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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5250THR

Name: PBSS5250THR
Brand: Nexperia USA Inc.
SKU: PBSS5250THR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5250THR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5250THR.pdf

Description:: TRANS PNP 50V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5250THR from Nexperia is a PNP low V_CEsat transistor in SOT23 package, designed for high-efficiency switching in power management and DC-DC conversion circuits. It delivers 50 V V_CEO, −2 A continuous collector current, 150 mΩ R_CEsat at I_C = −2 A / I_B = −200 mA, and operates up to 175 °C junction temperature-enabling compact, thermally robust load switching in battery-powered and industrial control systems.

For engineers reviewing the PBSS5250THR datasheet, PBSS5250THR pinout, PBSS5250THR application, or PBSS5250THR equivalent, key selection criteria include verified low saturation resistance, thermal derating behavior on FR4 PCBs, safe operating area under pulsed inductive loads, and compatibility with 3.3 V/5 V base drive in peripheral driver configurations.

Technical Context

This PNP bipolar transistor uses epitaxial planar technology optimized for low saturation voltage and high current gain at elevated collector currents. Its h_FE ≥ 130 at I_C = −2 A ensures reliable saturation with modest base drive (I_B = −100 mA), while V_CEsat ≤ −300 mV at I_C = −2 A / I_B = −100 mA minimizes conduction loss in high-duty-cycle switches.

Thermal design is supported by four documented R_th(j-a) values (215–417 K/W) depending on PCB copper layer count and collector pad area, and transient thermal impedance curves confirm stable operation under 1 ms pulses up to 3 A peak. The device is non-automotive qualified and rated for −55 °C to +175 °C ambient operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum blocking voltage across collector-emitter with base open; defines maximum supply rail compatibility in high-side switch topologies.
I_C	−2 A - Continuous DC collector current rating; supports sustained load switching in battery chargers and DC-DC output stages.
R_CEsat	150 mΩ - Measured at I_C = −2 A / I_B = −200 mA; enables <150 mW conduction loss at full load, reducing thermal stress on small PCB footprints.
h_FE	130 min - DC current gain at I_C = −2 A / V_CE = −2 V; ensures deep saturation with base current ≤5% of collector current.
T_j max	175 °C - Maximum junction temperature; allows operation in sealed enclosures or high-ambient industrial environments without forced cooling.
V_BEsat	−1.1 V - Base-emitter saturation voltage at I_C = −2 A / I_B = −100 mA; determines minimum base drive voltage required for full turn-on.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, 3-terminal configuration with gull-wing leads. Designed for reflow and wave soldering per IPC-7095 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring negative bias relative to emitter; drives transistor into saturation with I_B ≥ −100 mA for full I_C = −2 A conduction.
2	Emitter (E)	Common reference terminal for PNP topology; connects to higher-potential rail (e.g., battery positive); carries full load current and sets V_BE reference.
3	Collector (C)	Switched output terminal; connects to load; must be routed with adequate copper area to manage thermal resistance (R_th(j-sp) = 75 K/W).

Key Features

Feature	Design Value
Low V_CEsat	≤ −300 mV at I_C = −2 A / I_B = −100 mA - Reduces power dissipation by >40% vs. standard PNP transistors, enabling smaller heatsinking.
High h_FE at high I_C	≥130 at I_C = −2 A - Enables efficient base drive scaling; permits use of low-current GPIO or logic buffers without external amplification.
175 °C operation	Rated T_j max = 175 °C - Supports deployment in engine bay proximity, industrial motor controls, and sealed power supplies without derating.
Robust SOA	Peak I_C = −3 A (1 ms pulse) with V_CE ≤ −50 V - Handles inductive kickback in relay and solenoid drivers without secondary breakdown.

Applications

Battery Charger Switch

DC-DC Converter High-Side Switch

Use Scenario: Switching battery charging path between USB input and wall adapter in portable medical devices.

IC Role / Device Role / Timing Role: PNP high-side switch controlling current flow from input source to battery protection IC, activated/deactivated via microcontroller GPIO.

Use Value: Low R_CEsat limits voltage drop to <300 mV at 2 A, preserving charging efficiency and minimizing thermal rise on 2-layer FR4 PCB.

Use Scenario: Enabling/disabling 5 V output stage in isolated flyback converter for industrial sensor nodes.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in post-regulation stage, driven by PWM controller with level-shifted base signal.

Use Value: 130 h_FE ensures full saturation with 100 mA base drive, eliminating need for Darlington configuration and reducing gate-drive complexity.

