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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5160U,115

Name: PBSS5160U,115
Brand: Nexperia USA Inc.
SKU: PBSS5160U,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5160U,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: PBSS5160U,115.pdf

Description:: TRANS PNP 60V 0.7A SOT-323

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Product details

Overview

PBSS5160U,115 from Nexperia is a PNP low V_CEsat transistor in SOT323 (SC-70) package, rated for −60 V V_CEO, −1 A continuous collector current, and 255–340 mΩ R_CEsat at −1 A/−100 mA drive. It serves as a high-efficiency high-voltage switch in DC-DC converters, MOSFET gate drivers, and motor control circuits where minimal conduction loss and compact PCB footprint are critical.

For engineers reviewing the PBSS5160U,115 datasheet, PBSS5160U,115 pinout, PBSS5160U,115 application, or PBSS5160U,115 equivalent, key selection criteria include verified −60 V blocking capability, sub-340 mΩ saturation resistance under pulsed −1 A load, thermal resistance of 301 K/W on ceramic PCB, automotive-qualified AEC-Q101 status, and SC-70 pin compatibility with space-constrained layouts.

Technical Context

This PNP bipolar junction transistor uses epitaxial base technology to achieve high h_FE (100–160 at −1 A) and low V_CEsat (−255 to −340 mV) simultaneously. Its optimized doping profile and thin epitaxial layer reduce minority-carrier storage time, enabling fast switching with t_on = 41 ns and t_off = 260 ns under defined test conditions.

The device operates within a −65 °C to +150 °C junction temperature range and supports peak pulse currents up to −2 A (t_p ≤ 1 ms). Its thermal design is validated for three PCB mounting configurations: FR4 standard, FR4 with 1 cm² collector pad, and Al₂O₃ ceramic-delivering R_th(j-a) values of 500 K/W, 357 K/W, and 301 K/W respectively.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Maximum safe collector-emitter voltage with base open; enables use in 48 V and higher DC bus systems.
I_C	−1 A continuous - Rated collector current at T_amb ≤ 25 °C on ceramic PCB; supports sustained switching in motor drivers.
R_CEsat	255–340 mΩ - Measured at −1 A I_C, −100 mA I_B, pulsed; directly determines conduction power loss (P = I²R).
h_FE	100–160 - DC current gain at −1 A I_C, −5 V V_CE; ensures reliable saturation with modest base drive.
t_off	260 ns - Turn-off time with −0.5 A I_C, ±25 mA base drive; supports >1 MHz switching in high-frequency DC-DC stages.
f_T	150–185 MHz - Transition frequency at −10 V V_CE, −50 mA I_C; confirms high-speed small-signal capability beyond switching use.
AEC-Q101	Qualified - Certified for automotive applications per Stress Test Qualification for Discrete Semiconductors.

Pinout & Package

Package: SOT323 (SC-70), surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch. Optimized for reflow soldering with standardized footprint per Figure 16.

Pin	Circuit Role	Design Meaning
1	Base (B)	Control terminal; requires −100 mA drive for full saturation at −1 A collector current.
2	Emiter (E)	Current source node; connected to higher potential rail in PNP high-side switch configuration.
3	Collector (C)	Load connection node; electrically tied to PCB thermal pad in ceramic-mount designs for improved heat dissipation.

Key Features

Feature	Design Value
Low V_CEsat	−255 to −340 mV at −1 A/−100 mA - Reduces conduction loss by >40% vs. standard PNP transistors, lowering thermal stress in sealed enclosures.
High h_FE at high I_C	100–160 at −1 A - Enables efficient base drive circuitry with minimal current sourcing requirement from controller ICs.
Small SOT323 footprint	2.0 mm × 1.25 mm - Saves >65% PCB area vs. SOT23; ideal for ultra-compact power modules and multi-rail PMIC interfaces.
Automotive qualification	AEC-Q101 compliant - Validated for temperature cycling, humidity, and mechanical shock; suitable for engine control and body electronics.
Thermal performance	R_th(j-sp) = 150 K/W - Low junction-to-solder-point resistance enables direct thermal coupling to copper pour without external heatsink.

Applications

High-Voltage DC-DC Conversion

High-Voltage MOSFET Gate Driving

Use Scenario: Step-down regulation from 48 V or 60 V input rails in telecom and industrial power supplies.

IC Role / Device Role / Timing Role: PNP high-side switch controlling gate voltage of N-channel power MOSFETs in synchronous buck topologies.

Use Value: Sub-340 mΩ R_CEsat limits gate-drive power loss to <15 mW at 1 A peak, improving overall converter efficiency by 0.4–0.7%.

Use Scenario: Level-shifting and active pull-down of high-side N-MOSFET gates in half-bridge motor drivers.

IC Role / Device Role / Timing Role: Fast-turn-off PNP switch discharging gate capacitance during dead-time intervals.

