Nexperia USA Inc. PBSS5160V,115

Overview

PBSS5160V,115 from NXP Semiconductors is a PNP low V_CEsat Breakthrough in Small Signals (BISS) transistor in SOT666 package, rated for −60 V V_CEO, −1 A DC collector current, and 220–330 mΩ equivalent on-resistance at I_C = −1 A / I_B = −100 mA. It serves as a high-efficiency switching element in low-voltage load control circuits such as relay drivers and LED supply switches.

For engineers reviewing the PBSS5160V,115 datasheet, PBSS5160V,115 pinout, PBSS5160V,115 application, or PBSS5160V,115 equivalent, key selection criteria include verified V_CEsat ≤ −330 mV at full-rated current, thermal resistance R_th(j-a) = 250 K/W with enhanced pad, and confirmed SOT666 6-lead pin mapping for PCB layout validation.

Technical Context

This BISS transistor uses optimized PNP epitaxial base design to achieve low saturation voltage while maintaining high DC current gain (h_FE = 100–160 at I_C = −1 A). Its structure enables fast switching with t_on = 41 ns and t_off = 260 ns under −10 V V_CC, −0.5 A I_C conditions.

It operates across −65 °C to +150 °C junction temperature range, supports peak collector current up to −2 A for 1 ms pulses, and delivers stable performance with V_BEsat = −0.95 to −1.1 V at I_C = −1 A / I_B = −50 mA - critical for accurate base drive sizing in industrial power stages.

Key Specifications

Pinout & Package

SOT666 plastic surface-mounted package with 6 leads, 4 mm tape-and-reel packing (3000 pcs per reel), footprint compatible with JEDEC-standard 1.7 × 1.3 mm outline and 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat switching applications.

Compared with BCP52 and BCX52, PBSS5160V,115 delivers 55–70% lower V_CEsat, 25% higher current rating, and 40% smaller footprint - making it the preferred choice for modern automated, space-constrained, and thermally sensitive PNP switching designs.

Availability

PBSS5160V,115 is available at Aetrix Electronics and suitable for automotive interior lighting control, industrial relay driver stages, telecom DC-DC converter bias supplies, and consumer appliance motor drivers requiring stable component supply and consistent SOT666 packaging.

Supply support for PBSS5160V,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PBSS5160V belongs to NXP's BISS transistor product line, engineered specifically to replace legacy medium-power PNP transistors with superior saturation performance and surface-mount scalability in space- and efficiency-critical applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is −300 mA per datasheet Table 5. However, for reliable long-term operation at I_C = −1 A, the recommended base drive is −100 mA - matching the test condition for specified V_CEsat and ensuring h_FE remains within 100–160 range without thermal runaway.

Can PBSS5160V,115 be used in high-frequency PWM applications above 100 kHz?

Yes - with f_T = 150–220 MHz and t_off = 260 ns, it supports PWM frequencies up to 500 kHz in low-duty-cycle switching. Layout must minimize base-emitter loop inductance and use local 100 nF decoupling near pins 3 and 4 to maintain switching integrity.

Is thermal pad connection required for full 1 A current rating?

Yes - the 500 mW P_tot rating at T_amb ≤ 25 °C assumes a 1 cm² copper collector mounting pad (Table 5 footnote [2]). Without it, P_tot drops to 300 mW and current must be derated to ~700 mA at 25 °C ambient to avoid exceeding T_j = 150 °C.

How does PBSS5160V compare to its NPN counterpart PBSS4160V in switching symmetry?

Both share identical V_CEsat, R_CEsat, and switching time specs (t_on/t_off) when operated at matched I_C/I_B ratios. This enables true complementary push-pull stages with balanced rise/fall times and minimal shoot-through risk in H-bridge or class-B amplifier designs.