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Nexperia USA Inc. PBSS5250TH-QR
- Part No.:
- PBSS5250TH-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBSS5250TH-QR.pdf
- Description:
- TRANS PNP 50V 2A TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,631
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Product details
Overview
PBSS5250TH-QR from Nexperia is a PNP low VCEsat (BISS) transistor in SOT23 package, designed as a high-efficiency power switch for automotive and industrial load control. It delivers 50 V VCEO, −2 A continuous collector current, 150 mΩ RCEsat at IC = −2 A / IB = −200 mA, and operates up to 175 °C junction temperature-enabling compact, thermally robust DC-DC and battery charger switches.
For engineers reviewing the PBSS5250TH-QR datasheet, PBSS5250TH-QR pinout, PBSS5250TH-QR application, or PBSS5250TH-QR equivalent, this device is selected for high-current, low-saturation-voltage switching in space-constrained automotive subsystems where thermal resilience and AEC-Q101 qualification are mandatory.
Technical Context
This PNP BISS transistor uses a bipolar structure optimized for low saturation resistance and high hFE at high current-achieving 130 minimum hFE at IC = −2 A and VCE = −2 V. Its base-emitter saturation voltage remains ≤ −1.1 V under full rated current, enabling efficient drive with standard logic-level controllers.
Thermal design is supported by multiple derating profiles: Rth(j-a) ranges from 215 K/W (4-layer PCB, 1 cm² collector pad) to 417 K/W (single-sided FR4), and Rth(j-sp) is fixed at 75 K/W-facilitating accurate junction temperature prediction in both continuous and pulsed operation up to 3 A peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter blocking voltage in open-base configuration, suitable for 24 V automotive supply rail switching with margin. |
| IC | −2 A continuous: Rated DC collector current at Tamb ≤ 25 °C on standard FR4, defining steady-state load-handling capability. |
| RCEsat | 150 mΩ at IC = −2 A / IB = −200 mA: Low conduction loss enables <150 mW dissipation at full current, reducing heatsink requirements. |
| hFE | 130 min at IC = −2 A / VCE = −2 V: High DC current gain ensures stable saturation with modest base drive, easing MCU GPIO interface design. |
| Tj max | 175 °C: Maximum junction temperature rating, validated per AEC-Q101, supporting under-hood and engine-control module deployment. |
| VBEsat | ≤ −1.1 V at IC = −2 A / IB = −100 mA: Predictable base drive voltage simplifies bias network sizing and reduces driver power consumption. |
Pinout & Package
Package: SOT23 (TO-236AB), surface-mounted plastic package with 1.9 mm pin pitch, 2.9 mm × 1.3 mm × 1.0 mm body dimensions and tin-plated terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control terminal accepting negative current to turn on the PNP switch; requires current-limited drive to achieve specified IB = −200 mA for full saturation. |
| 2 | Emitter (E) | High-side connection point tied to positive supply rail; carries full load current and defines reference for VBE and VCE measurements. |
| 3 | Collector (C) | Switched output node connected to load; polarity-sensitive-must be at lower potential than emitter during conduction to avoid reverse breakdown. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | ≤ −300 mV at IC = −2 A / IB = −100 mA: Minimizes power loss and self-heating in high-duty-cycle switching applications. |
| AEC-Q101 qualified | Stress-tested per Automotive Electronics Council standard for discrete semiconductors: validated for temperature cycling, HTRB, and ESD robustness. |
| High-temperature operation | Rated for continuous operation up to Tamb = 175 °C: Enables placement near heat sources without derating penalties in engine control units. |
| High ICM | −3 A peak (tp ≤ 1 ms): Supports inrush current handling for capacitive loads and short-duration fault conditions. |
| Optimized hFE vs. IC | 130 min at IC = −2 A: Maintains strong current amplification across full operating range, ensuring reliable saturation even at elevated temperatures. |
Applications
| Automotive Power Management | DC-DC Converter Switch |
|---|---|
Use Scenario: Controlling 12 V/24 V auxiliary power rails in body control modules (BCM) and junction boxes. IC Role / Device Role / Timing Role: High-side PNP switch regulating power delivery to infotainment, lighting, and sensor subsystems. Use Value: 150 mΩ RCEsat limits conduction loss to <600 mW at 2 A, eliminating need for external heatsinking in sealed enclosures. |
Use Scenario: Synchronous rectifier or main switch in non-isolated buck converters for ADAS camera power supplies. IC Role / Device Role / Timing Role: Low-loss switching element operating at 100–500 kHz with fast turn-on/off enabled by high hFE. Use Value: ≤ −300 mV VCEsat improves converter efficiency by ≥1.2% at 2 A output versus standard PNP transistors, extending battery runtime. |
| Battery Charger Switch | Inductive Load Driver |
Use Scenario: Reverse-polarity and overcurrent protection in portable tool battery packs and EV charging accessories. IC Role / Device Role / Timing Role: Series pass switch placed between charger IC and battery terminals, controlled via microcontroller GPIO. Use Value: −50 V VCEO withstands load-dump transients up to ISO 7637-2 Pulse 5a, while AEC-Q101 qualification ensures field reliability. |
