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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5250T,215

Name: PBSS5250T,215
Brand: Nexperia USA Inc.
SKU: PBSS5250T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5250T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5250T,215.pdf

Description:: TRANS PNP 50V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5250T,215 from Nexperia is a PNP low-V_CEsat bipolar junction transistor in SOT23 package, rated for −50 V V_CEO, −2 A continuous collector current, and 150 mΩ R_CEsat. It serves as a high-efficiency switching device in low-voltage power paths-e.g., supply line switching and LED backlight drivers-where ultra-low saturation voltage minimizes conduction loss and thermal load.

For engineers reviewing the PBSS5250T,215 datasheet, PBSS5250T,215 pinout, PBSS5250T,215 application, or PBSS5250T,215 equivalent, key selection criteria include verified V_CEsat ≤ −300 mV at −2 A/−100 mA drive, AEC-Q101 qualification for automotive-adjacent use, thermal resistance of 260 K/W on optimized PCB, and SOT23-compatible footprint with base-emitter-collector pinning.

Technical Context

This PNP BJT operates in saturation mode for DC switching applications, leveraging its ultra-low R_CEsat (150 mΩ) and V_CEsat (−300 mV typ. at −2 A/−100 mA) to reduce I²R losses. Its h_FE of 130 at −2 A enables efficient base drive with modest IB, while f_T = 100 MHz supports fast turn-off in pulse-driven loads like relays and buzzers.

Thermal design relies on FR4 PCB mounting with 1 cm² collector pad to achieve 260 K/W R_th(j-a); absolute maximum ratings include −50 V V_CEO, −3 A I_CM (1 ms pulse), and 150 °C T_j. The device is not intended for linear amplification but optimized for robust, low-loss switching in space-constrained, thermally sensitive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum allowable collector-emitter voltage with open base; defines safe blocking capability in supply-line switching.
I_C	−2 A continuous: Rated DC collector current; supports sustained load switching without derating at T_amb ≤ 25 °C.
V_CEsat	−300 mV typ. at −2 A/−100 mA: Confirmed saturation voltage enabling <0.6 W conduction loss at full current.
R_CEsat	150 mΩ max. at −2 A/−200 mA pulsed: Directly determines on-state power dissipation and thermal rise under pulsed loads.
h_FE	130 min. at −2 A: Ensures reliable saturation with ≤15.4 mA base drive, reducing driver circuit complexity and power.
f_T	100 MHz: Supports clean turn-off in inductive load switching (e.g., relays, motors) up to ~100 kHz PWM frequencies.
R_th(j-a)	260 K/W with 1 cm² collector pad: Enables 480 mW P_tot dissipation at T_amb = 25 °C, critical for compact PCB layouts.

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm pitch); 3-terminal configuration with standard JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −100 mA typical drive to saturate at −2 A; polarity-sensitive for PNP operation.
2	Emitter (E)	Common reference terminal; connected to higher potential rail in high-side switch configurations.
3	Collector (C)	Load connection point; thermally enhanced pad requires ≥1 cm² copper area for rated power handling.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-adjacent applications including battery chargers and peripheral drivers per stress test requirements.
Ultra-low V_CEsat	−300 mV typ. at −2 A reduces conduction loss by >40% vs. standard PNP transistors, lowering thermal management burden.
High I_C/I_CM rating	−2 A continuous / −3 A pulsed enables direct driving of medium-power loads (e.g., 5 W LED strings, 12 V relays) without external buffering.
Optimized thermal resistance	260 K/W with defined PCB layout allows stable operation at full current in ambient temperatures up to 85 °C.
Cost-effective BJT alternative	Delivers MOSFET-level efficiency in low-voltage switching (<12 V) without gate-drive complexity or cost premium.

Applications

Power Management Switching

DC/DC Converter Control

Use Scenario: High-side switching of 3.3–12 V supply rails in portable electronics and industrial controllers.

IC Role / Device Role / Timing Role: PNP BJT configured as saturated switch controlling power delivery to subsystems during sleep/wake cycles.

Use Value: V_CEsat ≤ −300 mV limits voltage drop to <3% of 12 V rail, preserving regulation margin and minimizing self-heating.

Use Scenario: Synchronous rectifier or freewheeling switch in non-isolated buck converters operating below 15 V input.

IC Role / Device Role / Timing Role: Low-loss active clamp replacing Schottky diode to improve efficiency at light-to-moderate loads.

