Nexperia USA Inc. PBSS5320X,135
- Part No.:
- PBSS5320X,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
PBSS5320X,135.pdf
- Description:
- TRANS PNP 20V 3A SOT-89
- Quantity:
- Payment:

- Shipping:

Inventory:8,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS5320X,135 from Nexperia is a PNP low VCEsat (BISS) transistor in SOT89 package, designed for high-efficiency switching in low-voltage power paths. It delivers −20 V VCEO, −3 A continuous IC, 90–105 mΩ RCEsat at −3 A/−300 mA drive, and AEC-Q101 qualification-enabling robust operation in automotive-grade DC/DC converters and battery charger control circuits.
For engineers reviewing the PBSS5320X,135 datasheet, PBSS5320X,135 pinout, PBSS5320X,135 application, or PBSS5320X,135 equivalent, key selection criteria include verified low saturation resistance under pulsed conditions, thermal performance on FR4 vs. ceramic PCBs, junction temperature limits up to 150 °C, and compatibility with standard SOT89 reflow footprints per Fig. 13.
Technical Context
This PNP BISS transistor uses a bipolar structure optimized for low-saturation operation, with base-emitter turn-on voltage of −1.1 V at −1 A and VBEsat ≤ −1.2 V at −3 A/−300 mA. Its hFE ranges from 100 (at −3 A) to 220 (at −0.1 A), supporting stable current gain across load conditions.
Thermal design is enabled by multiple Rth(j-a) values: 225 K/W (standard FR4), 90 K/W (6 cm² collector pad), and 80 K/W (ceramic PCB). Transient thermal impedance curves (Figs. 2–3) confirm suitability for pulsed inductive loads like relays and buzzers with duty cycles down to 1%.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −20 V - Maximum safe collector-emitter blocking voltage in open-base configuration. |
| IC | −3 A - Continuous DC collector current rating on 7 cm² ceramic PCB per IEC 60134. |
| RCEsat | 90–105 mΩ - Verified on-resistance at −3 A/−300 mA drive, enabling <0.3 V saturation drop. |
| hFE | 100–220 - DC current gain range across −0.1 A to −3 A, supporting predictable base drive sizing. |
| Tj max | 150 °C - Absolute maximum junction temperature, defining thermal derating envelope. |
| AEC-Q101 | Qualified - Validated for automotive discrete semiconductor stress testing per AEC standard. |
Pinout & Package
SOT89 (SC-62) medium-power flat-lead plastic package with exposed die pad for enhanced thermal transfer; 3-pin surface-mount outline per IEC JEDEC TO-243.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current exit node; connected to most positive rail in PNP high-side switch configurations. |
| 2 | Collector | Main current path input; tied to load or supply rail; soldered to thermal pad for heat dissipation. |
| 3 | Base | Control terminal requiring −300 mA drive for full saturation at −3 A output. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | ≤ −300 mV at −3 A/−300 mA enables >95% efficiency in 3.3 V–5 V switching applications. |
| AEC-Q101 qualification | Validated for automotive underhood environments including thermal cycling and humidity exposure. |
| High ICM | −5 A peak current supports motor startup surges and relay coil energization without latch-up. |
| Thermal pad integration | Exposed collector pad allows direct PCB copper area attachment for Rth(j-sp) = 16 K/W. |
Applications
| DC/DC Converter Switching | Battery Charger Control |
|---|---|
Use Scenario: Step-down (buck) converter top switch in portable 5 V–12 V systems. IC Role / Device Role / Timing Role: PNP high-side switch controlling energy transfer to output inductor. Use Value: 90 mΩ RCEsat reduces conduction loss by >40% versus standard PNP transistors at 2 A load. |
Use Scenario: Charge path enable/disable in USB-PD and Li-ion battery management. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch in charging FET stack. Use Value: −20 V VCEO withstands input surge transients; AEC-Q101 ensures reliability in automotive chargers. |
| LCD Backlight Driver | Inductive Load Switching |
Use Scenario: Constant-current LED string driver in automotive instrument clusters. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink for white LED arrays. Use Value: Stable hFE ≥ 150 at −1 A ensures precise current regulation with minimal base drive variance. |
