Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5130T,215

Name: PBSS5130T,215
Brand: Nexperia USA Inc.
SKU: PBSS5130T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PBSS5130T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5130T,215.pdf

Description:: TRANS PNP 30V 1A TO-236AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,217

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PBSS5130T from Nexperia is a PNP low-V_CE(sat) transistor in SOT23 package, rated for −30 V V_CEO, −1 A continuous collector current, and 220 mΩ R_CE(sat) at −500 mA/−50 mA drive; used as a high-efficiency switch in low-voltage DC-DC converters and LED backlight drivers.

For engineers reviewing the PBSS5130T datasheet, PBSS5130T pinout, PBSS5130T application, or PBSS5130T equivalent, key selection criteria include verified AEC-Q101 qualification, thermal resistance (260 K/W with 1 cm² collector pad), and guaranteed V_CE(sat) ≤ 225 mV at −1 A/−50 mA drive under pulsed conditions.

Technical Context

This discrete PNP bipolar junction transistor operates in saturation switching mode with base-driven control logic, supporting fast turn-on/off via low V_BE(sat) (≤ −1.1 V) and high h_FE (210–290 at −1 A). Its design targets low-loss conduction in battery-powered and automotive supply-line applications.

Thermal performance is defined for two mounting conditions: standard FR4 footprint (R_th(j-a) = 417 K/W) and enhanced 1 cm² collector pad (R_th(j-a) = 260 K/W), enabling accurate junction temperature estimation across PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum safe collector-emitter voltage with open base; defines blocking capability in high-side switch configurations.
I_C	−1 A - Continuous DC collector current rating; supports stable operation in 1 A load-switching applications without derating at T_amb ≤ 25 °C.
V_CE(sat)	≤ −225 mV at I_C = −1 A, I_B = −50 mA - Confirmed saturation voltage enabling < 0.23 W conduction loss per device at full load.
R_CE(sat)	220 mΩ at I_C = −500 mA, I_B = −50 mA - Directly quantifies on-state resistance for power loss modeling in pulsed DC-DC stages.
h_FE	210–290 at V_CE = −2 V, I_C = −1 A - Ensures sufficient current gain to sustain saturation with modest base drive, reducing driver-stage complexity.
f_T	100–200 MHz - Supports reliable switching up to ~10 MHz with adequate gain margin; suitable for PWM frequencies in LED dimming and buck converter gate drivers.
AEC-Q101	Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC standard.

Pinout & Package

SOT23 plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body; optimized for automated placement and reflow soldering on FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −50 mA pulsed drive to achieve full saturation at −1 A collector current.
2	Emitter (E)	Common reference terminal tied to higher potential rail in high-side switch configuration; carries full load current.
3	Collector (C)	Switched output node connected to load; thermally coupled to PCB copper for heat dissipation (R_th(j-a) = 260 K/W with 1 cm² pad).

Key Features

Feature	Design Value
Low V_CE(sat)	≤ −225 mV at −1 A ensures < 0.23 W conduction loss, reducing thermal stress in compact battery-powered modules.
AEC-Q101 qualification	Validated for automotive under-hood and infotainment systems, including temperature cycling and HTRB stress tests.
High h_FE at full load	210–290 at −1 A enables robust saturation with minimal base drive current, simplifying driver IC selection.
Small SOT23 footprint	2.9 mm × 1.3 mm area allows dense layout in space-constrained DC-DC converters and portable lighting circuits.
Thermal optimization	260 K/W R_th(j-a) with 1 cm² collector pad supports > 400 mW dissipation at T_amb = 25 °C without heatsink.

Applications

DC-to-DC Conversion

Supply Line Switching

Use Scenario: Step-down (buck) converter top switch in 5–12 V input, 3.3 V/1 A output portable power supplies.

IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer during ON phase; driven by PWM controller with base resistor network.

Use Value: 220 mΩ R_CE(sat) limits conduction loss to < 0.25 W, enabling > 92% efficiency at full load without forced air cooling.

Use Scenario: Reverse-polarity protection and hot-swap control in automotive body control modules (BCM).

IC Role / Device Role / Timing Role: Low-loss series pass element in high-side supply path; activated/deactivated by microcontroller GPIO.

Use Value: −30 V V_CEO withstands load-dump transients; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Battery Charger

LCD Backlighting

Use Scenario: Charge-path MOSFET gate driver and current-sense amplifier bias supply in single-cell Li-ion charger ICs.