Use Value: R_CEsat = 150 mΩ cuts conduction loss by 65% vs. 0.4 V Schottky drop at 1 A, directly increasing converter efficiency by 1.2–2.0%.

Battery Charger Load Switch

Inductive Load Driver

Use Scenario: Isolation of charging circuitry from battery during standby or fault conditions in USB-PD and Li-ion systems.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch placed between charger IC output and battery terminal.

Use Value: −50 V V_CEO withstands transient spikes during hot-plug events; AEC-Q101 qualification ensures reliability across charge cycles.

Use Scenario: Driving 12 V relays, piezo buzzers, or small DC motors in automotive body control modules and smart appliances.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor with 100 MHz f_T enabling clean turn-off and reduced flyback energy dissipation.

Use Value: 130 h_FE ensures full saturation with <16 mA base current, simplifying microcontroller GPIO drive without external buffer stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS20201MR6T1G	V_CEsat = −250 mV @ −2 A/−200 mA; slightly lower R_CEsat but no AEC-Q101 qualification.	Lacks automotive stress validation; suitable for commercial-grade DC/DC and peripheral drivers only.	Select when AEC-Q101 is not required and lowest possible V_CEsat is prioritized over qualification.
Diodes Incorporated DXT52500QE-7	V_CEsat = −350 mV @ −2 A/−100 mA; higher saturation voltage and 100 mW lower P_tot (380 mW).	Lower thermal capability limits continuous current to 1.5 A at 70 °C ambient without derating.	Choose for cost-sensitive consumer applications where peak efficiency is secondary to BOM cost.

Compared with NSS20201MR6T1G and DXT52500QE-7, PBSS5250T,215 uniquely balances AEC-Q101 compliance, −300 mV V_CEsat, and 480 mW power handling-making it optimal for automotive-adjacent power switches requiring both reliability and thermal headroom.

Availability

PBSS5250T,215 is available at Aetrix Electronics and suitable for power management switching, DC/DC converter control, and inductive load driving requiring stable component supply across automotive, industrial, and consumer production programs.

Supply support for PBSS5250T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions with focus on efficiency, reliability, and miniaturization.

PBSS5250T,215 belongs to Nexperia's low-V_CEsat BJT portfolio, engineered specifically for high-efficiency, space-constrained switching in battery-powered and automotive-adjacent systems.

FAQ

Is PBSS5250T,215 suitable for high-frequency PWM switching?

Yes-its 100 MHz transition frequency (f_T) and fast turn-off characteristics support PWM operation up to ~100 kHz in inductive load applications such as relay drivers and DC motor control. However, it is not optimized for RF or MHz-range switching; gate-driven MOSFETs remain preferable above 200 kHz.

What is the recommended PCB layout for thermal performance?

For rated 480 mW power dissipation, mount PBSS5250T,215 on FR4 with a 1 cm² copper pad connected to pin 3 (collector), single-sided, tin-plated. Avoid thermal vias beneath the pad unless validated per Nexperia's AN10327; standard SOT23 footprint dimensions (2.9 mm × 1.3 mm) must be maintained.

Does PBSS5250T,215 require a base resistor in all applications?

Yes-a series base resistor is mandatory to limit I_B within the −300 mA absolute maximum and ensure stable saturation. For −2 A I_C, a 10 kΩ resistor from 3.3 V GPIO yields ~330 µA I_B, insufficient for full saturation; a 220 Ω resistor from 5 V provides ~18 mA, meeting the −100 mA drive requirement.

Can PBSS5250T,215 replace an N-channel MOSFET in low-side switching?

No-it is a PNP transistor designed for high-side switching configurations. Replacing an N-channel MOSFET in low-side position would invert logic and violate polarity constraints. Use only in emitter-follower or high-side switch topologies where the emitter connects to the positive rail.

PBSS5250T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 480 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5250T,215 FAQ

1.How can I place an order for PBSS5250T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5250T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5250T,215 reliable?

The price and inventory of PBSS5250T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5250T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5250T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5250T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5250T,215?

PBSS5250T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5250T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5250T,215?

For technical support, including PBSS5250T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5250T,215 requirements.

6.How does Aetrix verify that PBSS5250T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5250T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5250T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5250T,215?

All PBSS5250T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5250T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5250T,215 part is unused and in its original packaging.

Return procedure for PBSS5250T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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