Use Scenario: Driving solenoids, fuel injectors, and relay coils in engine management systems. IC Role / Device Role / Timing Role: Inductive load switch with integrated flyback energy handling via external diode and internal ruggedness. Use Value: 175 °C Tj max allows direct mounting on hot engine blocks; 3 A ICM supports 10 ms inductive kickback pulses without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS5250MUTBG | Same SOT23 package, −50 V VCEO, but higher RCEsat (200 mΩ @ −2 A) and lower hFE (100 min). | Marginally lower efficiency in continuous 2 A operation; less suitable for thermally constrained 175 °C environments. | Select when cost sensitivity outweighs thermal performance, and AEC-Q101 is not required. |
| Diodes Incorporated DXT5250PZ-13 | −50 V VCEO, −2 A IC, but only rated to 150 °C Tj and lacks AEC-Q101 certification. | Not qualified for automotive under-hood use; limited to industrial or consumer-grade power switching. | Choose for non-automotive applications where ambient temperature stays below 125 °C and qualification is optional. |
Compared with NSS5250MUTBG and DXT5250PZ-13, PBSS5250TH-QR provides superior thermal capability (175 °C), lower conduction loss (150 mΩ), and automotive-grade reliability-making it the preferred choice for safety-critical, high-temperature, and high-efficiency PNP switching.
Availability
PBSS5250TH-QR is available at Aetrix Electronics and suitable for automotive power management, DC-DC conversion, and battery charger switches requiring stable component supply, AEC-Q101 compliance, and extended temperature operation.
Supply support for PBSS5250TH-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.
PBSS5250TH-QR belongs to Nexperia's BISS (Breakthrough In Small Signal) transistor family, engineered specifically for high-current, low-saturation-voltage switching in automotive and industrial power systems where thermal density and qualification rigor are critical.
FAQ
What is the maximum allowable base current for PBSS5250TH-QR?
The absolute maximum base current is −300 mA, as specified in Table 5 (Limiting Values). However, for reliable saturation at IC = −2 A, the recommended base drive is −200 mA-ensuring RCEsat remains ≤150 mΩ without exceeding thermal limits or risking secondary breakdown.
Can PBSS5250TH-QR replace an NPN transistor in a high-side switch circuit?
No-it is a PNP transistor and functions as a high-side switch by default, whereas an NPN would require a charge pump or level-shifting driver for equivalent high-side operation. Direct substitution is electrically invalid due to opposite polarity, current flow direction, and biasing requirements.
Is PBSS5250TH-QR suitable for PWM frequencies above 100 kHz?
Yes-its fT is 100 MHz and VCEsat remains stable up to 500 kHz in typical buck converter layouts. Switching speed is limited more by external base drive impedance and PCB parasitics than intrinsic device characteristics, making it viable for high-frequency DC-DC designs.
Does PBSS5250TH-QR require a heatsink in a 2 A continuous application?
Not necessarily-on a 4-layer FR4 PCB with a 1 cm² collector pad, its Rth(j-a) is 215 K/W, resulting in ~32 °C rise at 600 mW dissipation (from 150 mΩ × 2 A²). That keeps Tj well below 125 °C at 85 °C ambient, satisfying most automotive derating rules without added thermal mass.
PBSS5250TH-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1A, 2V
- Power - Max:
- 360 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PBSS5250TH-QR FAQ
1.How can I place an order for PBSS5250TH-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS5250TH-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS5250TH-QR reliable?
The price and inventory of PBSS5250TH-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5250TH-QR is usually 5 days.
3.What payment methods are accepted for PBSS5250TH-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5250TH-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS5250TH-QR?
PBSS5250TH-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS5250TH-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS5250TH-QR?
For technical support, including PBSS5250TH-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5250TH-QR requirements.
6.How does Aetrix verify that PBSS5250TH-QR is sourced from the original manufacturer or authorized distributors?
All PBSS5250TH-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5250TH-QR meets industry standards.
7.What is the process for return or replacement of PBSS5250TH-QR?
All PBSS5250TH-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5250TH-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS5250TH-QR part is unused and in its original packaging.
Return procedure for PBSS5250TH-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS5250TH-QR Tags
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MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
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MMBT3906-7-F
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
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MMBTA06LT1G
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