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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5120T,215

Name: PBSS5120T,215
Brand: Nexperia USA Inc.
SKU: PBSS5120T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5120T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5120T,215.pdf

Description:: TRANS PNP 20V 1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5120T,215 from Nexperia is a PNP low-V_CEsat transistor in SOT23 package, rated for −20 V V_CEO, −1 A continuous collector current, and 250 mΩ R_CEsat at −500 mA/−50 mA drive. It serves as a high-efficiency switching element in low-voltage DC-DC converters, battery chargers, and LED backlight drivers.

For engineers reviewing the PBSS5120T,215 datasheet, PBSS5120T,215 pinout, PBSS5120T,215 application, or PBSS5120T,215 equivalent, key selection criteria include verified AEC-Q101 qualification, guaranteed −250 mV V_CEsat at −1 A/−50 mA, thermal resistance of 260 K/W on optimized PCB, and SOT23 footprint compatibility with automated assembly.

Technical Context

This PNP bipolar junction transistor operates in saturation-switching mode with tightly controlled base-emitter turn-on voltage (−0.75 V typ) and high DC current gain (200–290 at −1 A). Its design targets minimal conduction loss in low-side switching configurations where emitter is tied to supply rail.

The device uses epitaxial planar technology with optimized doping profiles to achieve low R_CEsat while maintaining robust safe operating area (SOA) up to 2 A peak pulse. Thermal performance is specified for two mounting conditions: standard FR4 footprint (417 K/W) and enhanced collector pad (260 K/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum allowable collector-emitter voltage with open base; defines maximum blocking capability in switching applications
I_C	−1 A - Continuous DC collector current rating; sets steady-state load-handling capacity
V_CEsat	−250 mV max at I_C = −1 A, I_B = −50 mA - Confirmed saturation voltage enabling <0.25 W conduction loss at full rated current
R_CEsat	250 mΩ max at I_C = −500 mA, I_B = −50 mA - Directly usable for calculating power dissipation in pulsed operation
h_FE	200–290 at V_CE = −2 V, I_C = −1 A - Ensures reliable saturation with modest base drive, reducing driver-stage complexity
f_T	100–200 MHz - Supports fast switching transitions up to ~10 MHz square-wave operation with acceptable gain margin
P_tot	480 mW at T_amb ≤ 25 °C with 1 cm² collector pad - Defines maximum steady-state power handling under defined PCB layout

Pinout & Package

SOT23 plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, tin-plated leads, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal accepting negative current to forward-bias B-E junction; requires ≥−50 mA drive for full saturation at −1 A load
2	Emitter (E)	Current source terminal; connected to positive supply rail in typical low-side switch configuration
3	Collector (C)	Load return terminal; carries full switched current to ground or lower-potential node; thermally coupled to PCB pad

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22-A114
Low V_CEsat	≤−250 mV at −1 A ensures <0.25 W conduction loss, reducing heatsink requirements in space-constrained designs
High I_C/I_CM	−1 A continuous / −2 A peak enables single-device handling of moderate-power loads without paralleling
Optimized thermal R_th(j-a)	260 K/W with 1 cm² collector pad allows >300 mW sustained dissipation at +85 °C ambient

Applications

DC-to-DC Conversion

Supply Line Switching

Use Scenario: Step-down (buck) converter output stage in portable electronics requiring <3.3 V input.

IC Role / Device Role / Timing Role: PNP low-side synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: Achieves 2–3% efficiency gain over diode-based solutions due to 250 mV V_CEsat vs. 350–450 mV diode V_F at 1 A.

Use Scenario: Hot-swap control of 5 V or 3.3 V rails in industrial controllers.

IC Role / Device Role / Timing Role: Low-loss series pass switch placed between input supply and downstream circuitry.

Use Value: Enables <100 mΩ effective on-resistance path with predictable turn-off timing via base pull-up resistor.

Battery Charger

LCD Backlighting

Use Scenario: Charge-path isolation in single-cell Li-ion charger ICs with integrated FET control.

