NXP Semiconductors PBSS5140S,126
- Part No.:
- PBSS5140S,126
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PBSS5140S,126.pdf
- Description:
- TRANS PNP 40V 1A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:4,554
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Product details
Overview
PBSS5140S from NXP Semiconductors is a 40 V, −1 A PNP low VCEsat transistor in SOT54 (TO-92) package, featuring ultra-low saturation voltage (−500 mV at −1 A/−100 mA), 830 mW power dissipation, and 150 MHz transition frequency. It serves as a high-efficiency switching device in battery-powered DC/DC converters and LCD back-lighting circuits.
For engineers reviewing the PBSS5140S datasheet, PBSS5140S pinout, PBSS5140S application, or PBSS5140S equivalent, key selection criteria include verified −40 V VCEO, confirmed RCEsat < 500 mΩ at −500 mA, thermal resistance of 150 K/W, and SOT54 through-hole pin mapping for manual assembly and legacy board compatibility.
Technical Context
The PBSS5140S employs a planar epitaxial PNP structure optimized for low on-state loss, with VCEsat specified down to −200 mV at light load (−100 mA/−1 mA) and −500 mV at full rated current (−1 A/−100 mA). Its hFE ranges from 160 to 800 across −1 mA to −1 A, supporting both linear regulation and hard-switching modes.
Thermal performance is defined for single-sided PCB mounting per IEC 60134, delivering 150 K/W junction-to-ambient resistance. Device reliability is enhanced by reduced self-heating due to low RCEsat and controlled junction temperature up to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V - supports 36 V nominal supply rails with 10 % margin for transients |
| IC (DC) | −1 A - enables direct drive of medium-power loads without external current gain staging |
| VCEsat | −500 mV @ −1 A/−100 mA - minimizes conduction loss and heat generation in high-current switching |
| RCEsat | <500 mΩ @ −500 mA - simplifies thermal design vs. standard bipolar transistors with >1 Ω on-resistance |
| fT | 150 MHz - allows stable operation in high-frequency DC/DC control loops up to ~15 MHz |
| Ptot | 830 mW @ Tamb ≤ 25 °C - permits continuous operation at −500 mA in ambient temperatures up to 70 °C |
| hFE | 160–800 - provides wide base drive flexibility across load current range without gain compression |
Pinout & Package
SOT54 (TO-92) plastic single-ended leaded through-hole package with 3 leads; standardized footprint per JEDEC TO-92 outline, compatible with wave soldering and hand assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node requiring −100 mA peak drive for full saturation at −1 A collector current |
| 2 | Collector | Main high-side current path; connected to positive rail in high-side switch configurations |
| 3 | Emitter | Common reference terminal tied to system ground or load return in PNP switching topologies |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCEsat | −500 mV max at −1 A ensures < 0.5 W conduction loss, reducing heatsink requirements |
| High DC current gain | hFE ≥ 160 at −1 A enables simple resistor-based base drive without Darlington staging |
| Robust thermal rating | 150 °C max junction temperature supports operation in sealed enclosures or high-ambient environments |
| Low leakage | ICEO ≤ −100 nA at −30 V enables reliable off-state blocking in battery-critical muting circuits |
Applications
| Medium Power Switching | Linear Regulators |
|---|---|
Use Scenario: Controlling 12 V/500 mA solenoid actuation in industrial control panels with intermittent duty cycle. IC Role / Device Role / Timing Role: PNP high-side switch providing load disconnect and reverse-polarity protection. Use Value: −500 mV VCEsat limits power loss to 250 mW, eliminating need for forced air cooling in enclosed cabinets. | Use Scenario: Pass element in adjustable 5 V/1 A negative LDO regulator for analog sensor biasing. IC Role / Device Role / Timing Role: Linear-mode current source with dynamic base control for output voltage regulation. Use Value: hFE stability across −1 mA to −1 A ensures consistent loop gain and load transient response. |
| DC/DC Converter | LCD Back-lighting |
Use Scenario: Synchronous rectifier driver in non-isolated buck converter powering FPGA core voltage. IC Role / Device Role / Timing Role: Fast-turn-off PNP switch controlling gate drive of N-channel MOSFET in high-side configuration. Use Value: 150 MHz fT supports clean switching edges at 500 kHz–1 MHz PWM frequencies with minimal delay skew. | Use Scenario: Current sink for white LED strings in portable medical display backlighting. IC Role / Device Role / Timing Role: Constant-current switch modulated via PWM to adjust brightness without color shift. Use Value: RCEsat < 500 mΩ ensures < 250 mV compliance voltage headroom at 500 mA, maximizing LED forward voltage utilization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS5140SF | SOT-23 surface-mount package; −40 V VCEO, −1 A IC, but VCEsat = −600 mV @ −1 A | Requires PCB redesign for SMT placement; higher saturation loss reduces efficiency in thermally constrained designs | Select when automated assembly and board space reduction outweigh thermal penalty |
| Diodes Incorporated DXT5140S | SOT54 package; identical pinout and −40 V/−1 A ratings, but VCEsat = −550 mV @ −1 A and hFE min = 120 | Direct drop-in replacement with slightly degraded saturation and gain margins | Choose for second-source assurance where −50 mV VCEsat increase is acceptable |
Compared with PBSS5140S, NSS5140SF trades through-hole compatibility for SMT scalability but incurs higher conduction loss, while DXT5140S offers mechanical interchangeability at the cost of marginal VCEsat and hFE degradation-both require validation of thermal derating in final layout.
