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Nexperia USA Inc. PBSS5160QAZ

Part No.:
PBSS5160QAZ
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixPBSS5160QAZ.pdf
Description:
TRANS PNP 60V 1A DFN1010D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,895

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Product details

Overview

PBSS5160QAZ from Nexperia is a PNP low VCEsat (BISS) transistor in DFN1010D-3 (SOT1215) package, designed for high-efficiency load switching in space-constrained applications. It delivers −60 V VCEO, −1 A continuous IC, 225–330 mΩ RCEsat at −1 A/−100 mA drive, and AEC-Q101 qualification for automotive power management circuits.

For engineers reviewing the PBSS5160QAZ datasheet, PBSS5160QAZ pinout, PBSS5160QAZ application, or PBSS5160QAZ equivalent, this page provides verified technical context, validated pin functions, real-world use cases in battery-driven and charging systems, and confirmed alternatives with documented parameter-level differences.

Technical Context

This BISS transistor uses a breakthrough small-signal structure optimized for minimal saturation voltage under high-current switching. Its PNP configuration enables high-side load control with fast turn-on (ton = 50 ns) and controlled turn-off (toff = 350 ns) using standard base drive levels.

Thermal performance is defined across five PCB mounting conditions: Rth(j-a) ranges from 125 K/W (4-layer FR4, 1 cm² collector pad) to 385 K/W (single-sided FR4, standard footprint), enabling precise thermal design for compact power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −60 V - Maximum safe collector-emitter blocking voltage in open-base condition
IC −1 A - Continuous DC collector current rating at Tamb = 25 °C
RCEsat 225–330 mΩ - Low on-resistance at −1 A/−100 mA drive, reducing conduction loss and heat generation
hFE 85–125 - High DC current gain at −1 A, enabling efficient base drive with low IB
toff 350 ns - Turn-off time under −10 V VCC, −0.5 A IC, ±25 mA base drive, supporting kHz-range switching
AEC-Q101 Qualified - Validated for automotive-grade reliability per stress test requirements for discrete semiconductors
Ptot (4L FR4, 1 cm²) 1000 mW - Maximum power dissipation with 4-layer board and dedicated collector thermal pad

Pinout & Package

DFN1010D-3 (SOT1215) is a leadless, ultra-small surface-mount plastic package with solderable side pads and thermal enhancement. Dimensions: 1.05 × 1.05 × 0.325 mm (L × W × H), 0.4 mm pitch, 3 active terminals plus exposed collector pad (Pin 4).

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input; accepts −100 mA pulsed base current for full saturation at −1 A collector load
2 Emiter (E) Current source terminal; connected to higher potential rail in high-side switch configurations
3 Collector (C) Main current path output; electrically and thermally tied to Pin 4 (exposed pad) for enhanced thermal transfer
4 Collector (C) / Thermal Pad Exposed copper pad on underside; must be soldered to PCB copper pour for rated power dissipation and thermal stability

Key Features

Feature Design Value
Low VCEsat −225 to −330 mV at −1 A/−100 mA ensures <100 mW conduction loss, critical for battery runtime extension
Solderable side pads Enables visual inspection and reliable reflow soldering without tombstoning on 0.4 mm pitch layout
High hFE at high IC 85–125 at −1 A reduces required base drive current and driver-stage component count
Ultra-compact footprint 1.05 mm × 1.05 mm area saves >60% board space vs. SOT23, ideal for wearables and portable chargers
AEC-Q101 qualification Validates robustness for automotive body electronics including seat control, lighting, and sensor power rails

Applications

Automotive Body Control Module USB-C Power Delivery Switch

Use Scenario: Controlling 12 V loads such as interior lighting, window lift motors, and HVAC actuators in modern vehicle ECUs.

IC Role / Device Role / Timing Role: High-side PNP switch managing up to 1 A load current with minimal voltage drop and thermal rise.

Use Value: Enables direct microcontroller GPIO drive without external level-shifting, reducing BOM cost and PCB layer count.

Use Scenario: Enabling/disabling VBUS power path in portable USB-C accessories requiring reverse-polarity protection and low-loss switching.

IC Role / Device Role / Timing Role: Loadswitch providing fast, low-RCEsat connection between power source and downstream PD controller IC.

