Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5230T,215

Name: PBSS5230T,215
Brand: Nexperia USA Inc.
SKU: PBSS5230T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PBSS5230T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5230T,215.pdf

Description:: TRANS PNP 30V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PBSS5230T from Nexperia is a PNP low V_CEsat transistor in SOT23 package, rated for −30 V V_CEO, −2 A continuous collector current, and 160–220 mΩ R_CEsat at −500 mA/−50 mA drive; used as a high-efficiency load switch in battery-powered LED drivers and DC-DC converters.

For engineers reviewing the PBSS5230T datasheet, PBSS5230T pinout, PBSS5230T application, or PBSS5230T equivalent, key selection criteria include verified V_CEsat ≤ 240 mV at −2 A/−200 mA, thermal resistance of 260 K/W with 1 cm² collector pad, and SOT23-compatible footprint per Fig. 8 and Fig. 9.

Technical Context

This PNP bipolar transistor operates with base-emitter turn-on voltage of −0.75 V at −100 mA and delivers DC current gain (h_FE) of 100–180 at −2 A/−200 mA drive. Its low saturation voltage enables minimal conduction loss in high-current switching paths.

Designed for pulsed operation (t_p ≤ 300 µs, duty δ ≤ 0.02), it supports peak collector current up to −3 A and maintains stable R_CEsat across −55 °C to +150 °C junction temperature range, with thermal resistance dependent on PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - maximum safe collector-emitter voltage with open base; defines off-state blocking capability in high-side switch configurations
I_C	−2 A - continuous DC collector current rating; determines steady-state load handling capacity without derating
V_CEsat	−240 to −350 mV at I_C = −2 A, I_B = −200 mA - directly sets conduction power loss (P_cond ≈ I_C × V_CEsat) in saturated switching
R_CEsat	160–220 mΩ at I_C = −500 mA, I_B = −50 mA - quantifies on-resistance behavior under moderate drive; critical for low-voltage rail efficiency
h_FE	100–180 at I_C = −2 A, V_CE = −2 V - ensures sufficient current amplification for reliable base drive design with standard logic-level sources
f_T	100–200 MHz - indicates usable bandwidth for medium-speed switching (e.g., PWM up to ~10 MHz with margin)
P_tot	480 mW at T_amb ≤ 25 °C with 1 cm² collector pad - defines maximum dissipation under specified PCB layout; limits thermal headroom in compact designs

Pinout & Package

SOT23 plastic surface-mounted package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pitch); thermally enhanced layout with dedicated collector pad per Fig. 8 and Fig. 9.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −50 mA to −200 mA drive for full saturation; polarity-sensitive for PNP operation
2	Emiter (E)	Common reference terminal tied to higher potential rail (e.g., battery +); carries full load current in high-side configuration
3	Collector (C)	Switched output node connected to load; must be routed to ≥1 cm² copper area for 260 K/W thermal performance

Key Features

Feature	Design Value
Low V_CEsat	≤ −240 mV at −2 A ensures <1.2 mW conduction loss per amp, reducing thermal stress in space-constrained battery systems
High I_C capability	−2 A continuous rating supports direct driving of LEDs, relays, and small motors without external current boosting
Thermally optimized SOT23	260 K/W R_th(j-a) with 1 cm² collector pad enables 480 mW dissipation-2× typical SOT23 limit for same footprint
Wide temperature operation	Specified performance from −55 °C to +150 °C junction temperature supports industrial and automotive-adjacent environments

Applications

DC-to-DC Conversion

Supply Line Switching

Use Scenario: Synchronous rectifier or active clamp in buck converter output stage operating from 3.3 V to 12 V input rails.

IC Role / Device Role / Timing Role: PNP high-side switch controlling energy transfer during low-duty-cycle phases; complements N-channel MOSFET or diode.

Use Value: 160–220 mΩ R_CEsat reduces conduction loss by >40% versus standard PNP transistors, improving efficiency at 1–2 A loads.

Use Scenario: Hot-swap control for USB-C PD power path or backup battery isolation in portable medical devices.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side load switch enabling controlled power-up/down sequencing.

