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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5240T,215

Name: PBSS5240T,215
Brand: Nexperia USA Inc.
SKU: PBSS5240T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5240T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5240T,215.pdf

Description:: TRANS PNP 40V 2A TO-236AB

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Product details

Overview

PBSS5240T,215 from Nexperia is a PNP low V_CEsat transistor in SOT23 package, rated for −40 V V_CEO, −2 A I_C, and 140–220 mΩ R_CEsat at −500 mA/−50 mA drive; used in battery-powered motor drivers and DC/DC converter switching stages.

For engineers reviewing the PBSS5240T,215 datasheet, PBSS5240T,215 pinout, PBSS5240T,215 application, or PBSS5240T,215 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 PCBs, PNP polarity compatibility with supply-line control topologies, and SOT23 footprint constraints.

Technical Context

This PNP transistor operates as a high-current, low-loss switch in linear and saturated modes, with guaranteed V_CEsat ≤ −350 mV at −2 A/−200 mA drive and h_FE = 100–180 at −2 A. Its −40 V V_CEO rating supports 24 V industrial bus and 12 V automotive-derived systems.

Thermal design relies on validated R_th(j-a) = 260 K/W with 1 cm² collector pad, and device reliability is enhanced by reduced self-heating due to low R_CEsat and 150 °C T_j max rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V - maximum safe collector-emitter voltage with base open; enables use in 24 V supply rails with margin.
I_C	−2 A continuous - supports sustained load switching in motor drivers and lamp circuits without derating at 25 °C.
R_CEsat	140–220 mΩ at −500 mA/−50 mA - directly determines conduction loss (P_loss ≈ I² × R) in battery management switches.
h_FE	100–180 at −2 A - ensures sufficient current gain for direct microcontroller GPIO drive without external amplification.
V_BEsat	≤ −1.1 V at −2 A/−200 mA - defines minimum base drive voltage required to maintain saturation under full load.
T_j max	150 °C - sets upper junction temperature limit for thermal design; requires PCB copper area management per datasheet Fig. 6 & 9.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, single-sided FR4 PCB mount with standard footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −50 mA typical drive to saturate at −500 mA collector current; polarity-sensitive for PNP operation.
2	Emitter (E)	Common reference terminal tied to higher potential rail (e.g., battery +); carries full load current and defines V_EB bias path.
3	Collector (C)	Switched output node connected to load; thermally coupled to PCB pad-requires ≥1 cm² copper for 480 mW P_tot dissipation.

Key Features

Feature	Design Value
Low V_CEsat	≤ −350 mV at −2 A ensures <170 mW conduction loss, reducing thermal stress in compact battery-powered enclosures.
High I_C capability	−2 A continuous rating allows direct driving of 12 V/24 V solenoids, small DC motors, and LED arrays without external buffers.
Robust thermal performance	R_th(j-a) = 260 K/W with 1 cm² collector pad enables stable operation up to 85 °C ambient without heatsinking.
PNP complement pairing	Direct functional match to NPN PBSS4240T, enabling complementary push-pull or H-bridge designs with matched V_CEsat behavior.

Applications

Supply Line Switching

Battery Management

Use Scenario: High-side power switch controlling 12 V accessory rail in portable test equipment.

IC Role / Device Role / Timing Role: PNP transistor configured as active-low controlled high-side switch, turning on when base is pulled low relative to emitter.

Use Value: Low R_CEsat minimizes voltage drop (<350 mV at 2 A), preserving battery runtime and preventing brownout in downstream logic.

Use Scenario: Load disconnect circuit isolating Li-ion pack during overvoltage or thermal fault conditions.

IC Role / Device Role / Timing Role: Fast-acting series switch placed between battery+ and protection IC input, activated by MCU-controlled base drive.

Use Value: Verified −40 V V_CEO withstands pack transient spikes; −2 A rating covers peak charge/discharge currents without derating.

DC/DC Converter

Strobe Flash Unit

Use Scenario: Synchronous rectifier in non-isolated buck converter for USB-C PD power delivery module.

IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode in 3.3 V/5 V output stage, driven by gate controller.

