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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5330PA,135

Name: PBSS5330PA,135
Brand: Nexperia USA Inc.
SKU: PBSS5330PA,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5330PA,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-PowerUDFN

Datasheet:: PBSS5330PA,135.pdf

Description:: TRANS PNP 30V 3A 3HUSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5330PA from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a DFN2020-3 (SOT1061) leadless package, rated for −30 V V_CEO, −3 A I_C, and 75 mΩ R_CEsat at −3 A/−300 mA drive, optimized for high-efficiency load switching in space-constrained battery-powered systems.

For engineers reviewing the PBSS5330PA datasheet, PBSS5330PA pinout, PBSS5330PA application, or PBSS5330PA equivalent, this device supports precise low-loss power control in portable electronics, motor drivers, and USB-C PD power paths where thermal performance and PCB area reduction are critical selection criteria.

Technical Context

This PNP BISS transistor uses a silicon planar epitaxial process to achieve ultra-low saturation resistance and fast switching (t_on = 70 ns, t_off = 200 ns) under pulsed conditions with δ ≤ 0.02. Its exposed collector pad enables direct thermal coupling to PCB copper, supporting up to 2.1 W dissipation on ceramic substrates.

The device operates across −55 °C to 150 °C ambient, with h_FE = 100–160 at −3 A/−2 V, and maintains stable V_CEsat down to −55 °C. It is not automotive-qualified and requires external base drive circuitry for full saturation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum safe collector-emitter voltage with base open; defines maximum blocking capability in high-side switch configurations.
I_C	−3 A - Continuous DC collector current rating; supports sustained load currents in battery management and fan control circuits.
R_CEsat	75 mΩ (typ) - Low saturation resistance at −3 A/−300 mA drive; reduces conduction loss to <100 mW in 3.3 V systems.
t_off	200 ns - Total turn-off time under −9 V V_CC, −2 A I_C, ±0.1 A base drive; enables PWM operation up to ~500 kHz.
P_tot (ceramic PCB)	2.1 W - Maximum power dissipation on Al₂O₃ substrate; allows higher current density than FR4 without heatsink.
T_j max	150 °C - Absolute maximum junction temperature; sets thermal design margin for continuous operation in sealed enclosures.

Pinout & Package

DFN2020-3 (SOT1061) is an ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with an exposed collector pad on the bottom side for enhanced thermal and electrical conduction. The top surface is transparent for optical marking (AJ), and the package is compatible with standard reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −300 mA drive for full saturation at −3 A; must be actively pulled low to turn on.
2	Emitter (E)	Common reference node tied to system ground or positive rail in high-side configuration; carries full load current.
3	Collector (C)	Main power output terminal connected to load; electrically and thermally bonded to exposed bottom pad for low-inductance, low-resistance path.

Key Features

Feature	Design Value
Low V_CEsat	−230 mV (typ) at −3 A/−300 mA ensures <0.7 W conduction loss in 5 V systems, reducing thermal stress vs. conventional PNP transistors.
Exposed collector pad	Direct thermal interface to PCB copper enables 60 K/W R_th(j-a) on ceramic substrates-critical for compact power modules.
Ultra-thin SMD footprint	2.0 × 2.0 mm body saves >50% PCB area versus SO-8 or TO-220 packages, enabling dense integration in wearables and dongles.
High pulse current rating	I_CM = −5 A (1 ms pulse) supports inrush current handling in charging circuits and motor startup without derating.

Applications

Battery-Powered Load Switch

USB-C Power Delivery Switch

Use Scenario: Enabling/disabling power to peripheral modules (e.g., Bluetooth radios, sensors) in smartwatches to extend battery life.

IC Role / Device Role / Timing Role: PNP high-side switch controlled by MCU GPIO; turns on/off within 200 ns to minimize transition losses.

Use Value: 75 mΩ R_CEsat limits voltage drop to <230 mV at 3 A, preserving headroom for 3.3 V logic rails during active load states.

Use Scenario: Controlling 5–20 V power paths in USB-C PD sink adapters where bidirectional voltage regulation is required.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver switch; handles up to −3 A continuous current with minimal thermal rise.

Use Value: Exposed collector pad dissipates 1.5 W at 70 °C ambient on 6 cm² FR4 copper, eliminating need for discrete heatsinks in compact adapters.

Motor/Fan Power Control

Charging Circuit Isolation

Use Scenario: Driving small DC brush motors or cooling fans in portable medical devices requiring silent, efficient on/off control.

