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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5220V,115

Name: PBSS5220V,115
Brand: Nexperia USA Inc.
SKU: PBSS5220V,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5220V,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SOT-563, SOT-666

Datasheet:: PBSS5220V,115.pdf

Description:: TRANS PNP 20V 2A SOT-666

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5220V,115 from NXP Semiconductors is a PNP low-V_CEsat Breakthrough In Small Signal (BISS) transistor in SOT666 package, designed for high-efficiency switching in compact DC-DC converters and MOSFET gate drivers. It delivers −2 A continuous collector current, −20 V V_CEO, 140–210 mΩ R_CEsat at −1 A/−100 mA drive, and operates up to 150 °C junction temperature.

For engineers reviewing the PBSS5220V,115 datasheet, PBSS5220V,115 pinout, PBSS5220V,115 application, or PBSS5220V,115 equivalent, key selection criteria include verified low saturation resistance, dual-collector thermal path capability, SOT666 footprint compatibility, and validated performance in motor control and portable power switches under −40 °C to +100 °C ambient conditions.

Technical Context

This BISS transistor uses a proprietary epitaxial structure enabling lower V_CEsat and higher h_FE at high I_C versus conventional PNP transistors. Its four-terminal configuration (pins 1/2/5/6 = collector, pin 3 = base, pin 4 = emitter) supports distributed heat dissipation across multiple collector pads on FR4 or ceramic PCBs.

Switching performance is characterized with t_d = 8 ns, t_r = 34 ns, t_s = 140 ns, and t_f = 45 ns under −1 A/−50 mA drive conditions. The device exhibits f_T = 150–185 MHz and C_c = 15–20 pF, confirming suitability for medium-frequency switching applications up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations.
I_C	−2 A - Continuous DC collector current rating; enables direct driving of small motors or charging circuits without external heatsinking.
R_CEsat	140–210 mΩ at −1 A/−100 mA - Low saturation resistance reduces conduction loss and self-heating in battery-powered systems.
h_FE	155–220 at −1 A/−100 mA - High current gain ensures reliable saturation with modest base drive, simplifying driver circuit design.
P_tot	0.9 W on Al₂O₃ ceramic PCB - Enables higher power density than standard SOT23/SOT323 alternatives in space-constrained layouts.
f_T	150–185 MHz - Supports fast switching in DC-DC controllers and gate drivers operating up to ~200 kHz with margin.
C_c	15–20 pF - Low collector capacitance minimizes switching losses and improves EMI behavior in high-frequency operation.

Pinout & Package

SOT666 plastic surface-mount package (2.0 mm pitch, 1.7 × 1.5 mm body), featuring six leads with four dedicated collector terminals for enhanced thermal and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector	Four parallel collector connections reduce effective bond wire inductance and improve thermal spreading across PCB copper area.
3	Base	Single base terminal for control input; requires −100 mA drive to achieve full saturation at −1 A I_C.
4	Emiter	Emitter reference node; connects to system ground or high-side rail return path depending on topology.

Key Features

Feature	Design Value
Low V_CEsat	−140 to −210 mV at −1 A/−100 mA - Reduces power loss by >40% vs. standard PNP transistors, extending battery life in portable devices.
High I_C capability	−2 A continuous / −4 A pulsed - Supports direct switching of 5 V/2 A loads without paralleling or heatsinks in space-limited designs.
Multi-collector thermal path	Four collector pins bonded to shared die region - Enables 0.9 W dissipation on ceramic PCB, doubling thermal capacity vs. SOT23 equivalents.
High h_FE at high I_C	155–220 at −1 A - Maintains strong saturation with minimal base current, reducing driver stage complexity and quiescent power.
Optimized for reflow only	Specified for lead-free reflow soldering per JEDEC J-STD-020 - Ensures manufacturability in modern SMT lines without wave or hand-solder risks.

Applications

DC-DC Conversion

MOSFET Gate Driving

Use Scenario: Step-down converter in USB-C PD power banks using synchronous rectification.

IC Role / Device Role / Timing Role: High-side PNP switch controlling gate voltage of N-channel power MOSFET during dead-time intervals.

Use Value: Low R_CEsat minimizes gate drive loss; fast t_on/t_off (42/185 ns) enables precise timing control below 500 ns dead time.

Use Scenario: Level-shifting gate driver for half-bridge motor control ICs in BLDC fans.

IC Role / Device Role / Timing Role: Active pull-down element sinking gate charge from high-side MOSFET during turn-off transitions.

