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Nexperia USA Inc. PBSS5140T,215

Part No.:
PBSS5140T,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBSS5140T,215.pdf
Description:
TRANS PNP 40V 1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,139

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Product details

Overview

PBSS5140T from Nexperia is a PNP low VCEsat transistor in SOT23 package, designed for high-efficiency switching in battery-powered and automotive-grade systems. It delivers −40 V VCEO, −1 A continuous IC, 300 mΩ typical RCEsat at −500 mA/−50 mA drive, and AEC-Q101 qualification - enabling compact, thermally efficient load switching in space-constrained portable electronics.

For engineers reviewing the PBSS5140T datasheet, PBSS5140T pinout, PBSS5140T application, or PBSS5140T equivalent, key selection criteria include verified low saturation resistance under pulsed conditions, thermal derating on FR4 PCBs, base drive requirements for <−500 mV VCEsat, and compatibility with SOT23 reflow footprints per Fig. 15.

Technical Context

This PNP transistor operates with open-base VCEO = −40 V and supports peak ICM = −2 A for ≤1 ms pulses. Its DC current gain hFE reaches 160 at −1 A (pulsed), and VBEsat remains ≤−1.1 V at −1 A/−50 mA drive - confirming robust turn-on under high-current switching loads.

Thermal performance is defined for two mounting conditions: Rth(j-a) = 417 K/W (standard SOT23 footprint) and 278 K/W (enhanced 1 cm² collector pad). Transient thermal impedance curves (Fig. 2–3) validate safe operation under repetitive 300 µs pulses with duty cycles ≤0.02.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V - Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in supply-line switching.
IC −1 A continuous - Rated DC collector current; supports sustained load control in handheld device power rails.
RCEsat 300–500 mΩ at −500 mA/−50 mA - Low saturation resistance enables <−150 mW conduction loss at 500 mA, reducing thermal stress.
hFE 160 min at −1 A/−50 mA (pulsed) - Ensures reliable saturation with modest base drive, easing MCU GPIO interface design.
VCEsat ≤−500 mV at −1 A/−100 mA (pulsed) - Confirmed low voltage drop preserves battery voltage headroom in portable equipment.
fT 150 MHz - Supports fast switching (ton = 41 ns, toff = 260 ns) for PWM-driven backlight dimming up to ~1 MHz.
AEC-Q101 Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and ESD, enabling use in infotainment and body control modules.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, standard footprint per Fig. 15.

Pin/Terminal Circuit Role Design Meaning
1 - B Base Control input requiring negative current (−50 mA typical) to saturate; connected to MCU GPIO or driver stage.
2 - E Emitter Common reference node tied to positive rail in high-side switch configuration; carries full load current.
3 - C Collector Switched output node connected to load; requires thermal pad area (1 cm² recommended) for 450 mW Ptot operation.

Key Features

Feature Design Value
Low VCEsat ≤−500 mV at −1 A ensures minimal voltage drop and heat generation in battery-sensitive applications.
High hFE at high IC 160 minimum at −1 A enables direct drive from 3.3 V MCUs without external amplification.
Robust thermal rating 150 °C max junction temperature and validated derating curves support operation in sealed enclosures.
AEC-Q101 qualification Validated for automotive ambient ranges (−40 °C to +125 °C) and reliability stress tests.
SOT23 footprint compatibility Standard 3-pin layout aligns with IPC-7351B land pattern, enabling drop-in replacement in existing designs.

Applications

Mobile Phone Power Management LCD Backlight Control

Use Scenario: Switching main battery voltage to camera module or USB port power path.

IC Role / Device Role / Timing Role: High-side PNP load switch controlling 3.7 V Li-ion rail with fast turn-off (toff = 260 ns) to prevent shoot-through.

Use Value: 300 mΩ RCEsat limits conduction loss to <150 mW at 500 mA, extending battery runtime by >2% versus standard transistors.

Use Scenario: PWM dimming of white LED strings in smartphone displays.

IC Role / Device Role / Timing Role: Current-sinking switch modulating LED current at 1–5 kHz with minimal VCEsat ripple.

Use Value: 150 MHz fT and 41 ns ton ensure clean square-wave edges, eliminating visible flicker at 100 Hz frame rates.

Automotive Body Control Module Handheld Medical Device Power Sequencing

Use Scenario: Enabling 12 V accessory circuits (e.g., interior lighting) with reverse-polarity protection.