IC Role / Device Role / Timing Role: Low-loss PNP switch in linear or PWM mode; base driven by dedicated gate driver IC.

Use Value: 165 ns storage time (t_s) and 35 ns fall time (t_f) enable clean PWM edges up to 1 MHz, minimizing audible noise and EMI.

Use Scenario: Isolating battery charging circuitry from system power rails during fault conditions or battery replacement.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch; placed between charger IC and battery terminal.

Use Value: −30 V V_CEO withstands transient spikes during hot-plug events; −100 nA I_CES ensures negligible leakage when off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LKQ-7	−30 V V_CEO, −3.5 A I_C, 55 mΩ R_CEsat; uses trench MOSFET architecture instead of BJT; gate-driven, not base-driven.	Requires level-shifted gate drive; better for high-frequency PWM but less tolerant of base current mismatch.	Select for higher efficiency above 100 kHz; avoid if MCU lacks 5 V-tolerant GPIO or level-shifting capability.
PBSS5240PA	−40 V V_CEO, −2 A I_C, 120 mΩ R_CEsat; same SOT1061 package and BISS topology but lower current and higher saturation resistance.	Suitable for 12 V systems with <2 A loads; offers higher voltage margin but reduced conduction efficiency at 3 A.	Select when V_CEO margin >10 V is required and peak current stays below 2 A; trade-off is 60% higher conduction loss at full load.

Compared with DMТ3005LKQ-7 and PBSS5240PA, PBSS5330PA delivers optimal balance of low R_CEsat, proven BJT drive simplicity, and thermal performance in 3 A, 30 V load-switch applications-making it preferred for cost-sensitive, medium-frequency designs without gate-drive complexity.

Availability

PBSS5330PA is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PBSS5330PA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for consumer, industrial, and automotive markets.

PBSS5330PA belongs to Nexperia's BISS transistor product line, engineered specifically for high-current, low-loss switching in space-constrained portable electronics where thermal density and PCB real estate are primary constraints.

FAQ

What is the recommended base resistor value for driving PBSS5330PA at 3 A load current?

With −300 mA base current required for full saturation at −3 A, and typical V_BEsat = −0.97 V, a 10 Ω resistor is recommended when driven from a 3.3 V GPIO (I_B ≈ (3.3 − 0.97)/10 = 233 mA). For guaranteed saturation, use ≤8.2 Ω to deliver ≥270 mA while accounting for GPIO voltage drop and temperature drift.

Can PBSS5330PA be used in high-side switch configurations with 5 V microcontrollers?

Yes-PBSS5330PA functions as a high-side PNP switch when emitter connects to V_IN and collector to load. A 3.3 V or 5 V MCU GPIO can drive the base through a series resistor; however, ensure the MCU can sink ≥300 mA or use a driver stage, as direct GPIO drive may exceed safe limits for most microcontrollers.

How does the exposed collector pad affect PCB layout and thermal design?

The exposed collector pad must be connected to a minimum 1 cm² copper pour on the bottom layer using ≥4 thermal vias (0.3 mm diameter) to internal ground/power planes. This achieves R_th(j-a) ≈ 125 K/W on FR4; omitting vias or undersizing copper increases junction temperature by >40 °C at 2 A continuous current.

Is PBSS5330PA qualified for automotive applications?

No-PBSS5330PA is explicitly marked as non-automotive qualified in the Nexperia datasheet. It has not undergone AEC-Q101 stress testing, lacks automotive-grade traceability, and its qualification temperature range (−55 °C to 150 °C) does not meet full automotive ambient requirements. Use only in industrial, consumer, or medical applications.

PBSS5330PA,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-PowerUDFN

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 320mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 3A, 2V

Power - Max:: 500 mW

Frequency - Transition:: 165MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-HUSON (2x2)

PBSS5330PA,135 FAQ

1.How can I place an order for PBSS5330PA,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5330PA,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5330PA,135 reliable?

The price and inventory of PBSS5330PA,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5330PA,135 is usually 5 days.

3.What payment methods are accepted for PBSS5330PA,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5330PA,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5330PA,135?

PBSS5330PA,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5330PA,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5330PA,135?

For technical support, including PBSS5330PA,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5330PA,135 requirements.

6.How does Aetrix verify that PBSS5330PA,135 is sourced from the original manufacturer or authorized distributors?

All PBSS5330PA,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5330PA,135 meets industry standards.

7.What is the process for return or replacement of PBSS5330PA,135?

All PBSS5330PA,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5330PA,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5330PA,135 part is unused and in its original packaging.

Return procedure for PBSS5330PA,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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