0–1.1 V - Base-emitter saturation voltage at full load, determining base drive power and level-shifting requirements.

Pinout & Package

Package: SOT1061 (HUSON3), ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with exposed collector pad for thermal and electrical conduction.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input requiring ~280 mA base current to fully saturate at 5.6 A collector current.
2EmiterReference node for emitter-grounded switching configurations; electrically isolated from package body.
3CollectorPower output terminal integrated into exposed copper pad - must be soldered to PCB thermal pad for rated power handling.

Key Features

FeatureDesign Value
Low VCEsat230–320 mV at 5.6 A enables <1.8 W conduction loss, reducing heat generation in portable power stages.
Exposed collector padDirect thermal interface to PCB copper supports 2.1 W dissipation on ceramic substrate, eliminating need for external heatsink.
Ultra-compact footprint2 × 2 mm body area saves >50% PCB space versus comparable SO-8 or TO-252 devices in high-density layouts.
High ICM7 A single-pulse rating allows robust surge handling in motor startup or capacitor charging events.

Applications

Load SwitchingBattery Management

Use Scenario: High-side switching of 12–48 V DC loads (e.g., solenoids, LED arrays) in industrial controllers.

IC Role / Device Role / Timing Role: NPN BISS transistor operating in saturation mode as main power path switch.

Use Value: 40 mΩ RCEsat limits voltage drop to <230 mV at 5.6 A, preserving system efficiency and simplifying thermal design.

Use Scenario: Protection and enable switching in multi-cell Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: Load switch controlling discharge path between battery stack and motor driver.

Use Value: 80 V VCEO headroom accommodates transient spikes during load dump, ensuring reliability without clamping diodes.

Charging CircuitsDC Motor Control

Use Scenario: Constant-current regulation stage in USB-C PD or automotive accessory chargers.

IC Role / Device Role / Timing Role: Precision current-source transistor in feedback loop of linear or hybrid charger ICs.

Use Value: Tight VCEsat tolerance (±20%) and stable hFE vs. temperature enable accurate 1% current setting without trimming.

Use Scenario: H-bridge low-side switch driving brushed DC fans or small motors in HVAC systems.

IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronized with complementary PNP (PBSS5580PA) for bidirectional control.

Use Value: 183 ns ton/925 ns toff supports 100 kHz PWM without shoot-through risk, improving torque resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT3005LPS-1350 V VCEO, 5.5 A IC, 32 mΩ RDS(on) (MOSFET); gate-driven, no base current required.Lower voltage rating limits use to ≤36 V systems; zero gate current simplifies drive but requires level-shifting for high-side.Select when lower drive complexity and higher efficiency at light loads outweigh 30 V headroom reduction.
PBSS4041PAS,11540 V VCEO, 4.1 A IC, 55 mΩ RCEsat; same SOT1061 package and pinout.Reduced voltage/current capability suits cost-sensitive 24 V IoT nodes but not 48 V industrial loads.Choose for footprint-compatible upgrade path where 40 V rating suffices and lower RCEsat is not critical.

Compared with PBSS4580PA, DMT3005LPS-13 offers MOSFET-level efficiency but sacrifices 30 V blocking margin, while PBSS4041PAS,115 maintains identical packaging and BISS topology at reduced voltage-current capability - making it a direct drop-in for less demanding 24 V applications.

Availability

PBSS4580PA is available at Aetrix Electronics and suitable for load switching, battery management, and motor control applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PBSS4580PA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

PBSS4580PA belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power switching in space-constrained battery-operated and power-management systems.

FAQ

What is the maximum allowable junction temperature for PBSS4580PA?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent degradation of hFE and RCEsat. Thermal design must ensure Tj remains ≤150 °C under worst-case ambient and power dissipation conditions, using appropriate PCB copper area per Table 6 thermal characteristics.

Can PBSS4580PA be used in high-frequency PWM applications above 50 kHz?

Yes - with measured ton = 183 ns and toff = 925 ns, PBSS4580PA supports clean switching up to ~100 kHz PWM in motor control and DC-DC pre-regulator stages. However, switching losses increase significantly above 50 kHz due to minority-carrier storage time; gate-driven MOSFETs may be preferred for >200 kHz operation.

Is PBSS4580PA automotive qualified?

No - PBSS4580PA is not AEC-Q101 qualified. The datasheet explicitly states it is "non-automotive qualified" and unsuitable for safety-critical automotive applications. For automotive use, Nexperia's AEC-Q101-certified BISS transistors (e.g., PBSS4041PAS-Q) must be selected instead.

How does the exposed collector pad affect PCB layout and soldering?

The exposed collector (Pin 3) must be soldered to a dedicated thermal pad on the PCB, sized per datasheet recommendations (1–6 cm²). Reflow soldering is mandatory; hand-soldering risks insufficient thermal bond. Solder mask opening must match pad dimensions exactly to ensure full copper contact and avoid voiding that degrades thermal resistance.

PBSS4580PA,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5.6 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 280mA, 5.6A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 2A, 2V
Power - Max:
2.1 W
Frequency - Transition:
155MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-HUSON (2x2)

PBSS4580PA,115 FAQ

1.How can I place an order for PBSS4580PA,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS4580PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS4580PA,115 reliable?

The price and inventory of PBSS4580PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS4580PA,115 is usually 5 days.

3.What payment methods are accepted for PBSS4580PA,115?

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4.How is shipping managed for PBSS4580PA,115?

PBSS4580PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS4580PA,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS4580PA,115?

For technical support, including PBSS4580PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS4580PA,115 requirements.

6.How does Aetrix verify that PBSS4580PA,115 is sourced from the original manufacturer or authorized distributors?

All PBSS4580PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS4580PA,115 meets industry standards.

7.What is the process for return or replacement of PBSS4580PA,115?

All PBSS4580PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS4580PA,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS4580PA,115 part is unused and in its original packaging.

Return procedure for PBSS4580PA,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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