Nexperia USA Inc. PBSS5320T-QR

Overview

PBSS5320T-QR from Nexperia is a PNP low V_CE(sat) transistor in SOT23 package, rated for −20 V V_CEO, −3 A I_CRM, and 75 mΩ R_CE(sat) at −2 A/−200 mA drive, designed for high-efficiency power switching in automotive-grade DC/DC converters and LDO regulators.

For engineers reviewing the PBSS5320T-QR datasheet, PBSS5320T-QR pinout, PBSS5320T-QR application, or PBSS5320T-QR equivalent, this page delivers verified electrical parameters, validated SOT23 terminal mapping, automotive-qualified thermal performance, and real-world use cases in battery charging and supply-line switching circuits.

Technical Context

This PNP transistor operates with low saturation voltage (V_CE(sat) ≤ −300 mV at −3 A/−300 mA) and high DC current gain (h_FE ≥ 100 at −3 A), enabling efficient linear regulation and fast-switching load control. Its AEC-Q101 qualification confirms robustness under automotive thermal cycling and humidity stress.

The device achieves 75 mΩ typical R_CE(sat) at 25 °C with pulsed conditions (t_p ≤ 300 µs, δ ≤ 0.02), and maintains stable V_BE(sat) (≤ −1.2 V) across −55 °C to +150 °C junction temperature range-critical for under-hood power management.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, standard footprint per Fig. 12 (reflow) and Fig. 13 (wave soldering).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CE(sat) transistor applications.

Compared with NSS40201MZ4T1G and DXT53200Q-7, PBSS5320T-QR delivers superior current handling (−3 A I_CRM) and lowest R_CE(sat) (75 mΩ), making it optimal for space-constrained 3 A automotive power switches where thermal budget is tight.

Availability

PBSS5320T-QR is available at Aetrix Electronics and suitable for automotive battery chargers, DC/DC converters, and supply-line switching applications requiring stable component supply and AEC-Q101 compliance.

Supply support for PBSS5320T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with core expertise in automotive-qualified power transistors and ESD protection.

PBSS5320T-QR belongs to Nexperia's "Low V_CE(sat) Transistor" product line, engineered specifically for minimizing conduction losses in automotive power management and battery interface circuits.

FAQ

What is the maximum continuous collector current for PBSS5320T-QR?

The maximum continuous collector current is −2 A under ambient conditions ≤25 °C with adequate PCB copper area (6 cm² collector pad). At higher temperatures or reduced heatsinking, derating applies per Table 5's P_tot limits and thermal resistance data.

Is PBSS5320T-QR suitable for linear regulator applications?

Yes-its low V_CE(sat) (≤−300 mV at −3 A) and high h_FE (≥100) enable efficient linear regulation with minimal dropout voltage and stable base drive, especially in automotive LDO stages where thermal headroom is limited.

How does the SOT23 package affect thermal performance?

Thermal resistance from junction to ambient ranges from 104 K/W (pulsed, optimized layout) to 417 K/W (free-air), meaning PCB copper area on the collector pad is critical: 6 cm² reduces R_th(j-a) by 75% versus standard footprint, directly enabling higher sustained current.

What is the base-emitter voltage required to achieve full saturation?

V_BE(sat) is −1.2 V at −3 A/−300 mA drive (pulsed), and −1.1 V at −2 A/−100 mA. Designers must ensure base drive circuitry can deliver ≥−300 mA peak current while maintaining ≥−1.2 V across the base-emitter junction under worst-case temperature.