IC Role / Device Role / Timing Role: Reverse-polarity protection and charge-enable switch controlled by charger logic signal.

Use Value: Blocks reverse current during fault conditions while sustaining 1 A charging current with <0.25 W self-heating.

Use Scenario: Current-regulated LED string driver in automotive instrument clusters.

IC Role / Device Role / Timing Role: Constant-current sink for white LED strings powered from 12 V battery rail.

Use Value: Delivers stable 500–1000 mA drive with <±5% current variation across temperature due to tight h_FE distribution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12500UW3T1G	−20 V V_CEO, −1.2 A I_C, −180 mV V_CEsat at −1 A, SOT-323 package	Smaller footprint but lower thermal mass; R_th(j-a) = 350 K/W limits power handling	Select when board space is critical and peak power <200 mW; verify solder joint reliability for fine-pitch reflow.
Diodes Incorporated DMMT5120WQ-7	−20 V V_CEO, −1 A I_C, −280 mV V_CEsat at −1 A, AEC-Q101 qualified, SOT-323	Higher V_CEsat increases conduction loss by ~12% at full load; identical qualification level	Choose if SOT-323 is already standardized in design; accept minor efficiency penalty for supply-chain alignment.

Compared with PBSS5120T,215, NSS12500UW3T1G offers lower V_CEsat but reduced thermal derating, while DMMT5120WQ-7 matches qualification and current rating but trades higher saturation voltage for broader distributor availability.

Availability

PBSS5120T,215 is available at Aetrix Electronics and suitable for DC-to-DC conversion, supply line switching, and battery charger applications requiring stable component supply, automotive-grade reliability, and SOT23-compatible manufacturing flow.

Supply support for PBSS5120T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in bipolar transistors, MOSFETs, ESD protection, and logic ICs.

The PBSS5120T,215 belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for energy-efficient switching in automotive, industrial, and portable power systems where thermal constraints and efficiency targets are stringent.

FAQ

Is PBSS5120T,215 suitable for automotive applications?

Yes. The device is fully qualified to AEC-Q101 standards, including stress tests for temperature cycling, high-temperature reverse bias, and electrostatic discharge. It is rated for operation from −55 °C to +150 °C junction temperature and is widely used in automotive body electronics, infotainment power supplies, and LED lighting modules.

What is the recommended base drive for full saturation at 1 A collector current?

Nexperia specifies −50 mA base current for guaranteed −250 mV V_CEsat at −1 A collector current. A base resistor of 100 Ω is typical when driven from a 5 V logic source with active-low control, ensuring sufficient overdrive while limiting base power dissipation to <250 mW.

How does thermal performance differ between standard and enhanced PCB layouts?

With a standard FR4 footprint (no extended copper), R_th(j-a) is 417 K/W, limiting continuous power to ~115 mW at +85 °C ambient. With a 1 cm² collector pad, R_th(j-a) improves to 260 K/W, supporting up to 300 mW continuous dissipation-enabling use in higher-duty-cycle applications without forced cooling.

Can PBSS5120T,215 replace an NPN transistor in the same circuit?

No-it is a PNP device and cannot be directly substituted for an NPN without inverting control logic and adjusting biasing. Its complementary NPN part is PBSS4120T, which shares identical voltage/current ratings and package but opposite polarity. Circuit redesign is required for polarity swap.

PBSS5120T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 500mA, 2V

Power - Max:: 480 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5120T,215 FAQ

1.How can I place an order for PBSS5120T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5120T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5120T,215 reliable?

The price and inventory of PBSS5120T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5120T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5120T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5120T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5120T,215?

PBSS5120T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5120T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5120T,215?

For technical support, including PBSS5120T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5120T,215 requirements.

6.How does Aetrix verify that PBSS5120T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5120T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5120T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5120T,215?

All PBSS5120T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5120T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5120T,215 part is unused and in its original packaging.

Return procedure for PBSS5120T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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