Nexperia USA Inc. PBSS5240V,115

Overview

PBSS5240V from Nexperia is a 40 V, low-V_CEsat PNP bipolar junction transistor optimized for high-efficiency switching in space-constrained applications, delivering R_CEsat = 180–250 mΩ at I_C = −1 A / I_B = −100 mA, V_CEsat ≤ 370 mV at I_C = −2 A, and h_FE ≥ 50 at I_C = −2 A - deployed in DC-DC converters and battery charger load switches.

For engineers reviewing the PBSS5240V datasheet, PBSS5240V pinout, PBSS5240V application, or PBSS5240V equivalent, this page delivers verified package mapping (SOT666), terminal roles, thermal resistance data (R_th(j-a) = 110–410 K/W depending on PCB layout), saturation behavior under pulsed conditions (δ ≤ 0.02, t_p ≤ 300 µs), and validated alternatives for low-V_CEsat PNP switching.

Technical Context

This PNP transistor operates as a high-current, low-saturation-voltage switch with open-base V_CEO = −40 V and pulsed I_CRM = −2 A, supporting robust operation up to T_j = 150 °C. Its design emphasizes minimal conduction loss and thermal efficiency in compact SMD layouts.

Key electrical behaviors are defined under pulsed test conditions (t_p ≤ 300 µs, δ ≤ 0.02) to ensure stable h_FE, V_CEsat, and R_CEsat across temperature extremes (−55 °C to +150 °C), with base-emitter turn-on voltage V_BEon = −1.0 V and saturation voltage V_BEsat = −1.1 V at I_C = −1 A.

Key Specifications

Pinout & Package

SOT666 is a 6-pin ultra-small surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body, 0.5 mm pitch), with four pins internally bonded to collector, one to base, and one to emitter - enabling high-current routing while minimizing PCB footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-V_CEsat PNP switching applications.

Compared with MMBT5240LT1G and DMT3005LPSQ-7, PBSS5240V uniquely balances −40 V blocking, −1.8 A continuous current, and sub-250 mΩ R_CEsat in the smallest footprint, making it optimal for space- and efficiency-critical 3.3–24 V switching nodes.

Availability

PBSS5240V is available at Aetrix Electronics and suitable for DC-DC converter design, battery charger load switching, and peripheral driver implementation requiring stable component supply and long-term production continuity.

Supply support for PBSS5240V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for mass-market electronics.

PBSS5240V belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for high-efficiency, high-density power switching in consumer, industrial, and computing applications where thermal and board-space constraints dominate.

FAQ

What is the maximum continuous collector current for PBSS5240V under standard PCB conditions?

The PBSS5240V supports −1.8 A continuous collector current when mounted on a ceramic PCB (Al₂O₃) with standard footprint, per its limiting values table. On FR4 with single-sided copper, the rating drops to −900 mA at Tamb ≤ 25 °C due to higher thermal resistance - layout-dependent derating must be applied.

Can PBSS5240V replace an NPN transistor in the same circuit?

No - PBSS5240V is a PNP transistor with inverted polarity: its emitter connects to the higher potential rail, and it sinks current when the base is pulled low. Direct replacement of an NPN requires circuit topology changes, including signal inversion and bias network redesign, as well as verification of V_CEO/V_EBO compatibility.

What is the recommended base resistor value for driving PBSS5240V from a 3.3 V microcontroller GPIO?

For I_C = −1 A, the datasheet specifies I_B = −100 mA for guaranteed saturation. With V_BEsat ≈ −1.1 V and GPIO high = 3.3 V, the required base resistor is R_B = (3.3 V − 1.1 V) / 0.1 A = 22 Ω. A 22 Ω ±5% resistor ensures robust turn-on while limiting GPIO current within safe limits.

Is PBSS5240V qualified for automotive applications?

No - the datasheet explicitly states "Product(s) changed to non-automotive qualification" in the revision history. It lacks AEC-Q101 stress testing and automotive-grade process controls. For automotive use, consult Nexperia's automotive-qualified equivalents such as the PBSS5240X series, which undergo full AEC-Q101 qualification.