Use Value: 260 ns t_off ensures clean gate voltage transitions, reducing shoot-through risk in 100 kHz–1 MHz PWM operation.

High-Voltage Motor Control

High-Voltage Power Switches

Use Scenario: Directional control and braking in 24–48 V brushed DC motors used in HVAC actuators and power tools.

IC Role / Device Role / Timing Role: Low-loss PNP switch in H-bridge upper-leg configuration, handling bidirectional current up to 1 A.

Use Value: −60 V V_CEO withstands inductive kickback spikes up to 55 V, eliminating need for external clamping diodes.

Use Scenario: Solid-state replacement for electromechanical relays in fan speed control and solenoid actuation circuits.

IC Role / Device Role / Timing Role: High-reliability discrete switch interfacing microcontroller GPIOs to 36–60 V loads.

Use Value: AEC-Q101 qualification and 150 °C T_j rating ensure stable operation in under-hood automotive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LPS-7	−30 V V_CEO, −5 A I_C, SOT23 package, R_CEsat = 45 mΩ - higher current, lower voltage rating.	Not suitable for >40 V systems; better for high-current, low-voltage logic-level switching.	Select when load current exceeds 1.5 A and bus voltage stays below 36 V.
PBSS5350U,115	−50 V V_CEO, −0.5 A I_C, same SOT323 package, R_CEsat = 420 mΩ - lower voltage, lower current, higher saturation resistance.	Lower power dissipation margin; limited to <0.5 A continuous loads.	Choose only if system voltage is capped at 40 V and thermal budget allows higher V_CEsat.

Compared with DMT3005LPS-7 and PBSS5350U,115, PBSS5160U,115 uniquely balances −60 V blocking, −1 A current, and sub-340 mΩ R_CEsat in the smallest SOT323 footprint-making it optimal for space-constrained 48 V automotive and industrial power switches where both voltage headroom and thermal efficiency are critical.

Availability

PBSS5160U,115 is available at Aetrix Electronics and suitable for high-voltage DC-DC conversion, MOSFET gate driving, and automotive motor control requiring stable component supply across production lifecycles.

Supply support for PBSS5160U,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with manufacturing and R&D centers across Asia, Europe, and the Americas.

PBSS5160U,115 belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for energy-efficient high-voltage switching in automotive, industrial, and computing power management systems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current (I_B) is −300 mA per datasheet Table 5. However, for reliable continuous operation at −1 A collector current, the recommended base drive is −100 mA (IC/IB = 10), ensuring deep saturation while avoiding excessive base power dissipation and thermal runaway. Exceeding −100 mA does not significantly improve V_CEsat but increases base driver losses and junction temperature.

Can PBSS5160U,115 be used in linear regulator applications?

No-it is not characterized or qualified for linear operation. The datasheet specifies only switching parameters (t_on, t_off, f_T) and saturation characteristics. Linear use would exceed safe operating area (SOA) limits due to uncontrolled power dissipation at intermediate V_CE and I_C combinations, risking thermal failure. It is strictly intended for switched-mode applications.

How does the SOT323 package affect thermal performance compared to SOT23?

The SOT323 package has a smaller body (2.0 × 1.25 mm vs. 2.9 × 1.3 mm) and thinner profile (0.95 mm vs. 1.1 mm), resulting in higher thermal resistance-R_th(j-a) is 301 K/W on ceramic PCB versus ~250 K/W for comparable SOT23 devices. This necessitates careful PCB layout: use ≥1 cm² copper pour under pin 3 (collector) and minimize trace length to maintain junction temperature below 150 °C at full load.

Is the marking code '53%' consistent across all production lots?

Yes-the marking '53%' is standardized per Table 4, where '%' is a placeholder for the manufacturing site code (e.g., '53A' for one fab, '53B' for another). All authentic PBSS5160U,115 units carry this two-character prefix followed by a single alphanumeric site identifier, enabling full traceability to wafer lot and assembly location per Nexperia's quality system.

PBSS5160U,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 340mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 500mA, 5V

Power - Max:: 415 mW

Frequency - Transition:: 185MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

PBSS5160U,115 FAQ

1.How can I place an order for PBSS5160U,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5160U,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5160U,115 reliable?

The price and inventory of PBSS5160U,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5160U,115 is usually 5 days.

3.What payment methods are accepted for PBSS5160U,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5160U,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5160U,115?

PBSS5160U,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5160U,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5160U,115?

For technical support, including PBSS5160U,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5160U,115 requirements.

6.How does Aetrix verify that PBSS5160U,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5160U,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5160U,115 meets industry standards.

7.What is the process for return or replacement of PBSS5160U,115?

All PBSS5160U,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5160U,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5160U,115 part is unused and in its original packaging.

Return procedure for PBSS5160U,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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