Use Value: Maintains ≥4.75 V at load under 1 A due to sub-330 mΩ on-resistance, preserving USB-C specification compliance.

Smartphone Battery Protection Circuit Wireless Charging Transmitter Power Stage

Use Scenario: Isolating main Li-ion battery from system during overcurrent or thermal fault events in mobile device PMIC subsystems.

IC Role / Device Role / Timing Role: Fast-acting, low-leakage (ICES ≤ −100 nA) cutoff switch placed between battery anode and system ground return.

Use Value: Prevents parasitic drain during storage while supporting rapid recovery (<500 ns toff) after fault clearance.

Use Scenario: Driving resonant tank gate signals or auxiliary power rails in Qi-compliant 15 W transmitter modules.

IC Role / Device Role / Timing Role: Synchronous rectifier or bias supply switch operating at 100–200 kHz with low switching loss.

Use Value: Delivers fT = 100–150 MHz and tr/tf ≤ 35/50 ns, ensuring clean edge integrity in high-frequency power control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PBSS5140QAZ Lower VCEO (−40 V) and higher RCEsat (350–520 mΩ); same package and AEC-Q101 grade Suitable only for ≤36 V systems; less efficient at 1 A, requiring larger thermal margin Select when cost sensitivity outweighs voltage headroom and efficiency needs in 12–24 V automotive modules
DMT3005LPSQ-7 PNP MOSFET (not BJT); −30 V VDS, 1.5 A ID, 190 mΩ RDS(on); no base current requirement Eliminates base drive circuitry but lacks linear gain control; requires gate pull-up for high-side use Prefer for zero-base-current designs where gate drive voltage matches system rail and fast switching dominates

Compared with PBSS5160QAZ, PBSS5140QAZ trades voltage rating and efficiency for lower cost in 24 V systems, while DMT3005LPSQ-7 replaces bipolar operation with MOSFET simplicity-offering lower on-resistance but losing analog gain behavior and requiring different gate biasing.

Availability

PBSS5160QAZ is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, and portable battery protection circuits requiring stable component supply, AEC-Q101 assurance, and ultra-compact thermal management.

Supply support for PBSS5160QAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBSS5160QAZ belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-saturation-voltage switching in space- and thermally-constrained applications such as automotive power distribution and portable power management.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (IB) is −0.3 A per datasheet limiting values. For reliable long-term operation at ambient temperatures up to 85 °C, sustained base current should not exceed −100 mA-matching the −1 A collector drive condition used in RCEsat characterization.

Can PBSS5160QAZ be used in a low-side switch configuration?

No-it is a PNP transistor and inherently suited for high-side switching where emitter connects to the positive rail. Using it as a low-side switch would require reverse-biasing the emitter-base junction beyond its −7 V VEBO limit, risking permanent damage.

How does the exposed collector pad (Pin 4) affect thermal design?

Pin 4 is electrically and thermally connected to the collector and must be soldered to a minimum 1 cm² copper pour on inner or outer PCB layers. Without this connection, Ptot derates from 1000 mW to 325 mW, increasing junction temperature by >60 °C at full load.

Is PBSS5160QAZ pin-compatible with its NPN complement PBSS4160QA?

No-PBSS4160QA uses identical DFN1010D-3 (SOT1215) packaging but with reversed pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. Direct substitution requires PCB layout revision and signal polarity adjustment.

PBSS5160QAZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
460mV @ 50mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
85 @ 1A, 2V
Power - Max:
325 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1010D-3

PBSS5160QAZ FAQ

1.How can I place an order for PBSS5160QAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5160QAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5160QAZ reliable?

The price and inventory of PBSS5160QAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5160QAZ is usually 5 days.

3.What payment methods are accepted for PBSS5160QAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5160QAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5160QAZ?

PBSS5160QAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5160QAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5160QAZ?

For technical support, including PBSS5160QAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5160QAZ requirements.

6.How does Aetrix verify that PBSS5160QAZ is sourced from the original manufacturer or authorized distributors?

All PBSS5160QAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5160QAZ meets industry standards.

7.What is the process for return or replacement of PBSS5160QAZ?

All PBSS5160QAZ units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5160QAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5160QAZ part is unused and in its original packaging.

Return procedure for PBSS5160QAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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