Nexperia USA Inc. PBSS5260QAZ

Overview

PBSS5260QAZ from Nexperia is a PNP low V_CEsat (BISS) transistor in DFN1010D-3 (SOT1215) package, rated for −60 V V_CEO, −1.7 A continuous I_C, and 195–280 mΩ R_CEsat at I_C = −1 A / I_B = −100 mA. It delivers high h_FE (30–45) at high current and is AEC-Q101 qualified for automotive loadswitching and battery power management.

For engineers reviewing the PBSS5260QAZ datasheet, PBSS5260QAZ pinout, PBSS5260QAZ application, or PBSS5260QAZ equivalent, key selection criteria include its ultra-low saturation resistance, thermal performance on FR4 PCBs, side-pad solderability, and validated operation in motor/fan switching and charging circuits under −55 °C to +150 °C ambient conditions.

Technical Context

This PNP BISS transistor uses breakthrough small-signal silicon technology to achieve low V_CEsat without compromising gain or speed. Its structure enables high h_FE (≥30 at I_C = −1.7 A) and fast switching (t_on = 50 ns, t_off = 350 ns) while maintaining robust thermal behavior across multiple PCB mounting configurations.

Designed for DC load control, it operates with base-emitter turn-on voltage of −0.78 to −0.9 V at I_C = −0.5 A and exhibits f_T = 100–150 MHz, confirming suitability for medium-frequency switching applications. The device's dual collector terminals (Pins 3 & 4) enhance current handling and thermal spreading in the DFN1010D-3 package.

Key Specifications

Pinout & Package

DFN1010D-3 (SOT1215) is a leadless, thermally enhanced ultra-thin plastic package with visible and solderable side pads. Dimensions: 1.05 × 1.05 × 0.25 mm (L × W × H), featuring dual collector terminals for improved current sharing and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Compared with DMTC3005LPSQ-7 and PBSS5350QAZ, PBSS5260QAZ offers optimal balance of automotive qualification, ultra-compact DFN1010D-3 size, and verified −1.7 A capability-making it preferred for space-limited, safety-conscious 12–48 V DC load switching where bipolar simplicity and thermal predictability are critical.

Availability

PBSS5260QAZ is available at Aetrix Electronics and suitable for automotive cabin controls, USB-C PD load switching, and industrial solenoid driving requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for PBSS5260QAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions optimized for automotive, industrial, and mobile applications.

PBSS5260QAZ belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-reliability DC load switching in space-constrained and thermally demanding environments.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (I_B) is −0.3 A per datasheet Table 5. For reliable saturation at −1.7 A collector current, the recommended pulsed base drive is −170 mA (I_C/I_B = 10), with 300 µs pulse width and ≤2% duty cycle to limit junction temperature rise.

Can PBSS5260QAZ be used in high-side switch configuration with 48 V supply?

Yes. Its −60 V V_CEO rating provides 12 V margin above 48 V nominal systems, and its AEC-Q101 qualification validates robustness against load-dump transients up to ISO 7637-2 Pulse 5a. Layout must minimize emitter inductance to suppress voltage overshoot during turn-off.

How does the dual-collector construction affect PCB layout?

Pins 3 and 4 are internally shorted collectors and must be connected to the same copper pour. The datasheet recommends a 1 cm² tin-plated collector pad on 4-layer FR4 to achieve R_th(j-a) = 125 K/W. Solder mask openings must fully expose both side pads for optimal thermal transfer and solder wetting.

Is there a complementary NPN device with matching specs?

Yes: PBSS4260QA is the designated NPN complement, sharing identical DFN1010D-3 package, −60 V V_CEO, +1.7 A I_C, and 195–280 mΩ R_CEsat. Both devices exhibit matched h_FE curves and thermal characteristics, enabling balanced push-pull or H-bridge designs without layout asymmetry.