Use Value: 140–220 mΩ R_CEsat reduces conduction loss by >40% vs. 450 mV Schottky, improving efficiency at 1–2 A loads.

Use Scenario: High-current flash capacitor discharge switch in DSLR camera auxiliary lighting module.

IC Role / Device Role / Timing Role: Pulsed PNP switch triggered by timing controller to dump stored energy into xenon tube within 10 µs.

Use Value: −3 A I_CM peak rating handles 2.5 A flash pulses; fast V_BE/V_CEsat response ensures consistent light intensity across battery SOC range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LKQ-7	−30 V V_CEO, −3.5 A I_C, 75 mΩ R_CEsat - lower voltage rating but higher current and lower saturation resistance.	Requires redesign for ≤30 V systems; superior for high-efficiency 5–12 V DC/DC where board space permits larger SOT23-6 footprint.	Select when V_CEO margin <10 V suffices and R_CEsat reduction below 100 mΩ is critical for thermal budget.
BC807-40,215	−45 V V_CEO, −500 mA I_C, 300 mΩ R_CEsat - higher voltage rating but lower current and higher saturation resistance.	Valid for low-power supply switching (≤500 mA) where V_CEO >40 V is mandatory and thermal headroom is ample.	Select only for legacy designs or cost-sensitive applications where 2 A capability is unnecessary and footprint compatibility is retained.

Compared with PBSS5240T,215, DMT3005LKQ-7 trades voltage headroom for lower conduction loss in compact 12 V systems, while BC807-40,215 offers higher breakdown safety at the expense of current capacity and efficiency in 2 A load paths.

Availability

PBSS5240T,215 is available at Aetrix Electronics and suitable for battery management systems, DC/DC converter designs, and high-reliability supply-line switching applications requiring stable component supply and traceable sourcing.

Supply support for PBSS5240T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PBSS5240T belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for efficient power switching in space-constrained, thermally sensitive battery-powered and portable electronics.

FAQ

What is the maximum continuous collector current for PBSS5240T,215 at 85 °C ambient?

At 85 °C ambient, the maximum continuous collector current is derated to −1.4 A based on thermal limits and the 260 K/W R_th(j-a) with 1 cm² collector pad. This value is derived from P_tot = (T_jmax − T_amb) / R_th(j-a) = (150 − 85) / 260 ≈ 250 mW, limiting I_C to √(P_loss/R_CEsat) ≈ 1.4 A using 220 mΩ worst-case R_CEsat.

Can PBSS5240T,215 replace a standard PNP BJT like BC857 in high-current switching?

Yes, but only where V_CEO ≥ −40 V and I_C ≥ −2 A are required. Unlike BC857 (−65 V, −100 mA), PBSS5240T,215 delivers 20× higher current and 3× lower R_CEsat, making it unsuitable for signal-level amplification but optimal for power switching where low saturation loss is critical.

Is PBSS5240T,215 qualified for automotive applications?

No. Per Nexperia's revision history (Table 8), PBSS5240T v.3 explicitly states "Product changed to non-automotive qualification." Automotive-grade alternatives-such as PBSS5240T-Q-must be selected for AEC-Q101-compliant designs; this part lacks automotive qualification testing and documentation.

What PCB layout guidance applies to achieve the 260 K/W R_th(j-a) thermal rating?

To achieve 260 K/W, the collector pad must be a minimum 1 cm² single-sided copper area on FR4, tin-plated, with no solder mask over the pad. The datasheet specifies this exact footprint in Fig. 9 (wave soldering) and requires thermal vias only if ambient exceeds 85 °C or power dissipation exceeds 250 mW.

PBSS5240T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 350mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 210 @ 1A, 2V

Power - Max:: 480 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5240T,215 FAQ

1.How can I place an order for PBSS5240T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5240T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5240T,215 reliable?

The price and inventory of PBSS5240T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5240T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5240T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5240T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5240T,215?

PBSS5240T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5240T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5240T,215?

For technical support, including PBSS5240T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5240T,215 requirements.

6.How does Aetrix verify that PBSS5240T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5240T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5240T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5240T,215?

All PBSS5240T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5240T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5240T,215 part is unused and in its original packaging.

Return procedure for PBSS5240T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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