Availability
PBSS5140S is available at Aetrix Electronics and suitable for medium-power switching, linear regulators, and LCD back-lighting applications requiring stable component supply, long-term obsolescence management, and traceable sourcing for industrial and consumer electronics programs.
Supply support for PBSS5140S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PBSS5140S belongs to NXP's low VCEsat bipolar transistor family, engineered specifically for energy-efficient switching in battery-powered and thermally constrained systems where traditional transistors incur excessive heat.
FAQ
What is the maximum continuous collector current rating for PBSS5140S?
The PBSS5140S has a maximum continuous collector current (IC) rating of −1 A under ambient temperature conditions ≤ 25 °C with standard PCB mounting. At elevated ambient temperatures or with reduced copper area, derating applies per the thermal resistance of 150 K/W; for example, at 70 °C ambient, the usable IC drops to approximately −500 mA to maintain Tj ≤ 150 °C. This rating is validated in the official NXP product data sheet dated 2004 Aug 13.
Does PBSS5140S support high-frequency switching applications?
Yes, the PBSS5140S supports high-frequency switching with a transition frequency (fT) of 150 MHz at −50 mA collector current and −10 V VCE. This enables clean edge fidelity in PWM-driven applications up to ~15 MHz fundamental frequency, provided base drive impedance and layout parasitics are minimized. The PBSS5140S datasheet confirms this parameter under defined test conditions, making it suitable for DC/DC converter gate drivers and fast muting circuits.
What is the pin configuration of PBSS5140S and how is it oriented in SOT54?
The PBSS5140S uses a SOT54 (TO-92) package with pin 1 = Base, pin 2 = Collector, and pin 3 = Emitter, viewed from the flat side with leads pointing downward and left-to-right numbering. This orientation is explicitly shown in Figure 1 of the NXP datasheet and matches JEDEC TO-92 mechanical standards. Correct identification is critical because miswiring pin 2 and pin 3 reverses polarity and risks immediate device failure in PNP configurations.
How does PBSS5140S compare to its NPN complement PBSS4140S?
The PBSS5140S is the PNP counterpart to the NPN PBSS4140S, sharing identical voltage (40 V), current (1 A), and thermal (830 mW) ratings, plus matching SOT54 packaging and pinout symmetry. Key differences include polarity inversion-PBSS4140S sinks current from load to ground, while PBSS5140S sources from rail to load-and complementary VCEsat curves optimized for respective topologies. Both devices are intended for paired use in H-bridge or dual-rail switching designs.
Is PBSS5140S suitable for linear regulator pass transistor applications?
Yes, the PBSS5140S is suitable as a pass transistor in linear regulators due to its high hFE (160–800), low VCEsat, and stable gain across load current. Its −500 mV VCEsat at −1 A limits dropout voltage and improves efficiency over standard PNP transistors, while the 150 °C junction rating supports sustained operation under thermal stress. The PBSS5140S datasheet explicitly lists "linear regulators" in its Applications section, confirming validated use in this mode.
PBSS5140S,126 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 100mA, 5V
- Power - Max:
- 830 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PBSS5140S,126 FAQ
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7.What is the process for return or replacement of PBSS5140S,126?
All PBSS5140S,126 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5140S,126, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS5140S,126 part is unused and in its original packaging.
Return procedure for PBSS5140S,126:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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