Use Value: Four-collector layout lowers thermal impedance, sustaining −2 A peak sink current without derating at 85 °C ambient.

Motor Control

Portable Charging Circuits

Use Scenario: H-bridge current limit switch in handheld power tools with brushed DC motors.

IC Role / Device Role / Timing Role: Current-sense shunt bypass transistor activated during overcurrent events to clamp motor voltage.

Use Value: −20 V V_CEO withstands inductive kickback; 150 °C T_j rating allows operation near motor housing without thermal shutdown.

Use Scenario: Load switch enabling/disabling USB 5 V input path in wireless earbud charging cases.

IC Role / Device Role / Timing Role: Low-loss series pass element placed between input connector and Li-ion charger IC.

Use Value: 140 mΩ R_CEsat limits voltage drop to <140 mV at 1 A, preserving >97% efficiency and minimizing thermal rise on 2-layer FR4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A	Higher V_CEsat (−500 mV typical at −500 mA), lower I_C (−800 mA), TO-92 package	Limited to sub-500 mA loads; unsuitable for 2 A motor or charging paths	Select only for low-current signal switching where cost outweighs efficiency.
MBT3906DW1T1G	Dual PNP in SOT-363; each device rated −200 mA, V_CEO = −40 V, R_CEsat = 400 mΩ	Requires paralleling for 2 A; higher total R_CEsat and thermal resistance than single PBSS5220V	Prefer when dual-channel logic-level inversion is needed, not for high-current switching.

Compared with PN2222A and MBT3906DW1T1G, PBSS5220V,115 uniquely combines 2 A current capability, sub-210 mΩ saturation resistance, and multi-collector thermal design in a 1.7 × 1.5 mm footprint-making it the only viable option for space-constrained, high-efficiency PNP switching above 1 A.

Availability

PBSS5220V,115 is available at Aetrix Electronics and suitable for DC-DC conversion, motor control, and portable charging circuits requiring stable component supply and long-term industrial availability.

Supply support for PBSS5220V,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PBSS5220V belongs to NXP's BISS transistor product line, engineered specifically to replace conventional PNP devices in high-efficiency, high-density power management applications where low V_CEsat and thermal robustness are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (I_B) is −0.3 A per the datasheet limiting values table. However, for reliable long-term operation at −2 A collector current, NXP specifies −100 mA base drive as sufficient for full saturation. Exceeding −100 mA provides no significant V_CEsat improvement and increases driver power loss unnecessarily.

Can PBSS5220V,115 be used in linear regulator applications?

No-it is optimized for switching operation, not linear regulation. Its R_CEsat and thermal characteristics assume pulsed or saturated duty cycles. Continuous linear operation would exceed P_tot limits even at moderate currents due to high V_CE × I_C product, risking thermal runaway and premature failure.

Is the SOT666 package compatible with standard SOT-23 pick-and-place equipment?

Yes-SOT666 shares the same 2.0 mm lead pitch and overall footprint envelope as industry-standard SOT-23-6 variants. Placement accuracy requirements match IPC-7351 Class B, and the 0.18 mm pin thickness supports standard vacuum nozzles. Reflow profile must follow NXP's specified lead-free ramp-soak-reflow cycle.

How does the four-collector configuration affect PCB layout?

All four collector pins (1, 2, 5, 6) must be connected to the same net-ideally a large copper pour-to realize the full thermal benefit. The recommended footprint (Fig 14) allocates 0.55 mm × 0.25 mm solder lands per collector pin, with 0.6 mm spacing. Splitting collectors across separate nets invalidates the 0.9 W power rating and increases R_CEsat by up to 35%.

PBSS5220V,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 155 @ 1A, 2V

Power - Max:: 900 mW

Frequency - Transition:: 185MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-666

PBSS5220V,115 FAQ

1.How can I place an order for PBSS5220V,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5220V,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5220V,115 reliable?

The price and inventory of PBSS5220V,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5220V,115 is usually 5 days.

3.What payment methods are accepted for PBSS5220V,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5220V,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5220V,115?

PBSS5220V,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5220V,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5220V,115?

For technical support, including PBSS5220V,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5220V,115 requirements.

6.How does Aetrix verify that PBSS5220V,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5220V,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5220V,115 meets industry standards.

7.What is the process for return or replacement of PBSS5220V,115?

All PBSS5220V,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5220V,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5220V,115 part is unused and in its original packaging.

Return procedure for PBSS5220V,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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