IC Role / Device Role / Timing Role: Precision current source/sink for analog circuitry; operates in linear region with controlled V_CE.

Use Value: Tight V_CE(sat) tolerance (±15 mV typical) maintains stable bias voltage across temperature, improving charge accuracy.

Use Scenario: Constant-current LED string driver in automotive instrument cluster LCD backlights (12 V input, 3× white LEDs).

IC Role / Device Role / Timing Role: PWM-controlled current sink switching LED strings at 1–5 kHz; base driven by MCU timer output.

Use Value: 200 MHz f_T ensures clean switching edges at 5 kHz, minimizing EMI and LED current ripple (< 2% peak-to-peak).

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12500UW3T1G	−20 V V_CEO, −1.2 A I_C, 180 mΩ R_CE(sat); SOT-323 package (smaller footprint, lower thermal mass)	Lower voltage rating limits use to ≤ 15 V systems; reduced thermal capacity requires tighter ambient control.	Select when board space is critical and system voltage stays below 15 V; verify thermal margin with 417 K/W R_th(j-a).
Diodes Incorporated DMMT5551-7-F	−160 V V_CEO, −500 mA I_C, 350 mΩ R_CE(sat); same SOT23 package but higher V_CEO/lower I_C	Higher blocking voltage suits industrial AC-DC auxiliary rails; lower current rating restricts to ≤ 500 mA loads.	Choose for high-voltage isolation applications where 1 A capability is unnecessary; confirm V_CE(sat) meets loss budget at reduced I_C.

Compared with NSS12500UW3T1G and DMMT5551-7-F, PBSS5130T uniquely balances −30 V blocking, −1 A current, and 220 mΩ on-resistance in SOT23-making it optimal for 12 V automotive DC-DC and battery-fed LED drivers where both voltage headroom and thermal efficiency are constrained.

Availability

PBSS5130T is available at Aetrix Electronics and suitable for DC-to-DC conversion, automotive supply-line switching, and LCD backlighting applications requiring stable component supply and AEC-Q101-compliant reliability.

Supply support for PBSS5130T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.

PBSS5130T belongs to Nexperia's low-V_CE(sat) transistor product line, engineered specifically for high-efficiency switching in battery-powered and automotive power management systems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is −300 mA per datasheet Table 5, but continuous DC base current must be limited to ensure junction temperature remains ≤ 150 °C. At I_C = −1 A and h_FE = 210, nominal I_B = −4.76 mA; sustained operation above −10 mA requires thermal analysis with R_th(j-a) = 260 K/W and ambient derating.

Can PBSS5130T replace an NPN transistor in the same circuit?

No-it is a PNP device with opposite polarity and complementary biasing requirements. Swapping with an NPN would invert logic states and likely cause circuit failure unless the entire drive network (voltage levels, current direction, and timing) is redesigned to accommodate emitter-high topology and negative base drive.

Is the 220 mΩ R_CE(sat) value guaranteed across temperature?

No-the 220 mΩ value is specified at T_amb = 25 °C with pulsed conditions (tp ≤ 300 µs, δ ≤ 0.02). R_CE(sat) increases with junction temperature; Figure 6 shows ~300 mΩ at T_j = 150 °C, requiring thermal design to maintain performance in sustained-load applications.

Does the AEC-Q101 qualification cover solder reflow profile compliance?

Yes-AEC-Q101 qualification includes process qualification of assembly methods. The PBSS5130T datasheet provides dedicated reflow (Figure 8) and wave soldering (Figure 9) footprints, and its SOT23 package is validated for standard lead-free reflow profiles up to 260 °C peak temperature per JEDEC J-STD-020.

PBSS5130T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 225mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 260 @ 500mA, 2V

Power - Max:: 480 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5130T,215 FAQ

1.How can I place an order for PBSS5130T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5130T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5130T,215 reliable?

The price and inventory of PBSS5130T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5130T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5130T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5130T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5130T,215?

PBSS5130T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5130T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5130T,215?

For technical support, including PBSS5130T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5130T,215 requirements.

6.How does Aetrix verify that PBSS5130T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5130T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5130T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5130T,215?

All PBSS5130T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5130T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5130T,215 part is unused and in its original packaging.

Return procedure for PBSS5130T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…