Use Value: −30 V V_CEO withstands transient overvoltage events; −240 mV V_CEsat minimizes voltage drop during fault-free operation.

Battery Charger Control

LCD Backlight Driver

Use Scenario: Charge path management in single-cell Li-ion chargers where battery disconnect is required during termination or fault.

IC Role / Device Role / Timing Role: PNP-based ideal diode or charge enable switch placed between charger IC and battery terminal.

Use Value: −2 A rating handles full CC/CV charging current; low V_CEsat prevents voltage sag that could trigger premature charge termination.

Use Scenario: Constant-current driver for white LED strings in handheld instrumentation displays powered from 3.3 V supply.

IC Role / Device Role / Timing Role: Linear current sink configured with emitter resistor; driven by PWM controller via base.

Use Value: h_FE ≥ 100 at −2 A ensures stable current regulation with ±5% tolerance across temperature; low R_CEsat preserves headroom for 2–3 LED series stacks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS20201MR6T1G	V_CEO = −20 V, V_CEsat = −250 mV @ −1 A, SOT-23 package	Lower voltage rating limits use to ≤12 V systems; lower current rating reduces margin in 2 A DC-DC stages	Select when cost sensitivity outweighs 10 V headroom requirement and thermal budget allows higher R_CEsat
Diodes Incorporated DXT5230P-13	V_CEO = −30 V, V_CEsat = −300 mV @ −2 A, SOT-23 package, h_FE = 80–160	Higher V_CEsat increases conduction loss by ~25%; slightly lower h_FE may require stronger base drive	Choose for second-source assurance where 50 mV V_CEsat penalty is acceptable and footprint compatibility is mandatory

Compared with NSS20201MR6T1G and DXT5230P-13, PBSS5230T provides the lowest V_CEsat (−240 mV) and highest h_FE (100–180) at full −2 A load, delivering superior thermal performance and drive margin in high-efficiency, high-current PNP switching roles.

Availability

PBSS5230T is available at Aetrix Electronics and suitable for DC-to-DC conversion, supply line switching, and battery charger control requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PBSS5230T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

PBSS5230T belongs to Nexperia's Low V_CEsat Bipolar Transistor product line, engineered specifically for high-efficiency power switching in portable, battery-operated, and thermally constrained applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −300 mA per Table 5. For reliable continuous operation at −2 A collector current, the recommended base drive is −200 mA (IC/IB = 10), ensuring deep saturation while maintaining safe thermal margin within the 480 mW total power limit.

Can PBSS5230T replace an N-channel MOSFET in high-side switching?

No-it is a PNP bipolar transistor, not a MOSFET. It requires continuous base current to remain on (unlike MOSFET gate charge), and its V_CEsat is fixed by drive level rather than gate voltage. Use only where base drive circuitry and bipolar characteristics are acceptable.

Is PBSS5230T qualified for automotive applications?

No-per Revision History (Table 8), this version is non-automotive qualified. Nexperia offers automotive-qualified alternatives (e.g., PBSS5230T-Q) with AEC-Q101 testing and extended temperature validation; PBSS5230T is intended for industrial, consumer, and computing applications.

How does thermal resistance change with PCB layout?

R_th(j-a) drops from 417 K/W (standard FR4 footprint) to 260 K/W when the collector pad is expanded to 1 cm² tin-plated copper, per Table 6. This 38% improvement directly increases allowable power dissipation and extends safe operating area at elevated ambient temperatures.

PBSS5230T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 350mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 480 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5230T,215 FAQ

1.How can I place an order for PBSS5230T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5230T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5230T,215 reliable?

The price and inventory of PBSS5230T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5230T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5230T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5230T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5230T,215?

PBSS5230T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5230T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5230T,215?

For technical support, including PBSS5230T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5230T,215 requirements.

6.How does Aetrix verify that PBSS5230T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5230T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5230T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5230T,215?

All PBSS5230T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5230T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5230T,215 part is unused and in its original packaging.

Return procedure for PBSS5230T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…