Use Scenario: Relay and buzzer driver in body control modules and HVAC actuators. IC Role / Device Role / Timing Role: High-current PNP switch driving inductive coils with flyback protection. Use Value: −5 A ICM handles 3× inrush current; 150 °C Tj max sustains operation during sustained coil energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS40501MR6T1G | −20 V VCEO, −4 A IC, but higher RCEsat (150 mΩ typical) and no AEC-Q101 rating. | Acceptable for industrial DC/DC but not automotive due to missing qualification. | Select when higher peak current is prioritized over thermal efficiency and automotive compliance. |
| Diodes Incorporated DXT53200Q-7 | −20 V VCEO, −3 A IC, RCEsat = 110–130 mΩ, AEC-Q101 qualified, same SOT89 package. | Compatible footprint and qualification, but 15–25% higher saturation resistance increases power loss. | Choose if Nexperia supply constraints exist and marginal efficiency loss is acceptable. |
Compared with PBSS5320X,135, NSS40501MR6T1G trades automotive qualification for higher peak current, while DXT53200Q-7 matches qualification and package but sacrifices 15–25% conduction efficiency-making PBSS5320X,135 optimal where thermal performance and automotive compliance are jointly critical.
Availability
PBSS5320X,135 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC/DC converters, and battery-powered peripheral drivers requiring stable component supply and long-term lifecycle support.
Supply support for PBSS5320X,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.
PBSS5320X,135 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, thermally constrained switching in automotive and industrial power management systems.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum base current is −500 mA per Table 5. However, for reliable continuous operation at −3 A collector current, the datasheet specifies −300 mA base drive (IC/IB = 10) to ensure full saturation without excessive base power dissipation or thermal stress on the bond wires.
Can PBSS5320X,135 be used in parallel for higher current handling?
No-this PNP BISS transistor lacks inherent current-sharing characteristics due to negative temperature coefficient of VCEsat. Parallel operation risks thermal runaway; Nexperia does not recommend or characterize it for such use. For higher current, select a single higher-rated device like PBSS5350X.
Is the SOT89 footprint compatible with wave soldering?
Yes-the datasheet provides dedicated wave soldering land pattern (Fig. 14) with 7.6 mm length and 2.4 mm width, plus solder resist openings sized for capillary flow. Thermal pad must remain unmasked to ensure mechanical and thermal integrity during wave process.
How does RCEsat change with temperature and current?
RCEsat increases with junction temperature: Fig. 10 shows ~15% rise from 25 °C to 100 °C at IC/IB = 20. At fixed temperature, it decreases with higher IB ratio-e.g., 90 mΩ at IC/IB = 10 drops to ~75 mΩ at IC/IB = 100-confirming strong gate-drive sensitivity in BISS architecture.
PBSS5320X,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 2A, 2V
- Power - Max:
- 1.6 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89
PBSS5320X,135 FAQ
1.How can I place an order for PBSS5320X,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS5320X,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS5320X,135 reliable?
The price and inventory of PBSS5320X,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5320X,135 is usually 5 days.
3.What payment methods are accepted for PBSS5320X,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5320X,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS5320X,135?
PBSS5320X,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS5320X,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS5320X,135?
For technical support, including PBSS5320X,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5320X,135 requirements.
6.How does Aetrix verify that PBSS5320X,135 is sourced from the original manufacturer or authorized distributors?
All PBSS5320X,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5320X,135 meets industry standards.
7.What is the process for return or replacement of PBSS5320X,135?
All PBSS5320X,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5320X,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS5320X,135 part is unused and in its original packaging.
Return procedure for PBSS5320X,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS5320X,135 Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