IC Role / Device Role / Timing Role: Reverse-battery protected high-side switch using emitter-follower topology with −40 V VCEO margin.

Use Value: AEC-Q101 qualification and −65 °C to +150 °C Tstg/Tj range guarantee operation across automotive thermal cycles.

Use Scenario: Controlled power-up sequence for sensor analog front-end and digital controller in portable ultrasound units.

IC Role / Device Role / Timing Role: Precision timing-controlled enable switch with <100 nA ICEO leakage preserving standby current budget.

Use Value: ≤−100 nA ICEO at 25 °C ensures <1 µA total system leakage during sleep mode, meeting 72-hour battery hold requirement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS12201LT1G VCEO = −20 V, RCEsat = 450 mΩ @ −500 mA - lower voltage rating and higher saturation resistance. Restricted to ≤3.3 V logic-supplied loads; unsuitable for 12 V automotive or 5 V USB-PD paths. Select only when board space allows larger SOT-23-3 footprint and system VCE never exceeds −15 V.
Diodes Incorporated DMMT5551-7-F hFE = 100 min @ −1 A, VCEsat = −600 mV @ −1 A - lower gain and higher saturation voltage than PBSS5140T. Requires higher base drive current (−150 mA vs −100 mA), increasing MCU GPIO stress and PCB trace losses. Prefer where cost sensitivity outweighs efficiency targets and thermal margin is ≥15 °C above ambient.

Compared with NSS12201LT1G and DMMT5551-7-F, PBSS5140T provides superior voltage margin (−40 V), lower RCEsat, and higher hFE, making it optimal for 5–12 V battery and automotive supply switching where thermal density and drive simplicity are critical.

Availability

PBSS5140T is available at Aetrix Electronics and suitable for mobile phone power management, LCD backlight control, automotive body control modules, and handheld medical device power sequencing requiring stable component supply across production lifecycles.

Supply support for PBSS5140T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with manufacturing rooted in process technology leadership and automotive-grade quality systems.

PBSS5140T belongs to Nexperia's "Low VCEsat Transistor" product line, engineered specifically for energy-efficient load switching in battery-powered and automotive electronics where thermal density and drive simplicity are critical.

FAQ

What is the maximum continuous collector current for PBSS5140T at 25 °C ambient?

The PBSS5140T supports −1 A continuous collector current (IC) at Tamb ≤ 25 °C with standard SOT23 mounting. Derating begins above 25 °C per Fig. 1, reaching zero at 75 °C for the standard footprint (417 K/W Rth(j-a)).

Is PBSS5140T suitable for high-frequency PWM switching above 100 kHz?

Yes - with fT = 150 MHz, ton = 41 ns, and toff = 260 ns, PBSS5140T supports clean switching up to 1 MHz. For stable operation, maintain IB ≥ −50 mA and limit duty cycle to ≤0.02 for 300 µs pulses to stay within RCEsat and thermal limits.

How does the AEC-Q101 qualification impact PBSS5140T's use in non-automotive applications?

AEC-Q101 qualification confirms extended temperature operation (−65 °C to +150 °C), enhanced ESD robustness (HBM ≥2 kV), and reliability under thermal cycling and high-temperature reverse bias - directly improving field lifetime in industrial, medical, and consumer applications exposed to harsh environments.

What is the recommended PCB layout for optimal thermal performance?

For 450 mW total power dissipation, mount PBSS5140T on FR4 with a 1 cm² copper pad connected to the collector (Pin 3) via multiple thermal vias. Use the wave soldering footprint (Fig. 16) or reflow footprint (Fig. 15); avoid isolation gaps around the collector pad to maximize heat spreading.

PBSS5140T,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100mA, 5V
Power - Max:
450 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBSS5140T,215 FAQ

1.How can I place an order for PBSS5140T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5140T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5140T,215 reliable?

The price and inventory of PBSS5140T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5140T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5140T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5140T,215 transactions.

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4.How is shipping managed for PBSS5140T,215?

PBSS5140T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5140T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5140T,215?

For technical support, including PBSS5140T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5140T,215 requirements.

6.How does Aetrix verify that PBSS5140T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5140T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5140T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5140T,215?

All PBSS5140T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5140T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5140T,215 part is unused and in its original packaging.

Return procedure for PBSS5140T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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