Peripheral LED Driver

Inductive Load Driver

Use Scenario: Driving high-brightness indicator LEDs in automotive dashboard modules (non-safety-critical).

IC Role / Device Role / Timing Role: Constant-current sink switch regulating LED brightness via PWM base modulation at 1 kHz.

Use Value: −1.1 V V_BEsat allows direct interface with 3.3 V MCU outputs using single series resistor, simplifying BOM and layout.

Use Scenario: Controlling 24 V solenoid valves in HVAC actuators with flyback diode protection.

IC Role / Device Role / Timing Role: High-side switch managing inductive energy discharge during turn-off; requires fast recovery and SOA margin.

Use Value: 175 °C T_j rating and 3 A peak current capability ensure reliability during repeated 100 ms actuation cycles in hot ambient enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS20201MR6T1G	V_CEO = −20 V, I_C = −2 A, R_CEsat = 200 mΩ at I_C = −2 A - lower voltage rating, higher saturation resistance.	Limited to ≤20 V supply rails; less suitable for 24 V industrial loads or 36 V battery systems.	Select when cost sensitivity outweighs voltage headroom needs and board space permits larger thermal pads for higher R_CEsat.
Diodes Incorporated DXT5250P5-13	V_CEO = −50 V, I_C = −2 A, R_CEsat = 180 mΩ at I_C = −2 A - identical voltage/current ratings but 20% higher saturation resistance.	Delivers ~12% higher conduction loss at full load; requires tighter thermal management on 2-layer boards.	Choose if dual sourcing is required and marginal efficiency loss is acceptable in thermally constrained designs.

Compared with NSS20201MR6T1G and DXT5250P5-13, PBSS5250THR provides superior voltage margin and lowest R_CEsat, making it optimal for 24–48 V systems where thermal headroom and efficiency are critical-especially on standard FR4 layouts without enhanced copper.

Availability

PBSS5250THR is available at Aetrix Electronics and suitable for battery charger switches, DC-DC converter high-side control, peripheral LED drivers, and inductive load drivers requiring stable component supply across production lifecycles.

Supply support for PBSS5250THR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and thermal robustness.

PBSS5250THR belongs to Nexperia's low V_CEsat bipolar transistor product line, engineered specifically for high-current, low-loss switching in space-constrained power management and industrial control applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −300 mA per datasheet limiting values. For reliable long-term operation, base current should be limited to ≤−200 mA under continuous DC conditions to maintain junction temperature within 175 °C, especially when mounted on standard 2-layer FR4 PCBs with minimal copper area.

Can PBSS5250THR replace a MOSFET in high-side switching applications?

Yes, but with trade-offs: it offers lower gate-drive complexity than PMOS (no level shifter needed) and better SOA under inductive switching than many small-signal MOSFETs. However, its −1.1 V V_BEsat requires more base drive power than MOSFET gate charge, and it lacks the near-zero static gate current of MOSFETs.

How does thermal performance vary between 2-layer and 4-layer PCB mounting?

R_th(j-a) improves from 417 K/W (2-layer, standard footprint) to 215 K/W (4-layer, 1 cm² collector pad), enabling ~2.3× higher continuous power dissipation. At I_C = −2 A, this translates to ~120 mW vs. ~280 mW allowable P_tot before exceeding 175 °C junction temperature.

Is PBSS5250THR suitable for automotive applications?

No. Per revision history v.3 (20241008), this part was explicitly changed to non-automotive status. It is not AEC-Q101 qualified, lacks automotive-grade screening, and has no guaranteed performance over automotive temperature ranges or lifetime requirements. Use only in industrial, consumer, or commercial equipment.

PBSS5250THR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 130 @ 2A, 2V

Power - Max:: 700 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5250THR FAQ

1.How can I place an order for PBSS5250THR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5250THR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5250THR reliable?

The price and inventory of PBSS5250THR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5250THR is usually 5 days.

3.What payment methods are accepted for PBSS5250THR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5250THR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5250THR?

PBSS5250THR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5250THR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5250THR?

For technical support, including PBSS5250THR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5250THR requirements.

6.How does Aetrix verify that PBSS5250THR is sourced from the original manufacturer or authorized distributors?

All PBSS5250THR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5250THR meets industry standards.

7.What is the process for return or replacement of PBSS5250THR?

All PBSS5250THR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5250THR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5250THR part is unused and in its original packaging.

Return procedure for PBSS5250THR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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